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71. 发明授权

US09725807B2 Nano imprinting with reusable polymer template with metallic or oxide coating 有权
公开(公告)号：US09725807B2
公开(公告)日：2017-08-08
申请号：US14922953
申请日：2015-10-26
申请人： Canon Nanotechnologies, Inc. , Molecular Imprints, Inc.
发明人： Se Hyun Ahn , Byung-Jin Choi , Frank Y. Xu
IPC分类号： G03G7/00 , C23C16/513 , G03F7/00 , B82Y10/00 , B82Y40/00 , B41C1/10 , C23C16/40 , C23C16/48 , B29C59/04 , B29C59/14
摘要： Methods and systems are provided for fabricating polymer-based imprint lithography templates having thin metallic or oxide coated patterning surfaces. Such templates show enhanced fluid spreading and filling (even in absence of purging gases), good release properties, and longevity of use. Methods and systems for fabricating oxide coated versions, in particular, can be performed under atmospheric pressure conditions, allowing for lower cost processing and enhanced throughput.

72. 发明申请

US20170221735A1 Thermal Reflector Device for Semiconductor Fabrication Tool 审中-公开
公开(公告)号：US20170221735A1
公开(公告)日：2017-08-03
申请号：US15287434
申请日：2016-10-06
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Shih-Wei Hung
IPC分类号： H01L21/67 , C23C16/48 , C23C16/46
CPC分类号： H01L21/67115 , C23C16/46 , C23C16/481
摘要： A system and apparatus for thermal treatment of a substrate with improved thermal uniformity is provided. In some embodiments, the system includes a heating element, a substrate-retaining element operable to retain a substrate, and a reflective structure operable to direct thermal energy of the heating element towards the substrate retained in the substrate-retaining element. The reflective structure includes a textured portion wherein a texture of the textured portion is configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a roughened irregular surface configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a plurality of circumferential ridge structures configured to direct the thermal energy towards the retained substrate.

73. 发明授权

US09689071B2 Graphene-coated steel sheet, and method for manufacturing same 有权
公开(公告)号：US09689071B2
公开(公告)日：2017-06-27
申请号：US13824591
申请日：2011-11-09
申请人： Chan Cuk Hwang , Yong Gyun Jung , Han Na Hwang , Jae In Jeong , Ji Hoon Yang
发明人： Chan Cuk Hwang , Yong Gyun Jung , Han Na Hwang , Jae In Jeong , Ji Hoon Yang
IPC分类号： B32B9/00 , C23C16/26 , C21D1/72 , C21D8/02 , C21D8/04 , C21D1/68 , C21D3/04 , C23C16/48 , C23C8/22 , C23C14/02 , C23C16/02 , C01B31/04 , B82Y30/00 , B82Y40/00 , C23C14/06
CPC分类号： C23C16/26 , B82Y30/00 , B82Y40/00 , C01B32/186 , C21D1/68 , C21D1/72 , C21D3/04 , C21D8/0284 , C21D8/0484 , C23C8/22 , C23C14/022 , C23C14/0605 , C23C16/02 , C23C16/487 , Y10T428/30 , Y10T428/31678
摘要： A graphene-coated steel sheet and a method for manufacturing the same are provided. The graphene-coated steel sheet includes a steel sheet and a graphene layer formed on the steel sheet. Therefore, the graphene-coated steel sheet can be useful in preventing corrosion of iron, such as oxidation of iron, and has remarkably excellent thermal conductivity and electrical conductivity, as well as excellent heat resistance resulting from thermal stability of graphene. Also, the method can be useful in manufacturing a high-quality graphene-coated steel sheet having a monocrystalline form and showing substantially no defects or impurities.

74. 发明授权

US09679779B2 Systems and methods for depositing materials on either side of a freestanding film using selective thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same 有权
公开(公告)号：US09679779B2
公开(公告)日：2017-06-13
申请号：US13797549
申请日：2013-03-12
申请人： The Aerospace Corporation
发明人： David P. Taylor , Margaret H. Abraham
IPC分类号： H01L21/285 , B81C1/00 , C23C16/01 , C23C16/18 , C23C16/48 , H01L21/3065 , C23C16/04 , C23C16/46 , H01L27/13 , H01L49/02 , G01J5/02 , G02B5/28
CPC分类号： H01L21/28506 , B81B2203/0109 , B81C1/00373 , B81C2201/0176 , B81C2201/0188 , C23C16/01 , C23C16/04 , C23C16/18 , C23C16/46 , C23C16/481 , C23C16/483 , G01J5/024 , G02B5/285 , H01L21/3065 , H01L27/13 , H01L28/40 , H01L28/87
摘要： Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to heat. The freestanding film is then selectively heated in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.

75. 发明授权

US09651369B1 Method and system for in-situ determination of a chemical composition of films during growth process 有权
公开(公告)号：US09651369B1
公开(公告)日：2017-05-16
申请号：US15165519
申请日：2016-05-26
申请人： NEOCERA, LLC
发明人： Mikhail Strikovski , Jeonggoo Kim , Solomon Kolagani , Steven L. Garrahan
IPC分类号： G01B15/02 , G01N23/225 , C23C16/48
CPC分类号： G01B15/02 , C23C14/28 , C23C14/548 , C23C16/484 , G01N23/2252
摘要： System and method for determining the composition of deposited thin films by acquiring multiple sequential X-ray spectra for a film of interest during the deposition process as the film thickness increases, computing intensities of peaks found in the X-ray spectra corresponding to elements present in the film material, followed by computing, for each pair of elements, ratios of corresponding peak intensities, graphing the intensities and ratios against a parameter correlated to the film thickness, and applying a physically meaningful function to the graphed data for best fitting the data down to a ratio RA/B(0) for each pair of the elements for a virtual film of zero thickness. Elemental concentrations ratio for each pair of elements is subsequently computed as a product of RA/B(0) and a factor which is specific for the pair of elements, constant for the instrument as set up, and independent of elements concentrations, and of film thickness.

76. 发明授权

US09643844B2 Low temperature atomic layer deposition of films comprising SiCN or SiCON 有权
公开(公告)号：US09643844B2
公开(公告)日：2017-05-09
申请号：US14771697
申请日：2014-02-28
申请人： Applied Materials, Inc.
发明人： David Thompson
IPC分类号： C23C16/36 , C23C16/48 , C23C16/455 , C01B21/082 , C23C16/30
CPC分类号： C01B21/0828 , C23C16/308 , C23C16/36 , C23C16/45525 , C23C16/45553 , C23C16/48
摘要： Provided are methods for the deposition of films comprising SiCN and SiCON. Certain methods involve exposing a substrate surface to a first and second precursor, the first precursor having a formula (XyH3-ySi)zCH4-z, (XyH3-ySi)(CH2)(SiXpH2-p)(CH2)(SiXyH3-y), or (XyH3-ySi)(CH2)n(SiXyH3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5, and the second precursor comprising a reducing amine. Certain methods also comprise exposure of the substrate surface to an oxygen source to provide a film comprising SiCON.

77. 发明授权

US09598768B2 Method of forming zinc oxide film (ZnO) or magnesium zinc oxide film (ZnMgO) and apparatus for forming zinc oxide film or magnesium zinc oxide film 有权
公开(公告)号：US09598768B2
公开(公告)日：2017-03-21
申请号：US13059356
申请日：2008-09-24
申请人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Masahisa Kogura
发明人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Masahisa Kogura
IPC分类号： C23C16/448 , C23C16/40 , C23C16/48 , C23C18/12 , H01L21/02 , C23C16/452 , C23C16/455
CPC分类号： C23C16/4486 , C23C16/407 , C23C16/452 , C23C16/45523 , C23C16/482 , C23C18/12 , C23C18/1216 , C23C18/1279 , C23C18/1291 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02628
摘要： A method of forming a zinc oxide film or a magnesium zinc oxide film which has a high transmittance. The method of forming a zinc oxide film or a magnesium zinc oxide film includes (A) converting a solution containing zinc, or zinc and magnesium into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.

78. 发明申请

US20170073814A1 NANOFABRICATION USING A NEW CLASS OF ELECTRON BEAM INDUCED SURFACE PROCESSING TECHNIQUES 审中-公开
标题翻译：使用新类型的电子束诱导表面处理技术的纳米制备
公开(公告)号：US20170073814A1
公开(公告)日：2017-03-16
申请号：US14851962
申请日：2015-09-11
申请人： FEI Company
发明人： James Bishop , Toan Trong Tran , Igor Aharonovich , Charlene Lobo , Milos Toth
IPC分类号： C23C16/48
摘要： Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.
摘要翻译：描述了基于电子束诱导的衬底表面化学变化的直接光刻图案定义的方法和系统。该方法涉及对于指定表面化学（SC）的全局定义的初始化学处理。然后使用气态前体和表面之间的电子束诱导表面反应来局部改变SC。因此可以实现在衬底上稳定的指定表面化学物质的高分辨率图案化。然后可以通过利用某些SC组合的特异性或通过表面能的差异的方法将限定的图案用于选择性材料沉积。可以在不破坏真空的情况下原位执行所有步骤。

79. 发明申请

US20170073812A1 Laser-assisted atomic layer deposition of 2D metal chalcogenide films 审中-公开
标题翻译：激光辅助原子层沉积二维金属硫族化物薄膜
公开(公告)号：US20170073812A1
公开(公告)日：2017-03-16
申请号：US15257493
申请日：2016-09-06
申请人： Ultratech, Inc.
发明人： Ganesh Sundaram
IPC分类号： C23C16/455 , C23C16/56 , C23C16/48 , C23C16/50
CPC分类号： C23C16/56 , C23C16/305 , C23C16/405 , C23C16/45542 , C23C16/45544 , H01J37/32357 , H01J37/32458 , H01J37/32724
摘要： Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX2, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MO3 film is also disclosed.
摘要翻译：公开了使用激光辅助原子层沉积形成二维金属硫族化物膜的方法。直接生长方法包括：将一层含金属的分子粘附到加热的基底的表面上; 然后使含金属分子层与带有硫族化物的自由基化的前体气体一起使用等离子体输送，以形成金属硫族化物的无定形2D膜; 然后激光退火无定形2D膜以形成金属硫族化物的结晶2D膜，其可以具有MX或MX2的形式，其中M是金属，X是硫族化物。还公开了包括形成MO 3膜的间接生长方法。

80. 发明申请

US20170069345A1 METHODS OF FORMING OVERCOATS ON MAGNETIC STORAGE MEDIA AND MAGNETIC STORAGE MEDIA FORMED THEREBY 审中-公开
标题翻译：形成磁性储存介质和形成磁性储存介质的方法
公开(公告)号：US20170069345A1
公开(公告)日：2017-03-09
申请号：US14848442
申请日：2015-09-09
申请人： Seagate Technology LLC
发明人： Michael J. Stirniman , Xiaoding Ma , Paul M. Jones , Hamid R. Samani , Tommy T. Cheung , Christopher L. Platt , Qian Guo , Yang Yang
IPC分类号： G11B5/725 , C23C16/56 , C23C16/48 , C23C16/26 , G11B5/84 , C23C16/50
CPC分类号： C23C16/56 , G11B5/8408
摘要： Methods of forming a magnetic storage disc, the method including depositing a carbon containing material on a magnetic recording layer to form a carbon containing layer, wherein the carbon containing layer is deposited using chemical vapor deposition, ion beam deposition, or filtered cathodic arc deposition; treating the carbon containing layer with a source of oxygen to form an oxygen layer; and depositing a lubricant on the oxygen layer.
摘要翻译：形成磁存储盘的方法，所述方法包括在磁记录层上沉积含碳材料以形成含碳层，其中使用化学气相沉积，离子束沉积或过滤的阴极电弧沉积沉积含碳层; 用氧源处理含碳层以形成氧层; 并在氧层上沉积润滑剂。

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