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    • 61. 发明授权
    • Maintenance termination unit for telephone circuits
    • 电话线路维护终端单元
    • US5652575A
    • 1997-07-29
    • US360756
    • 1994-12-21
    • Dennis Malcolm PryorMichael Challis
    • Dennis Malcolm PryorMichael Challis
    • H03K17/74H02H3/10H02H9/04H04M3/18H04M3/30H04B3/46
    • H04M3/301H02H3/10H04M3/18H02H9/041
    • A maintenance termination unit (MTU) for use in telephone circuits. The MTU comprises a switching arrangement which can be connected between sets of terminal equipment in a communications channel comprising a pair of lines. The switching arrangement comprises: a DC voltage window detector circuit which, in use, is connected between the lines and is responsive to a voltage between the lines; and series switching circuits, which, in use, are connected in the lines. The arrangement may also include a shunt switching circuit, which, in use, is connected between the lines. The arrangement includes low pass filters associated with the switching circuits. The DC voltage window detector circuit will actuate the switching circuits when the DC voltage between the lines is within respective predetermined bands, but will not actuate the switching circuits when the DC voltage between the lines is not within the respective predetermined bands. The switching circuits can be remotely actuated by means of a DC signal on the channel. The low pass filters have a cut-off frequency which is sufficiently low to prevent the switching circuits from being actuated by a ringing signal on the channel.
    • PCT No.PCT / GB93 / 01376 Sec。 371日期1994年12月21日 102(e)日期1994年12月21日PCT提交1993年6月30日PCT公布。 公开号WO94 / 01961 日期1994年1月20日用于电话线路的维护终端单元(MTU)。 MTU包括可以在包括一对线路的通信信道中连接在一组终端设备之间的交换装置。 开关装置包括:直流电压窗检测器电路,其在使用中连接在线路之间并响应于线路之间的电压; 和在使用中连接在一起的串联开关电路。 该布置还可以包括在使用中连接在线之间的分流开关电路。 该装置包括与开关电路相关联的低通滤波器。 当线路之间的直流电压在相应的预定频带内时,直流电压窗口检测器电路将致动开关电路,但是当线路之间的直流电压不在相应的预定频带内时,直流电压窗口检测器电路将不致动开关电路。 开关电路可以通过通道上的直流信号进行远程启动。 低通滤波器具有足够低的截止频率,以防止开关电路被通道上的振铃信号驱动。
    • 62. 发明授权
    • Low power diode
    • 低功率二极管
    • US5506527A
    • 1996-04-09
    • US227935
    • 1994-04-15
    • Daniel C. RudolphCharles S. Stephens
    • Daniel C. RudolphCharles S. Stephens
    • H03G11/02G06G7/62H03K17/30H03K17/66H03K17/74G06G7/12H03K3/26
    • H03K17/302G06G7/62H03K17/667H03K2017/307
    • A common dictionary definition of a "diode" is "any electronic device that restricts current flow chiefly to one direction." This definition covers not only the conventional two lead PN junction semiconductor device presently known in the prior art (referred to herein as a "conventional diode") but also the electronic device of this invention (referred to herein as a "low power diode"). A low power diode has a comparator for comparing the voltage present at the anode and cathode of the diode. When the comparator determines that the voltage present at the anode of the low power diode equals or exceeds the voltage present at the cathode of the low power diode by a predetermined forward voltage, a signal is generated. This signal turns on a transistor acting as a switch, which in turn electronically connects the anode and the cathode of the low power diode together. Unlike conventional diodes that have a forward voltage (dependent on the physical silicon junction property of the diode) of approximately 0.7 Volts, this low power diode has a very small forward voltage (dependent on the drain to source resistance of the switch when on and the offset of the comparator) as low as 0.25 milliVolts.
    • “二极管”的通用字典定义是“主要限制当前流向一个方向的任何电子设备”。 该定义不仅覆盖了现有技术中已知的传统的两引线PN结半导体器件(本文中称为“常规二极管”),而且还涵盖本发明的电子器件(本文中称为“低功率二极管”) 。 低功率二极管具有用于比较存在于二极管的阳极和阴极处的电压的比较器。 当比较器确定存在于低功率二极管的阳极处的电压等于或超过在低功率二极管的阴极处存在的预定正向电压时,产生信号。 该信号导通用作开关的晶体管,其又将低功率二极管的阳极和阴极电连接在一起。 与具有大约0.7伏的正向电压(取决于二极管的物理硅结特性)的传统二极管不同,这种低功率二极管具有非常小的正向电压(取决于开关的漏极和源极电阻, 比较器的偏移)低至0.25毫伏。
    • 64. 发明授权
    • Power-efficient sample and hold circuit using bipolar transistors of
single conductivity type
    • 采用单导电型双极晶体管的高效采样保持电路
    • US5315169A
    • 1994-05-24
    • US894980
    • 1992-06-08
    • Lloyd F. LinderBenjamin FelderDwight D. Birdsall
    • Lloyd F. LinderBenjamin FelderDwight D. Birdsall
    • G11C27/02H03F3/50H03F3/72H03K17/00H03K17/74H03K5/24
    • H03F3/50G11C27/026H03F3/72H03K17/74H03K2217/0036
    • A diode bridge includes a plurality of diodes for coupling an input voltage signal to a holding capacitor for sampling when the diodes are forward biased, and uncoupling the voltage signal from the capacitor for holding when the diodes are reverse biased. The diode bridge has first and second bias current nodes. A constant current drain causes a constant bias current to flow out of the bridge. A transistor connects the first node to the drain for forward biasing the diodes, whereas a transistor connects the second node to the drain for reverse biasing the diodes. A bootstrap amplifier (A2) produces a variable control voltage which controls a pair of voltage-controlled constant current sources to cause the constant bias current to flow therethrough into the bridge. A transistor (Q7) couples the control voltage to the first current source for forward biasing the diodes, whereas a transistor couples the control voltage to the second current source for reverse biasing the diodes. The transistors are all bipolar and of the same conductivity type, preferably NPN.
    • 二极管桥包括多个二极管,用于将输入电压信号耦合到保持电容器,用于当二极管正向偏置时进行采样,以及当二极管反向偏置时,将来自电容器的电压信号与电容器断开耦合以进行保持。 二极管桥具有第一和第二偏置电流节点。 恒流漏极导致恒定的偏置电流流出桥。 晶体管将第一节点连接到漏极,用于正向偏置二极管,而晶体管将第二节点连接到漏极,以反向偏置二极管。 自举放大器(A2)产生可变控制电压,其控制一对电压控制的恒流源,以使恒定的偏置电流流过其中。 晶体管(Q7)将控制电压耦合到第一电流源以用于正向偏置二极管,而晶体管将控制电压耦合到第二电流源以反向偏置二极管。 晶体管都是双极型的,具有相同的导电类型,最好是NPN。
    • 65. 发明授权
    • Bridge type switching circuit having a single switchable current source
    • 具有单个可切换电流源的桥式切换电路
    • US5089720A
    • 1992-02-18
    • US542219
    • 1990-06-21
    • Gilbert Gloaguen
    • Gilbert Gloaguen
    • G11C27/02H03K17/74
    • G11C27/024
    • A sample-and-hold circuit comprising a diode bridge that includes a first serial branch including first (T.sub.1) and second (D.sub.3) D.C. diodes connected in parallel with a second serial branch including third (T.sub.2) and fourth (D.sub.4) D.C. diodes. At least one end (B) common to the above two serial branches is connected to a first switchable current source (T.sub.3, T.sub.4, I) providing a sampling state in which the current source (I) is coupled to the first common end (B) and a blocking state in which it is uncoupled from the first common end (B). The first branch comprises an input terminal (E) for receiving an input voltage, and the second serial branch includes an output terminal (S) connected to a memory capacitor. In order to switch the bridge by means of a single current source, the third diode is constituted by the base-emitter path of a first transistor (T.sub.2) whose collector is connected to a supply voltage source. The second common end (A) of said two branches is now the junction point of the first (T.sub.1) and third (T.sub.2) diodes and a first resistor (R) is inserted between the second common end (A) and the supply voltage source (V.sub.cc). The first switchable current source is connected to the second common end (A) in the blocking state.
    • 一种采样和保持电路,包括二极管桥,该二极管桥包括第一串联支路,该第一串联支路包括与包括第三(T2)和第四(D4)直流二极管的第二串联支路并联连接的第一(T1)和第二(D3)直流二极管。 上述两个串行分支共用的至少一个端(B)连接到提供采样状态的第一可切换电流源(T3,T4,I),其中电流源(I)耦合到第一公共端(B )和从第一公共端(B)分离的阻塞状态。 第一分支包括用于接收输入电压的输入端子(E),第二串行支路包括连接到存储电容器的输出端子(S)。 为了通过单个电流源切换桥,第三二极管由第一晶体管(T2)的基极 - 发射极路径构成,其集电极连接到电源电压源。 所述两个分支的第二公共端(A)现在是第一(T1)和第三(T2)二极管的连接点,并且第一电阻器(R)插入在第二公共端(A)和电源电压源 (Vcc)。 第一可切换电流源以阻塞状态连接到第二公共端(A)。
    • 68. 发明授权
    • Power MOSFET gate driver circuit
    • 功率MOSFET栅极驱动电路
    • US4748351A
    • 1988-05-31
    • US900578
    • 1986-08-26
    • Farhad Barzegar
    • Farhad Barzegar
    • H03K17/687H03K17/16H03K17/691H03K17/74H03K3/33
    • H03K17/691
    • A MOSFET gate driver circuit reduces the noise susceptibility of a MOSFET switch by utilizing dual drive paths to apply turn-on and turn-off bias signals to the gate of the MOSFET. Drive pulses are coupled to the MOSFET switch via a pulse transformer which has two serially connected secondary windings. Turn-on pulses are coupled by a diode from the first secondary to the MOSFET gate. Turn-off pulses are coupled via the second secondary to a control MOSFET which is turned on by a turn-off pulse and remains on in order to keep the gate of the MOSFET switch to a hold off voltage.
    • MOSFET栅极驱动器电路通过利用双驱动路径将MOSFET开关的噪声敏感性降低到MOSFET的栅极,从而将导通和关断偏置信号施加于MOSFET的栅极。 驱动脉冲通过具有两个串联连接的次级绕组的脉冲变压器耦合到MOSFET开关。 导通脉冲由二极管从第一次级耦合到MOSFET栅极。 关断脉冲经由第二次级耦合到控制MOSFET,该控制MOSFET由关断脉冲导通,并保持导通,以便将MOSFET开关的栅极保持为截止电压。
    • 70. 发明授权
    • RF switch with diode network and control latch sharing common element
    • RF开关具有二极管网络和控制锁存共享元件
    • US4742249A
    • 1988-05-03
    • US934965
    • 1986-11-25
    • Feroz K. AlpaiwallaRobert H. Begeman
    • Feroz K. AlpaiwallaRobert H. Begeman
    • H03K3/286H03K17/74H03K17/76H03K17/60
    • H03K3/286H03K17/74H03K17/76
    • A diode network includes a series branch coupled between two signal ports and a shunt branch coupled between a node in the series branch and ground and connected in parallel with a transistor of a latching circuit that is further coupled to supply forward bias to the shunt branch and reverse bias to the series branch when the transistor is conductive for blocking RF signal flow between the ports. The bias applied to the branches is reversed when the latch transistor is non-conductive thereby enabling RF signal flow between the ports. The transistor provides plural functions of establishing positive feedback for the latch, supplying forward and reverse bias to the shunt and series branches, respectively, and enhancing the attenuation of the shunt branch when conductive.
    • 二极管网络包括耦合在两个信号端口之间的串联支路和耦合在串联支路中的节点和地之间的并联并与锁存电路的晶体管并联连接的并联支路的并联支路,该晶体管进一步耦合以向分路支路提供正向偏置, 当晶体管导通以阻止端口之间的RF信号流动时,反向偏置到串联支路。 当锁存晶体管不导通时,施加到分支的偏置反转,从而使得能够在端口之间的RF信号流动。 晶体管提供了多种功能,为锁存器建立正反馈,分别向分路和串联支路提供正向和反向偏置,并在导通时增强分路支路的衰减。