专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20190194819A1 METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT 审中-公开
公开(公告)号：US20190194819A1
公开(公告)日：2019-06-27
申请号：US16221671
申请日：2018-12-17
申请人： SHOWA DENKO K.K.
发明人： Yohei Fujikawa
IPC分类号： C30B23/00 , C30B29/36 , C30B35/00
CPC分类号： C30B23/002 , C30B29/36 , C30B35/002
摘要： The present invention provides a method including: a temperature raising step of raising a temperature in a crystal growing furnace with a silicon carbide raw material and a silicon carbide seed crystal arranged therein to a crystal growing temperature; a single crystal growing step of maintaining the crystal growing temperature and causing a silicon carbide single crystal to grow on the silicon carbide seed crystal; and a temperature lowering step of lowering the temperature in the crystal growing furnace from the crystal growing temperature to stop growth of the silicon carbide single crystal, in which the method further comprises, between the single crystal growing step and the temperature lowering step, a temperature lowering preparation step of maintaining the temperature in the crystal growing furnace at the crystal growing temperature and causing concentration of nitrogen gas in the crystal growing furnace to increase to be higher than concentration of nitrogen gas in the temperature raising step and in the single crystal growing step, and in which the concentration of the nitrogens gas in the crystal growing furnace in the temperature lowering step is higher than the concentration of the nitrogen gas in the temperature raising step and the single crystal growing step.

2. 发明申请

US20170292901A1 DESTRUCTIVE INSPECTION METHOD AND QUALITY DETERMINATION METHOD FOR VITREOUS SILICA CRUCIBLE 有权
公开(公告)号：US20170292901A1
公开(公告)日：2017-10-12
申请号：US15512535
申请日：2015-09-24
申请人： SUMCO CORPORATION
发明人： Ken KITAHARA , Tadahiro SATO , Toshiaki SUDO , Eriko KITAHARA , Takashi WATANABE
IPC分类号： G01N3/307
CPC分类号： G01N3/307 , C03B19/095 , C30B15/10 , C30B29/06 , C30B35/002 , G01N2203/001 , G01N2203/0035 , G01N2203/0064
摘要： A destructive inspection method of a vitreous silica crucible for pulling a silicon single crystal evaluates a crack state of an inner surface of the vitreous silica crucible supported by a graphite susceptor when a load is instantaneously applied to at least one point on the inner surface via an automatic center punch while pushing the tip portion of the automatic center punch against the inner surface. The destructive inspection method can inspect the vitreous silica crucible under conditions as close to the actual conditions of use as possible.

3. 发明授权

US09708730B1 Quality-evaluated vitreous silica crucible 有权
公开(公告)号：US09708730B1
公开(公告)日：2017-07-18
申请号：US15488342
申请日：2017-04-14
申请人： SUMCO CORPORATION
发明人： Toshiaki Sudo , Tadahiro Sato , Ken Kitahara , Masami Ohara
IPC分类号： G01N21/00 , C30B15/10 , C30B29/06 , C30B15/14 , C30B15/00 , C30B35/00 , G01N21/65
CPC分类号： H01J37/32935 , C30B15/00 , C30B15/10 , C30B15/14 , C30B29/06 , C30B35/002 , G01N21/3563 , G01N21/65 , G01N21/68 , G01N21/95 , G01N2021/8477 , G01N2201/105 , G01N2201/12
摘要： A quality-evaluated vitreous silica crucible for pulling silicon single crystal is provided, wherein an inner surface of the vitreous silica crucible has regions where surface defects including brown rings are to be generated when pulling silicon single crystal. The regions are distinguished using an infrared absorption spectrum or a Raman shift of the regions, wherein a position of each region and/or a density of the regions are/is specified.

4. 发明授权

US09702055B2 Method for manufacturing single-crystal silicon 有权
公开(公告)号：US09702055B2
公开(公告)日：2017-07-11
申请号：US14362368
申请日：2012-07-10
申请人： Hideo Kato , Shinichi Kyufu
发明人： Hideo Kato , Shinichi Kyufu
IPC分类号： C30B15/10 , C30B15/02 , C30B15/22 , C30B29/06 , C30B35/00
CPC分类号： C30B15/02 , C30B15/10 , C30B15/22 , C30B29/06 , C30B35/002
摘要： The success rate of multi-pulled single crystal growth by the Czochralski method is enhanced by the use of a melt crucible having an amount of barium on an inner surface thereof which varies inversely with the diameter of the crucible. At least one single crystal is separated from the melt by a free span method.

5. 发明授权

US09611566B2 Method for manufacturing single-crystal silicon 有权
公开(公告)号：US09611566B2
公开(公告)日：2017-04-04
申请号：US14362360
申请日：2012-05-15
申请人： Hideo Kato , Shinichi Kyufu , Masamichi Ohkubo
发明人： Hideo Kato , Shinichi Kyufu , Masamichi Ohkubo
IPC分类号： C30B15/02 , C30B15/00 , C30B15/10 , C30B29/06 , C30B35/00 , C30B30/04
CPC分类号： C30B15/005 , C30B15/02 , C30B15/10 , C30B29/06 , C30B30/04 , C30B35/002
摘要： Single crystal silicon ingots are grown by the multi-pulling method in a single crucible with minimization of dislocations by incorporating barium as a quartz crystallization inhibitor in amounts proportional to the diameter of the Czochralski crucible in which the crystal is grown. In at least one of the crystal pulling steps, a magnetic field is applied.

6. 发明申请

US20170088973A1 INSPECTION METHOD OF VITREOUS SILICA CRUCIBLE 有权
公开(公告)号：US20170088973A1
公开(公告)日：2017-03-30
申请号：US15377963
申请日：2016-12-13
申请人： SUMCO CORPORATION
发明人： Toshiaki SUDO , Tadahiro SATO , Ken KITAHARA , Masami OHARA
IPC分类号： C30B15/10 , C03B19/09 , G01N21/3563 , C30B29/06 , G01N21/95 , G01N21/65
CPC分类号： H01J37/32935 , C30B15/00 , C30B15/10 , C30B15/14 , C30B29/06 , C30B35/002 , G01N21/3563 , G01N21/65 , G01N21/68 , G01N21/95 , G01N2021/8477 , G01N2201/105 , G01N2201/12
摘要： A method of manufacturing a vitreous silica crucible includes an inspection method comprising: a measurement step of measuring an infrared absorption spectrum or a Raman shift of a measurement point on an inner surface of the vitreous silica crucible; a determining step of predicting whether a surface defect region is generated or not in the measurement point based on an obtained spectrum to determine a quality of the vitreous silica crucible.

7. 发明申请

US20170081779A1 PRESSURE RELEASE MECHANISM FOR CAPSULE AND METHOD OF USE WITH SUPERCRITICAL FLUIDS 审中-公开
公开(公告)号：US20170081779A1
公开(公告)日：2017-03-23
申请号：US15269538
申请日：2016-09-19
申请人： SORAA, INC.
发明人： MARK PHILIP D'EVELYN , RAJEEV TIRUMALA PAKALAPATI
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： B01J3/008 , B01J3/042 , B08B7/0021 , C30B7/10 , C30B35/002 , Y02P20/544
摘要： A pressure release mechanism for use with a capsule for processing materials or growing crystals in supercritical fluids is disclosed. The capsule with the pressure release mechanism is scalable up to very large volumes and is cost effective according to a preferred embodiment. In conjunction with suitable high pressure apparatus, the capsule with pressure release mechanism is capable of processing materials at pressures and temperatures of 20-2000 MPa and 25-1500° C., respectively. Of course, there can be other variations, modifications, and alternatives.

8. 发明申请

US20160368058A1 METALLIC CRUCIBLES AND METHODS OF FORMING THE SAME 审中-公开
公开(公告)号：US20160368058A1
公开(公告)日：2016-12-22
申请号：US15254576
申请日：2016-09-01
申请人： Maria Bozena WINNICKA , Gary A. ROZAK
发明人： Maria Bozena WINNICKA , Gary A. ROZAK
IPC分类号： B22F7/06 , B22F3/24 , B22F3/00 , C30B29/20 , B22F3/04 , B22F3/10 , C30B35/00 , B22F3/16 , B22F7/00
CPC分类号： C30B35/002 , B22F3/001 , B22F3/04 , B22F3/1007 , B22F3/1017 , B22F3/16 , B22F3/24 , B22F5/00 , B22F5/10 , B22F7/008 , B22F7/06 , B22F2003/248 , B22F2201/013 , B22F2301/20 , B22F2302/45 , B22F2998/10 , B22F2999/00 , C30B11/002 , C30B15/10 , C30B29/20 , Y10T117/1024 , B22F2201/016 , B22F2203/11 , B22F2207/01
摘要： In various embodiments, a precursor powder is pressed into an intermediate volume and chemically reduced, via sintering, to form a metallic shaped article.

9. 发明申请

US20160271692A1 DIRECTIONAL SOLIDIFICATION SYSTEM AND METHOD 审中-公开
公开(公告)号：US20160271692A1
公开(公告)日：2016-09-22
申请号：US15166039
申请日：2016-05-26
申请人： Silicor Materials Inc.
发明人： Abdallah Nouri , Kamel Ounadjela
IPC分类号： B22D27/04 , C01B33/02
CPC分类号： B22D27/045 , C01B33/02 , C01B33/037 , C30B11/002 , C30B11/003 , C30B23/00 , C30B23/025 , C30B29/06 , C30B29/36 , C30B35/002
摘要： The present invention relates to an apparatus and method for purifying materials using a rapid directional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during directional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells.

10. 发明申请

US20160115625A1 METHOD OF MANUFACTURING COMPOSITE CRUCIBLE 有权
标题翻译：制造复合材料的方法
公开(公告)号：US20160115625A1
公开(公告)日：2016-04-28
申请号：US14979431
申请日：2015-12-27
申请人： SUMCO CORPORATION
发明人： Toshiaki SUDO , Ken KITAHARA , Takuma YOSHIOKA
IPC分类号： C30B35/00 , C03B19/09
CPC分类号： C03B19/095 , C30B15/10 , C30B29/06 , C30B35/002 , Y02P40/57 , Y10T117/10
摘要： A method of manufacturing a composite crucible includes: supplying mullite material powder to an upper region of a mold, and supplying second silica powder to a lower region provided below the upper region while rotating the mold; supplying third silica powder on an inner surface side of a layer made of the mullite material powder and the second silica powder; heating and fusing the mullite material powder, the second silica powder, and the third silica powder to form an opaque vitreous silica layer provided on the outer surface of the crucible, a transparent vitreous silica layer provided on an inner surface side of the crucible, and a mullite reinforcement layer provided on the outer surface side of an upper end portion of the crucible.
摘要翻译：制造复合坩埚的方法包括：将莫来石材料粉末供给到模具的上部区域，并且在旋转模具的同时将第二二氧化硅粉末供给到设置在上部区域下方的下部区域; 在由莫来石材料粉末和第二二氧化硅粉末制成的层的内表面侧上供给第二二氧化硅粉末; 加热熔融莫来石材料粉末，第二二氧化硅粉末和第三二氧化硅粉末，以形成设置在坩埚外表面上的不透明玻璃状二氧化硅层，设置在坩埚内表面侧的透明氧化硅玻璃层，以及在所述坩埚的上端部的外表面侧设置的莫来石加强层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式