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61. 发明授权

US09790616B2 Method of fabricating bulk group III nitride crystals in supercritical ammonia 有权
公开(公告)号：US09790616B2
公开(公告)日：2017-10-17
申请号：US14957549
申请日：2015-12-02
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto
IPC分类号： C30B7/10 , C30B29/40 , C30B25/16 , C30B29/68
CPC分类号： C30B7/105 , C01B21/0632 , C01P2002/76 , C01P2004/60 , C30B25/02 , C30B25/16 , C30B29/406 , C30B29/68 , H01L29/2003 , Y02P20/544
摘要： In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.

62. 发明申请

US20160376726A1 HIGH PRESSURE REACTOR AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA 有权
标题翻译：高压反应器及其在超临界氨基酸中生长III族氮化物晶体的方法
公开(公告)号：US20160376726A1
公开(公告)日：2016-12-29
申请号：US15194284
申请日：2016-06-27
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto
IPC分类号： C30B7/10 , C01B21/06 , H01L29/20 , C30B29/40
CPC分类号： C30B7/105 , C01B21/0632 , C30B29/406 , H01L29/2003 , Y02P20/544
摘要： Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactor's longitudinal axis and seed material positioned at the reactor's inner wall and along the reactor's longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactor's longitudinal axis and deposits on the seed material positioned by the reactor's inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed.
摘要翻译：提供了适用于使用横向尺寸大于2英寸的III族氮化物的超临界氨生长体晶体或形成各种过渡金属氮化物的高压法的高压反应器。反应器具有沿着反应器的纵向轴线的分布的营养物质和位于反应器的内壁和沿着反应器的纵向轴线的种子材料。营养物通过超临界氨从反应器的纵轴扩散并沉积在由反应器内壁定位的种子材料上。营养物质和种子材料均由相同的加热器加热。材料生长主要是由于通过超临界氨的物质扩散。这种配置和方法减少了由于温度差导致的超临界氨的对流运动，提供了形成III族氮化物或过渡金属氮化物的更静态的环境。

63. 发明申请

US20160293415A1 ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR AND ITS FABRICATION METHOD AND AN EPITAXIAL MULTI-LAYER WAFER FOR MAKING IT 有权
标题翻译：使用III类氮化物半导体的电子器件及其制造方法和外延多层波导制造
公开(公告)号：US20160293415A1
公开(公告)日：2016-10-06
申请号：US14460065
申请日：2014-08-14
申请人： SIXPOINT MATERIALS, INC. , Seoul Semiconductor Co., Ltd
发明人： TADAO HASHIMOTO
IPC分类号： H01L21/02 , H01L29/778 , H01L29/205 , H01L29/32 , H01L29/66 , H01L29/20
CPC分类号： H01L21/0254 , C23C16/303 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02584 , H01L21/0262 , H01L21/02623 , H01L21/02694 , H01L29/0646 , H01L29/0653 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/32 , H01L29/41766 , H01L29/66462 , H01L29/7784 , H01L29/7828 , H01L29/8122 , H01L29/8611 , H01L29/872
摘要： The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.
摘要翻译：本发明公开了一种使用通过氨热法制造的III族氮化物衬底的电子器件。通过利用具有位错密度小于105cm -2的氨基生长的基底的高电子浓度，结合Ga1-x-yAlxInyN（0≤x≤1,0≤y≤1）的高纯度有源层生长通过气相法，器件可以获得高电平的击穿电压以及低导通电阻。为了实现氨热生长的基底和高纯度活性层之间的良好匹配，任选地引入过渡层。有源层比由有源层中的器件结构产生的耗尽区厚。

64. 发明申请

US20160215410A1 SEED SELECTION AND GROWTH METHODS FOR REDUCED-CRACK GROUP III NITRIDE BULK CRYSTALS 有权
标题翻译：种子选择和生长方法减少裂纹第三组氮化物大块水晶
公开(公告)号：US20160215410A1
公开(公告)日：2016-07-28
申请号：US15004464
申请日：2016-01-22
申请人： SixPoint Materials, Inc. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto , Edward Letts , Daryl Key
IPC分类号： C30B7/10 , G01N23/207 , C30B29/40
CPC分类号： C30B7/105 , C30B29/406 , G01N23/207 , G01N2223/602
摘要： In one instance, the invention provides a method of growing bulk crystal of group III nitride using a seed crystal selected by (a) measuring x-ray rocking curves of a seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths. The invention also includes the method of selecting a seed crystal for growing bulk crystal of group III nitride.The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed selected by the method above.
摘要翻译：在一个实例中，本发明提供了使用通过（a）在多于一点测量晶种的x射线摇摆曲线选择的晶种来生长III族氮化物的块状晶体的方法，（b）测量的x射线摇摆曲线，（c）评估量化峰宽度的分布。本发明还包括选择用于生长III族氮化物的本体晶体的晶种的方法。使用至少一种通过上述方法选择的种子，III族氮化物的块状晶体可以在超临界氨或III族金属的熔体中生长。

65. 发明授权

US09305772B2 Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness 有权
标题翻译：具有特定位错密度，氧/电子浓度和有源层厚度的III族氮化物半导体的电子器件
公开(公告)号：US09305772B2
公开(公告)日：2016-04-05
申请号：US14460097
申请日：2014-08-14
申请人： SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
发明人： Tadao Hashimoto
IPC分类号： H01L29/20 , H01L21/02 , H01L29/207 , H01L29/78 , H01L29/812 , C23C16/30 , H01L29/861 , H01L29/872 , H01L29/201 , H01L29/417 , H01L29/06 , H01L29/205
CPC分类号： H01L21/0254 , C23C16/303 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02584 , H01L21/0262 , H01L21/02623 , H01L21/02694 , H01L29/0646 , H01L29/0653 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/32 , H01L29/41766 , H01L29/66462 , H01L29/7784 , H01L29/7828 , H01L29/8122 , H01L29/8611 , H01L29/872
摘要： The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.
摘要翻译：本发明公开了一种使用通过氨热法制造的III族氮化物衬底的电子器件。通过利用具有位错密度小于105cm -2的氨基生长衬底的高电子浓度，与Ga1-x-yAlxInyN（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）的高纯度有源层结合生长通过气相法，器件可以获得高电平的击穿电压以及低导通电阻。为了实现氨热生长的基底和高纯度活性层之间的良好匹配，任选地引入过渡层。有源层比由有源层中的器件结构产生的耗尽区厚。

66. 发明申请

US20160076168A1 SUBSTRATES FOR GROWING GROUP III NITRIDE CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
公开(公告)号：US20160076168A1
公开(公告)日：2016-03-17
申请号：US14849566
申请日：2015-09-09
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B25/18 , C30B29/40 , C30B29/20
CPC分类号： C30B25/18 , C30B29/406 , C30B33/06 , H01L21/02005 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658
摘要： In one instance, the invention provides a substrate for growing a thick layer of group III nitride. The substrate has a first surface prepared for epitaxial growth of group III nitride and a second surface, opposite to the first surface, having a plurality of grooves. The invention also provides a method of producing a thick layer or a bulk crystal of group III nitride using a grooved substrate. The grooved substrate in one configuration grows a thick layer or a bulk crystal of group III nitride with reduced bow and/or spontaneous separation from the substrate.

67. 发明申请

US20160010238A1 METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH PRESSURE VESSEL 审中-公开
标题翻译：使用高压容器生长III类氮化物晶体的方法
公开(公告)号：US20160010238A1
公开(公告)日：2016-01-14
申请号：US14864839
申请日：2015-09-24
申请人： SIXPOINT MATERIALS, INC.
发明人： Tadao Hashimoto , Edward Letts , Masanori Ikari
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , B32B15/01 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T428/12028
摘要： Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.
摘要翻译：本发明公开了一种大尺寸的大型高压容器。 Ni-Cr基沉淀硬化型超合金。船舶可能有多个区域。例如，高压容器可以分为具有流量限制装置的至少三个区域，并且结晶区域设定为比其他区域更高的温度。该结构有助于可靠地密封高压容器的两端，同时有助于大大减少容器底部的III族氮化物的不利沉淀。本发明还公开了提高纯度，透明度和结构质量的晶体的新方法。含碱金属的矿化剂以最低的氧气和湿度暴露于高压容器中充满氨。介绍了几种在工艺步骤中减少氧气污染的方法。公开了晶种的后蚀刻和新的温度梯度方案以改善结构质量。

68. 发明申请

US20160002817A1 HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL 审中-公开
标题翻译：用于生长III族氮化物晶体的高压容器和使用高压容器和III类硝酸盐晶体生长III族氮化物晶体的方法
公开(公告)号：US20160002817A1
公开(公告)日：2016-01-07
申请号：US14850948
申请日：2015-09-10
申请人： SIXPOINT MATERIALS, INC.
发明人： Tadao Hashimoto , Edward Letts , Masanori Ikari
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , B32B15/01 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T428/12028
摘要： Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.
摘要翻译：本发明公开了一种大尺寸的大型高压容器。 Ni-Cr基沉淀硬化型超合金。船舶可能有多个区域。例如，高压容器可以分为具有流量限制装置的至少三个区域，并且结晶区域设定为比其他区域更高的温度。该结构有助于可靠地密封高压容器的两端，同时有助于大大减少容器底部的III族氮化物的不利沉淀。本发明还公开了提高纯度，透明度和结构质量的晶体的新方法。含碱金属的矿化剂以最低的氧气和湿度暴露于高压容器中充满氨。介绍了在工艺步骤中减少氧气污染的几种方法。公开了晶种的后蚀刻和新的温度梯度方案以改善结构质量。

69. 发明申请

US20140326175A1 REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS 审中-公开
标题翻译：用于生长III族氮化物晶体的反应器设计及其生长III族氮化物晶体的方法
公开(公告)号：US20140326175A1
公开(公告)日：2014-11-06
申请号：US14330419
申请日：2014-07-14
申请人： SIXPOINT MATERIALS, INC.
发明人： Tadao HASHIMOTO , Masonari IKARI , Edward LETTS
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T117/1096
摘要： The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enable obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device.
摘要翻译：本公开内容证明了用于III族氮化物晶体的氨热生长的反应器的新设计。反应器包括源溶解区域和晶体生长区域之间的区域，晶体生长区域被配置为以大于100μm/天的速率提供高质量晶体的生长。在一个实施例中，具有开口的多个挡板具有位置被设计成使得不存在通过中间区域的直接路径，或者在每个板上具有不同尺寸的开口的多个挡板，使得流动减慢和/或显示更大的混合被描述。所公开的设计使得能够在不降低通过该装置的电导的情况下获得溶解区域和结晶区域之间的高温差。

70. 发明申请

US20140087209A1 METHOD OF GROWING GROUP III NITRIDE CRYSTALS 有权
公开(公告)号：US20140087209A1
公开(公告)日：2014-03-27
申请号：US13833443
申请日：2013-03-15
申请人： Seoul Semiconductor Co., Ltd. , SixPoint Materials, Inc.
发明人： Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号： H01L21/02 , C30B7/10 , B28D5/04 , C30B29/40
CPC分类号： C30B29/406 , B28D5/045 , C30B7/10 , C30B7/105 , C30B25/20 , C30B29/403 , C30B29/64 , H01L21/02389 , H01L21/0254 , H01L21/02628 , H01L29/045 , H01L29/2003 , H01L29/32 , Y10S117/902 , Y10T428/192
摘要： The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

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