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71. 发明授权

US5587587A Ion implanting apparatus and ion implanting method 失效
标题翻译：离子注入装置和离子注入方法
公开(公告)号：US5587587A
公开(公告)日：1996-12-24
申请号：US284992
申请日：1994-08-04
申请人： Hiroyuki Hashimoto
发明人： Hiroyuki Hashimoto
IPC分类号： C23C14/48 , H01J37/02 , H01J37/244 , H01J37/317 , H01L21/265 , H01J37/304
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0045
摘要： An ion implanting apparatus for irradiating a material, for example, a semiconductor wafer, with an ion beam generated at an ion source, for implanting the ion into the material, is provided with a magnet at a side of the material opposite to a side into which the ion is irradiated. Thereby, the implantation is performed without charging thereon and with a high yielding ratio.
摘要翻译：一种离子注入装置，用于在离子源处产生的离子束照射材料，例如半导体晶片，用于将离子注入到材料中，在该材料的与侧面相反的一侧设置有磁体离子被照射。由此，不进行充电而以高的屈服比进行注入。

72. 发明授权

US5531420A Ion beam electron neutralizer 失效
标题翻译：离子束电子中和剂
公开(公告)号：US5531420A
公开(公告)日：1996-07-02
申请号：US270022
申请日：1994-07-01
申请人： Victor M. Benveniste
发明人： Victor M. Benveniste
IPC分类号： C23C14/48 , H01J37/02 , H01J37/317 , H01L21/265 , H05H3/00
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0044
摘要： An ion beam neutralizer has an electron source and an electron deflector for directing electrons from the source into an ion beam. A power supply biases an acceleration grid to a potential suitable for accelerating electrons away from a filament that produces electrons. A second grid defines an electric field through which the electrons move. Electrons pass through the second grid and are deflected by a field between the second grid and a parabolic shaped metal deflector.
摘要翻译：离子束中和器具有电子源和用于将电子从源引导到离子束中的电子偏转器。电源将加速度网格偏置到适于加速电子的电位远离产生电子的细丝。第二个栅格定义电子通过其移动的电场。电子通过第二格栅并被第二格栅和抛物线形金属偏转器之间的场偏转。

73. 发明授权

US5451783A Charged-particle analyser 失效
标题翻译：带电粒子分析仪
公开(公告)号：US5451783A
公开(公告)日：1995-09-19
申请号：US218115
申请日：1994-03-25
申请人： Peter Coxon , Bruce J. McIntosh
发明人： Peter Coxon , Bruce J. McIntosh
IPC分类号： H01J37/02 , H01J37/285 , H01J49/48 , H01J49/44
CPC分类号： H01J37/026 , H01J37/285 , H01J49/484 , H01J2237/0044 , H01J2237/04926 , H01J2237/2855
摘要： A charged particle analyzer which irradiates a specimen and analyzes charged particles emitted therefrom, for example a photo electron spectrometer, having a flood-source which emits charged particles to neutralize the charge which develops on a specimen. The analyzer is provided with electrostatic and magnetic lenses which may be used separately or in combination. The flood source is provided within the lens column of the analyzer and is arranged such that when the electrostatic lens is in use, the charged particles emitted by the flood source pass around the outside of the objective electrostatic lens element, whereas when the magnetic lens is in use, or when both lenses are in use, they pass through that element.
摘要翻译：一种带电粒子分析仪，其照射样本并分析从其发射的带电粒子，例如光电子能谱仪，其具有发射带电粒子的泛洪源，以中和样品上产生的电荷。分析仪具有可以单独使用或组合使用的静电和磁性透镜。洪水源设置在分析仪的透镜柱内，并且布置成使得当使用静电透镜时，由洪水源发射的带电粒子通过目标静电透镜元件的外侧，而当磁透镜为在使用中，或当两个镜头都在使用时，它们通过该元件。

74. 发明授权

US5354986A Ion implantation apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US5354986A
公开(公告)日：1994-10-11
申请号：US974873
申请日：1992-11-12
申请人： Satoshi Yamada , Hirohisa Yamamoto , Shigeru Shiratake
发明人： Satoshi Yamada , Hirohisa Yamamoto , Shigeru Shiratake
IPC分类号： C23C14/48 , C23C14/54 , G21K1/14 , H01J37/02 , H01J37/317 , H01L21/265 , H01J37/30 , H05H3/00
CPC分类号： G21K1/14 , H01J37/023 , H01J37/3171 , H01J2237/0044 , H01J2237/30455
摘要： An ion implantation apparatus includes a charge neutralizer having a control circuit which controls the quantity of secondary electrons irradiating a semiconductor wafer. Electrons are generated in response to a direction of movement of a semiconductor wafer to neutralize positive charge on the semiconductor wafer. The apparatus can neutralize the positive charge homogeneously and prevent electrical breakdown of the semiconductor wafer.
摘要翻译：离子注入装置包括具有控制电路的电荷中和器，该控制电路控制照射半导体晶片的二次电子的量。响应于半导体晶片的移动方向产生电子以中和半导体晶片上的正电荷。该装置可以均匀地中和正电荷并防止半导体晶片的电击穿。

75. 发明授权

US5336895A Impurity free reference grid for use charged partiole beam spectroscopes 失效
标题翻译：不含杂质的参考网格用于使用带电单分子束光谱
公开(公告)号：US5336895A
公开(公告)日：1994-08-09
申请号：US903467
申请日：1992-06-25
申请人： Akihiko Nakano
发明人： Akihiko Nakano
IPC分类号： G01Q40/00 , H01J49/06 , H01J37/02 , H01J37/20 , H01J37/252 , H01J49/02 , G01N23/00
CPC分类号： H01J37/02
摘要： A reference grid for use in charged particle beam spectroscopes in analyzing an impurity contained in a target sample, which includes a grid composed of a material free of the impurity.
摘要翻译：用于分析包含在目标样品中的杂质的带电粒子束分光器的参考栅格，其包括由不含杂质的材料构成的栅格。

76. 发明授权

US5315119A Electron beam irradiating apparatus and electric signal detecting apparatus 失效
标题翻译：电子束照射装置和电信号检测装置
公开(公告)号：US5315119A
公开(公告)日：1994-05-24
申请号：US983229
申请日：1992-11-19
申请人： Fumio Komatsu , Katsuya Okumura , Motosuke Miyoshi
发明人： Fumio Komatsu , Katsuya Okumura , Motosuke Miyoshi
IPC分类号： G21K5/04 , H01J37/02 , H01J37/147 , H01J37/302 , H01L21/66
CPC分类号： H01J37/3026 , H01J37/026
摘要： To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.
摘要翻译：为了防止电荷积累在由电子束扫描的平面上并进一步提高S / N比，电子束照射装置包括：位置信息信号输出部分，用于输出位置信息信号，以依次指定位置信息信号电子束照射在由电子束扫描的平面上，以便随机地指定照射位置; 以及照射控制器，用于响应于输出的位置信息信号，控制电子束在照射位置照射电子束。此外，为了在像素时钟信号的周期内在足够的时间间隔内积分光电信号，电信号检测电路包括多个采样保持电路和用于依次选择和激活采样保持电路的选择电路。

77. 发明授权

US5250780A Apparatus for treating the surface of workpieces by means of a plasma torch 失效
标题翻译：用于通过等离子体焰炬处理工件表面的装置
公开(公告)号：US5250780A
公开(公告)日：1993-10-05
申请号：US755892
申请日：1991-09-06
申请人： Bernard Hansz , Silvano Keller
发明人： Bernard Hansz , Silvano Keller
IPC分类号： B23K10/00 , C08J7/00 , C23C14/34 , H01J37/02 , H01J37/32 , H05H1/26 , B23K9/00
CPC分类号： H01J37/20 , H01J37/32752 , H01J2237/002 , H01J2237/2001
摘要： The apparatus serves for treating workpieces by means of a plasma torch in a gaseous, preferably in an inert gaseous atmosphere. For this purpose, there is provided a gas-tight container and, in the interior of the container, a plasma gun as well as a cooling member for cooling the treated workpiece by a gaseous cooling medium stream. The cooling medium is a gas circulating in a closed circuit. Thus, the cooling gas can continuously used because heat is removed from the gas in a heat exchanger. A cooling operation can be realized in this way in temperature regions which are much higher than if liquefied gas is used.
摘要翻译：该装置用于通过等离子体焰炬处理气体，优选在惰性气体气氛中处理工件。为此，提供了一种不透气的容器，并且在容器的内部具有等离子体枪以及用于通过气态冷却介质流冷却经处理的工件的冷却构件。冷却介质是在闭路中循环的气体。因此，冷却气体可以连续使用，因为在热交换器中从气体中除去热量。在这样的温度区域中可以实现冷却操作，这比使用液化气体要高得多。

78. 发明授权

US5144147A Ion implantation apparatus and method of cleaning the same 失效
标题翻译：离子植入装置及其清洗方法
公开(公告)号：US5144147A
公开(公告)日：1992-09-01
申请号：US750949
申请日：1991-08-28
申请人： Masakazu Shiozaki , Katsuya Okumura
发明人： Masakazu Shiozaki , Katsuya Okumura
IPC分类号： C23C14/48 , C23G5/00 , H01J37/02 , H01J37/16 , H01J37/18 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/02 , H01J2237/006 , H01J2237/022
摘要： The present invention is directed to the cleaning of an ion implantation apparatus. The ion implantation apparatus of the present invention comprises a sample holder 21 and a gauge 23 acting as a passageway of an ion beam running toward a sample held by the sample holder. The gauge is provided with a gas inlet port 25 for introducing a reactive gas into the ion beam passageway. The reactive gas collides against the ion beam within the ion beam passageway so as to be ionized. The ionized reactive permits removing a stain attached to the ion implantation apparatus. If the ion implantation apparatus further comprises a bias source 26 for applying voltage of a desired polarity to the gauge, the cleaning can be performed more efficiently.

79. 发明授权

US5089710A Ion implantation equipment 失效
标题翻译：离子植入设备
公开(公告)号：US5089710A
公开(公告)日：1992-02-18
申请号：US577001
申请日：1990-09-04
申请人： Shuji Kikuchi , Mitsuyuki Yamaguchi , Masahiko Matsudo
发明人： Shuji Kikuchi , Mitsuyuki Yamaguchi , Masahiko Matsudo
IPC分类号： H01J37/317 , H01J37/02 , H01L21/265
CPC分类号： H01J37/026
摘要： An ion implantation equipment for implanting ion beam into an implanting target characterized in that an electrons are induced to the direction of an ion beam being injected to said implanting target, and a predetermined bias voltage is applied between a plasma generation chamber and Faraday.

80. 发明授权

US4992661A Method and apparatus for neutralizing an accumulated charge on a specimen by means of a conductive lattice deposited on the specimen 失效
标题翻译：用于通过沉积在样品上的导电晶格来中和试样上累积电荷的方法和装置
公开(公告)号：US4992661A
公开(公告)日：1991-02-12
申请号：US233016
申请日：1988-08-17
申请人： Hifumi Tamura , Yoshinori Ikebe , Katsuhiko Muroyama , Hiroyuki Sumiya
发明人： Hifumi Tamura , Yoshinori Ikebe , Katsuhiko Muroyama , Hiroyuki Sumiya
IPC分类号： H01J37/02 , H01J37/20 , H05F3/02
CPC分类号： B82Y15/00 , H01J37/026 , H01J37/20 , H05F3/02
摘要： A method of neutralizing an accumulated charge on a surface of a specimen which is examined in a scanning electron microscope (SEM) or a scanning ion microprobe mass analyzer (IMA), utilizes an electrically conductive thin film deposited on a part of the specimen surface. The charge is due to irradiation by a primary charged particle beam from the SEM or IMA. The thin film is made conductivity with a specimen mount mounting the specimen, and the irradiating range of the primary beam covers at least a part of the thin film. Thus, the accumulated charge can be neutralized, thereby a resolution of the SEM being improved due to applying higher accelerating voltage for the primary beam, and measured data of higher reliability being obtained in the IMA.
摘要翻译：在扫描电子显微镜（SEM）或扫描离子微探针质量分析仪（IMA）中检查的样品表面积累的电荷的方法利用沉积在试样表面的一部分上的导电性薄膜。电荷是由于来自SEM或IMA的初级带电粒子束的照射引起的。该薄膜通过安装样本的样品座安装成导电性，并且初级束的照射范围覆盖薄膜的至少一部分。因此，可以中和累积电荷，从而由于对主光束施加较高的加速电压而改善了SEM的分辨率，并且在IMA中获得了更高可靠性的测量数据。

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