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    • 61. 发明授权
    • Oscillator with tunable diffusion capacitance as resonant circuit capacitance
    • 具有可调扩散电容的振荡器作为谐振电路电容
    • US07209010B2
    • 2007-04-24
    • US11094534
    • 2005-03-31
    • Hans-Peter Waible
    • Hans-Peter Waible
    • H03L7/09H03B5/08H03B5/18
    • H03B5/1228H03B5/1209H03B5/1231H03B5/1243
    • An oscillator includes a resonant circuit of at least one inductance device and at least one tunable capacitance. The tunable capacitance is implemented through diffusion capacitances of at least one current-carrying transistor. The tunable capacitance has a first differential amplifier having a first transistor and a second transistor and a second differential amplifier having a third transistor and a fourth transistor Electrical properties of the first transistor and second transistor are complementary to electrical properties of the third transistor and fourth transistor, and control connections of the first transistor and the third transistor are connected to one another. Control connections of the second transistor and the fourth transistor are connected to one another. Second current connections of the first transistor and the third transistor are connected to one another, and second current connections of the second transistor and the fourth transistor are connected to one another.
    • 振荡器包括至少一个电感器件的谐振电路和至少一个可调谐电容。 可调电容通过至少一个载流晶体管的扩散电容来实现。 可调电容具有具有第一晶体管和第二晶体管的第一差分放大器和具有第三晶体管和第四晶体管的第二差分放大器第一晶体管和第二晶体管的电性能与第三晶体管和第四晶体管的电性能互补 并且第一晶体管和第三晶体管的控制连接彼此连接。 第二晶体管和第四晶体管的控制连接彼此连接。 第一晶体管和第三晶体管的第二电流连接彼此连接,第二晶体管和第四晶体管的第二电流连接彼此连接。
    • 63. 发明申请
    • Complementary metal oxide semiconductor voltage controlled oscillator
    • 互补金属氧化物半导体压控振荡器
    • US20060197621A1
    • 2006-09-07
    • US11355976
    • 2006-02-17
    • Sang-yoon JeonHeung-bae LeeSung-jae Jung
    • Sang-yoon JeonHeung-bae LeeSung-jae Jung
    • H03B5/08
    • H03B5/1228H03B5/1215H03B5/1243H03B2200/0062
    • A complementary metal oxide semiconductor voltage controlled oscillator is provided. The voltage controlled oscillator includes an LC tank which is supplied with a power supply voltage, the LC tank oscillating at a certain frequency; a negative resistor including first and second N-channel metal oxide semiconductor field effect transistors (NMOS FETs) to sustain the oscillation of the LC tank; a direct current block to remove a direct current component from the power supply voltage; an alternating current block to apply an alternating current voltage to the gates of the first and second NMOS FETs; a first current mirror including third and fourth NMOS FETs and allowing a current to symmetrically flow in the voltage controlled oscillator, a drain and the gate of the third NMOS FET being connected to a reference voltage supply; and the reference voltage supply applying a direct current voltage to the first current mirror.
    • 提供了互补金属氧化物半导体压控振荡器。 压控振荡器包括一个供应电源电压的LC箱,LC箱以一定的频率振荡; 包括第一和第二N沟道金属氧化物半导体场效应晶体管(NMOS FET)的负电阻器,以维持LC箱的振荡; 直流电流块,用于从电源电压中去除直流分量; 交流电流块,用于向第一和第二NMOS FET的栅极施加交流电压; 第一电流镜包括第三和第四NMOS FET,并允许电流在压控振荡器中对称地流动,第三NMOS FET的漏极和栅极连接到参考电压源; 并且所述参考电压电源向所述第一电流镜施加直流电压。
    • 65. 发明申请
    • Voltage-controlled oscillator and RF-IC
    • 压控振荡器和RF-IC
    • US20060181362A1
    • 2006-08-17
    • US11280819
    • 2005-11-17
    • Isao IkutaAkio YamamotoYusaku KatsubeToshiya UozumiYasuyuki Kimura
    • Isao IkutaAkio YamamotoYusaku KatsubeToshiya UozumiYasuyuki Kimura
    • H03B5/08
    • H03B5/1841H03B5/1212H03B5/1228H03B5/1243H03B5/1253
    • There are provided a voltage-controlled oscillator and an RF-IC for W-CDMA, which are capable of ensuring a wide frequency range and improving oscillation stability. The voltage-controlled oscillator (RF-IC) includes: switching A and B inductors generating a magnetic interaction between resonant A and B inductors of a resonant circuit; and an A_NMOS, a B_NMOS, a C_NMOS, and D_NMOS as switch/load means having together a function of changing an inductance value by the magnetic interaction between the resonant A and B inductors and the switching A and B inductors and a function of serving as loads of the switching A and B inductors. The A_NMOS, the B_NMOS, the C_NMOS, and the D_NMOS are turned ON/OFF by a control signal so as to control the mutual induction, whereby the oscillation frequency is switched by changing the inductance value of the resonant circuit. Also, oscillation stability is improved by increasing the inductance value.
    • 提供了一种用于W-CDMA的压控振荡器和RF-IC,其能够确保较宽的频率范围并提高振荡稳定性。 压控振荡器(RF-IC)包括:开关A和B电感器,其在谐振电路的谐振A和B电感器之间产生磁相互作用; 以及作为开关/负载的A_NMOS,B_NMOS,C_NMOS和D_NMOS一起具有通过谐振A和B电感器与开关A和B电感器之间的磁相互作用改变电感值的功能,以及用作 开关A和B电感的负载。 通过控制信号使A_NMOS,B_NMOS,C_NMOS和D_NMOS变为ON / OFF,从而控制互感,从而通过改变谐振电路的电感值来切换振荡频率。 此外,通过增加电感值来提高振荡稳定性。
    • 66. 发明申请
    • CMOS LC-tank oscillator
    • CMOS液晶振荡器
    • US20060132253A1
    • 2006-06-22
    • US11132908
    • 2005-05-19
    • Frank GelhausenKarlheinz Muth
    • Frank GelhausenKarlheinz Muth
    • H03B5/08
    • H03B5/1228H03B5/1215H03B5/1243
    • A CMOS LC-tank oscillator includes a pair of symmetric inductors and a differential pair of transistors. The inductors have a first one of their terminals interconnected at a supply node to which a voltage supply is applied through a supply resistor and a second terminal connected to the drain of a respective one of the transistors. The transistors have their sources interconnected at a tail node which is connected to ground through a tail resistor. A current control loop controls a core current between the supply and tail nodes so as to keep a voltage drop across the tail resistor at a level determined by a reference voltage. The current control loop keeps the core current between the supply and tail nodes at the required level so that a resistor may replace the upstream supply voltage regulator and another resistor may replace the downstream bias regulator. Consequently, sources of noise injected into the LC-tank type oscillator are eliminated.
    • 一个CMOS LC-槽振荡器包括一对对称电感和一对差分晶体管。 电感器具有在供电节点互连的第一个端子,通过电源电阻施加电压源,和连接到相应的一个晶体管的漏极的第二端子。 晶体管的源极在通过尾电阻连接到地的尾部节点处相互连接。 电流控制回路控制供电节点和尾节点之间的磁芯电流,以便在由参考电压确定的电平上保持尾电阻上的电压降。 电流控制回路将电源和尾节点之间的磁芯电流保持在所需电平,使得电阻器可以替代上游电源电压调节器,另一个电阻器可以替代下游偏置调节器。 因此,消除了注入到LC槽型振荡器中的噪声源。
    • 68. 发明申请
    • CMOS single-ended frequency doubler
    • CMOS单端倍频器
    • US20060097810A1
    • 2006-05-11
    • US10973277
    • 2004-10-27
    • Pierre Guebels
    • Pierre Guebels
    • H03B5/08
    • H03B19/14
    • A CMOS single-ended frequency doubler with improved subharmonic rejection and low phase noise which allows a single ended reference signal to be utilized in a Balanced Colpitts oscillator. The input is reproduced with a 180-degree phase shift for the opposite Colpitts transistor. This is achieved by adding two PMOS transistors. One transistor is placed as a follower, which reproduces any voltage shift applied to its gate to its source. Another transistor is a matching transistor for balance. By applying the single-ended signal to the gate of the follower transistor, it is reproduced at the source. The rest of the circuit takes advantage of the summing of two period currents with a 180-degree phase shift. The present invention achieves superior performance for frequency doubling due to the squaring of the gate voltage in the corresponding drain current. As a result, the double frequency component is further enhanced.
    • 具有改进的次谐波抑制和低相位噪声的CMOS单端倍频器,允许在平衡Colpitts振荡器中使用单端参考信号。 对于相反的Colpitts晶体管,输入以180度相移再现。 这是通过添加两个PMOS晶体管来实现的。 一个晶体管被放置为跟随器,其将施加到其栅极的任何电压移位到其源极。 另一个晶体管是用于平衡的匹配晶体管。 通过将单端信号应用于跟随晶体管的栅极,在源极处再生。 电路的其余部分利用了具有180度相移的两个周期电流的相加。 由于相应的漏极电流中的栅极电压的平方,本发明实现了倍频的优异性能。 结果,双频分量进一步提高。