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    • 64. 发明授权
    • Method of forming metal hydride films
    • 形成金属氢化物膜的方法
    • US4055686A
    • 1977-10-25
    • US659882
    • 1976-02-20
    • Robert SteinbergDonald L. AlgerDale W. Cooper
    • Robert SteinbergDonald L. AlgerDale W. Cooper
    • C01B6/02C23C8/08G21G4/02G21G3/04
    • C23C8/08C01B6/02G21G4/02Y10S376/916
    • There is disclosed a method of forming a continuous, thin film of stoichiometric metal hydride such as titanium dihydride, titanium dideuteride, or titanium ditritide on a substrate which may be of metal, glass or the like. The substrate is first cleaned, both chemically and by off-sputtering in a vacuum chamber. In an ultra-high vacuum system vapor deposition by a sublimator or vaporizer first coats a cooled shroud disposed around the substrate with a thin film of hydride forming metal which getters any contaminant gas molecules. A shutter is then opened to allow hydride forming metal to be deposited as a film or coating on the substrate.After the hydride forming metal coating is formed, a deuterium or other hydrogen isotopes are bled into the vacuum system and diffused into the metal film or coating to form a hydride of metal film. Higher substrate temperatures and pressures may be used if various parameters are appropriately adjusted.
    • 公开了在可以是金属,玻璃等的基板上形成连续的化学计量的金属氢化物薄膜,例如二氢化钛,二氘代钛或二氯化钛的方法。 首先在真空室中进行化学和非溅射清洗衬底。 在超高真空系统中,通过升华器或蒸发器的气相沉积首先用设置在衬底周围的冷却的护罩涂覆有吸收任何污染气体分子的氢化物形成金属的薄膜。 然后打开快门以允许氢化物形成金属作为膜或涂层沉积在基底上。