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81. 发明授权

US08372687B2 System, method and apparatus for forming multiple layers in a single process chamber 有权
标题翻译：用于在单个处理室中形成多个层的系统，方法和装置
公开(公告)号：US08372687B2
公开(公告)日：2013-02-12
申请号：US12932114
申请日：2011-02-16
申请人： Aiguo Feng
发明人： Aiguo Feng
IPC分类号： H01L21/06 , H01L21/00 , H01L21/36 , H01L29/08
CPC分类号： H01L31/0322 , C23C14/5866 , H01L21/0237 , H01L21/02568 , H01L21/02614 , Y02E10/541 , Y02P70/521
摘要： A method for forming multiple layers in a single process chamber includes placing a substrate in the process chamber having multiple processing sources and iteratively forming a copper indium gallium selenium (CIGS) including forming multiple relatively thin CIGS layers including forming a copper indium gallium (CIG) layer on the substrate, the CIG layer having a thickness of between less than about 50 angstroms and about 200 angstroms, forming a selenium layer on the CIG layer, the selenium layer having a thickness of between less than about 50 angstroms and about 200 angstroms and heating the substrate, the CIG layer and the selenium layer. A processing chamber system is also disclosed.
摘要翻译：在单个处理室中形成多层的方法包括将衬底放置在具有多个处理源的处理室中并且迭代地形成铜铟镓硒（CIGS），其包括形成多个相对较薄的CIGS层，包括形成铜铟镓（CIG）所述CIG层具有小于约50埃至约200埃的厚度，在所述CIG层上形成硒层，所述硒层具有介于小于约50埃至约200埃之间的厚度，以及加热基底，CIG层和硒层。还公开了一种处理室系统。

82. 发明授权

US08361892B2 Multiple precursor showerhead with by-pass ports 有权
标题翻译：带有旁路端口的多个前身淋浴头
公开(公告)号：US08361892B2
公开(公告)日：2013-01-29
申请号：US12815557
申请日：2010-06-15
申请人： Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： H01L21/36
CPC分类号： B05B1/18 , C23C16/45519 , C23C16/45565 , C23C16/52 , C30B25/14 , H01L21/67115
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，该设备包括具有分离的入口和通道的喷头的处理室，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。在一个实施例中，喷头包括一个或多个清洁气体导管，其构造成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。在一个实施例中，喷头包括多个计量端口，其配置成在旁路处理气体通道的同时将清洁气体直接输送到室的处理容积中。结果，与仅通过处理气体通道将清洁气体引入室中相比，可以更有效和有效地清洁处理室部件。

83. 发明授权

US08357598B2 Method for manufacturing antenna and method for manufacturing semiconductor device 有权
标题翻译：制造天线的方法及制造半导体器件的方法
公开(公告)号：US08357598B2
公开(公告)日：2013-01-22
申请号：US13196133
申请日：2011-08-02
申请人： Tomoyuki Aoki , Daiki Yamada
发明人： Tomoyuki Aoki , Daiki Yamada
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L27/1266 , H01L21/6835 , H01L21/6836 , H01L21/76826 , H01L21/76856 , H01L23/5227 , H01L24/83 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L2221/68327 , H01L2221/6834 , H01L2221/6835 , H01L2221/68363 , H01L2223/6677 , H01L2224/2929 , H01L2224/293 , H01L2224/83851 , H01L2924/00011 , H01L2924/01012 , H01L2924/01067 , H01L2924/01068 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/3011 , H01L2924/3025 , H01Q1/2225 , H05K1/095 , H05K3/02 , H01L2224/29075 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides an antenna with low resistance and a semiconductor device having an antenna whose communication distance is improved. A fluid containing conductive particles is applied over an object. After curing the fluid containing the conductive particles, the fluid is irradiated with a laser to form an antenna. As a method for applying the fluid containing the conductive particles, screen printing, spin coating, dipping, or a droplet discharging method is used. Further, a solid laser having a wavelength of 1 nm or more and 380 nm or less is used as the laser.
摘要翻译：本发明提供一种具有低电阻的天线和具有提高通信距离的天线的半导体器件。含有导电颗粒的流体被施加在物体上。在固化含有导电颗粒的流体之后，用激光照射流体以形成天线。作为施加含有导电性粒子的流体的方法，使用丝网印刷，旋涂，浸渍或液滴喷射法。此外，使用波长为1nm以上且380nm以下的固体激光器作为激光。

84. 发明申请

US20120319101A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120319101A1
公开(公告)日：2012-12-20
申请号：US13484742
申请日：2012-05-31
申请人： Shinya SASAGAWA , Hiroshi FUJIKI , Yoshinori IEDA
发明人： Shinya SASAGAWA , Hiroshi FUJIKI , Yoshinori IEDA
IPC分类号： H01L21/36 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/02178 , H01L21/02554 , H01L21/02565 , H01L21/47573 , H01L29/41733 , H01L29/66742 , H01L29/7869
摘要： A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film, an etching mask is formed over the second insulating film, an opening portion exposing the electrode film is formed by etching a portion of the first insulating film and a portion of the second insulating film, the opening portion exposing the electrode film is exposed to argon plasma, the etching mask is removed, and a conductive film is formed in the opening portion exposing the electrode film. The first insulating film is an insulating film whose oxygen is partly released by heating. The second insulating film is less easily etched than the first insulating film and has a lower gas-permeability than the first insulating film.
摘要翻译：与氧化物半导体膜和第二绝缘膜接触的第一绝缘膜依次层叠在包含氧化物半导体膜的晶体管的电极膜上，在第二绝缘膜上形成蚀刻掩模，通过蚀刻第一绝缘膜的一部分和第二绝缘膜的一部分形成电极膜，将暴露于电极膜的开口部暴露于氩等离子体中，除去蚀刻掩模，并且在开口中形成导电膜部分暴露电极膜。第一绝缘膜是其氧气通过加热部分释放的绝缘膜。第二绝缘膜比第一绝缘膜不易蚀刻，并且具有比第一绝缘膜更低的透气性。

85. 发明授权

US08318575B2 Compressive polycrystalline silicon film and method of manufacture thereof 有权
标题翻译：压缩性多晶硅膜及其制造方法
公开(公告)号：US08318575B2
公开(公告)日：2012-11-27
申请号：US13022411
申请日：2011-02-07
申请人： Wolfgang Lehnert , Stefan Pompl , Markus Meyer
发明人： Wolfgang Lehnert , Stefan Pompl , Markus Meyer
IPC分类号： H01L21/20 , H01L21/00 , H01L21/36
CPC分类号： H01L29/04 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L21/28035 , H01L21/763 , H01L21/823828 , H01L28/60 , H01L29/16 , H01L29/51 , H01L29/7833 , H01L29/945
摘要： In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C.
摘要翻译：公开了一种形成压缩多晶半导体材料层的方法。该方法包括在衬底上形成多晶半导体种子层并通过在低于600℃的温度的无定形工艺条件下将硅直接沉积在多晶硅籽晶层上形成硅层。

86. 发明申请

US20120295399A1 OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME 审中-公开
标题翻译：基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
公开(公告)号：US20120295399A1
公开(公告)日：2012-11-22
申请号：US13559959
申请日：2012-07-27
申请人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
发明人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
IPC分类号： H01L21/336 , C09K13/06 , C09K13/08 , H01L21/36
CPC分类号： C09K13/06 , H01L21/467 , H01L29/7869
摘要： Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
摘要翻译：提供一种锌（Zn）氧化物基薄膜晶体管，其可以包括栅极，栅极上的栅极绝缘层，包含氧化锌的沟道，并且可以在栅极绝缘层的一部分上，以及源极和漏极接触渠道的各边。锌（Zn）氧化物基薄膜晶体管还可以包括在源极和漏极之间的沟道中的凹陷，并且可以使用氧化锌基蚀刻剂来形成凹陷。

87. 发明授权

US08304327B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08304327B2
公开(公告)日：2012-11-06
申请号：US12712397
申请日：2010-02-25
申请人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi
发明人： Taketomi Asami , Mitsuhiro Ichijo , Satoshi Toriumi
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/78678 , H01L21/0237 , H01L21/02422 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02672 , H01L27/12 , H01L27/1277 , H01L27/1285 , H01L27/3244 , H01L29/66757 , H01L29/66765 , H01L29/78675
摘要： At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.
摘要翻译：目前，为了得到满意的膜，在各成膜室中进行通过非晶硅膜的基膜的成膜工序。当在具有上述成膜条件的单个成膜室中进行通过非晶硅膜的基膜的连续形成时，在结晶过程中不能充分结晶。通过使用用氢稀释的硅烷气体形成非晶硅膜，即使在单一成膜室中通过非晶硅膜连续形成基底膜，也在结晶过程中充分获得结晶。

88. 发明申请

US20120265122A1 Production of Graphene and Nanoparticle Catalysts Supposrted on Graphen Using Laser Radiation 有权
标题翻译：使用激光辐射制备Graphen的石墨烯和纳米粒子催化剂
公开(公告)号：US20120265122A1
公开(公告)日：2012-10-18
申请号：US13514671
申请日：2010-12-10
申请人： M. Samy El-Shall , Victor Abdelsayed , Saud I. Al-Resayes , Zeid Abdullah M. Alothman
发明人： M. Samy El-Shall , Victor Abdelsayed , Saud I. Al-Resayes , Zeid Abdullah M. Alothman
IPC分类号： A61M37/00 , H01L33/34 , H05B6/00 , B23K26/00 , F27D3/00 , C01B31/02 , H01L31/04 , H01L31/0224 , B01D3/00 , B01J37/34 , H01L21/20 , H01L21/36 , H01L31/028 , B82Y30/00 , B82Y40/00 , B82Y5/00
CPC分类号： H01L33/343 , A61B18/20 , A61K41/0052 , A61N5/062 , A61N2005/067 , B01J21/185 , B01J23/8913 , B01J35/0013 , B01J37/16 , B01J37/349 , B82Y30/00 , B82Y40/00 , C01B3/40 , C01B32/192 , C01B2203/1041 , C01B2203/1064 , C01B2203/1082 , C02F1/14 , C02F2103/08 , H01L21/02527 , H01L21/02628 , H01L21/02656 , H01L29/66742 , H01L29/78684 , H01L31/022466 , H01L31/035281 , H01L31/0392 , H01L31/20 , H01L33/0054 , Y02A20/128 , Y02A20/129 , Y02A20/142 , Y02A20/212 , Y02E10/50 , Y02P20/52
摘要： Methods and apparatuses to produce graphene and nanoparticle catalysts supported on graphene without the use of reducing agents, and with the concomitant production of heat, are provided. The methods and apparatuses employ radiant energy to reduce (deoxygenate) graphite oxide (GO) to graphene, or to reduce a mixture of GO plus one or more metals to to produce nanoparticle catalysts supported on graphene. Methods and systems to generate and utilize heat that is produced by irradiating GO, graphene and their metal and semiconductor nanocomposites with visible, infrared and/or ultraviolet radiation, e.g. using sunlight, lasers, etc. are also provided.
摘要翻译：提供了在不使用还原剂的情况下生产在石墨烯上并且伴随产生热量的石墨烯和纳米颗粒催化剂的生产方法和装置。所述方法和装置使用辐射能将氧化石墨氧化物（GO）还原成石墨烯，或者减少GO加上一种或多种金属的混合物以产生负载在石墨烯上的纳米颗粒催化剂。产生和利用通过用可见光，红外和/或紫外辐射照射GO，石墨烯及其金属和半导体纳米复合材料的方法产生和利用热的方法和系统。还提供使用阳光，激光等。

89. 发明授权

US08288253B1 InxGa1-xAsYP1-Y quaternary etch stop for improved chemical resistivity of gallium arsenide field effect transistors 有权
标题翻译： InxGa1-xAsYP1-Y四次蚀刻停止，用于提高砷化镓场效应晶体管的化学电阻率
公开(公告)号：US08288253B1
公开(公告)日：2012-10-16
申请号：US13173006
申请日：2011-06-30
申请人： Allen W. Hanson , Anthony Kaleta
发明人： Allen W. Hanson , Anthony Kaleta
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/30612 , H01L29/201 , H01L29/66462
摘要： A process for fabricating a semiconductor device. The process including (a) growing a channel layer on a buffer layer, (b) growing a barrier layer on the channel layer, (c) epitaxially growing a quaternary etch-stop layer on the barrier layer, (d) growing a first contact layer on the quaternary etch-stop layer, (e) growing a second contact layer on the first contact layer, (f) etching portions of the second contact layer to reveal a first recess surface, and (g) etching portions of the first contact layer to reveal a second recess surface. The second contact layer may be a highly doped contact layer. The second recess surface generally forms a gate region. The first and the second contact layers have a first etch rate and the quaternary etch-stop layer has a second etch rate in a chosen first etch chemistry.
摘要翻译：一种制造半导体器件的工艺。该方法包括（a）在缓冲层上生长通道层，（b）在沟道层上生长阻挡层，（c）在阻挡层上外延生长四分之一蚀刻停止层，（d）生长第一接触（e）在第一接触层上生长第二接触层，（f）蚀刻第二接触层的部分以露出第一凹部表面，以及（g）蚀刻第一接触部分层以露出第二凹槽表面。第二接触层可以是高度掺杂的接触层。第二凹面通常形成栅极区域。第一和第二接触层具有第一蚀刻速率，并且四次蚀刻停止层在所选择的第一蚀刻化学中具有第二蚀刻速率。

90. 发明授权

US08247312B2 Methods for printing an ink on a textured wafer surface 失效
标题翻译：在纹理晶片表面上印刷油墨的方法
公开(公告)号：US08247312B2
公开(公告)日：2012-08-21
申请号：US12108888
申请日：2008-04-24
申请人： Malcolm Abbott , Maxim Kelman , Karel Vanheusden
发明人： Malcolm Abbott , Maxim Kelman , Karel Vanheusden
IPC分类号： H01L21/36
CPC分类号： H01L21/02532 , H01L21/0243 , H01L21/02601 , H01L21/02628 , H01L21/228 , H01L29/34 , H01L31/02168 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of printing an ink on a wafer surface configured with a set of non-rounded peaks and a set of non-rounded valleys is disclosed. The method includes exposing the wafer including at least some non-rounded peaks and at least some of the non-rounded valleys in a region to an etchant. The method further includes depositing the ink on the region, wherein a set of rounded peaks and a set of rounded valleys are formed.
摘要翻译：公开了一种在配置有一组非圆形峰和一组非圆形谷的晶片表面上印刷油墨的方法。该方法包括使晶片包括至少一些非圆形峰值和区域中的至少一些非圆形谷部至蚀刻剂。该方法还包括在该区域上沉积墨，其中形成一组圆形峰和一组圆形谷。

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