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81. 发明申请

US20060096419A1 Method for reduction treatment of metal oxide or ironmaking waste and method for concentration and recovery zinc and/or lead 有权
标题翻译：金属氧化物或炼铁废物的还原处理方法及锌和/或铅的浓缩和回收方法
公开(公告)号：US20060096419A1
公开(公告)日：2006-05-11
申请号：US10527809
申请日：2003-09-11
申请人： Hiroshi Ichikawa , Tetsuharu Ibaraki , Shoji Imura , Hiroshi Oda , Yoichi Abe , Shigeki Takahashi , Nobuyuki Kanemori , Satoshi Suzuki
发明人： Hiroshi Ichikawa , Tetsuharu Ibaraki , Shoji Imura , Hiroshi Oda , Yoichi Abe , Shigeki Takahashi , Nobuyuki Kanemori , Satoshi Suzuki
IPC分类号： C21B11/06 , C21B13/08
CPC分类号： C21B13/105 , C21B13/006 , C22B1/245 , C22B5/02 , C22B5/10 , C22B7/02 , C22B13/025 , C22B19/30 , C22B19/34 , Y02P10/136 , Y02P10/214 , Y02P10/216 , Y10S75/961
摘要： A method of reduction treatment of metal oxides characterized by using as a material a powder containing metal oxides and containing alkali metals and halogen elements and further, in accordance with need, carbon, mixing said material with water to produce a slurry, then dehydrating this and charging the dehydrated material, mixed with another material in accordance with need, into a rotary hearth type reduction furnace for reduction.
摘要翻译：一种金属氧化物的还原处理方法，其特征在于使用含有金属氧化物并含有碱金属和卤素元素的粉末作为材料，并且根据需要，还可以根据需要使用碳，将所述材料与水混合以产生浆料，然后将其脱水将脱水材料充满，根据需要与另一种材料混合，进入用于还原的旋转炉床式还原炉。

82. 发明申请

US20060034118A1 Magneto-resistance effect element, magnetic memory and magnetic head 有权
标题翻译：磁阻效应元件，磁记忆体和磁头
公开(公告)号：US20060034118A1
公开(公告)日：2006-02-16
申请号：US11202318
申请日：2005-08-12
申请人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi
发明人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi
IPC分类号： G11C11/00
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01F10/3272 , H01L27/224 , H01L27/228 , H01L43/08
摘要： The magneto-resistance effect element includes: a first ferromagnetic layer serving as a magnetization fixed layer; a magnetization free layer including a second ferromagnetic layer provided on one side of the first ferromagnetic layer, a third ferromagnetic layer which is formed on an opposite side of the second ferromagnetic layer from the first ferromagnetic layer and has a film face having an area larger than that of the second ferromagnetic layer and whose magnetization direction is changeable by an external magnetic field, and an intermediate layer which is provided between the second ferromagnetic layer and the third ferromagnetic layer and which transmits a change of magnetization direction of the third ferromagnetic layer to the second ferromagnetic layer; and a tunnel barrier layer provided between the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译：磁阻效应元件包括：用作磁化固定层的第一铁磁层; 包含设置在第一铁磁层的一侧上的第二铁磁层的无磁化层，第三铁磁层，其形成在第二铁磁层与第一铁磁层相反的一侧上，并具有面积大于第二铁磁层的磁化方向可由外部磁场变化的中间层，以及设置在第二铁磁层与第三铁磁层之间并将第三铁磁性层的磁化方向的变化向第第二铁磁层; 以及设置在第一铁磁层和第二铁磁层之间的隧道势垒层。

83. 发明授权

US06934184B2 Magnetic memory 失效
标题翻译：磁记忆
公开(公告)号：US06934184B2
公开(公告)日：2005-08-23
申请号：US10893915
申请日：2004-07-20
申请人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
发明人： Minoru Amano , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito , Shigeki Takahashi , Tomomasa Ueda , Katsuya Nishiyama , Yoshiaki Asao , Yoshihisa Iwata
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08
CPC分类号： G11C11/15
摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.
摘要翻译：在用于存储单元的磁阻效应元件的存储层中，高度可靠的磁存储器在高存储密度下表现出增强的数据保持稳定性。磁存储器包括具有第一布线的存储单元阵列，与第一布线相交的第二布线和各自设置在相应的第一布线和第二布线的交叉区域的存储单元。当选择对应的第一和第二布线时，选择每个存储单元。每个存储单元包括磁阻效应元件，其具有存储层，其中当电流流过所选择的第一和第二布线时，通过产生的磁场来存储数据;第一磁性构件，具有设置为部分地包围每个第一布线的两端，端部位于容易的磁化轴的方向上，以形成具有存储层的闭环磁路，以及具有两端的第二磁性构件，其设置为部分地包围每个第二布线，并且两端位于磁化强度轴的方向，放大沿着硬磁化轴的方向施加到存储层的磁场。第一磁性构件的每个端部被定位成比第二磁性构件的每个端部更靠近存储层。

84. 发明申请

US20050170218A1 Magnetoresistive effect element, magnetic memory and magnetic head 有权
标题翻译：磁阻效应元件，磁记忆体和磁头
公开(公告)号：US20050170218A1
公开(公告)日：2005-08-04
申请号：US11069991
申请日：2005-03-03
申请人： Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama
发明人： Tatsuya Kishi , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Katsuya Nishiyama
IPC分类号： G01R33/09 , G11B5/39 , G11C11/16 , H01F10/16 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , B32B1/00 , G11B5/64
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11C11/16 , H01F10/3268 , H01L43/08
摘要： A magnetoresistive effect element of a tunnel junction type includes a magnetic multi-layered film (1), ferromagnetic film (3) and intervening insulating film (2) such that a current flows between the magnetic multi-layered film and the ferromagnetic film, tunneling through the insulating film. The magnetic multi-layered film includes a first ferromagnetic layer, second ferromagnetic layer and anti-ferromagnetic layer inserted between the first and second ferromagnetic layers.
摘要翻译：隧道结型的磁阻效应元件包括磁性多层膜（1），铁磁膜（3）和中间绝缘膜（2），使得电流在磁性多层膜和铁磁膜之间流动，隧穿通过绝缘膜。磁性多层膜包括插入第一和第二铁磁层之间的第一铁磁层，第二铁磁层和反铁磁层。

85. 发明申请

US20050020011A1 Magnetic memory device and method of manufacturing the same 有权
公开(公告)号：US20050020011A1
公开(公告)日：2005-01-27
申请号：US10702574
申请日：2003-11-07
申请人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
发明人： Kentaro Nakajima , Minoru Amano , Tomomasa Ueda , Shigeki Takahashi
IPC分类号： H01L27/105 , C23F4/00 , G11C11/00 , G11C11/02 , H01F10/32 , H01F41/30 , H01L21/336 , H01L21/8246 , H01L27/00 , H01L27/22 , H01L29/76 , H01L31/119 , H01L43/08 , H01L43/12
CPC分类号： C23F4/00 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F41/308 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the magneto-resistive film including an insulation barrier layer and a plurality of magnetic films stacked on both sides of the insulation barrier layer, stacking a mask layer on the magneto-resistive film, performing ion etching on the magneto-resistive film, using the mask layer as a mask, thereby forming a magneto-resistive element, forming an insulation film on upper surfaces of the mask, the magneto-resistive element and the lower electrode, and etching the insulation film with an ion beam such that a side surface of the magneto-resistive element is exposed.

86. 发明授权

US06685052B1 Feeding apparatus for chip component 有权
标题翻译：芯片组件送料装置
公开(公告)号：US06685052B1
公开(公告)日：2004-02-03
申请号：US09684676
申请日：2000-10-11
申请人： Akira Nemoto , Shigeki Takahashi , Nihei Kaishita , Mitsuhiro Namura
发明人： Akira Nemoto , Shigeki Takahashi , Nihei Kaishita , Mitsuhiro Namura
IPC分类号： B23Q712
CPC分类号： B65G47/1428 , H05K13/022
摘要： A feed lever is lowered, correspondingly to the load input of a chip mounter. A rotary drum is intermittently moved through a conversion mechanism, intermittently in one direction. Chip components placed in a component accommodation chamber are aligned and discharged. When a rotation resistance larger than a predetermined value acts, a belt is slid, and breaking of a chip component is prevented.
摘要翻译：相应于芯片安装机的负载输入，进给杆下降。旋转滚筒在一个方向间歇地间歇地移动通过转换机构。放置在部件容纳室中的芯片部件对齐并排出。当大于预定值的旋转阻力作用时，皮带滑动，并且防止了切屑部件的断裂。

87. 发明授权

US06605836B2 Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information 失效
标题翻译：磁阻效应装置，磁存储装置，个人数字助理和磁再现头以及磁信息
公开(公告)号：US06605836B2
公开(公告)日：2003-08-12
申请号：US10097571
申请日：2002-03-15
申请人： Tatsuya Kishi , Shigeki Takahashi , Kentaro Nakajima , Minoru Amano , Masayuki Sagoi , Yoshiaki Saito
发明人： Tatsuya Kishi , Shigeki Takahashi , Kentaro Nakajima , Minoru Amano , Masayuki Sagoi , Yoshiaki Saito
IPC分类号： H01L31119
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/3996 , G11C11/16 , H01F10/3254 , H01L43/08 , Y10S428/90 , Y10T29/49043 , Y10T29/49048 , Y10T29/4905 , Y10T29/49052 , Y10T428/24942 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： Magnetoresistance effect devices for attaining magnetically stability and for reducing a switching magnetic field. One of the ferromagnetic layers of the magnetoresistance effect device has a plane shape in which a width of an end portions is wider than a center portion sandwiched by two end portions. The end portions are not symmetrical with respect to an easy magnetization axis or longer axis of the plane shape of ferromagnetic material layer, but are substantially rotationally symmetrical with a center of the plane shape as a pivot. The plane shape may have an S-shape where its magnetic domain is stabilized and the switching magnetic field is reduced. The magnetoresistance effect devices may be used in a magnetic memory apparatus, such as a random access memory, a personal digital assistance, a magnetic reproducing head, and a magnetic information reproducing apparatus.
摘要翻译：用于获得磁稳定性并用于减小开关磁场的磁阻效应器件。磁阻效应器件的铁磁层之一具有端部的宽度比夹在两个端部的中心部分宽的平面形状。端部相对于铁磁材料层的平面形状的易磁化轴或长轴不对称，但是以平面形状的中心作为枢轴基本上是旋转对称的。平面形状可以具有其磁畴稳定并且开关磁场减小的S形。磁阻效应器件可以用在诸如随机存取存储器，个人数字助听器，磁再现头和磁信息再现设备之类的磁存储设备中。

88. 发明授权

US06603173B1 Vertical type MOSFET 有权
标题翻译：垂直型MOSFET
公开(公告)号：US06603173B1
公开(公告)日：2003-08-05
申请号：US09391236
申请日：1999-09-07
申请人： Yoshifumi Okabe , Yoshihiko Ozeki , Shigeki Takahashi , Norihito Tokura
发明人： Yoshifumi Okabe , Yoshihiko Ozeki , Shigeki Takahashi , Norihito Tokura
IPC分类号： H01L2976
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/1095 , H01L29/4236
摘要： A vertical power MOSFET, which can improve a surge withstand voltage and a surge withstand voltage against a surge voltage from an inductance load L. The vertical power MOSFET has a plurality of unit cells. The unit cell is formed from a MOSFET that uses a p-type base layer at a sidewall of a rectangular U-groove as a channel portion. Each of the p-type base layer of each unit cell is connected each others Accordingly, it can restrain an impurity concentration of a corner portion (a portion positioned at a corner) of the rectangular p-type base layer from being decreased. Therefore, it can reduce the difference in distance from the end portion of the p-type base layer to the end portion of the depletion layer. As a result, it can improve the surge withstand voltage when a surge voltage is input from an inductance load L.
摘要翻译：一种垂直功率MOSFET，其可以提高抗电压耐受电压和抵抗来自电感负载L的浪涌电压的浪涌耐受电压。垂直功率MOSFET具有多个单元电池。单位电池由在矩形U形槽的侧壁处使用p型基底层作为沟道部分的MOSFET形成。每个单电池的p型基极层彼此连接。因此，能够抑制矩形p型基极层的角部（位于角部的部分）的杂质浓度降低。因此，可以减少与p型基底层的端部到耗尽层的端部的距离的差异。因此，当从电感负载L输入浪涌电压时，可以提高浪涌耐受电压。

89. 发明授权

US06513644B1 Apparatus and method for aligning parts 失效
标题翻译：对准零件的装置和方法
公开(公告)号：US06513644B1
公开(公告)日：2003-02-04
申请号：US09109407
申请日：1998-07-02
申请人： Shigeki Takahashi , Nihei Kaishita
发明人： Shigeki Takahashi , Nihei Kaishita
IPC分类号： B65G4714
CPC分类号： H05K13/003
摘要： A subject part-aligning apparatus has a simple structure and causes less damage to chip parts, and operates well even if a chip discharge passage thereof is clogged or overflows with the chip parts. The apparatus has a part-holding chamber for accommodating a number of chip parts. An arc-shaped chute groove is formed in the inner surface of the bottom of the part-holding chamber to orient the chip parts in a given direction and to slidably guide the chips. A gate port is formed at the lower end of the chute groove to permit the chip parts sliding downward in a given orientation along the chute groove to pass in series (e.g., one by one). The discharge passage is formed to be tangential to the chute groove to align the passed chip parts in a line and to discharge the chip parts. A rotary impeller having blades is mounted in the part-holding chamber. The blades urge any chip part halted in an abnormal orientation in the gate port toward a direction opposite to the direction in which the chips are discharged.
摘要翻译：对象零件调整装置具有简单的结构，对芯片部件造成的损坏较小，即使其芯片排出通道堵塞或芯片部件溢出，也能够良好地运行。该装置具有容纳多个芯片部件的部分保持室。在所述部件保持室的底部的内表面中形成弧形斜槽，以沿着给定方向定位所述芯片部件，并且可滑动地引导所述芯片。门槽口形成在斜槽槽的下端，以允许芯片部件沿着斜槽沿给定方向向下滑动以串联（例如一个接一个地）通过。排出通道形成为与滑槽相切，以使经过的芯片部分在一条线上对准并排出芯片部件。具有叶片的旋转叶轮安装在部分保持室中。叶片促使任何芯片部分在门口中朝向与芯片排出方向相反的方向以异常方向停止。

90. 发明授权

US06380841B2 Variable resistor 有权
公开(公告)号：US06380841B2
公开(公告)日：2002-04-30
申请号：US09754427
申请日：2001-01-04
申请人： Fumitoshi Masuda , Shigeki Takahashi , Toru Ogata , Tomohisa Ogawa , Minoru Yamaguchi , Yutaka Kitamura
发明人： Fumitoshi Masuda , Shigeki Takahashi , Toru Ogata , Tomohisa Ogawa , Minoru Yamaguchi , Yutaka Kitamura
IPC分类号： H01C1032
CPC分类号： H01C10/32
摘要： A variable resistor is constructed to reliably seal the space between a rotor and a substrate without insert-molding the substrate into a case, and to be produced at a very low cost. This variable resistor includes a hollow square-prism shaped case which is open at the top and the bottom, a substrate which is fitted into the lower opening of the case, and on the top surface of which a collector electrode and an arcuate resistor are provided, a rotor rotatably fitted into the upper opening of the case, a slider mounted on the bottom surface of the rotor and making sliding contact with the collector electrode and the resistor, an annular packing member disposed between the rotor and the substrate for sealing the space therebetween, terminals mounted on the substrate and electrically connected to the resistor and the collector electrode, and a metallic cover.

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