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71. 发明授权

US09530958B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US09530958B2
公开(公告)日：2016-12-27
申请号：US14607487
申请日：2015-01-28
申请人： Sony Corporation
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
IPC分类号： H01L29/82 , H01L43/10 , H01L43/08 , H01L27/22
CPC分类号： H01L43/02 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).
摘要翻译：磁阻元件包括层叠结构，其包括多个固定层，由非磁性材料形成的中间层和记录层，所述多个固定层经由非磁性层层叠，所述多个固定层具有至少第一固定层和第二固定层，满足以下公式：S1> S2（其中S1是与中间层相邻的第一固定层的面向中间层的部分的面积，S2是固定层的除了第一固定层之外的固定层中具有最小面积的区域）。

72. 发明授权

US09515122B2 Electronic device and method for fabricating the same 有权
公开(公告)号：US09515122B2
公开(公告)日：2016-12-06
申请号：US15010273
申请日：2016-01-29
申请人： SK hynix Inc.
发明人： Young-Ju Lee
IPC分类号： H01L29/82 , H01L27/22 , H01L45/00 , H01L27/24 , H01L43/08 , H01L43/10 , H01L43/12 , G11C11/16 , H01L43/02 , G06F12/08
CPC分类号： H01L27/222 , G06F12/0831 , G06F12/0866 , G06F2212/621 , G11C11/161 , H01L27/228 , H01L27/2463 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , H01L45/04 , H01L45/1233 , H01L45/1675
摘要： Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: an interlayer dielectric layer formed over a substrate including first and second areas; a first contact plug contacted with the substrate through the interlayer dielectric layer of the second area; an anti-peeling layer formed over the interlayer dielectric layer including the first contact plug; a second contact plug contacted with the substrate through the anti-peeling layer and the interlayer dielectric layer in the first area; and a variable resistance pattern contacted with the second contact plug.

73. 发明授权

US09508926B2 Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium 有权
标题翻译：具有含有钪的底层和侧壁层的磁阻效应元件
公开(公告)号：US09508926B2
公开(公告)日：2016-11-29
申请号：US14637254
申请日：2015-03-03
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Eiji Kitagawa , Minoru Amano , Megumi Yakabe , Hiroaki Maekawa
IPC分类号： H01L43/02 , H01L29/82 , H01L43/08 , H01L43/12 , H01L43/00 , H01L43/10 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.
摘要翻译：磁阻效应元件包括具有磁各向异性和可变磁化方向的记录层，具有磁各向异性和不变磁化方向的参考层，记录层和参考层之间的中间层，含有钪（Sc）的底层，在记录层的与设置有记录层的表面侧相反的表面侧，以及包含Sc的氧化物并设置在记录层和中间层的侧表面上的侧壁层。

74. 发明授权

US09502467B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09502467B2
公开(公告)日：2016-11-22
申请号：US14282009
申请日：2014-05-20
申请人： Sony Corporation
发明人： Mitsuharu Shoji , Ichiro Fujiwara
IPC分类号： H01L29/82 , H01L43/00 , H01L27/22 , H01L43/12
CPC分类号： H01L27/228 , H01L27/2436 , H01L43/02 , H01L43/10 , H01L43/12
摘要： A semiconductor device includes: a first member including a selection transistor on a front surface side of a first substrate; and a second member including a resistance change device and a connection layer that comes in contact with the resistance change device, the connection layer being bonded to a back surface of the first member.
摘要翻译：半导体器件包括：第一构件，其包括在第一衬底的前表面侧上的选择晶体管; 以及第二构件，其包括电阻变化装置和与所述电阻变化装置接触的连接层，所述连接层接合到所述第一构件的背面。

75. 发明授权

US09490421B2 Method and system for providing vertical spin transfer switched magnetic junctions and memories using such junctions 有权
标题翻译：用于提供垂直自旋转移开关磁结和使用这种结的存储器的方法和系统
公开(公告)号：US09490421B2
公开(公告)日：2016-11-08
申请号：US13751304
申请日：2013-01-28
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Steven M. Watts
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Steven M. Watts
IPC分类号： H01L29/82 , H01L21/02 , H01L43/08 , H01L43/12 , H01F10/32 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01L43/12
摘要： A method and system provide a magnetic junction usable in a magnetic device and which resides on a substrate. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer, the nonmagnetic spacer layer and the reference layer form nonzero angle(s) with the substrate. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置并位于基板上的磁结。磁结包括参考层，非磁性间隔层和自由层。非磁性间隔层位于参考层和自由层之间。自由层，非磁性间隔层和参考层与衬底形成非零角度。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

76. 发明申请

US20160276007A1 SPIN TRANSISTOR MEMORY 有权
标题翻译：旋转晶体管存储器
公开(公告)号：US20160276007A1
公开(公告)日：2016-09-22
申请号：US15063808
申请日：2016-03-08
申请人： Kabushiki Kaisha Toshiba
发明人： Hideyuki SUGIYAMA , Mizue ISHIKAWA , Tomoaki INOKUCHI , Yoshiaki SAITO
IPC分类号： G11C11/16 , H01L29/82 , H01L27/22 , H01L43/02 , H01L43/08
CPC分类号： G11C11/161 , G11C11/15 , G11C11/165 , H01L29/66984 , H03K19/18
摘要： A spin transistor memory according to an embodiment includes: a first semiconductor region, a second semiconductor region, and a third semiconductor region, each being of a first conductivity type and disposed in a semiconductor layer; a first gate disposed above the semiconductor layer between the first semiconductor region and the second semiconductor region; a second gate disposed above the semiconductor layer between the second semiconductor region and the third semiconductor region; and a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer disposed on the first semiconductor region, the second semiconductor region, and the third semiconductor region respectively.
摘要翻译：根据实施例的自旋晶体管存储器包括：第一半导体区域，第二半导体区域和第三半导体区域，每个都是第一导电类型并且设置在半导体层中; 设置在所述第一半导体区域和所述第二半导体区域之间的所述半导体层上方的第一栅极; 设置在所述第二半导体区域和所述第三半导体区域之间的所述半导体层上方的第二栅极; 以及分别设置在第一半导体区域，第二半导体区域和第三半导体区域上的第一铁磁层，第二铁磁层和第三铁磁层。

77. 发明授权

US09444035B2 Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication 有权
标题翻译：用于垂直磁隧道结装置的短路径的氧化镁封盖及其制造方法
公开(公告)号：US09444035B2
公开(公告)日：2016-09-13
申请号：US14483104
申请日：2014-09-10
申请人： QUALCOMM Incorporated
发明人： Chando Park , Kangho Lee , Jimmy Kan , Matthias Georg Gottwald , Xiaochun Zhu , Seung Hyuk Kang
IPC分类号： H01L29/82 , H01L43/02 , H01L43/12 , H01L43/08
CPC分类号： H01L43/02 , H01L43/08 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.
摘要翻译：磁性隧道结（MTJ）装置包括钉扎层，钉扎层上的隧道势垒层和隧道势垒层上的自由层。 MTJ装置还包括在自由层上的垂直磁各向异性（PMA）增强层，PMA增强层上的覆盖层以及电封闭封盖层，PMA增强层和自由层的导电路径。制造垂直磁性隧道结（pMTJ）器件的方法包括形成覆盖层，垂直磁性各向异性（PMA）增强层和自由层。该方法还包括形成导电层以缩短封盖层，PMA增强层和自由层。

78. 发明授权

US09443577B2 Voltage-switched magnetic random access memory (MRAM) and method for using the same 有权
标题翻译：电压开关磁随机存取存储器（MRAM）及其使用方法
公开(公告)号：US09443577B2
公开(公告)日：2016-09-13
申请号：US14281673
申请日：2014-05-19
申请人： Avalanche Technology Inc.
发明人： Zihui Wang , Xiaobin Wang , Huadong Gan , Yuchen Zhou , Yiming Huai
IPC分类号： H01L29/82 , G11C11/56 , H01L43/08 , G11C11/16
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/165 , G11C11/1659 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： The present invention is directed to a magnetic random access memory comprising a first magnetic tunnel junction (MTJ) including a first magnetic reference layer and a first magnetic free layer with a first insulating tunnel junction layer interposed therebetween; a second MTJ including a second magnetic reference layer and a second magnetic free layer with a second insulating tunnel junction layer interposed therebetween; and an anti-ferromagnetic coupling layer formed between the first and second variable magnetic free layers. The first and second magnetic free layers have a first and second magnetization directions, respectively, that are perpendicular to the layer planes thereof. The first magnetic reference layer has a first pseudo-fixed magnetization direction substantially perpendicular to the layer plane thereof. The second magnetic reference layer has a second pseudo-fixed magnetization direction that is substantially perpendicular to the layer plane thereof and is substantially opposite to the first pseudo-fixed magnetization direction.
摘要翻译：本发明涉及一种包括第一磁性隧道结（MTJ）的磁性随机存取存储器，其包括第一磁性参考层和介于其间的第一绝缘隧道结层的第一磁性自由层; 第二MTJ，包括第二磁性参考层和第二磁性自由层，其间插入有第二绝缘隧道结层; 以及形成在第一和第二可变磁性层之间的反铁磁耦合层。第一和第二无磁性层分别具有垂直于其层平面的第一和第二磁化方向。第一磁性参考层具有基本上垂直于其层平面的第一伪固定磁化方向。第二磁参考层具有基本上垂直于其层平面并与第一伪固定磁化方向基本相反的第二伪固定磁化方向。

79. 发明授权

US09431457B1 Implementing deposition growth method for magnetic memory 有权
标题翻译：实现磁记忆沉积生长法
公开(公告)号：US09431457B1
公开(公告)日：2016-08-30
申请号：US14835271
申请日：2015-08-25
申请人： HGST Netherlands B.V.
发明人： Luiz M. Franca-Neto , Ricardo Ruiz
IPC分类号： H01L29/82 , H01L27/22 , G11C11/16 , H01L43/12 , H01L43/08 , H01L43/02 , H01L43/10
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetic memory array and a method for implementing the magnetic memory array for use in Solid-State Drives (SSDs) are provided. A plurality of magnetic pillar memory cells is formed using a deposition and/or growth process to produce a magnetic memory array substantially avoiding milling of magnetic materials.
摘要翻译：提供了一种磁存储器阵列和用于实现在固态硬盘（SSD）中使用的磁存储器阵列的方法。使用沉积和/或生长工艺形成多个磁柱存储单元，以产生基本上避免研磨磁性材料的磁存储器阵列。

80. 发明授权

US09419065B2 Flexible displays 有权
标题翻译：柔性显示
公开(公告)号：US09419065B2
公开(公告)日：2016-08-16
申请号：US13932834
申请日：2013-07-01
申请人： Apple Inc.
发明人： Brett W. Degner , Chieh-Wei Chen , Dinesh C. Mathew , Paul S. Drzaic , Sang Ha Kim , Silvio Grespan , John Z. Zhong , Jean-Pierre Guillou , Kuo-Hua Sung , Young Bae Park , Vasudha Gupta
IPC分类号： H01L29/82 , H01L27/32 , G02F1/1333 , H05K1/02 , H05K1/18
CPC分类号： H01L27/326 , G02F1/133305 , G02F2001/133388 , H01L27/3297 , H01L51/0097 , H01L2251/5338 , H05K1/028 , H05K1/189 , H05K2201/09036 , H05K2201/0979 , H05K2201/10128 , Y02E10/549
摘要： An electronic device may be provided with an organic light-emitting diode display with minimized border regions. The border regions may be minimized by providing the display with bent edge portions having neutral plane adjustment features that facilitate bending of the bent edge portions while minimizing damage to the bent edge portions. The neutral plane adjustment features may include a modified backfilm layer of the display in which portions of the backfilm layer are removed in a bend region. A display device may include a substrate, a display panel on the substrate having display pixels, and peripheral circuitry proximate the display panel and configured to drive the display pixels. A portion of the periphery of the substrate may be bent substantially orthogonal to the display panel to reduce an apparent surface area of the display device. The bent portion may include an electrode for communication with the peripheral circuitry.
摘要翻译：电子设备可以设置有具有最小边界区域的有机发光二极管显示器。通过为显示器提供具有中立平面调整特征的弯曲边缘部分，可以使边缘区域最小化，这有利于弯曲边缘部分的弯曲同时最小化对弯曲边缘部分的损伤。中性平面调整特征可以包括显示器的改进的背膜层，其中后膜层的部分在弯曲区域中被去除。显示装置可以包括衬底，具有显示像素的衬底上的显示面板以及靠近显示面板的外围电路，并被配置为驱动显示像素。基板的周边的一部分可以基本上垂直于显示面板弯曲，以减少显示装置的表观表面积。弯曲部分可以包括用于与外围电路通信的电极。

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