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1. 发明申请

US20180322975A1 Method of making a mercury based compound, mercury based compound, methods of using the mercury based compound and uses of the mercury based compound 审中-公开
公开(公告)号：US20180322975A1
公开(公告)日：2018-11-08
申请号：US15569238
申请日：2016-03-16
申请人： Suneel Navnitdas Parekh
发明人： Suneel Navnitdas Parekh
IPC分类号： G21G5/00 , C01G35/00 , C01B32/907 , C01G13/00 , C01G55/00 , C01G53/00 , G21F9/06 , G21B3/00
CPC分类号： G21G5/00 , C01B32/907 , C01G13/00 , C01G13/006 , C01G13/04 , C01G35/006 , C01G53/006 , C01G55/002 , C01P2002/72 , C01P2002/74 , C01P2002/82 , C01P2002/86 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/61 , C01P2004/64 , C01P2006/42 , G21B3/00 , G21F9/06 , G21F9/28 , G21F9/30 , G21Y2002/60 , G21Y2004/10
摘要： The present invention relates to a method of making a mercury based compound, to a mercury based compound and to methods of using the mercury based compound and to uses of the mercury based compound.

2. 发明授权

US09915628B2 Circuit tracing using a focused ion beam 有权
公开(公告)号：US09915628B2
公开(公告)日：2018-03-13
申请号：US15174260
申请日：2016-06-06
申请人： TECHINSIGHTS INC.
发明人： Christopher Pawlowicz , Alexander Sorkin , Michael W. Phaneuf , Alexander Krechmer , Ken G. Lagarec
IPC分类号： G21G5/00 , G01N23/225 , H01J37/22 , H01L21/66 , G01R31/303
CPC分类号： G01N23/2255 , G01R31/303 , H01J37/222 , H01J2237/24564 , H01J2237/24585 , H01J2237/2803 , H01J2237/2809 , H01J2237/31749 , H01L22/12
摘要： Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.

3. 发明授权

US09383327B2 Circuit tracing using a focused ion beam 有权
标题翻译：使用聚焦离子束的电路跟踪
公开(公告)号：US09383327B2
公开(公告)日：2016-07-05
申请号：US14309674
申请日：2014-06-19
申请人： TECHINSIGHTS, INC.
发明人： Chris Pawlowicz , Alexander Sorkin , Michael W. Phaneuf , Alexander Krechmer , Ken G. Lagarec
IPC分类号： G21G5/00 , G01N23/225 , H01J37/22 , H01L21/66 , G01R31/303
CPC分类号： G01N23/2255 , G01R31/303 , H01J37/222 , H01J2237/24564 , H01J2237/24585 , H01J2237/2803 , H01J2237/2809 , H01J2237/31749 , H01L22/12
摘要： Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.
摘要翻译：使用聚焦离子束成像技术在集成电路上跟踪电路的方法和系统。集成电路上的第一组件或节点耦合到同一集成电路上的第二组件或节点。在将外部偏压施加到第一部件或节点之后，将聚焦离子束施加到集成电路，并且使用电子检测器拍摄图像。耦合到第二组件或节点的集成电路上的特征或组件将在所得到的图像上呈现高对比度。该方法还可以包括向节点或部件施加偏压，然后使用聚焦离子束成像技术（通过电子检测器）来获得集成电路的图像。耦合到节点的组件将在所得到的图像中以高对比度出现。

4. 发明授权

US09235132B2 Large-mesh cell-projection electron-beam lithography method 有权
标题翻译：大网格细胞投影电子束光刻法
公开(公告)号：US09235132B2
公开(公告)日：2016-01-12
申请号：US13641125
申请日：2011-04-13
申请人： Serdar Manakli
发明人： Serdar Manakli
IPC分类号： G03B27/32 , G03B27/54 , G03C5/00 , G21G5/00 , H01J3/14 , G03F7/20 , B82Y10/00 , B82Y40/00 , H01J37/317
CPC分类号： G03F7/70091 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31776 , Y10S430/143
摘要： A lithography method based on the projection of cells, notably direct-write electron-beam lithography. One of the main limitations of the methods of this type in the prior art is the writing time. To overcome this limitation, according to the method of the invention, the size of the cells is increased to the maximum aperture of the lithography device. Advantageously, this size increase is obtained by modifying the size of the apertures of the projection stencil level closest to the substrate to be etched. Advantageously, a strip is added to the outside of the block to be etched onto which is radiated a dose calculated to optimize the process energy latitude. Advantageously, this strip is spaced apart from the edge of the block to be etched. Advantageously, the projected cells are not adjoining.
摘要翻译：基于电池投影的光刻方法，特别是直写式电子束光刻技术。在现有技术中这种类型的方法的主要限制之一是写入时间。为了克服这个限制，根据本发明的方法，电池的尺寸增加到光刻装置的最大孔径。有利地，通过改变最接近待蚀刻的基底的突起模板水平面的尺寸来获得这种尺寸增加。有利的是，将带材加到要蚀刻的块的外部，辐射剂量被计算以优化过程能量纬度。有利地，该条带与被蚀刻块的边缘间隔开。有利地，投影单元不相邻。

5. 发明授权

US09053907B2 System and method of ion neutralization with multiple-zoned plasma flood gun 有权
标题翻译：多区等离子喷枪离子中和的系统和方法
公开(公告)号：US09053907B2
公开(公告)日：2015-06-09
申请号：US13439124
申请日：2012-04-04
申请人： Chun-Lin Chang , Chih-Hong Hwang , Wen-Yu Ku , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Chun-Lin Chang , Chih-Hong Hwang , Wen-Yu Ku , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： A61N5/00 , G21G5/00 , H01J37/317 , G21K1/14
CPC分类号： H01J37/3171 , A61N5/00 , G21G5/00 , G21K1/14 , H01J2237/0044
摘要： An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.
摘要翻译：一种装置包括用于在使用离子束的离子注入的过程中中和半导体晶片上的正电荷累积的等离子体喷枪。等离子体喷枪包括两个以上的电弧室，其中每个电弧室被配置为在与半导体晶片相邻的相应区域中产生电子并将其释放到离子束中。

6. 发明授权

US08963337B2 Thin wafer support assembly 有权
标题翻译：薄晶片支撑组件
公开(公告)号：US08963337B2
公开(公告)日：2015-02-24
申请号：US12893355
申请日：2010-09-29
申请人： Arthur Paul Riaf
发明人： Arthur Paul Riaf
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/76 , H01L21/30 , H01L21/46 , H01L21/00 , H01L21/425 , B44C1/22 , C03C15/00 , C23F1/00 , B01D59/44 , H01J49/00 , A61N5/00 , G21G5/00 , G21K5/10 , H01J37/08 , H01L21/673 , H01L21/683
CPC分类号： H01L21/67346 , H01L21/6836
摘要： A semiconductor wafer assembly formed by bonding a support wafer to a thin wafer using a double-sided bonding release tape. The support wafer provides support for the thin target wafer such that existing handling tools can accommodate transporting and processing the assembly without compromising the profile of the thin target wafer.
摘要翻译：一种半导体晶片组件，其通过使用双面接合剥离胶带将支撑晶片接合到薄晶片而形成。支撑晶片为薄目标晶片提供支撑，使得现有的操作工具可以适应输送和处理组件，而不会影响薄目标晶片的轮廓。

7. 发明授权

US08835879B1 Reduction of deposition by separation of ion beam and neutral flow 有权
标题翻译：通过分离离子束和中性流减少沉积
公开(公告)号：US08835879B1
公开(公告)日：2014-09-16
申请号：US13908426
申请日：2013-06-03
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Frank Sinclair , Greg Citver , Timothy J. Miller
IPC分类号： A61N5/00 , G21G5/00 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/05
摘要： Ion implantation systems that separate the flow of ions from the flow of neutral particles are disclosed. The separation of neutral particles from ions can be achieved by manipulating the flow of ions in the system through variations in electrical or magnetic fields disposed within the implantation system. The path of neutral particles is less affected by electrical and magnetic fields than ions. The separation of these flows may also be accomplished by diverting the neutral particles from the ion beam, such as via an introduced gas flow or a flow blockage. Both separation techniques can be combined in some embodiments.
摘要翻译：公开了将离子流从中性粒子流分离的离子注入系统。中性粒子与离子的分离可以通过在植入系统内设置的电场或磁场的变化来操纵系统中的离子流来实现。中性粒子的路径比离子更少受电场和磁场的影响。这些流动的分离也可以通过将中性粒子从离子束转移，例如通过引入的气流或阻流来实现。在一些实施方案中，两种分离技术都可以组合。

8. 发明授权

US08796651B2 Method and apparatus for specimen fabrication 有权
标题翻译：用于样品制造的方法和装置
公开(公告)号：US08796651B2
公开(公告)日：2014-08-05
申请号：US12929396
申请日：2011-01-20
申请人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
发明人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
IPC分类号： G21G5/00
CPC分类号： G01N23/20 , B23K15/0006 , B23K15/0013 , G01N1/286 , H01J2237/3114 , H01J2237/31745
摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
摘要翻译：相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品通过转动样品台来控制切片。

9. 发明授权

US08791431B2 Drawing apparatus, and method of manufacturing article 有权
标题翻译：绘图装置及制作方法
公开(公告)号：US08791431B2
公开(公告)日：2014-07-29
申请号：US14106027
申请日：2013-12-13
申请人： Canon Kabushiki Kaisha
发明人： Ichiro Tanaka
IPC分类号： H01J37/305 , H01J37/08 , G21G5/00 , G21G7/00
CPC分类号： H01J37/3174 , H01J37/16 , H01J2237/006 , H01J2237/022 , H01J2237/182
摘要： The present invention provides a drawing apparatus for performing drawing on a substrate with a charged particle beam, the apparatus including a first member in which an aperture, through which the charged particle beam passes, is formed, a chamber including a first space and a second space which are partitioned by the first member, and a removing device including a first supply device configured to supply a first gas containing unsaturated hydrocarbon to the first space and a second supply device configured to supply a second gas containing ozone to the second space, and configured to remove contamination on the first member by active species generated by reaction of the first gas with the second gas.
摘要翻译：本发明提供了一种用于在带有带电粒子束的基板上进行拉伸的拉丝装置，该装置包括：第一部件，其中形成带电粒子束通过的孔，第一部件包括第一空间和第二部分由第一构件分隔开的空间，以及包括被配置为向第一空间供应含有不饱和烃的第一气体的第一供给装置的移除装置和被配置为向第二空间供给包含臭氧的第二气体的第二供给装置，以及被配置为通过所述第一气体与所述第二气体的反应产生的活性物质来除去所述第一构件上的污染物。

10. 发明授权

US08755924B2 Charged particle beam writing method and apparatus therefor 有权
标题翻译：带电粒子束写入方法及其装置
公开(公告)号：US08755924B2
公开(公告)日：2014-06-17
申请号：US12874722
申请日：2010-09-02
申请人： Akihito Anpo
发明人： Akihito Anpo
IPC分类号： G05B13/02 , G06F19/00 , G21G5/00 , G21K5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A charged particle beam writing method includes inputting layout information of a plurality of chips on which pattern formation is to be achieved, setting, using the layout information, a plurality of writing groups each being composed of at least one of the plurality of chips and each having writing conditions differing from each other, setting, for each of the plurality of writing groups, a frame which encloses a whole of all chip regions in the each of the plurality of writing groups, virtually dividing the frame into a plurality of stripe regions in a predetermined direction, with respect to the each of the plurality of writing groups, setting, using the plurality of stripe regions of all the plurality of writing groups, an order of each of the plurality of stripe regions such that a reference position of the each of the plurality of stripe regions is located in order in the predetermined direction regardless of the plurality of writing groups, and writing a pattern in the each of the plurality of stripe regions onto a target workpiece according to the order which has been set, by using a charged particle beam.
摘要翻译：带电粒子束写入方法包括输入要在其上实现图案形成的多个芯片的布局信息，使用布局信息设置多个写入组，每个写入组由多个芯片中的至少一个和每个芯片组成具有彼此不同的写入条件，对于所述多个写入组中的每一个设置包围所述多个写入组中的每一个的所有芯片区域的整体的帧，将所述帧实际上划分为多个条带区域相对于所述多个写入组中的每个写入组的预定方向，使用所述多个写入组中的所述多个条带区域设置所述多个条带区域中的每一个的顺序，使得每个多个条带区域中的多个条带区域按照预定方向依次排列，而与多个写入组无关，并且在每个写入组中写入图案根据已经通过使用带电粒子束设置的顺序将多个条带区域放置在目标工件上。

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