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71. 发明授权

US06893907B2 Fabrication of silicon-on-insulator structure using plasma immersion ion implantation 失效
标题翻译：使用等离子体浸没离子注入制造绝缘体上硅结构
公开(公告)号：US06893907B2
公开(公告)日：2005-05-17
申请号：US10786410
申请日：2004-02-24
申请人： Dan Maydan , Randir P. S. Thakur , Kenneth S. Collins , Amir Al-Bayati , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Dan Maydan , Randir P. S. Thakur , Kenneth S. Collins , Amir Al-Bayati , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/321 , H01J2237/0825 , Y10S438/977
摘要： A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.
摘要翻译：在半导体工件中制造具有硅表面层的绝缘体上硅结构的方法通过将工件保持在升高的温度下并在室中产生含氧等离子体，同时向工件施加偏压，将所述偏压设置为与待注入氧原子的硅表面层下方的所述工件中的植入深度相对应的水平，由此在所述工件中形成氧注入层，所述氧注入层通常以注入深度为中心并且在硅表面层中具有有限的氧浓度。然后减小硅表面层中的氧浓度以允许外延硅沉积。

72. 发明授权

US07695590B2 Chemical vapor deposition plasma reactor having plural ion shower grids 有权
标题翻译：具有多个离子淋浴网格的化学气相沉积等离子体反应器
公开(公告)号：US07695590B2
公开(公告)日：2010-04-13
申请号：US10873463
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： C23F1/00 , H01L21/306 , C23C16/505 , C23C16/48 , C23F1/12 , H01L21/3065 , C23C16/06
CPC分类号： H01J37/32449 , C23C14/358 , C23C16/045 , C23C16/507 , H01J37/32357
摘要： A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower reactor region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece support in the process region faces the lowermost one of the ion shower grids. A reactive species source furnishes into the ion generation region a chemical vapor deposition precursor species. The reactor further includes a vacuum pump coupled to the reactor region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the set of ion shower grids. The orifices through at least some of the ion shower grids have an aspect ratio sufficient to limit ion trajectories in the reactor region to a narrow angular range about the non-parallel direction, and a resistance to gas flow sufficient to support a pressure drop between the ion generation and reactor regions of about at least a factor of 4. The grid potential source can be capable of applying different voltages to different ones of the grids.
摘要翻译：一种用于加工半导体工件的等离子体反应器包括反应室和一组多个并联离子淋浴网格，其将腔室分成上部离子产生区域和下部反应器区域，每个离子淋浴器网格具有相互配准的多个孔口网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。工艺区域中的工件支撑面向最下面的离子淋浴网格。反应物种源向离子产生区域提供化学气相沉积前体物质。反应器还包括耦合到反应器区域的真空泵，用于在离子产生区域中产生等离子体的等离子体源功率施加器和耦合到该组离子淋浴栅格的栅极电位源。通过至少一些离子淋浴栅格的孔口具有足以将反应器区域中的离子轨迹限制在围绕非平行方向的窄角度范围的宽高比，以及足以支持压力降离子产生和反应器区域至少约为4倍。电网电势源能够对不同的电网施加不同的电压。

73. 发明授权

US07393765B2 Low temperature CVD process with selected stress of the CVD layer on CMOS devices 有权
标题翻译：低温CVD工艺，CMOS器件上CVD层的选择应力
公开(公告)号：US07393765B2
公开(公告)日：2008-07-01
申请号：US11788523
申请日：2007-04-19
申请人： Hiroji Hanawa , Kartik Ramaswamy , Kenneth S. Collins , Amir Al-Bayati , Biagio Gallo , Andrew Nguyen
发明人： Hiroji Hanawa , Kartik Ramaswamy , Kenneth S. Collins , Amir Al-Bayati , Biagio Gallo , Andrew Nguyen
IPC分类号： H01L21/44 , H01L21/425
CPC分类号： H01L21/02274 , C23C14/48 , C23C16/507 , H01J37/321 , H01J37/32174 , H01J37/32357 , H01J37/32412 , H01J2237/2001 , H01L21/02126 , H01L21/2236 , H01L21/26513 , H01L21/2658 , H01L21/31604 , H01L21/318 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/6659 , Y10T29/5313
摘要： Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the other set, and after each step of successively masking one of the sets of devices, carrying out low temperature CVD steps with a toroidal RF plasma current while applying an RF plasma bias voltage. The temperature of the workpiece is held below a threshold photoresist removal temperature. The RF bias voltage is held at a level at which the coating is deposited with a first stress when the unmasked set consists of the P-channel devices and with a second stress when the unmasked set consists of N-channel devices.
摘要翻译：通过在每个N沟道和P沟道器件组中的每一个上对光阻单元进行连续掩蔽，同时在CMOS器件上沉积器件增强涂层，同时对另一个器件进行掩蔽或者脱离另一个器件，并且在每个步骤连续地掩蔽器件组中的一个器件在施加RF等离子体偏压的同时，用环形RF等离子体电流进行低温CVD步骤。工件的温度保持在阈值光刻胶去除温度以下。当未屏蔽组由P沟道器件组成并且当未屏蔽组由N沟道器件组成时，RF偏置电压保持在第一应力下沉积涂层的水平。

74. 发明授权

US07288491B2 Plasma immersion ion implantation process 有权
标题翻译：等离子体浸没离子注入工艺
公开(公告)号：US07288491B2
公开(公告)日：2007-10-30
申请号：US11046562
申请日：2005-01-28
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
IPC分类号： H01L21/469 , H01L21/31 , B08B3/12 , B08B6/00 , B08B7/00 , B08B7/02
CPC分类号： H01J37/32082 , H01J37/321 , H01L21/67109 , H01L21/6831
摘要： One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.
摘要翻译：在等离子体反应器室中的工件上进行等离子体浸没离子注入的一种方法包括：在工件被引入之前，首先在等离子体反应器室的内表面上沉积调味膜，通过将调味膜前体气体引入室中，在室内的等离子体，通过将注入种类前体气体引入到腔室中并产生等离子体，然后从腔室中移出工件并从室内表面除去调味膜，从而在工件上进行等离子体浸没离子注入。

75. 发明授权

US07244474B2 Chemical vapor deposition plasma process using an ion shower grid 有权
标题翻译：使用离子淋浴网格的化学气相沉积等离子体工艺
公开(公告)号：US07244474B2
公开(公告)日：2007-07-17
申请号：US10873485
申请日：2004-06-22
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H05H1/03 , H05H1/46 , C23C16/30 , C23C16/34 , C23C16/40
CPC分类号： C23C16/452 , C23C16/402 , C23C16/517
摘要： A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.
摘要翻译：在具有离子喷淋网格的反应室中进行化学气相沉积工艺，该离子喷淋网格将室分成上部离子产生区域和下部工艺区域，离子喷淋格栅具有相对于一个非平行方向取向的多个孔口离子淋浴网格的表面。工件放置在面向离子喷淋格栅的工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。配备气体混合物，其包括沉积前体物质进入离子产生区域，并且处理区域以足以在从离子产生区域到过程区域的离子喷淋网格上产生压降的抽空速率抽真空，由此离子中的压力发生区域至少是过程区域压力的几倍。通过以下步骤沉积所需厚度的一层材料：（a）施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，和（b）将栅格电位施加到离子喷淋栅格以从等离子体中产生离子通过网格并进入过程区域。

76. 发明授权

US08900405B2 Plasma immersion ion implantation reactor with extended cathode process ring 有权
标题翻译：具有扩展阴极工艺环的等离子体浸没离子注入反应器
公开(公告)号：US08900405B2
公开(公告)日：2014-12-02
申请号：US11985579
申请日：2007-11-14
申请人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
发明人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32412
摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
摘要翻译：本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

77. 发明申请

US20090120367A1 Plasma immersion ion implantation reactor with extended cathode process ring 有权
标题翻译：具有扩展阴极工艺环的等离子体浸没离子注入反应器
公开(公告)号：US20090120367A1
公开(公告)日：2009-05-14
申请号：US11985579
申请日：2007-11-14
申请人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
发明人： Peter I. Porshnev , Majeed A. Foad , Kartik Ramaswamy , Biagio Gallo , Hiroji Hanawa , Andrew Nguyen , Kenneth S. Collins , Amir Al-Bayati
IPC分类号： C23C16/513
CPC分类号： H01J37/32642 , H01J37/32412
摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.
摘要翻译：本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

78. 发明授权

US07429532B2 Semiconductor substrate process using an optically writable carbon-containing mask 有权
标题翻译：使用可光学写入的含碳掩模的半导体衬底工艺
公开(公告)号：US07429532B2
公开(公告)日：2008-09-30
申请号：US11199592
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/302
CPC分类号： H01L21/0332 , G03F1/54 , G03F1/68 , G03F7/202 , H01L21/3081 , H01L21/3086
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.
摘要翻译：一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层（a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光具有与书写光不同的特征。

79. 发明授权

US07335611B2 Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer 有权
标题翻译：铜导体退火工艺采用低温沉积光吸收层进行高速光学退火
公开(公告)号：US07335611B2
公开(公告)日：2008-02-26
申请号：US11199572
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/4763 , H01L21/00
CPC分类号： B23K26/0738 , B23K26/0608 , B23K26/0876 , B23K26/361 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76886
摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.
摘要翻译：在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

80. 发明授权

US07312162B2 Low temperature plasma deposition process for carbon layer deposition 失效
标题翻译：用于碳层沉积的低温等离子体沉积工艺
公开(公告)号：US07312162B2
公开(公告)日：2007-12-25
申请号：US11131941
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/31
CPC分类号： C23C16/26 , C23C16/505 , C23C16/52 , H01L21/268 , H01L21/3146
摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.
摘要翻译：在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳工艺气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

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