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71. 发明申请

US20100258836A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100258836A1
公开(公告)日：2010-10-14
申请号：US12652329
申请日：2010-01-05
申请人： TAI CHUN WANG , WEI CHIH WEN
发明人： TAI CHUN WANG , WEI CHIH WEN
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L27/153 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting device includes a substrate; a stacked structure including a first type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first type semiconductor layer, and a second type semiconductor layer positioned on the light-emitting structure, wherein the stacked structure includes a depression exposing the first type semiconductor layer; a first electrode positioned on the first type semiconductor layer in the depression, the first electrode including at least one first pad and at least one first extending wire with one end connected to the first pad; a second electrode positioned on the second type semiconductor layer, the second electrode including at least one second pad and at least one second extending wire with one end connected to the second pad; wherein the distance between the first pad and the second pad is greater than 70% of the width of the light-emitting device.
摘要翻译：发光装置包括：基板; 包括位于所述基板上的第一类型半导体层，位于所述第一类型半导体层上的发光结构和位于所述发光结构上的第二类型半导体层的堆叠结构，其中，所述堆叠结构包括：第一类半导体层; 第一电极，位于凹陷中的第一类型半导体层上，第一电极包括至少一个第一焊盘和至少一个第一延伸焊丝，其一端连接到第一焊盘; 位于所述第二类型半导体层上的第二电极，所述第二电极包括至少一个第二焊盘和至少一个第二延伸焊丝，其一端连接到所述第二焊盘; 其中所述第一焊盘和所述第二焊盘之间的距离大于所述发光装置的宽度的70％。

72. 发明授权

US07737453B2 Light emitting diode structure 有权
标题翻译：发光二极管结构
公开(公告)号：US07737453B2
公开(公告)日：2010-06-15
申请号：US11744226
申请日：2007-05-04
申请人： Tzong-Liang Tsai , Chi-Shen Lee , Ting-Kai Huang
发明人： Tzong-Liang Tsai , Chi-Shen Lee , Ting-Kai Huang
IPC分类号： H01L29/205
CPC分类号： H01L33/14 , H01L29/2003 , H01L33/02 , H01L33/32
摘要： Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an upper confinement layer formed on the light emitting layer, a Constructive Oxide Contact Structure contact layer formed on the upper confinement layer whose conducting type can be P-type, N-type, or I-type, a first electrode, and a second electrode (transparent electrode). The transparent electrode is formed on the Constructive Oxide Contact Structure contact layer as an anode of the light emitting diode. The first electrode is formed on the lower confinement layer and is spaced apart from the light emitting layer, the upper confinement layer, the contact layer, and the transparent electrode. The first electrode is used as a cathode of the light emitting diode.
摘要翻译：公开了包括构造氧化物接触结构接触层的发光二极管结构。发光二极管结构包括衬底，形成在衬底上的缓冲层，形成在缓冲层上的下限制层，形成在下限制层上的发光层，形成在发光层上的上约束层，形成在导电型可以是P型，N型或I型的上部限制层上的构造性氧化物接触结构接触层，第一电极和第二电极（透明电极）。透明电极形成在作为发光二极管的阳极的构造氧化物接触结构接触层上。第一电极形成在下限制层上并与发光层，上约束层，接触层和透明电极间隔开。第一电极用作发光二极管的阴极。

73. 发明申请

US20100101496A1 WAFER CARRIER AND EPITAXY MACHINE USING THE SAME 审中-公开
标题翻译：使用它的波浪载体和外延机
公开(公告)号：US20100101496A1
公开(公告)日：2010-04-29
申请号：US12648849
申请日：2009-12-29
申请人： CHIH CHING CHENG , TZONG-LIANG TSAI
发明人： CHIH CHING CHENG , TZONG-LIANG TSAI
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C30B25/12
摘要： A wafer carrier comprises a base and a shielding plate positioned on the top surface of the base in a disassembled manner. The top surface of the base is configured to retain a plurality of wafers, and the shielding plate has a plurality of openings exposing the wafers. In particular, the shielding plate shields one portion of the base other than the other portions occupied by the wafers to prevent the reaction gases from conducting the chemical reaction to generate the reactant directly on the surface of the base. Consequently, the base is isolated from the chemical reaction, and it is not necessary to replace the base before conducting the next fabrication process or to clean the reactants on the surface of the base by thermal baking or etching.
摘要翻译：晶片载体包括基部和屏蔽板，其以拆卸的方式定位在基部的顶表面上。基座的顶表面构造成保持多个晶片，并且屏蔽板具有暴露晶片的多个开口。特别地，屏蔽板屏蔽除了晶片占据的其它部分之外的基底的一部分，以防止反应气体进行化学反应，直接在基底的表面上产生反应物。因此，基底与化学反应隔离，在进行下一个制造工艺之前不需要更换基底，也不需要通过热烘烤或蚀刻来清洁基底表面上的反应物。

74. 发明申请

US20100025705A1 HIGH EFFICIENCY LIGHTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：高效照明设备及其制造方法
公开(公告)号：US20100025705A1
公开(公告)日：2010-02-04
申请号：US12182289
申请日：2008-07-30
申请人： Wei-Kai Wang , Su-Hui Lin , Wen-Chung Shih
发明人： Wei-Kai Wang , Su-Hui Lin , Wen-Chung Shih
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/22 , H01L2933/0016
摘要： A high efficiency luminous device and a manufacturing method thereof are disclosed. The high efficiency luminous device includes a LED structure, a first metal electrode, and a second metal electrode. The LED structure is for emitting light. The first metal electrode is formed on the LED structure, and the first metal electrode has a plurality of first openings therein. The second metal electrode is formed on the LED structure, and the second metal electrode has a plurality of second openings therein. The plurality of first openings and the plurality of second openings allow the light emitted from the LED structure to pass therethrough.
摘要翻译：公开了一种高效率发光装置及其制造方法。高效率发光器件包括LED结构，第一金属电极和第二金属电极。 LED结构用于发光。第一金属电极形成在LED结构上，第一金属电极在其中具有多个第一开口。第二金属电极形成在LED结构上，第二金属电极在其中具有多个第二开口。多个第一开口和多个第二开口允许从LED结构发射的光通过。

75. 发明申请

US20100006862A1 Substrate for fabricating light emitting device and light emitting device fabricated therefrom 审中-公开
标题翻译：用于制造发光器件的基板和由其制造的发光器件
公开(公告)号：US20100006862A1
公开(公告)日：2010-01-14
申请号：US12453409
申请日：2009-05-11
申请人： Chih-Ching Cheng
发明人： Chih-Ching Cheng
IPC分类号： H01L33/00 , B32B3/00
CPC分类号： H01L33/22 , H01L33/16 , Y10T428/24479
摘要： The invention provides a substrate for fabricating a light emitting device and the light emitting device fabricated therefrom. The substrate includes at least one platform region having a first facet direction for epitaxial growth; and a plurality of continuous protruded portions surrounding the at least one platform region to isolate the at least one platform region from another platform region, wherein the first facet direction is substantially excluded from facet directions of the plurality of continuous protruded portions. Since facet directions of the plurality of continuous protruded portions substantially do not include the first facet direction, during formation of the light emitting device, epitaxial growth is mainly conducted on the at least one platform region, which may prevent epitaxial defects from generating and enhance external quantum efficiency of the light emitting device.
摘要翻译：本发明提供一种用于制造发光器件的衬底和由其制造的发光器件。衬底包括具有用于外延生长的第一小面方向的至少一个平台区域; 以及围绕所述至少一个平台区域的多个连续突出部分，以将所述至少一个平台区域与另一个平台区域隔离，其中所述第一小面方向基本上从所述多个连续突出部分的小平面方向排除。由于多个连续突出部分的面方向基本上不包括第一小面方向，所以在形成发光器件期间，外延生长主要在至少一个平台区域上进行，这可以防止外延缺陷产生和增强外部发光器件的量子效率。

76. 发明申请

US20090224275A1 LIGHT EMITTING DIODE AND METHOD 有权
标题翻译：发光二极管和方法
公开(公告)号：US20090224275A1
公开(公告)日：2009-09-10
申请号：US12329816
申请日：2008-12-08
申请人： Hsuan-Tang Chan
发明人： Hsuan-Tang Chan
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second substrate holding the epitaxy chip; an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip; a first electrode on the first portion of the isolation layer; and a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connect to the first conductive semiconductor layer and the second conductive semiconductor layer.
摘要翻译：提供一种发光二极管及其形成方法。发光二极管包括在第一衬底上具有第一衬底，第一导电半导体层，发光层和第二导电半导体层的外延芯片; 保持所述外延芯片的第二基板; 在所述第二基板上的隔离层，所述隔离层具有连接到所述外延芯片的一侧的第一部分和连接到所述外延芯片的另一侧的第二部分; 在隔离层的第一部分上的第一电极; 以及在隔离层的第二部分上的第二电极，其中第一电极和第二电极分别电连接到第一导电半导体层和第二导电半导体层。

77. 发明申请

US20090008657A1 Semiconductor light-emitting device with low-density defects and method of fabricating the same 审中-公开
标题翻译：具有低密度缺陷的半导体发光器件及其制造方法
公开(公告)号：US20090008657A1
公开(公告)日：2009-01-08
申请号：US11987646
申请日：2007-12-03
申请人： Wei-Kai Wang
发明人： Wei-Kai Wang
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/12
摘要： A semiconductor light-emitting device and a method of fabricating the same are provided. The semiconductor light-emitting device includes a substrate, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of first recesses formed in the first upper surface. The multi-layer structure is formed on the first upper surface of the substrate and includes a light-emitting region. A bottom-most layer of the multi-layer structure is formed on the first upper surface of the substrate. The bottom-most layer has a second upper surface and a plurality of second recesses formed in the second upper surface. The second recesses project on the first upper surface. The ohmic electrode structure is formed on the multi-layer structure.
摘要翻译：提供一种半导体发光器件及其制造方法。半导体发光器件包括衬底，多层结构和欧姆电极结构。基板具有形成在第一上表面中的第一上表面和多个第一凹槽。多层结构形成在基板的第一上表面上并且包括发光区域。多层结构的最底层形成在基板的第一上表面上。最底层具有形成在第二上表面中的第二上表面和多个第二凹槽。第二个凹槽在第一个上表面上投影。欧姆电极结构形成在多层结构上。

78. 发明申请

US20090008626A1 Optoelectronic device 审中-公开
标题翻译：光电器件
公开(公告)号：US20090008626A1
公开(公告)日：2009-01-08
申请号：US12000610
申请日：2007-12-14
申请人： Tzong-Liang Tsai , Yu-Chu Li
发明人： Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L29/06 , H01L33/00
CPC分类号： H01L33/24 , H01L33/007 , H01L33/02 , H01L33/26
摘要： The present invention provides an optoelectronic device which includes a first electrode, a substrate on the first electrode; a buffer layer on the substrate, in which the buffer layer includes a first gallium nitride based compound layer on the substrate, a second gallium nitride based compound layer, and a II-V group compound layer between the first gallium nitride based compound layer and the second gallium nitride based compound layer; a first semiconductor conductive layer on the buffer layer; an active layer on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a semiconductor conductive layer on the active layer; a transparent layer on the second semiconductor conductive layer; and a second electrode on the transparent layer.
摘要翻译：本发明提供一种光电器件，其包括第一电极，第一电极上的衬底; 所述衬底上的缓冲层，其中所述缓冲层在所述衬底上包括第一氮化镓基化合物层，所述第二氮化镓基化合物层和所述第一氮化镓基化合物层和所述第一氮化镓基化合物层之间的II-V族化合物层第二氮化镓基化合物层; 在缓冲层上的第一半导体导电层; 在第一半导体导电层上的有源层，其中有源层是不均匀的多量子阱; 有源层上的半导体导电层; 第二半导体层上的透明层; 和透明层上的第二电极。

79. 发明申请

US20080277686A1 Light emitting device and method for making the same 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20080277686A1
公开(公告)日：2008-11-13
申请号：US11801201
申请日：2007-05-08
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/22
摘要： A light emitting diode includes: an epitaxial substrate having a roughened side and formed with alternately disposed ridges and valleys at the roughened side, each of the ridges having a roughened surface that is formed with a dense concentration of alternately disposed pits and protrusions; and an epitaxial layered structure formed on and covering the ridges and the valleys of the epitaxial substrate. A method for making the light emitting diode involves forming the epitaxial substrate with the ridges and valleys prior to the formation of the epitaxial layered structure.
摘要翻译：发光二极管包括：具有粗糙面的外延基板，并且在粗糙化侧形成有交替设置的脊和谷，每个脊具有粗糙表面，其形成为具有交替设置的凹坑和突起的致密集中; 以及外延层叠结构，形成在外延基板的脊部和谷部上。制造发光二极管的方法包括在形成外延层状结构之前，用脊和谷形成外延衬底。

80. 发明申请

US20080258163A1 Semiconductor light-emitting device with high light-extraction efficiency 有权
标题翻译：半导体发光器件具有较高的光提取效率
公开(公告)号：US20080258163A1
公开(公告)日：2008-10-23
申请号：US12081595
申请日：2008-04-17
申请人： Wei-Kai Wang , Su-Hui Lin , Wen-Chung Shih
发明人： Wei-Kai Wang , Su-Hui Lin , Wen-Chung Shih
IPC分类号： H01L33/00 , H01L21/302
CPC分类号： H01L33/20 , H01L33/22
摘要： The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light-extraction area of the sidewall, and consequently enhances the light-extraction efficiency of the semiconductor light-emitting device.
摘要翻译：本发明公开了一种半导体发光器件及其制造方法。根据本发明的半导体发光器件包括衬底，多层结构，最顶层和至少一个电极。多层结构形成在基板上并且包括发光区域。最顶层形成在多层结构上，最顶层的侧壁的下部表现出相对于第一图案的第一表面形态。此外，最顶层的侧壁的上部相对于第二图案显示出第二表面形态。至少一个电极形成在最上层。因此，根据本发明的半导体发光器件的侧壁呈现表面形态，这增加了侧壁的光提取面积，从而提高了半导体发光器件的光提取效率。

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