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1. 发明授权

US09685186B2 HDD pattern implant system 有权
公开(公告)号：US09685186B2
公开(公告)日：2017-06-20
申请号：US12703897
申请日：2010-02-11
申请人： Majeed A. Foad , Jacob Newman , Jose Antonio Marin , Daniel J. Hoffman , Stephen Moffatt , Steven Verhaverbeke
发明人： Majeed A. Foad , Jacob Newman , Jose Antonio Marin , Daniel J. Hoffman , Stephen Moffatt , Steven Verhaverbeke
IPC分类号： G11B5/85 , C23C16/00 , G11B5/82 , C23F1/00 , H01L21/673 , G11B5/84 , H01L21/677 , G11B5/855 , C23C14/48 , H01L21/687 , C23C14/50
CPC分类号： G11B5/82 , C23C14/48 , C23C14/50 , C23C16/00 , C23F1/00 , G11B5/84 , G11B5/855 , H01L21/673 , H01L21/677 , H01L21/687
摘要： Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

2. 发明授权

US08354035B2 Method for removing implanted photo resist from hard disk drive substrates 有权
标题翻译：从硬盘驱动器基板上去除植入光刻胶的方法
公开(公告)号：US08354035B2
公开(公告)日：2013-01-15
申请号：US12821400
申请日：2010-06-23
申请人： Martin A. Hilkene , Majeed A. Foad , Matthew D. Scotney-Castle , Roman Gouk , Steven Verhaverbeke , Peter I. Porshnev
发明人： Martin A. Hilkene , Majeed A. Foad , Matthew D. Scotney-Castle , Roman Gouk , Steven Verhaverbeke , Peter I. Porshnev
IPC分类号： B44C1/22
CPC分类号： G11B5/84 , G03F7/427
摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.
摘要翻译：提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。还可以包括清洁剂。衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

3. 发明申请

US20110256691A1 REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 审中-公开
标题翻译：从基板上去除表面掺杂物
公开(公告)号：US20110256691A1
公开(公告)日：2011-10-20
申请号：US13168738
申请日：2011-06-24
申请人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
发明人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
IPC分类号： H01L21/322
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

4. 发明授权

US07977199B2 Method for measuring dopant concentration during plasma ion implantation 有权
标题翻译：在等离子体离子注入期间测量掺杂剂浓度的方法
公开(公告)号：US07977199B2
公开(公告)日：2011-07-12
申请号：US12777085
申请日：2010-05-10
申请人： Majeed A. Foad , Shijian Li
发明人： Majeed A. Foad , Shijian Li
IPC分类号： H01L21/00
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.
摘要翻译：本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收通过位于基板下方的传感器进行光照射。该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

5. 发明申请

US20110006034A1 METHOD FOR REMOVING IMPLANTED PHOTO RESIST FROM HARD DISK DRIVE SUBSTRATES 有权
标题翻译：从硬盘驱动器基板移除嵌入式照相器的方法
公开(公告)号：US20110006034A1
公开(公告)日：2011-01-13
申请号：US12821400
申请日：2010-06-23
申请人： Martin A. Hilkene , Majeed A. Foad , Matthew D. Scotney-Castle , Roman Gouk , Steven Verhaverbeke , Peter I. Porshnev
发明人： Martin A. Hilkene , Majeed A. Foad , Matthew D. Scotney-Castle , Roman Gouk , Steven Verhaverbeke , Peter I. Porshnev
IPC分类号： G11B5/84
CPC分类号： G11B5/84 , G03F7/427
摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.
摘要翻译：提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。还可以包括清洁剂。衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

6. 发明申请

US20100313951A1 CARBON NANOTUBE-BASED SOLAR CELLS 有权
标题翻译：基于碳纳米管的太阳能电池
公开(公告)号：US20100313951A1
公开(公告)日：2010-12-16
申请号：US12797529
申请日：2010-06-09
申请人： Omkaram Nalamasu , Charles Gay , Victor L. Pushparaj , Kaushal K. Singh , Robert J. Visser , Majeed A. Foad , Ralf Hofmann
发明人： Omkaram Nalamasu , Charles Gay , Victor L. Pushparaj , Kaushal K. Singh , Robert J. Visser , Majeed A. Foad , Ralf Hofmann
IPC分类号： H01L31/04 , H01L31/18 , C23C16/22
CPC分类号： H01L31/022425 , B82Y10/00 , H01L31/0322 , H01L31/03529 , H01L31/0384 , H01L31/0749 , H01L51/0048 , H01L51/4213 , Y02E10/541 , Y02P70/521
摘要： Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate. The photoactive solar cell layer may be comprised of amorphous silicon p/i/n thin films; although, concepts of the present invention are also applicable to solar cells with absorber layers of microcrystalline silicon, SiGe, carbon doped microcrystalline silicon, CIS, CIGS, CISSe and various p-type II-VI binary compounds and ternary and quaternary compounds.
摘要翻译：太阳能电池提供有碳纳米管（CNT），其用于限定太阳能电池的微米/亚微米几何形状; 和/或作为电荷转运体，用于从吸收层有效去除电荷载体以降低吸收层中电子 - 空穴复合的速率。太阳能电池可以包括：基底; 在基材表面上的金属催化剂的多个区域; 形成在金属催化剂的多个区域上的多个碳纳米管束，每个束包括大致垂直于基板的表面排列的碳纳米管; 以及形成在所述碳纳米管束和所述基板的露出表面上的光活性太阳能电池层，其中所述光电太阳能电池层在所述碳纳米管束和所述基板的暴露表面上连续。光电太阳能电池层可以由非晶硅p / i / n薄膜组成; 尽管本发明的概念也适用于具有微晶硅，SiGe，碳掺杂微晶硅，CIS，CIGS，CISSe和各种p型II-VI二元化合物和三元和四元化合物的吸收层的太阳能电池。

7. 发明授权

US07732309B2 Plasma immersed ion implantation process 有权
标题翻译：等离子体浸入式离子注入工艺
公开(公告)号：US07732309B2
公开(公告)日：2010-06-08
申请号：US11608357
申请日：2006-12-08
申请人： Shijian Li , Kartik Ramaswamy , Biagio Gallo , Dong Hyung Lee , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Biagio Gallo , Dong Hyung Lee , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子混合物进入底物。在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到腔室中，以及将离子从气体混合物注入到衬底中。

8. 发明授权

US07713757B2 Method for measuring dopant concentration during plasma ion implantation 有权
标题翻译：在等离子体离子注入期间测量掺杂剂浓度的方法
公开(公告)号：US07713757B2
公开(公告)日：2010-05-11
申请号：US12049047
申请日：2008-03-14
申请人： Majeed A. Foad , Shijian Li
发明人： Majeed A. Foad , Shijian Li
IPC分类号： H01L21/66 , C23F1/08 , C23C16/44
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.
摘要翻译：本发明的实施方案通常提供了在等离子体掺杂过程期间以预定掺杂剂浓度进行终点检测的方法。在一个实施例中，一种方法包括将衬底定位在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透射穿过衬底，其中光进入顶侧并离开衬底的背面，并接收通过位于基板下方的传感器进行光照射。该方法进一步提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，在掺杂过程期间产生与传感器接收的减少量的光成比例的多个光信号，产生一旦衬底具有最终的掺杂剂浓度，终点信号与传感器接收的光成比例，并停止掺杂过程。

9. 发明授权

US07659184B2 Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking 失效
标题翻译：等离子体浸没离子注入工艺与室内调料和调味料层等离子体放电用于晶圆脱扣
公开(公告)号：US07659184B2
公开(公告)日：2010-02-09
申请号：US12072495
申请日：2008-02-25
申请人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
发明人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/20
CPC分类号： H01J37/32477 , H01J37/32412 , H01J2237/0213 , H01J2237/022 , H01J2237/16
摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.
摘要翻译：在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

10. 发明申请

US20090280628A1 PLASMA IMMERSION ION IMPLANTATION PROCESS WITH CHAMBER SEASONING AND SEASONING LAYER PLASMA DISCHARGING FOR WAFER DECHUCKING 有权
标题翻译：等离子体浸入式离子植入工艺，具有室温季节和分散层等离子体放电
公开(公告)号：US20090280628A1
公开(公告)日：2009-11-12
申请号：US12503697
申请日：2009-07-15
申请人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
发明人： Manoj Vellaikal , Kartik Santhanam , Yen B. Ta , Martin A. Hilkene , Matthew D. Scotney-Castle , Canfeng Lai , Peter I. Porshnev , Majeed A. Foad
IPC分类号： H01L21/26
CPC分类号： H01J37/32477 , H01J37/32412 , H01J2237/0213 , H01J2237/022 , H01J2237/16
摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.
摘要翻译：在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

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