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61. 发明授权

US07846625B2 Phase shift mask 失效
标题翻译：相移掩模
公开(公告)号：US07846625B2
公开(公告)日：2010-12-07
申请号：US12172880
申请日：2008-07-14
申请人： Miyoko Kawashima
发明人： Miyoko Kawashima
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F7/70425 , G03F1/26 , G03F7/70558 , G03F7/70566
摘要： A phase shift mask includes a substrate including first and second transmissive regions alternately disposed, and absorbers disposed on a surface of the substrate such that each absorber is sandwiched between the first and second transmissive regions. A phase shifter is defined by a difference between a surface height of the first transmissive region and a surface height of the second transmissive region. At least the first transmissive region among the first and second transmissive regions has a trench. An aperture portion formed between opposite side walls of respective adjacent absorbers has a width that increases along a depth direction of the substrate. Each trench has a width that increases along the depth direction of the substrate.
摘要翻译：相移掩模包括包括交替设置的第一和第二透射区域的基板和设置在基板的表面上的吸收体，使得每个吸收体夹在第一和第二透射区域之间。移相器由第一透射区域的表面高度和第二透射区域的表面高度之间的差定义。至少第一和第二透射区域中的第一透射区域具有沟槽。形成在各个相邻吸收体的相对侧壁之间的开口部分具有沿衬底的深度方向增加的宽度。每个沟槽具有沿衬底的深度方向增加的宽度。

62. 发明授权

US07829267B2 Stamper, method of forming a concave/convex pattern, and method of manufacturing an information recording medium 失效
标题翻译：压模，形成凹/凸图案的方法，以及信息记录介质的制造方法
公开(公告)号：US07829267B2
公开(公告)日：2010-11-09
申请号：US11653918
申请日：2007-01-17
申请人： Minoru Fujita , Mikiharu Hibi
发明人： Minoru Fujita , Mikiharu Hibi
IPC分类号： B29D17/00 , G03C5/00
CPC分类号： B29D17/005 , B29C33/424 , B29C43/021 , B29C43/361 , B29C2033/426 , B29C2043/025 , B29C2043/3655 , B29C2043/5858 , G11B5/855 , G11B7/263
摘要： A stamper is formed so that a thickness between a concave/convex pattern formation surface, where a concave/convex pattern is formed, and a rear surface gradually decreases in a predetermined area of the stamper. The predetermined area corresponds to an area where pressure is likely to be concentrated when the concave/convex pattern of the stamper is used to form a concave/convex pattern on a substrate. A method of forming a concave/convex pattern uses such stamper, and a method of manufacturing an information recording medium uses a concave/convex pattern formed by such method.
摘要翻译：形成压模，使得在压模的预定区域中形成凹凸图案的凹凸图案形成表面与后表面之间的厚度逐渐减小。当使用压模的凹凸图案在基板上形成凹凸图案时，预定区域对应于压力可能集中的区域。形成凹凸图案的方法使用这种压模，并且制造信息记录介质的方法使用通过这种方法形成的凹凸图案。

63. 发明授权

US07829247B2 Photomask and method for forming wiring pattern using the same 有权
标题翻译：光掩模和使用其形成布线图案的方法
公开(公告)号：US07829247B2
公开(公告)日：2010-11-09
申请号：US11892082
申请日：2007-08-20
申请人： Yoshinori Maeno
发明人： Yoshinori Maeno
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/50
摘要： A photomask includes a transparent mask substrate, and a plurality of square mask cells provided on the mask substrate. Each mask cell includes at least one of a light transmitting region and a light shielding region. A planar region (in which the mask cells are formed) of the mask substrate includes a first region, a second region surrounding the first region, and a third region outside the second region. The first region includes a first group of mask cells transmitting lights of a first light intensity greater than zero and less than or equal to 1. The second region includes a second group of mask cells transmitting lights of a second light intensity greater than zero and less than the first light intensity. The third region includes a third group of mask cells transmitting lights of a third light intensity greater than or equal to zero and less than the second light intensity.
摘要翻译：光掩模包括透明掩模基板和设置在掩模基板上的多个方形掩模单元。每个掩模单元包括透光区域和遮光区域中的至少一个。掩模基板的平面区域（其中形成有掩模单元的）包括第一区域，围绕第一区域的第二区域和第二区域外的第三区域。第一区域包括透射大于零且小于或等于1的第一光强度的光的第一组掩模电池。第二区域包括透射大于零和小于零的第二光强度的光的第二组屏蔽单元比第一光强度。第三区域包括透射第三光强度大于或等于零且小于第二光强度的光的第三组掩模单元。

64. 发明授权

US07823103B2 Method and system of introducing hierarchy into design rule checking test cases and rotation of test case data 有权
标题翻译：将层次结构引入设计规则检查测试用例和测试用例数据旋转的方法和系统
公开(公告)号：US07823103B2
公开(公告)日：2010-10-26
申请号：US11552245
申请日：2006-10-24
申请人： William F. Pokorny
发明人： William F. Pokorny
IPC分类号： G06F17/50 , G06F9/455 , G03F1/00 , G03C5/00
CPC分类号： G06F17/5081
摘要： A method and system for validating a design rule checking program. The method and system includes creating a hierarchal structure such that each layer of the hierarchal structure corresponds to a process layer of a device or subregion of a shape. The method and system further includes inserting the created hierarchical structure into a DRC program and running the DRC program at least once with hierarchical optimization options turned off. The method and system compares the expected results with actual results. The differences between the expected results and the actual results actual results indicate errors in the DRC program.
摘要翻译：一种用于验证设计规则检查程序的方法和系统。方法和系统包括创建层级结构，使得层级结构的每个层对应于形状的设备或子区域的过程层。所述方法和系统还包括将所创建的层次结构插入到DRC程序中并且在分层优化选项被关闭的情况下运行DRC程序至少一次。该方法和系统将预期结果与实际结果进行比较。预期结果与实际结果实际结果之间的差异表明DRC计划中的错误。

65. 发明授权

US07820364B2 Semiconductor device manufacturing method, mask manufacturing method, and exposure method 有权
标题翻译：半导体器件制造方法，掩模制造方法和曝光方法
公开(公告)号：US07820364B2
公开(公告)日：2010-10-26
申请号：US11411019
申请日：2006-04-26
申请人： Fumitoshi Sugimoto
发明人： Fumitoshi Sugimoto
IPC分类号： G03F7/00 , G03F1/00 , G03C5/00
CPC分类号： G03F7/70466 , G03F1/70
摘要： In order to form a transfer pattern of desired size with high accuracy, a method for manufacturing a semiconductor device includes a process of forming the transfer pattern including a line whose width and angle varies, by performing multiple exposure using a plurality of masks having different patterns over different mask substrates.
摘要翻译：为了高精度地形成期望尺寸的转印图案，制造半导体器件的方法包括通过使用具有不同图案的多个掩模进行多次曝光来形成包括其宽度和角度变化的线的转印图案的处理在不同的掩模基板上。

66. 发明授权

US07816062B2 Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern 有权
标题翻译：用于半导体器件生产过程监控的方法和装置以及用于估计图案的截面形状的方法和装置
公开(公告)号：US07816062B2
公开(公告)日：2010-10-19
申请号：US11592175
申请日：2006-11-03
申请人： Wataru Nagatomo , Hidetoshi Morokuma , Atsushi Miyamoto , Hideaki Sasazawa
发明人： Wataru Nagatomo , Hidetoshi Morokuma , Atsushi Miyamoto , Hideaki Sasazawa
IPC分类号： G03F9/00 , G03C5/00 , G21G5/00
CPC分类号： H01L22/12 , H01L2924/0002 , Y10S430/143 , H01L2924/00
摘要： In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.
摘要翻译：在曝光处理或蚀刻处理中，从SEM图像计算出用于估计目标评价图案的截面形状，图案的处理条件或图案的装置特性的图像特征量。将图像特征量与将预先存储在数据库中的数据相关联的学习数据与将图案的截面形状，图案的处理条件或者图案的装置特性相关联的学习数据与从SEM计算出的图像特征量相关联图片。由此，非破坏性地计算目标评价图案的截面形状，图案的处理条件或图案的装置特性。

67. 发明授权

US07776514B2 Pattern forming method, semiconductor device manufacturing method and phase shift photomask having dummy gate patterns 有权
标题翻译：图案形成方法，半导体器件制造方法和具有虚拟栅极图案的相移光掩模
公开(公告)号：US07776514B2
公开(公告)日：2010-08-17
申请号：US11374009
申请日：2006-03-14
申请人： Masashi Fujimoto
发明人： Masashi Fujimoto
IPC分类号： H01L21/00 , G03F1/00 , G03C5/00
CPC分类号： G03F1/70 , G03F1/26
摘要： In a method for forming a plurality of gate patterns in parallel with each other on a photoresist layer within one circuit block, at least one dummy gate pattern is formed in parallel with the gate patterns when a pitch between said gate patterns is larger than a predetermined maximum pitch, so that pitches between the gate patterns including the dummy gate pattern are smaller than the predetermined maximum pitch. Then, a photolithography process is performed upon the photoresist layer by using a phase shift photomask having first and second openings whose difference in phase is π. The first and second openings alternate between the gate patterns including the dummy gate pattern to form phase edges therein.
摘要翻译：在一个电路块内的光致抗蚀剂层上形成彼此平行的多个栅极图案的方法中，当所述栅极图案之间的间距大于预定的栅极图案时，形成与栅极图案平行的至少一个伪栅极图案使得包括伪栅极图案的栅极图案之间的间距小于预定的最大间距。然后，通过使用具有相位差为“pgr”的第一和第二开口的相移光掩模，在光致抗蚀剂层上进行光刻工艺。第一和第二开口在包括伪栅极图案的栅极图案之间交替，以在其中形成相位边缘。

68. 发明授权

US07776506B2 Coating compositions for photoresists 有权
标题翻译：光刻胶的涂料组合物
公开(公告)号：US07776506B2
公开(公告)日：2010-08-17
申请号：US11651090
申请日：2007-01-08
申请人： Deyan Wang , Peter Trefonas, III , Michael K. Gallagher
发明人： Deyan Wang , Peter Trefonas, III , Michael K. Gallagher
IPC分类号： G03C1/76 , G03C1/492 , G03C1/494 , G03C5/00
CPC分类号： G03F7/11 , G03F7/0392 , G03F7/2041
摘要： In one aspect, the present invention relates to coating compositions that comprise a resin component, wherein the predominant portion of the resin component comprising one or more resins that are at least substantially free of fluorine. Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.
摘要翻译：一方面，本发明涉及包含树脂组分的涂料组合物，其中树脂组分的主要部分包含至少基本上不含氟的一种或多种树脂。本发明的涂料组合物可用作光致抗蚀剂外涂层，包括浸渍光刻加工。

69. 发明授权

US07759026B2 Method and system for manufacturing a reticle using character projection particle beam lithography 有权
标题翻译：使用字符投影粒子束光刻制作掩模版的方法和系统
公开(公告)号：US07759026B2
公开(公告)日：2010-07-20
申请号：US12202364
申请日：2008-09-01
申请人： Akira Fujimura , Lance Glasser , Takashi Mitsuhashi , Kazuyuki Hagiwara
发明人： Akira Fujimura , Lance Glasser , Takashi Mitsuhashi , Kazuyuki Hagiwara
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03B27/42 , B82Y10/00 , B82Y40/00 , G03F1/78 , H01J37/3174 , Y10S430/143
摘要： A method for manufacturing a surface, the surface having a multiplicity of slightly different patterns, is disclosed with the method comprising the steps of designing a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. A system for manufacturing a surface is also disclosed.
摘要翻译：公开了一种用于制造表面的方法，该表面具有多个稍微不同的图案，该方法包括以下步骤：设计具有用于在表面上形成图案的一组字符的模版掩模，并减少镜头数量或总写入时间通过使用字符变化技术。还公开了一种用于制造表面的系统。

70. 发明授权

US07749687B2 Pattern forming method used in semiconductor device manufacturing and method of manufacturing semiconductor device 失效
标题翻译：半导体器件制造中使用的图案形成方法和半导体器件的制造方法
公开(公告)号：US07749687B2
公开(公告)日：2010-07-06
申请号：US11798724
申请日：2007-05-16
申请人： Hiroko Nakamura
发明人： Hiroko Nakamura
IPC分类号： G03C5/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/31058 , H01L21/31144 , H01L21/76816
摘要： A method of forming a pattern on a photosensitive resin film in lithography, a method of forming a pattern for a semiconductor device, and a method of manufacturing a semiconductor device using the patterned film are disclosed. In an aspect of the invention, there is provided a method of forming a pattern on a photosensitive resin film, comprising forming a processing-object film above a semiconductor substrate, forming a first patterned photosensitive resin layer on the processing-object film, implanting ions into the first patterned photosensitive resin layer, the sum (Rp+3dRp) of a projected range (Rp) for the ions in the first photosensitive resin layer and three times a standard deviation (dRp) of the projected range being greater than a thickness of the first patterned photosensitive resin layer, and forming a second patterned photosensitive resin layer on the ion-implanted first patterned photosensitive resin layer.
摘要翻译：公开了一种在光刻中在感光性树脂膜上形成图案的方法，形成半导体器件用图案的方法以及使用该图案化膜的半导体器件的制造方法。在本发明的一个方面，提供了一种在感光性树脂膜上形成图案的方法，包括在半导体衬底上形成处理对象膜，在处理对象膜上形成第一图案化感光树脂层，将离子在第一图案感光性树脂层中，第一感光性树脂层中的离子的投影范围（Rp）的和（Rp + 3dRp）和投影范围的标准偏差（dRp）的三倍大于第一图案化感光树脂层，并且在离子注入的第一图案化感光树脂层上形成第二图案化感光树脂层。

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