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61. 发明授权

US06415500B1 Method to prevent electrostatic discharge for MR/GMR wafer fabrication 有权
标题翻译：防止MR / GMR晶片制造的静电放电的方法
公开(公告)号：US06415500B1
公开(公告)日：2002-07-09
申请号：US09482050
申请日：2000-01-13
申请人： Cherng-Chyi Han , Mao-Min Chen , Jen-Wei Koo , Rodney Lee , Li-Yan Zhu , Jei-Wei Chang
发明人： Cherng-Chyi Han , Mao-Min Chen , Jen-Wei Koo , Rodney Lee , Li-Yan Zhu , Jei-Wei Chang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3173 , G11B5/3903 , G11B5/40 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49156 , Y10T29/49165
摘要： Methods and structures are disclosed which avoid electrostatic charge build up and subsequent electrostatic discharge (ESD) during the wafer fabrication process of magnetoresistive (MR) or giant magnetoresistive (GMR) read/write heads of magnetic disk drives. This is achieved by designing the wafer layout and process so that the MR/GMR sensor film is shorted to the magnetic shields of the head through shorting paths so that there is an equal potential between MR/GMR sensor film and magnetic shields during the entire fabrication process.
摘要翻译：公开了在磁阻（MR）或巨磁阻（GMR）读/磁头磁盘驱动器的晶片制造过程中避免静电电荷累积和随后的静电放电（ESD）的方法和结构。这通过设计晶片布局和工艺来实现，使得MR / GMR传感器膜通过短路路径短路到磁头的磁屏蔽，使得在整个制造期间MR / GMR传感器膜和磁屏蔽之间具有相等的电位处理。

62. 发明授权

US06383574B1 Ion implantation method for fabricating magnetoresistive (MR) sensor element 失效
标题翻译：用于制造磁阻（MR）传感器元件的离子注入方法
公开(公告)号：US06383574B1
公开(公告)日：2002-05-07
申请号：US09360118
申请日：1999-07-23
申请人： Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
发明人： Cherng-Chyi Han , Rong-Fu Xiao , Mao-Min Chen , Po-Kang Wang
IPC分类号： B05D500
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/48 , G11B5/3163 , H01F41/302
摘要： A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.
摘要翻译：形成磁阻（MR）层的方法首先采用形成由磁阻（MR）材料形成的磁阻（MR）层的衬底。然后选择性地离子注入，同时采用离子注入法，磁阻（MR）层形成：（1）由离子注入的磁阻（MR）材料形成的磁阻（MR）层的离子注入部分; 和（2）由磁阻（MR）材料形成的磁阻（MR）层的邻接非离子注入部分，其中离子注入磁阻（MR）材料是非磁阻（MR）材料。该方法可以用于在具有增强的尺寸均匀性的磁阻（MR）传感器元件磁阻（MR）层内形成，特别是增强的覆盖尺寸均匀性。

63. 发明授权

US06306311B1 Method to make a high data rate stitched writer for a giant magneto-resistive head 失效
标题翻译：为巨型磁阻头制作高数据速率缝合笔记的方法
公开(公告)号：US06306311B1
公开(公告)日：2001-10-23
申请号：US09431237
申请日：1999-11-01
申请人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
发明人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3146 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , Y10T29/49021 , Y10T29/49025 , Y10T29/49032
摘要： A high data-rate stitched pole magnetic read/write-head combining sputtered and plated high magnetic moment materials and a method for fabricating same. The plating and stitching aspects of this fabrication allow the formation of a very narrow write-head, while the sputtering permits the use of high magnetic moment materials having high resistivity and low coercivity.
摘要翻译：组合溅射和电镀高磁矩材料的高数据速率缝合磁极读/写头及其制造方法。该制造的电镀和缝合方面允许形成非常窄的写入头，而溅射允许使用具有高电阻率和低矫顽力的高磁矩材料。

64. 发明授权

US5684658A High track density dual stripe magnetoresistive (DSMR) head 失效
标题翻译：高轨道密度双条磁阻（DSMR）头
公开(公告)号：US5684658A
公开(公告)日：1997-11-04
申请号：US727264
申请日：1996-10-07
申请人： Xizeng Shi , Yimin Guo , Kochan Ju , Cherng-Chyi Han , Yimin Hsu , Jei-Wei Chang
发明人： Xizeng Shi , Yimin Guo , Kochan Ju , Cherng-Chyi Han , Yimin Hsu , Jei-Wei Chang
IPC分类号： G11B5/012 , G11B5/39 , G11B5/48
CPC分类号： G11B5/3954 , G11B5/012 , G11B5/3967 , G11B5/488
摘要： A method for forming a dual stripe magnetoresistive (DSMR) sensor element, and the dual stripe magnetoresistive (DSMR) sensor element formed through the method. To practice the method, there is formed upon a substrate a first magnetoresistive (MR) layer, where the first magnetoresistive (MR) layer has a first sensor region longitudinally magnetically biased in a first longitudinal bias direction through a patterned first longitudinal magnetic biasing layer. There is then formed a second magnetoresistive (MR) layer parallel with and separated from the first magnetoresistive (MR) layer by an insulator layer. The second magnetoresistive (MR) layer has a second sensor region longitudinally magnetically biased in a second longitudinal bias direction through a patterned second longitudinal magnetic biasing layer. The first longitudinal bias direction and the second longitudinal bias direction are substantially parallel. In addition, the first sensor region and the second sensor region are physically offset. Finally, the first magnetoresistive (MR) layer is electromagnetically biased with a first bias current in a first bias current direction and the second magnetoresistive (MR) layer is electromagnetically biased with a second bias current in a second bias current direction, where the first bias current direction and the second bias current direction are substantially parallel.
摘要翻译：一种用于形成双条磁阻（DSMR）传感器元件的方法和通过该方法形成的双条带磁阻（DSMR）传感器元件。为了实施该方法，在衬底上形成第一磁阻（MR）层，其中第一磁阻（MR）层具有通过图案化的第一纵向磁偏置层在第一纵向偏置方向上纵向磁偏置的第一传感器区。然后通过绝缘体层形成与第一磁阻（MR）层平行并与第一磁阻（MR）层分离的第二磁阻（MR）层。第二磁阻（MR）层具有通过图案化的第二纵向磁偏置层在第二纵向偏置方向上纵向磁偏置的第二传感器区。第一纵向偏置方向和第二纵向偏置方向基本平行。此外，第一传感器区域和第二传感器区域被物理偏移。最后，第一磁阻（MR）层在第一偏置电流方向上以第一偏置电流进行电磁偏置，第二磁阻（MR）层在第二偏置电流方向上以第二偏置电流进行电磁偏置，其中第一偏置电流方向和第二偏置电流方向基本上平行。

65. 发明授权

US08614860B2 PMR head with integrated side shield (ISS) 有权
标题翻译：带集成侧护罩（ISS）的PMR头
公开(公告)号：US08614860B2
公开(公告)日：2013-12-24
申请号：US13373172
申请日：2011-11-07
申请人： Cherng-Chyi Han , Lijie Guan , Joe Smyth , Moris Dovek
发明人： Cherng-Chyi Han , Lijie Guan , Joe Smyth , Moris Dovek
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , G11B5/3163
摘要： A PMR head comprises a substrate, a magnetic pole formed over the substrate, the pole having a pole tip having a cross-sectional tapered shape wherein the pole tip is surrounded by a write gap layer, an integrated shield comprising side shields on the substrate laterally surrounding the pole tip and a trailing shield overlying the pole tip and integral with the side shields.
摘要翻译： PMR头包括衬底，形成在衬底上的磁极，所述极具有具有横截面锥形形状的极尖，其中极尖由写间隙层围绕;集成屏蔽，包括在衬底上的侧屏蔽围绕极尖和覆盖极尖并且与侧护罩成一体的后挡板。

66. 发明申请

US20120281313A1 Perpendicular Shield Pole Writer with Tapered Main Pole and Tapered Non-Magnetic Top Shaping Layer 有权
标题翻译：垂直屏蔽杆编写器，带锥形主极和锥形非磁性顶部成型层
公开(公告)号：US20120281313A1
公开(公告)日：2012-11-08
申请号：US13554275
申请日：2012-07-20
申请人： Liejie Guan , Joe Smyth , Moris Dovek , Yoshitaka Sasaki , Cherng-Chyi Han
发明人： Liejie Guan , Joe Smyth , Moris Dovek , Yoshitaka Sasaki , Cherng-Chyi Han
IPC分类号： G11B5/187
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/23 , G11B5/3163
摘要： A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.
摘要翻译：公开了一种具有锥形主极层和锥形非磁性顶部成形层的PMR写入器，其使拖尾屏蔽饱和度最小化。可以采用第二非磁性顶部成形层来减小有效的TH尺寸，同时尾部屏蔽的大部分较厚以允许用于后端处理的较大的工艺窗口。在ABS处具有一端的倾斜表面和距离ABS的0.05至0.3微米的第二端与ABS形成10至80度的角度，并且包括在主极层的上部上的非倾斜表面，磁顶成型层。在倾斜表面的第二端处在第二非磁性顶部成形层上形成端部，随后形成共形写入间隙层，然后将后部屏蔽层沉积在写入间隙层上并沿着ABS。

67. 发明申请

US20110249364A1 PMR writer with seamless shields and method of making it 有权
标题翻译： PMR作者具有无缝屏障及其制作方法
公开(公告)号：US20110249364A1
公开(公告)日：2011-10-13
申请号：US12798560
申请日：2010-04-07
申请人： Zhigang Bai , Moris Dovek , Yan Wu , Cherng-Chyi Han , Jiun-Ting Lee
发明人： Zhigang Bai , Moris Dovek , Yan Wu , Cherng-Chyi Han , Jiun-Ting Lee
IPC分类号： G11B5/187 , B05D5/00 , C23F1/02
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49039 , Y10T29/49043 , Y10T29/4906
摘要： A process (and the structure resulting therefrom) is described for manufacturing a magnetic write head in which there is no physical interface between the first and second trailing shields. This is achieved by the introduction of a sacrificial layer immediately after the top yoke plating has been done and its photoresist mold has been stripped.
摘要翻译：描述了一种用于制造其中在第一和第二后挡板之间没有物理接口的磁写头的过程（以及由此产生的结构）。这是通过在顶部磁轭镀层完成之后立即引入牺牲层并且其光致抗蚀剂模具被剥离来实现的。

68. 发明授权

US07751146B2 Abs through aggressive stitching 失效
标题翻译：通过积极的缝合
公开(公告)号：US07751146B2
公开(公告)日：2010-07-06
申请号：US11881350
申请日：2007-07-26
申请人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
发明人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
IPC分类号： G11B5/187 , G11B5/127
CPC分类号： G11B5/33 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.
摘要翻译：积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

69. 发明授权

US07631418B2 Process to form an ABS through aggressive stitching 失效
标题翻译：通过积极缝合形成ABS的过程
公开(公告)号：US07631418B2
公开(公告)日：2009-12-15
申请号：US11881316
申请日：2007-07-26
申请人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
发明人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
IPC分类号： G11B5/187
CPC分类号： G11B5/33 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： A manufacturing process is provided where aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electroplated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.
摘要翻译：提供了一种制造工艺，其中积极（即紧密公差）缝合为磁性写头提供了几个优点，但是在极修整期间以一些损失为代价。通过用一层电镀材料替换用于在修整期间保护缝合极的氧化铝填料层已经克服了这个问题。由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

70. 发明申请

US20070268628A1 Abs through aggressive stitching 失效
标题翻译：通过积极的缝合
公开(公告)号：US20070268628A1
公开(公告)日：2007-11-22
申请号：US11881350
申请日：2007-07-26
申请人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
发明人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
IPC分类号： G11B5/147
CPC分类号： G11B5/33 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.
摘要翻译：积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

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