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81. 发明申请

US20050196961A1 Method for forming a semiconductor device having metal silicide 审中-公开
标题翻译：用于形成具有金属硅化物的半导体器件的方法
公开(公告)号：US20050196961A1
公开(公告)日：2005-09-08
申请号：US10795847
申请日：2004-03-08
申请人： Da Zhang , Olubunmi Adetutu , Shahid Rauf , Peter Ventzek
发明人： Da Zhang , Olubunmi Adetutu , Shahid Rauf , Peter Ventzek
IPC分类号： H01L21/336 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/28518 , H01L29/665 , H01L29/78
摘要： In one embodiment, a top surface of a semiconductor device (18) is amorphized in a tool (1). A metal is deposited over the semiconductor substrate using the same tool. In one embodiment, the same chambers are used. In an embodiment, the tool is a sputtering tool, such as a physical vapor deposition (PVD). The semiconductor substrate may be annealed to form a metal silicide (122) over at least a portion of the semiconductor device that includes silicon.
摘要翻译：在一个实施例中，半导体器件（18）的顶表面在工具（1）中非晶化。使用相同的工具在半导体衬底上沉积金属。在一个实施例中，使用相同的腔室。在一个实施例中，该工具是溅射工具，例如物理气相沉积（PVD）。半导体衬底可以被退火以在包括硅的半导体器件的至少一部分上形成金属硅化物（122）。

82. 发明申请

US20090279226A1 THIN-FILM CAPACITOR WITH A FIELD MODIFICATION LAYER 有权
标题翻译：具有现场修改层的薄膜电容器
公开(公告)号：US20090279226A1
公开(公告)日：2009-11-12
申请号：US12431288
申请日：2009-04-28
申请人： Douglas R. Roberts , Eric D. Luckowski , Shahid Rauf , Peter L.G. Ventzek
发明人： Douglas R. Roberts , Eric D. Luckowski , Shahid Rauf , Peter L.G. Ventzek
IPC分类号： H01G4/06 , H01G2/00 , H01G4/005
CPC分类号： H01L28/40 , H01L28/57
摘要： A method for forming a capacitor includes providing a metal-containing bottom electrode, forming a capacitor insulator over the metal-containing bottom electrode, forming a metal-containing top electrode over the capacitor insulator, and forming a dielectric-containing field modification layer over the capacitor insulator and at least partially surrounding the metal-containing top electrode. Forming the dielectric-containing field modification layer may include oxidizing a sidewall of the metal-containing field modification layer. A barrier layer may be formed over the capacitor insulator prior to forming the metal-containing top electrode.
摘要翻译：一种形成电容器的方法包括提供含金属的底部电极，在含金属的底部电极上形成电容器绝缘体，在电容器绝缘体之上形成含金属的顶部电极，并在电容器绝缘体并且至少部分地围绕含金属的顶部电极。形成含电介质的场改性层可以包括氧化含金属的场改性层的侧壁。在形成含金属的顶部电极之前，可以在电容器绝缘体之上形成阻挡层。

83. 发明申请

US20080113505A1 METHOD OF FORMING A THROUGH-SUBSTRATE VIA 审中-公开
标题翻译：形成通过基底的方法
公开(公告)号：US20080113505A1
公开(公告)日：2008-05-15
申请号：US11558988
申请日：2006-11-13
申请人： Terry G. Sparks , Syed M. Alam , Ritwik Chatterjee , Shahid Rauf
发明人： Terry G. Sparks , Syed M. Alam , Ritwik Chatterjee , Shahid Rauf
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A method for achieving a through-substrate via through a substrate having active circuitry on a first major surface begins by forming a hole into the substrate through the first major surface. The hole is lined with a conductive layer. A dielectric layer is deposited over the conductive layer. This deposition is performed in a manner that causes the dielectric layer to be substantially conformal. Conductive material is formed over first dielectric layer. A second major surface of the substrate is etched to expose the conductive material.
摘要翻译：通过在第一主表面上具有有源电路的基板实现贯通基板通孔的方法首先通过第一主表面在基板中形成孔。孔内衬有导电层。介电层沉积在导电层上。这种沉积以使介电层基本上保形的方式进行。导电材料形成在第一介电层上。蚀刻衬底的第二主表面以暴露导电材料。

84. 发明授权

US07335602B2 Charge-free layer by layer etching of dielectrics 失效
标题翻译：无电荷逐层蚀刻电介质
公开(公告)号：US07335602B2
公开(公告)日：2008-02-26
申请号：US11333844
申请日：2006-01-18
申请人： Shahid Rauf , Peter L. G. Ventzek
发明人： Shahid Rauf , Peter L. G. Ventzek
IPC分类号： H01L21/302
CPC分类号： H01J37/32357 , H01J37/32449 , H01L21/30655 , H01L21/31116
摘要： A method for etching a dielectric film is provided herein. In accordance with the method, a device (201) is provided which comprises a first chamber (203) equipped with a first gas supply (209) and a second chamber (205) equipped with a second gas supply (215), wherein the second chamber is in communication with the first chamber by way of an acceleration grid (211) having a variable potential. The gas flow into the plasma chamber is oscillated between a first state in which the gas flow into the first chamber has the composition f11 and the gas flow into the second chamber has the composition f21, and a second state in which the gas flow into the first chamber has the composition f12 and the gas flow into the second chamber has the composition f22. The potential applied to the acceleration grid is oscillated such that the voltage applied to the grid is V1 when the gas flow into the plasma chamber is in the first state, and the voltage applied to the grid is V2 when the gas flow into the plasma chamber is in the second state.
摘要翻译：本发明提供蚀刻电介质膜的方法。根据该方法，提供一种装置（201），其包括配备有第一气体供应（209）的第一室（203）和装备有第二气体供应（215）的第二室（205），其中第二室室通过具有可变电位的加速栅（211）与第一室连通。进入等离子体室的气体流动在第一状态中，其中进入第一腔室的气体流具有组成f 11，并且进入第二腔室的气体流动具有组成f 21 并且第二状态，其中流入第一室的气体具有组成f 12，并且进入第二室的气流具有组成f 22，。施加到加速电网的电位振荡，使得当进入等离子体室的气体处于第一状态时施加到电网的电压为V 1，并且施加到电网的电压为V 当进入等离子体室的气体处于第二状态时，<2>。

85. 发明申请

US20070163994A1 Charge-free layer by layer etching of dielectrics 失效
标题翻译：无电荷逐层蚀刻电介质
公开(公告)号：US20070163994A1
公开(公告)日：2007-07-19
申请号：US11333844
申请日：2006-01-18
申请人： Shahid Rauf , Peter Ventzek
发明人： Shahid Rauf , Peter Ventzek
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32357 , H01J37/32449 , H01L21/30655 , H01L21/31116
摘要： A method for etching a dielectric film is provided herein. In accordance with the method, a device (201) is provided which comprises a first chamber (203) equipped with a first gas supply (209) and a second chamber (205) equipped with a second gas supply (215), wherein the second chamber is in communication with the first chamber by way of an acceleration grid (211) having a variable potential. The gas flow into the plasma chamber is oscillated between a first state in which the gas flow into the first chamber has the composition ƒ11 and the gas flow into the second chamber has the composition ƒ21, and a second state in which the gas flow into the first chamber has the composition ƒ12 and the gas flow into the second chamber has the composition ƒ22. The potential applied to the acceleration grid is oscillated such that the voltage applied to the grid is V1 when the gas flow into the plasma chamber is in the first state, and the voltage applied to the grid is V2 when the gas flow into the plasma chamber is in the second state.
摘要翻译：本发明提供蚀刻电介质膜的方法。根据该方法，提供一种装置（201），其包括配备有第一气体供应（209）的第一室（203）和装备有第二气体供应（215）的第二室（205），其中第二室室通过具有可变电位的加速栅（211）与第一室连通。进入等离子体室的气体流动在第一状态中，其中进入第一腔室的气体流具有组成f 11，并且进入第二腔室的气体流动具有组成f 21 并且第二状态，其中流入第一室的气体具有组成f 12，并且进入第二室的气流具有组成f 22，。施加到加速电网的电位振荡，使得当进入等离子体室的气体处于第一状态时施加到电网的电压为V 1，并且施加到电网的电压为V 当进入等离子体室的气体处于第二状态时，<2>。

86. 发明申请

US20070155113A1 Thin-film capacitor with a field modification layer and methods for forming the same 有权
标题翻译：具有场改性层的薄膜电容器及其形成方法
公开(公告)号：US20070155113A1
公开(公告)日：2007-07-05
申请号：US11326524
申请日：2006-01-04
申请人： Douglas Roberts , Eric Luckowski , Shahid Rauf , Peter Ventzek
发明人： Douglas Roberts , Eric Luckowski , Shahid Rauf , Peter Ventzek
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L28/40 , H01L28/57
摘要： A method for forming a capacitor includes providing a metal-containing bottom electrode, forming a capacitor insulator over the metal-containing bottom electrode, forming a metal-containing top electrode over the capacitor insulator, and forming a dielectric-containing field modification layer over the capacitor insulator and at least partially surrounding the metal-containing top electrode. Forming the dielectric-containing field modification layer may include oxidizing a sidewall of the metal-containing field modification layer. A barrier layer may be formed over the capacitor insulator prior to forming the metal-containing top electrode.
摘要翻译：一种形成电容器的方法包括提供含金属的底部电极，在含金属的底部电极上形成电容器绝缘体，在电容器绝缘体之上形成含金属的顶部电极，并在电容器绝缘体并且至少部分地围绕含金属的顶部电极。形成含电介质的场改性层可以包括氧化含金属的场改性层的侧壁。在形成含金属的顶部电极之前，可以在电容器绝缘体上形成阻挡层。

87. 发明授权

US06969568B2 Method for etching a quartz layer in a photoresistless semiconductor mask 有权
标题翻译：在无光致抗蚀剂半导体掩模中蚀刻石英层的方法
公开(公告)号：US06969568B2
公开(公告)日：2005-11-29
申请号：US10766205
申请日：2004-01-28
申请人： Shahid Rauf , Peter L. G. Ventzek , Wei E. Wu
发明人： Shahid Rauf , Peter L. G. Ventzek , Wei E. Wu
IPC分类号： G03F1/00 , H01L21/302 , H01L21/311
CPC分类号： G03F1/34 , H01L21/31116
摘要： A chromeless phase lithography mask (30) that does not require photoresist to manufacture has a quartz substrate (32) is etched by using a plasma (38) containing one of a nitrogen augmented hydro-fluorocarbon oxygen mixture and a nitrogen augmented fluorocarbon oxygen mixture. Various hydro-fluorocarbons or fluorocarbons may be used. The nitrogen addition results in etched openings in the quartz substrate that have substantially vertical sidewalls in a uniform manner across the substrate. Surface roughness is minimized and edges of the openings are well-defined with minimal rounding. The etch rate is rendered controllable by reducing bias power without degrading a desired vertical sidewall profile.
摘要翻译：不需要光致抗蚀剂的无铬相光刻掩模（30）通过使用包含氮增强的氢氟烃氧混合物和氮增强氟碳氧混合物之一的等离子体（38）进行蚀刻。可以使用各种氢氟烃或碳氟化合物。氮气添加导致在石英衬底中蚀刻的开口具有穿过衬底的均匀方式的基本上垂直的侧壁。表面粗糙度最小化，并且开口的边缘被很好地限定在最小的四舍五入。通过降低偏置功率而不降低期望的垂直侧壁轮廓，使蚀刻速率变得可控。

88. 发明申请

US20150155193A1 ELECTROSTATIC CHUCK WITH VARIABLE PIXELATED MAGNETIC FIELD 审中-公开
标题翻译：具有可变像素磁场的静电卡盘
公开(公告)号：US20150155193A1
公开(公告)日：2015-06-04
申请号：US14094601
申请日：2013-12-02
申请人： Chih-Hsun Hsu , Tza-Jing Gung , Benjamin Schwarz , Shahid Rauf , Ankur Agarwal , Vijay D. Parkhe , Michael D. Willwerth , Zhiqiang Guo
发明人： Chih-Hsun Hsu , Tza-Jing Gung , Benjamin Schwarz , Shahid Rauf , Ankur Agarwal , Vijay D. Parkhe , Michael D. Willwerth , Zhiqiang Guo
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/6833 , H01J37/3266 , H01J37/32715
摘要： Electrostatic chucks with variable pixelated magnetic field are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A plurality of electromagnets is disposed in the base, the plurality of electromagnets configured to provide pixelated magnetic field tuning capability for the ESC.
摘要翻译：描述了具有可变像素化磁场的静电卡盘。例如，静电卡盘（ESC）包括具有前表面和后表面的陶瓷板，前表面用于支撑晶片或基板。基座耦合到陶瓷板的背面。多个电磁铁设置在基座中，多个电磁铁构造成为ESC提供像素化的磁场调谐能力。

89. 发明授权

US08980760B2 Methods and apparatus for controlling plasma in a process chamber 有权
标题翻译：用于控制处理室中的等离子体的方法和装置
公开(公告)号：US08980760B2
公开(公告)日：2015-03-17
申请号：US13442478
申请日：2012-04-09
申请人： Ankur Agarwal , Ajit Balakrishna , Shahid Rauf
发明人： Ankur Agarwal , Ajit Balakrishna , Shahid Rauf
IPC分类号： H01L21/302 , H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/32137 , H01J37/32165 , H05H2001/4682
摘要： Methods and apparatus for controlling a plasma are provided herein. In some embodiments, a method may include supplying a first RF signal having a first frequency and a first period from an RF power source to a first electrode, wherein the first period is a first integer number of first cycles at the first frequency; supplying a second RF signal having a second frequency and a second period from the RF power source to the first electrode, wherein the second period is a second integer number of second cycles at the second frequency and wherein a first multiplicative product of the first frequency and the first integer number is equal to a second multiplicative product of the second frequency and the second integer number; and controlling the phase between the first and second periods to control an ion energy distribution of the plasma formed in a process chamber.
摘要翻译：本文提供了用于控制等离子体的方法和装置。在一些实施例中，一种方法可以包括从RF功率源向第一电极提供具有第一频率和第一周期的第一RF信号，其中第一周期是第一频率的第一整数个第一周期; 提供具有从RF电源到第一电极的第二频率和第二周期的第二RF信号，其中第二周期是第二频率的第二整数倍的第二周期，并且其中第一频率和第二频率的第一乘法乘积第一整数等于第二频率和第二整数的第二乘法乘积; 以及控制第一和第二周期之间的相位，以控制在处理室中形成的等离子体的离子能量分布。

90. 发明授权

US07799661B2 Electrical sensor for real-time feedback control of plasma nitridation 有权
标题翻译：电传感器用于等离子体氮化的实时反馈控制
公开(公告)号：US07799661B2
公开(公告)日：2010-09-21
申请号：US11324425
申请日：2006-01-03
申请人： Shahid Rauf
发明人： Shahid Rauf
IPC分类号： H01L21/322 , H01L21/00 , H01L21/26
CPC分类号： C23C8/36 , C23C4/134
摘要： A device (101) for controlling the treatment of a substrate (102) with a plasma (103) is provided which comprises (a) a plasma chamber (104) adapted to generate a plasma (103); (b) a sensor (113) equipped with first (115) and second (117) electrodes that are exposed to the plasma generated within the chamber, said sensor being adapted to (i) apply a first low frequency voltage V1 to the first electrode, (ii) apply a plurality of high frequency voltages V2 . . . Vn to the first electrode, where n≧2, and (iii) measure the respective currents I1 . . . In flowing through the second electrode during application of each of the voltages V1 . . . Vn, respectively; and (c) a data processing device (121) adapted to determine the densities of a plurality of ion species based on currents I1 . . . In and on a mathematical model or on calibration data relating to the plasma chamber.
摘要翻译：提供一种用于控制用等离子体（103）处理衬底（102）的装置（101），其包括：（a）适于产生等离子体的等离子体室（104）; （b）装备有暴露于室内产生的等离子体的第一（115）和第二（117）电极的传感器（113），所述传感器适于（i）将第一低频电压V1施加到第一电极，（ii）施加多个高频电压V2。。。 Vn到第一电极，其中n≥2，以及（iii）测量各个电流I1。。。在施加每个电压V1期间流过第二电极。。。 Vn; 和（c）适于基于电流I1确定多个离子种类的密度的数据处理装置（121）。。。数学模型或与等离子体腔相关的校准数据。

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