专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06867427B2 Molecular mechanical devices with a band gap change activated by an electric field for optical switching applications 失效
标题翻译：具有带隙变化的分子机械器件由光电开关应用的电场激活
公开(公告)号：US06867427B2
公开(公告)日：2005-03-15
申请号：US10618358
申请日：2003-07-10
申请人： Sean Xiao-An Zhang , R. Stanley Williams , Kent D. Vincent
发明人： Sean Xiao-An Zhang , R. Stanley Williams , Kent D. Vincent
IPC分类号： G02B26/02 , G02F1/15 , G02F1/17 , G11C13/02 , G11C23/00 , H01L31/0352 , G02F1/00 , C09K19/02
CPC分类号： G11C13/02 , B82Y10/00 , G02B26/026 , G02F1/061 , G02F1/15 , G02F1/174 , G11C13/0014 , G11C13/04 , G11C23/00 , G11C2213/14 , G11C2213/77 , G11C2213/81
摘要： Molecular systems are provided for electric field activated switches, such as optical switches. The molecular system has an electric field induced band gap change that occurs via one of the following mechanisms: (1) molecular conformation change; (2) change of extended conjugation via chemical bonding change to change the band gap; or (3) molecular folding or stretching. Nanometer-scale reversible optical switches are thus provided that can be assembled easily to make a variety of optical devices, including optical displays.
摘要翻译：为电场激活开关（如光开关）提供分子系统。分子系统具有通过以下机制之一发生的电场诱导的带隙变化：（1）分子构象变化; （2）通过化学键改变扩展共轭的变化来改变带隙; 或（3）分子折叠或拉伸。因此，提供了能够容易地组装以制造包括光学显示器在内的各种光学装置的纳米级的可逆光学开关。

72. 发明申请

US20050052894A1 Uses of nanofabric-based electro-mechanical switches 审中-公开
标题翻译：使用纳米机电开关
公开(公告)号：US20050052894A1
公开(公告)日：2005-03-10
申请号：US10935994
申请日：2004-09-08
申请人： Brent Segal , Thomas Rueckes
发明人： Brent Segal , Thomas Rueckes
IPC分类号： G11C13/02 , H01H1/00 , H01H1/027 , H01H9/20
CPC分类号： G11C23/00 , B82Y10/00 , B82Y30/00 , G11C13/025 , H01H1/0094 , H01H1/027 , H01H2001/0005
摘要： Uses of electromechanical nanoswitches made from preformed carbon nanotube films, layers, fabrics, ribbons, are disclosed.
摘要翻译：公开了由预制碳纳米管膜，层，织物，带制成的机电纳米开关的使用。

73. 发明申请

US20050045867A1 Nanoscale heterojunctions and methods of making and using thereof 审中-公开
标题翻译：纳米尺度异质结及其制备和使用方法
公开(公告)号：US20050045867A1
公开(公告)日：2005-03-03
申请号：US10695775
申请日：2003-10-30
申请人： Cengiz Ozkan , Sathyajith Ravindran , Roger Lake , Mihrimah Ozkan , Natan Portney
发明人： Cengiz Ozkan , Sathyajith Ravindran , Roger Lake , Mihrimah Ozkan , Natan Portney
IPC分类号： G11C13/02 , H01L21/00 , H01L29/06 , H01L29/12 , H01L29/22 , H01L51/05 , H01L51/30 , H01L31/0328
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C2213/17 , H01L29/0673 , H01L29/068 , H01L29/127 , H01L29/22 , H01L51/0048 , H01L51/0508 , H01L51/0587 , H01L51/0595
摘要： Disclosed herein are nanoscale heterojunctions and methods of making and using thereof. The heterojunctions comprise at least one carbon nanotube with at least one nanostructure such as a quantum dot connected, immobilized, attached, or affixed thereto. The carbon nanotubes may be single walled, multi-walled, or a combination of both. The nanostructure is preferably a quantum dot such as a ZnS capped CdSe core. The carbon nanotube heterojunctions may be employed in various nanoscale electronics and optoelectronic devices and multilayered systems including light emitting diodes, single electron transistors, spintronic devices, field emission flat panel displays, vacuum microelectronic sources, biosensors, random access memories, spin valves, and the like.
摘要翻译：本文公开了纳米级异质结及其制备和使用方法。异质结包括至少一个具有至少一个纳米结构的碳纳米管，例如量子点连接，固定，附着或附着于其上。碳纳米管可以是单壁的，多壁的或两者的组合。纳米结构优选为量子点，例如ZnS封端的CdSe核。碳纳米管异质结可用于各种纳米尺度电子学和光电器件以及包括发光二极管，单电子晶体管，自旋电子器件，场致发射平板显示器，真空微电子源，生物传感器，随机存取存储器，自旋阀等多层系统中。喜欢。

74. 发明申请

US20050036364A1 Method and driver for programming phase change memory cell 失效
标题翻译：用于编程相变存储单元的方法和驱动程序
公开(公告)号：US20050036364A1
公开(公告)日：2005-02-17
申请号：US10845065
申请日：2004-05-14
申请人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
发明人： Yong-ho Ha , Beak-hyung Cho , Ji-hye Yi
IPC分类号： G11C13/02 , G11C16/02 , G11C11/00 , G11C19/08
CPC分类号： G11C13/0069 , G11C7/04 , G11C13/0004 , G11C2013/0092
摘要： In the method of programming a phase change memory cell, having a lower resistive state and a higher resistive state, to the lower resistive state, the memory cell is heated to first temperature. Subsequently, the memory cell is heated to second temperature, which is greater than the first temperature.
摘要翻译：在将具有较低电阻状态和较高电阻状态的相变存储单元编程为较低电阻状态的方法中，将存储单元加热至第一温度。随后，将存储单元加热至大于第一温度的第二温度。

75. 发明申请

US20050035344A1 Isolation structure for deflectable nanotube elements 有权
标题翻译：可偏转纳米管元件的隔离结构
公开(公告)号：US20050035344A1
公开(公告)日：2005-02-17
申请号：US10917606
申请日：2004-08-13
申请人： Claude Bertin , Thomas Rueckes , Brent Segal
发明人： Claude Bertin , Thomas Rueckes , Brent Segal
IPC分类号： G11C13/02 , H01H1/027 , H01H59/00 , H01L27/28 , H01L29/06 , H01L29/73 , H01L29/78 , H01L51/30
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements and logic circuits. Under one embodiment of the invention, a switching element includes an input node, an output node, a nanotube channel element having at least one electrically conductive nanotube, and a control electrode. The control electrode is disposed in relation to the nanotube channel element to controllably form an electrically conductive channel between the input node and the output node. The channel at least includes said nanotube channel element. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. Under another embodiment of the invention, the control electrode is arranged in relation to the nanotube channel element to form said conductive channel by causing electromechanical deflection of said nanotube channel element. Under another embodiment of the invention, the output node includes an isolation structure disposed in relation to the nanotube channel element so that channel formation is substantially invariant from the state of the output node. Under another embodiment of the invention, the isolation structure includes electrodes disposed on opposite sides of the nanotube channel element and said electrodes produce substantially the same electric field. Under another embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.
摘要翻译：基于纳米管的开关元件和逻辑电路。在本发明的一个实施例中，开关元件包括输入节点，输出节点，具有至少一个导电纳米管的纳米管通道元件和控制电极。控制电极相对于纳米管通道元件设置，以在输入节点和输出节点之间可控制地形成导电通道。通道至少包括所述纳米管通道元件。输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。在本发明的另一实施例中，控制电极相对于纳米管通道元件布置，以通过引起所述纳米管通道元件的机电偏转而形成所述导电通道。在本发明的另一个实施例中，输出节点包括相对于纳米管通道元件设置的隔离结构，使得通道形成从输出节点的状态基本上是不变的。在本发明的另一个实施例中，隔离结构包括设置在纳米管通道元件的相对侧上的电极，所述电极产生基本上相同的电场。在本发明的另一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气地布置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

76. 发明授权

US06854092B2 Reducing variation in randomized nanoscale circuit connections 有权
标题翻译：减少随机纳米级电路连接的变化
公开(公告)号：US06854092B2
公开(公告)日：2005-02-08
申请号：US10216987
申请日：2002-08-12
申请人： Tad Hogg
发明人： Tad Hogg
IPC分类号： G06F17/50 , G11C13/02
CPC分类号： G11C13/02 , B82Y10/00 , G11C2213/81 , Y10S977/762 , Y10S977/936
摘要： A method and apparatus of reducing variations in nanoscale circuit connections. One exemplary embodiment includes: placing a first connector between a first addressing wire and a first nanowire in a partial circuit; and applying bias to the partial circuit so that a second connector is placed between a second addressing wire and a second nanowire. This method of bias connections is repeated for each wire in the full circuit. Thus, bias is used to influence the positioning of connectors on additional wires (if any) in the full circuit.
摘要翻译：减少纳米级电路连接变化的方法和装置。一个示例性实施例包括：在部分电路中将第一连接器放置在第一寻址线和第一纳米线之间; 以及将偏压施加到所述部分电路，使得第二连接器被放置在第二寻址线和第二纳米线之间。对于全电路中的每根线重复这种偏置连接方法。因此，偏置用于影响连接器在全电路中附加导线（如果有的话）上的定位。

77. 发明授权

US06847541B2 Information storage device, and information storage method and information regeneration method employing the information storage device 失效
标题翻译：信息存储装置以及采用信息存储装置的信息存储方法和信息再生方法
公开(公告)号：US06847541B2
公开(公告)日：2005-01-25
申请号：US10454505
申请日：2003-06-05
申请人： Tsuyoshi Tsujioka
发明人： Tsuyoshi Tsujioka
IPC分类号： G11C13/02 , G11C13/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/02 , G11C2213/14 , G11C2213/79
摘要： An information storage device which has a layer containing such bistable molecules that the molecular structure reversibly changes due to an isomerization reaction, at least one reaction of the isomerization reaction is caused by electric carrier injection, and the electric characteristics change as between before and after the isomerization reaction.
摘要翻译：一种信息存储装置，其具有包含分子结构由于异构化反应而可逆地变化的这种双稳态分子的层，由电荷载体注入引起异构化反应的至少一个反应，并且电特性在前后之间变化异构化反应。

78. 发明申请

US20050006640A1 Polymer-based memory element 审中-公开
标题翻译：基于聚合物的记忆元件
公开(公告)号：US20050006640A1
公开(公告)日：2005-01-13
申请号：US10608791
申请日：2003-06-26
申请人： Warren Jackson , Sean Zhang , Craig Perlov
发明人： Warren Jackson , Sean Zhang , Craig Perlov
IPC分类号： G11C13/02 , H01L27/28 , H01L51/00 , H01L51/30 , H01L47/00
CPC分类号： G11C13/0016 , B82Y10/00 , G11C13/0014 , H01L27/28 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0041
摘要： Fuse-type and antifuse-type semiconducting-organic-polymer-film-based memory elements for use in memory devices are disclosed. Various embodiments of the present invention employ a number of different techniques to alter the electrical conductance or, equivalently, the resistance, of organic-polymer-film memory elements in order to produce detectable memory-state changes in the memory elements. The techniques involve altering the electronic properties of the organic polymers by application of heat or electric fields, often in combination with additional chemical compounds, to either increase or decrease the resistance of the organic polymers.
摘要翻译：公开了用于存储器件的保险丝型和反熔丝型半导体 - 有机聚合物膜基存储元件。本发明的各种实施例使用多种不同的技术来改变有机 - 聚合物膜存储元件的电导率或等效的电阻，以便产生存储元件中的可检测的存储状态变化。这些技术涉及通过施加热或电场（通常与其它化合物组合）来改变有机聚合物的电子性质来提高或降低有机聚合物的电阻。

79. 发明授权

US06838720B2 Memory device with active passive layers 有权
标题翻译：具有主动被动层的存储器件
公开(公告)号：US06838720B2
公开(公告)日：2005-01-04
申请号：US10413841
申请日：2003-04-15
申请人： Juri H. Krieger , Nikolai Yudanov
发明人： Juri H. Krieger , Nikolai Yudanov
IPC分类号： G11C11/34 , G11C11/56 , G11C13/02 , H01L27/28 , H01L51/00 , H01L51/30 , H01L27/108 , H01L31/119
CPC分类号： G11C13/0016 , B82Y10/00 , G11C11/34 , G11C11/5664 , G11C13/0014 , G11C2213/11 , G11C2213/12 , G11C2213/15 , G11C2213/56 , G11C2213/72 , G11C2213/77 , H01L27/28 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0041
摘要： A memory including memory cells having active and passive layers may store multiple information bits. The active layer may include an organic polymer that has a variable resistance based on the movement of charged species (ions or ions and electrons) between the passive layer and the active layer. The passive layer may be a super-ionic material that has high ion and electron mobility. The active layer may be self-assembled from a monomer in a liquid or gas.
摘要翻译：包括具有有源层和无源层的存储单元的存储器可以存储多个信息位。有源层可以包括有机聚合物，其基于被动层与有源层之间的带电物质（离子或离子和电子）的移动而具有可变电阻。钝化层可以是具有高离子和电子迁移率的超离子材料。活性层可以从液体或气体中的单体自组装。

80. 发明授权

US06162926A Multi-substituted fullerenes and methods for their preparation and characterization 失效
标题翻译：多取代富勒烯及其制备和表征方法
公开(公告)号：US06162926A
公开(公告)日：2000-12-19
申请号：US969261
申请日：1997-11-13
申请人： Randall B. Murphy , Stephen R. Wilson , Quing Lu
发明人： Randall B. Murphy , Stephen R. Wilson , Quing Lu
IPC分类号： C07B61/00 , C07C61/00 , C07D209/58 , C07D213/16 , C07D317/72 , C07D333/08 , C07D487/06 , G11C13/02 , C07D403/04 , C07D403/14 , C07D407/02
CPC分类号： G11C13/025 , B82Y10/00 , C07C61/00 , C07C2604/00 , C07D209/58 , C07D213/16 , C07D317/72 , C07D333/08 , C07D487/06 , C40B40/04 , C40B50/08 , C40B50/14 , G11C13/0014 , G11C13/0019 , Y10S977/734 , Y10S977/835 , Y10S977/842 , Y10S977/881
摘要： The invention is directed to multiply-substituted fullerene derivatives of novel configurations, and methods for their preparation and use. The methods involve the combinatorial synthesis of a library of fullerene derivatives and comprises the steps of forming a mixture of fullerene derivatives by reacting the C.sub.n fullerene with two or more reactive precursor compounds, and removing the unreacted compounds to yield the fullerene derivatives having the desired activity. Methods for the identification and screening of a combinatorial library of fullerenes by .sup.3 He-nuclear magnetic resonance and electrospray mass spectrometry to define members with the optimal desired activity are also provided.
摘要翻译：本发明涉及新配置的多取代富勒烯衍生物及其制备和使用方法。所述方法包括富勒烯衍生物文库的组合合成，包括以下步骤：通过使Cn富勒烯与两种或多种反应性前体化合物反应形成富勒烯衍生物的混合物，并除去未反应的化合物以产生具有所需活性的富勒烯衍生物。还提供了通过3He核磁共振和电喷雾质谱鉴定和筛选富勒烯组合文库以定义具有最佳期望活性的成员的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式