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    • 2. 发明授权
    • Electronic device comprising RF-LDMOS transistor having improved ruggedness
    • 包括具有改善的耐久性的RF-LDMOS晶体管的电子器件
    • US09019671B2
    • 2015-04-28
    • US13887212
    • 2013-05-03
    • NXP B.V.
    • Johannes Adrianus Maria De Boet
    • H01L29/78H03G11/02H03K17/0814
    • H01L29/7818H03G11/02H03K17/08142
    • The invention relates to an electronic device comprising an RF-LDMOS transistor (1) and a protection circuit (2) for the RF-LDMOS transistor. The protection circuit (2) comprises: i) an input terminal (Ni) coupled to a drain terminal (Drn) of the RF-LDMOS transistor (1); ii) a clipping node (Nc); iii) a clipping circuit (3) coupled to the clipping node (Nc) for substantially keeping the voltage on the clipping node (Nc) below a predefined reference voltage, wherein the predefined reference voltage is designed to be larger than the operation voltage on the drain terminal (Drn) and lower than a trigger voltage of a parasitic bipolar transistor (100) that is inherently present in the RF-LDMOS transistor; iv) a capacitance (Ct) coupled between the clipping node (Nc) and a further reference voltage terminal (Gnd), and v) a rectifying element (D1, D2) connected with its anode terminal to the input terminal (Ni) and with its cathode terminal to the clipping node (Nc). The invention provides an RF-LDMOS transistor having an improved RF ruggedness, while not, or at least to a much lesser extent, compromising the RF performance of the RF-LDMOS transistor.
    • 本发明涉及一种包括用于RF-LDMOS晶体管的RF-LDMOS晶体管(1)和保护电路(2)的电子器件。 保护电路(2)包括:i)耦合到RF-LDMOS晶体管(1)的漏极端子(Drn)的输入端子(Ni); ii)剪切节点(Nc); iii)耦合到限幅节点(Nc)的削波电路(3),用于将剪切节点(Nc)上的电压基本上保持在预定的参考电压以下,其中预定的参考电压被设计为大于在 漏极端子(Drn)并且低于固有地存在于RF-LDMOS晶体管中的寄生双极晶体管(100)的触发电压; iv)耦合在所述剪切节点(Nc)和另一参考电压端(Gnd)之间的电容(Ct),以及v)与其阳极端子连接到输入端子(Ni)的整流元件(D1,D2) 其阴极端子到剪切节点(Nc)。 本发明提供了具有改进的RF耐久性的RF-LDMOS晶体管,而不是或至少在较小程度上损害了RF-LDMOS晶体管的RF性能。
    • 6. 发明授权
    • Amplifier
    • 放大器
    • US07961044B2
    • 2011-06-14
    • US12592308
    • 2009-11-23
    • Masayuki Iwamatsu
    • Masayuki Iwamatsu
    • H03G3/20
    • H03G11/02H03G3/30H03G7/06
    • An amplifier includes: a variable gain unit that adjusts an amplitude of an input signal and outputs a first signal; an amplitude limiting unit that limits an amplitude of the first signal and outputs a second signal set to have an amplitude of a first amplitude value or less; an amplifying unit that amplifies the second signal to output the amplified second signal as an output signal; and a control unit that detects when the first signal has an amplitude of a second amplitude value or more to control a gain of the variable gain unit so that the amplitude of the first signal becomes less than the second amplitude value, the second amplitude value being larger than the first amplitude value.
    • 放大器包括:可变增益单元,其调节输入信号的幅度并输出第一信号; 幅度限制单元,其限制第一信号的幅度并输出具有第一振幅值或更小的幅度的第二信号; 放大单元,放大第二信号以输出放大的第二信号作为输出信号; 以及控制单元,其检测第一信号何时具有第二振幅值的幅度以控制可变增益单元的增益,使得第一信号的幅度变得小于第二振幅值,第二振幅值为 大于第一幅度值。
    • 9. 发明申请
    • Input power limiter for a microwave receiver
    • 微波接收机的输入功率限制器
    • US20020180552A1
    • 2002-12-05
    • US09865680
    • 2001-05-29
    • Jeffrey H. BennettYuanfei Cen
    • H01P001/22
    • H03G11/02
    • A power limiter for limiting power of high frequency signals at an input to a receiver comprises a plurality of transmission line sections connected in succession Each section has a series inductance coupling an input to an output of the section, and a shunt capacitance constituted by capacitance of at least one pair of oppositely-poled Schottky diodes coupled at the output of the section to limit voltage of the signal at the output. Individual diodes can be replaced by series-connected diodes, or by an array of parallel and series-connected diodes, in different sections for improved performance of the limiter. The limiter can be integrated with a GaAs low noise amplifier of the receiver.
    • 用于限制接收机输入端的高频信号功率的功率限制器包括连续连接的多个传输线段。每个部分具有将输入耦合到该部分的输出的串联电感和由该部分的输出组成的并联电容 耦合在该部分输出处的至少一对相对极化的肖特基二极管来限制输出端的信号电压。 单个二极管可以由串联连接的二极管或者通过并联和串联连接的二极管阵列替代,以改善限制器的性能。 限幅器可以与接收器的GaAs低噪声放大器集成。
    • 10. 发明授权
    • Method and apparatus for providing limiting transimpedance amplification
    • 提供限制性跨阻放大的方法和装置
    • US5708392A
    • 1998-01-13
    • US602709
    • 1996-02-16
    • Winthrop A. Gross
    • Winthrop A. Gross
    • H03F1/08H03F3/08H03G11/02H03F1/34
    • H03G11/02H03F1/083H03F3/08
    • A limiting transimpedance amplifier includes an amplifier stage including a feedback resistor, a limiting diode coupled across the feedback resistor, and a stabilization diode coupled to the amplifier stage to compensate for feedback instability introduced by the limiting diode. The amplifier stage includes an input transistor and an output transistor, where the feedback resistor couples an output of the output transistor to an input of an input transistor. A stabilization voltage generator is coupled to the stabilization diode to provide a stabilization voltage that causes the desired compensation. A method for providing limited transimpedance amplification includes the steps of: (a) amplifying an input current signal at an input node to develop an output voltage signal at an output node; (b) limiting the range of the output voltage signal by providing a feedback path between the output node and the input node that includes the parallel connection of a feedback resistor and a limiting diode; and (c) compensating for instability in the output voltage signal caused by the limiting diode in the feedback path.
    • 限制跨阻放大器包括放大器级,其包括反馈电阻器,跨反馈电阻器耦合的限制二极管和耦合到放大器级的稳定二极管,以补偿由限制二极管引入的反馈不稳定性。 放大器级包括输入晶体管和输出晶体管,其中反馈电阻将输出晶体管的输出耦合到输入晶体管的输入。 稳定电压发生器耦合到稳定二极管以提供导致所需补偿的稳定电压。 一种用于提供有限跨阻抗放大的方法包括以下步骤:(a)在输入节点处放大输入电流信号,以在输出节点处产生输出电压信号; (b)通过在输出节点和输入节点之间提供反馈路径来限制输出电压信号的范围,该反馈路径包括反馈电阻器和限制二极管的并联连接; 和(c)补偿由反馈路径中的限制二极管引起的输出电压信号的不稳定性。