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1. 发明授权

US10156530B2 Group III nitride wafers and fabrication method and testing method 有权
公开(公告)号：US10156530B2
公开(公告)日：2018-12-18
申请号：US14806644
申请日：2015-07-22
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto
IPC分类号： G01N23/207 , C01B21/06 , H01L21/306 , H01L21/02 , H01L29/04 , C30B29/40 , C30B33/00 , C30B33/06 , B24B37/04 , H01L21/66 , H01L29/20 , H01L21/78 , C30B7/10
摘要： The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray incident beam is irradiated at an angle less than 15 degree and diffraction peak intensity is evaluated. The group III nitride wafer passing this test has sufficient surface quality for device fabrication. The invention also provides, in one instance, a method of producing group III nitride wafer by slicing a group III nitride ingot, polishing at least one surface of the wafer, and testing the surface quality with x-ray diffraction having an incident beam angle less than 15 degree to the surface. The invention also provides, in an instance, a test method for testing the surface quality of group III nitride wafers using x-ray diffraction having an incident beam angle less than 15 degree to the surface.

2. 发明授权

US09673044B2 Group III nitride substrates and their fabrication method 有权
公开(公告)号：US09673044B2
公开(公告)日：2017-06-06
申请号：US14959565
申请日：2015-12-04
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto
IPC分类号： H01L21/00 , H01L21/02 , H01L21/78 , H01L21/324 , H01L21/304 , H01L29/04 , H01L29/20
CPC分类号： H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02634 , H01L21/304 , H01L21/3245 , H01L21/78 , H01L29/045 , H01L29/2003
摘要： Group III nitride substrate having a first side of nonpolar or semipolar plane and a second side has more than one stripe of metal buried, wherein the stripes are perpendicular to group III nitride's c-axis. More than 90% of stacking faults exist over metal stripes. Second side may expose a nonpolar or semipolar plane. Also disclosed is a group III nitride substrate having a first side of nonpolar or semipolar plane and a second side with exposed nonpolar or semipolar plane. The substrate contains bundles of stacking faults with spacing larger than 1 mm. The invention also provides methods of fabricating the group III nitride substrates above.

3. 发明授权

US09543393B2 Group III nitride wafer and its production method 有权
标题翻译： III族氮化物晶圆及其制作方法
公开(公告)号：US09543393B2
公开(公告)日：2017-01-10
申请号：US13834871
申请日：2013-03-15
申请人： SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
发明人： Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号： H01L29/201 , H01L29/20 , C30B7/10 , C30B29/40 , C30B33/10 , H01L21/02 , C30B33/00
CPC分类号： H01L29/201 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , H01L21/02013 , H01L21/02019 , H01L29/2003
摘要： The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.
摘要翻译：本发明公开了一种III族氮化物晶片，例如GaN，AlN，InN及其合金，其一面在视觉上与其他表面不同。在用诸如多线锯的机械方法从III族氮化物的块状晶体切片晶片之后，晶片被化学蚀刻，使得晶片的一个表面在视觉上与另一表面区分开。本发明还公开了一种制造这种晶片的方法。

4. 发明授权

US09435051B2 Bismuth-doped semi-insulating group III nitride wafer and its production method 有权
标题翻译：铋掺杂半绝缘III族氮化物晶片及其制备方法
公开(公告)号：US09435051B2
公开(公告)日：2016-09-06
申请号：US14981292
申请日：2015-12-28
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号： C30B7/10 , B24B37/04 , B28D5/00 , C30B29/40 , H01L21/02 , H01L29/20 , H01L29/207 , H01L29/22 , C30B9/00 , C30B28/04
CPC分类号： C30B7/105 , B24B37/042 , B28D5/00 , C30B9/00 , C30B28/04 , C30B29/403 , H01L21/02013 , H01L21/02389 , H01L29/2003 , H01L29/207 , H01L29/22
摘要： The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
摘要翻译：本发明公开了掺杂有铋（Bi）的GaxAlyIn1-x-yN（0≤x≤1,0≤x+y≤1）的半绝缘晶片。半绝缘晶片的电阻率为104ohm-cm以上。尽管获得III族氮化物的单晶锭是非常困难的，但是该方法可以生长具有位错密度/晶界小于105cm -2的III族氮化物的高取向聚晶或单晶锭。本发明还公开了制造半绝缘III族氮化物块状晶体和晶片的方法。

5. 发明授权

US09349592B2 Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thickness 有权
标题翻译：使用具有指定位错密度氧/电子浓度的III族氮化物半导体制造电子器件的方法和有源层厚度
公开(公告)号：US09349592B2
公开(公告)日：2016-05-24
申请号：US14460121
申请日：2014-08-14
申请人： SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
发明人： Tadao Hashimoto
IPC分类号： H01L21/02 , H01L29/207 , H01L29/78 , H01L29/812 , C23C16/30 , H01L29/861 , H01L29/872 , H01L29/20 , H01L29/201 , H01L29/417 , H01L29/06 , H01L29/205
CPC分类号： H01L21/0254 , C23C16/303 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02584 , H01L21/0262 , H01L21/02623 , H01L21/02694 , H01L29/0646 , H01L29/0653 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/32 , H01L29/41766 , H01L29/66462 , H01L29/7784 , H01L29/7828 , H01L29/8122 , H01L29/8611 , H01L29/872
摘要： The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.
摘要翻译：本发明公开了一种使用通过氨热法制造的III族氮化物衬底的电子器件。通过利用具有位错密度小于105cm -2的氨基生长衬底的高电子浓度，与Ga1-x-yAlxInyN（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）的高纯度有源层结合生长通过气相法，器件可以获得高电平的击穿电压以及低导通电阻。为了实现氨热生长的基底和高纯度活性层之间的良好匹配，任选地引入过渡层。有源层比由有源层中的器件结构产生的耗尽区厚。

6. 发明申请

US20160076169A1 SUBSTRATES FOR GROWING GROUP III NITRIDE CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
标题翻译：用于生长III类氮化物晶体的基板及其制造方法
公开(公告)号：US20160076169A1
公开(公告)日：2016-03-17
申请号：US14849553
申请日：2015-09-09
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B29/20
CPC分类号： C30B25/18 , C30B29/406 , C30B33/06 , H01L21/02005 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658
摘要： In one instance, the invention provides a substrate for growing a thick layer of group III nitride. The substrate has a first surface prepared for epitaxial growth of group III nitride and a second surface, opposite to the first surface, having a plurality of grooves. The invention also provides a method of producing a thick layer or a bulk crystal of group III nitride using a grooved substrate. The grooved substrate in one configuration grows a thick layer or a bulk crystal of group III nitride with reduced bow and/or spontaneous separation from the substrate.
摘要翻译：在一个实例中，本发明提供了用于生长III族氮化物的厚层的衬底。衬底具有准备用于III族氮化物的外延生长的第一表面和与第一表面相对的第二表面，其具有多个凹槽。本发明还提供了一种使用沟槽衬底生产III族氮化物的厚层或块状晶体的方法。在一种构型中的带沟槽衬底通过减少弓形和/或从衬底自发分离而生长III族氮化物的厚层或块状晶体。

7. 发明申请

US20150337457A1 GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
标题翻译：第III组氮化物大块晶体及其制造方法
公开(公告)号：US20150337457A1
公开(公告)日：2015-11-26
申请号：US14720816
申请日：2015-05-24
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO , Edward LETTS
IPC分类号： C30B23/02 , C30B29/64 , C30B29/40 , C30B29/66 , C30B23/06 , C30B25/20
CPC分类号： C30B23/025 , C30B7/105 , C30B9/10 , C30B23/066 , C30B25/20 , C30B29/403 , C30B29/64 , C30B29/66 , H01L29/2003 , H01L29/32
摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.
摘要翻译：在一个实例中，本发明提供了具有超过1mm厚度的III族氮化物的块状晶体，而不会在晶种的侧面上开裂。这种本体III族氮化物晶体表示为Gax1Aly1In1-x1-y1N（0＆nlE; x1＆nlE; 1,0＆nlE; x1 + y1＆nlE; 1），晶种表示为Gax2Aly2In1-x2-y2N（0＆nlE; x2＆nlE; 1,0＆ x2 + y2＆nlE; 1）。 III族氮化物的块状晶体可以使用具有c取向的基面和m取向的侧壁的至少一种晶种在超临界氨或III族金属的熔体中生长。在这种情况下仅暴露c面和m面，避免了从晶种的侧面产生的裂纹。

8. 发明申请

US20150330919A1 GROUP III NITRIDE WAFERS AND FABRICATION METHOD AND TESTING METHOD 审中-公开
公开(公告)号：US20150330919A1
公开(公告)日：2015-11-19
申请号：US14806644
申请日：2015-07-22
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： G01N23/207 , H01L21/66 , H01L29/04 , C01B21/06 , H01L29/20
CPC分类号： G01N23/207 , B24B37/044 , C01B21/0632 , C01P2002/74 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/06 , H01L21/0201 , H01L21/30625 , H01L21/78 , H01L22/12 , H01L29/045 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray incident beam is irradiated at an angle less than 15 degree and diffraction peak intensity is evaluated. The group III nitride wafer passing this test has sufficient surface quality for device fabrication. The invention also provides, in one instance, a method of producing group III nitride wafer by slicing a group III nitride ingot, polishing at least one surface of the wafer, and testing the surface quality with x-ray diffraction having an incident beam angle less than 15 degree to the surface. The invention also provides, in an instance, a test method for testing the surface quality of group III nitride wafers using x-ray diffraction having an incident beam angle less than 15 degree to the surface.

9. 发明申请

US20150203991A1 GROUP III NITRIDE BULK CRYSTALS AND FABRICATION METHOD 有权
标题翻译：第III组氮化物大块晶体和制造方法
公开(公告)号：US20150203991A1
公开(公告)日：2015-07-23
申请号：US14598982
申请日：2015-01-16
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto , Edward Letts
IPC分类号： C30B29/40 , C30B7/10
CPC分类号： C30B29/403 , C30B7/105
摘要： Bulk crystal of group III nitride having thickness greater than 1 mm with improved crystal quality, reduced lattice bowing and/or reduced crack density and methods of making. Bulk crystal has a seed crystal, a first crystalline portion grown on the first side of the seed crystal and a second crystalline portion grown on the second side of the seed crystal. Either or both crystalline portions have an electron concentration and/or an oxygen concentration similar to the seed crystal.The bulk crystal can have an additional seed crystal, with common faces (e.g. same polarity, same crystal plane) of seed crystals joined so that a first crystalline part grows on the first face of the first seed crystal and a second crystalline part grows on the first face of the second seed crystal. Each crystalline part's electron concentration and/or oxygen concentration may be similar to its corresponding seed crystal.
摘要翻译：具有大于1mm厚度的III族氮化物的体晶，具有改善的晶体质量，减少晶格弯曲和/或降低的裂纹密度和制备方法。散装晶体具有晶种，在晶种的第一侧生长的第一晶体部分和在籽晶的第二面上生长的第二晶体部分。结晶部分之一或两者具有类似于晶种的电子浓度和/或氧浓度。本体晶体可以具有另外的晶种，其中接合晶种的共同面（例如相同的极性，相同的晶面），使得第一晶体部分在第一晶种的第一面上生长，并且第二晶体部分在第二个晶种的第一面。每个结晶部分的电子浓度和/或氧浓度可以与其相应的晶种相似。

10. 发明申请

US20140054595A1 COMPOSITE SUBSTRATE OF GALLIUM NITRIDE AND METAL OXIDE 有权
标题翻译：氮化钛和金属氧化物的复合基材
公开(公告)号：US20140054595A1
公开(公告)日：2014-02-27
申请号：US13781509
申请日：2013-02-28
申请人： Seoul Semiconductor Co., Ltd. , SIXPOINT MATERIALS, INC.
发明人： Tadao HASHIMOTO
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02389 , H01L21/02488 , H01L21/0254 , H01L21/02658 , H01L21/31111 , H01L22/12 , H01L29/32
摘要： The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia.
摘要翻译：本发明公开了一种解决与衬底表面质量相关的问题的新型复合衬底。复合衬底具有至少两层，包括由GaxAlyIn1-x-yN（0 @ x @ 1，x @ y + 1）组成的第一层和由金属氧化物组成的第二层，其中第二层可以用在高温下进行原位蚀刻。金属氧化物层被设计成用作第一层的保护层，直到器件的制造。金属氧化物层被设计成使得其可以通过气相蚀刻通过诸如氨的反应性气体在装置的制造反应器中除去。

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