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1. 发明申请

US20140063921A1 METHOD AND SYSTEM FOR PROVIDING INVERTED DUAL MAGNETIC TUNNELING JUNCTION ELEMENTS 有权
标题翻译：用于提供反转双磁性连接元件的方法和系统
公开(公告)号：US20140063921A1
公开(公告)日：2014-03-06
申请号：US13045528
申请日：2011-03-11
申请人： Xueti Tang , Jing Wu
发明人： Xueti Tang , Jing Wu
IPC分类号： G11C11/16 , H01L43/12
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161 , H01L43/12
摘要： A method and system for providing a magnetic junction residing on a substrate and usable in a magnetic device are described. The magnetic junction includes a first pinned layer, a first nonmagnetic spacer layer having a first thickness, a free layer, a second nonmagnetic spacer layer having a second thickness greater than the first thickness, and a second pinned layer. The first nonmagnetic spacer layer resides between the pinned layer and the free layer. The first pinned layer resides between the free layer and the substrate. The second nonmagnetic spacer layer is between the free layer and the second pinned layer. Further, the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供驻留在基板上并可用于磁性装置中的磁性结的方法和系统。磁结包括第一被钉扎层，具有第一厚度的第一非磁性间隔层，具有大于第一厚度的第二厚度的自由层，第二非磁性间隔层，以及第二钉扎层。第一非磁性间隔层位于被钉扎层和自由层之间。第一被钉扎层位于自由层和基底之间。第二非磁性间隔层位于自由层和第二被钉扎层之间。此外，磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

2. 发明授权

US08625339B2 Multi-cell per memory-bit circuit and method 有权
标题翻译：多单元每个存储器位电路和方法
公开(公告)号：US08625339B2
公开(公告)日：2014-01-07
申请号：US13083854
申请日：2011-04-11
申请人： Adrian E. Ong
发明人： Adrian E. Ong
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C13/0026 , G11C13/0028 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2029/0411
摘要： A write circuit is adapted to provide a same logical bit to each of a multitude of memory cells for storage. Each of the multitude of memory cells stores either the bit or a complement of the bit in response to the write circuit. A read circuit is adapted to receive the bits stored in the multitude of memory cells and to generate an output value defined by the stored bits in accordance with a predefined rule. The predefined rule may be characterized by a statistical mode of the bits stored in the plurality of memory cells. Storage errors in a minority of the multitude of memory cells may be ignored at the cost of lower memory density. The predefined rule may be characterized by a first weight assigned to bits 1 and a second weight assigned to bits 0.
摘要翻译：写入电路适于向多个用于存储的存储器单元中的每一个提供相同的逻辑位。多个存储器单元中的每一个都存储响应于写入电路的位或位的补码。读取电路适于接收存储在多个存储器单元中的位，并且根据预定义的规则生成由存储的位定义的输出值。可以通过存储在多个存储器单元中的位的统计模式来表征预定规则。少量存储器单元中的存储错误可能以较低的存储器密度为代价而被忽略。预定义规则可以由分配给比特1的第一权重和分配给比特0的第二权重来表征。

3. 发明授权

US08456898B2 Magnetic element having perpendicular anisotropy with enhanced efficiency 有权
标题翻译：磁性元件具有垂直各向异性，效率提高
公开(公告)号：US08456898B2
公开(公告)日：2013-06-04
申请号：US13311308
申请日：2011-12-05
申请人： Eugene Youjun Chen , Shengyuan Wang
发明人： Eugene Youjun Chen , Shengyuan Wang
IPC分类号： G11B5/39 , H01F10/32 , G11C11/15 , G11B5/127 , H01L43/08 , H01L43/12
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/1278 , G11B5/39 , G11C11/15 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1121 , Y10T428/1143
摘要： Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.
摘要翻译：与包括具有固定层磁化和垂直各向异性的固定层的磁性元件相关联的技术和磁性装置，非磁性间隔层和具有可变自由层磁化和垂直各向异性的自由层。

4. 发明授权

US08432009B2 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories 有权
标题翻译：用于提供具有用于自旋转移转矩存储器中的插入层的磁性层的方法和系统
公开(公告)号：US08432009B2
公开(公告)日：2013-04-30
申请号：US13011849
申请日：2011-01-21
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each insertion layer includes at least one of Cr, Ta, Ti, W, Ru, V, Cu, Mg, aluminum oxide, and MgO. The magnetic layers are exchange coupled.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁结的方法和系统。磁结包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。被钉扎层和自由层中的至少一个包括磁性子结构。磁性子结构包括与至少一个插入层交错的至少两个磁性层。每个插入层包括Cr，Ta，Ti，W，Ru，V，Cu，Mg，氧化铝和MgO中的至少一种。磁层交换耦合。

5. 发明授权

US08422285B2 Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories 有权
标题翻译：用于提供可用于自旋转移转矩磁存储器中的双磁隧道结的方法和系统
公开(公告)号：US08422285B2
公开(公告)日：2013-04-16
申请号：US13033021
申请日：2011-02-23
申请人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A. G. Driskill-Smith , Steven M. Watts , David Druist
发明人： Dmytro Apalkov , Xueti Tang , Vladimir Nikitin , Alexander A. G. Driskill-Smith , Steven M. Watts , David Druist
IPC分类号： G11C11/14
CPC分类号： G11C11/5607 , G01R33/098 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A method and system for providing a magnetic junction usable in a magnetic memory are described. The magnetic junction includes first and second pinned layers, first and second nonmagnetic spacer layers, and a free layer. The pinned layers are nonmagnetic layer-free and self-pinned. In some aspects, the magnetic junction is configured to allow the free and second pinned layers to be switched between stable magnetic states when write currents are passed therethrough. The magnetic junction has greater than two stable states. In other aspects, the magnetic junction includes at least third and fourth spacer layers, a second free layer therebetween, and a third pinned layer having a pinned layer magnetic moment, being nonmagnetic layer-free, and being coupled to the second pinned layer. The magnetic junction is configured to allow the free layers to be switched between stable magnetic states when write currents are passed therethrough.
摘要翻译：描述了一种用于提供可用于磁存储器中的磁结的方法和系统。磁结包括第一和第二固定层，第一和第二非磁性间隔层和自由层。固定层是非磁性层，并且是自固定的。在一些方面，磁结被配置为允许自由和第二被钉扎层在写入电流通过时在稳定的磁状态之间切换。磁结有两个以上的稳定状态。在其它方面，磁结包括至少第三和第四间隔层，在它们之间的第二自由层和具有固定层磁矩的第三被钉扎层是非磁性层，并且耦合到第二被钉扎层。磁结被配置为允许当写入电流通过时自由层在稳定的磁状态之间切换。

6. 发明授权

US08399941B2 Magnetic junction elements having an easy cone anisotropy and a magnetic memory using such magnetic junction elements 有权
标题翻译：具有易锥度各向异性的磁结元件和使用这种磁结元件的磁存储器
公开(公告)号：US08399941B2
公开(公告)日：2013-03-19
申请号：US12940926
申请日：2010-11-05
申请人： Dmytro Apalkov , Mohamad Towfik Krounbi
发明人： Dmytro Apalkov , Mohamad Towfik Krounbi
IPC分类号： H01L29/82
CPC分类号： G11C11/1675 , G11C11/161
摘要： A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has an easy cone magnetic anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁结的方法和系统。磁结包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。自由层具有容易的锥形磁各向异性。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

7. 发明授权

US08385106B2 Method and system for providing a hierarchical data path for spin transfer torque random access memory 有权
标题翻译：提供自旋传递转矩随机存取存储器的层次数据路径的方法和系统
公开(公告)号：US08385106B2
公开(公告)日：2013-02-26
申请号：US12565273
申请日：2009-09-23
申请人： Adrian E. Ong
发明人： Adrian E. Ong
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C7/18 , G11C11/1653 , G11C11/1655 , G11C11/1673 , G11C11/1675 , G11C2207/002
摘要： A method and system for providing a magnetic memory are described. The method and system include providing memory array tiles (MATs), intermediate circuitry, global bit lines, global word lines, and global circuitry. Each MAT includes magnetic storage cells, bit lines, and word lines. Each of the magnetic storage cells includes at least one magnetic element and at least one selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element(s). The bit lines and the word lines correspond to the magnetic storage cells. The intermediate circuitry controls read and write operations within the MATs. Each global bit line corresponds to a first portion of the plurality of MATs. Each global word line corresponds to a second portion of the MATs. The global circuitry selects and drives part of the global bit lines and part of the global word lines for the read and write operations.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供存储器阵列瓦片（MATs），中间电路，全局位线，全局字线和全局电路。每个MAT包括磁存储单元，位线和字线。每个磁存储单元包括至少一个磁性元件和至少一个选择装置。磁性元件可通过驱动通过磁性元件的写入电流来编程。位线和字线对应于磁存储单元。中间电路控制MAT内的读写操作。每个全局位线对应于多个MAT的第一部分。每个全局字线对应于MAT的第二部分。全局电路选择并驱动部分全局位线和部分全局字线用于读取和写入操作。

8. 发明申请

US20110299330A1 PSEUDO PAGE MODE MEMORY ARCHITECTURE AND METHOD 有权
标题翻译： PSEUDO页面模式存储器架构和方法
公开(公告)号：US20110299330A1
公开(公告)日：2011-12-08
申请号：US12903152
申请日：2010-10-12
申请人： Adrian E. Ong
发明人： Adrian E. Ong
IPC分类号： G11C11/14 , H05K13/00
CPC分类号： G11C13/0069 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C13/0026 , G11C13/0061 , G11C16/0408 , G11C16/0466 , G11C2013/0088 , G11C2213/79 , Y10T29/49002
摘要： A non-volatile memory array includes a plurality of word-lines and a plurality of columns. One of the columns further includes a bistable regenerative circuit coupled to a first, a second, a third, and a fourth signal lines. The column also includes a non-volatile memory cell having current carrying terminals coupled to the first and second signal lines and a control terminal coupled to one of the plurality of word-lines. The column further includes a first transistor and a second transistor. The first transistor is coupled to the first terminal of the bistable regenerative circuit, and to a fifth signal line. The second transistor has a first current carrying terminal coupled to the second terminal of the bistable regenerative circuit, and a second current carrying terminal coupled to a sixth signal line. The gate terminals of the first and second transistors are coupled to a seventh signal line.
摘要翻译：非易失性存储器阵列包括多个字线和多个列。其中一列还包括耦合到第一，第二，第三和第四信号线的双稳态再生电路。该列还包括具有耦合到第一和第二信号线的载流端子和耦合到多个字线之一的控制端子的非易失性存储单元。该列还包括第一晶体管和第二晶体管。第一晶体管耦合到双稳态再生电路的第一端子和第五信号线。第二晶体管具有耦合到双稳态再生电路的第二端子的第一载流端子和耦合到第六信号线的第二载流端子。第一和第二晶体管的栅极端子耦合到第七信号线。

9. 发明申请

US20100247967A1 MAGNETIC ELEMENT UTILIZING FREE LAYER ENGINEERING 有权
标题翻译：磁性元件利用自由层工程
公开(公告)号：US20100247967A1
公开(公告)日：2010-09-30
申请号：US12816108
申请日：2010-06-15
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11C11/161 , H01L43/10 , Y10T428/115
摘要： A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，阻挡层和自由层。自由层包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的中间层。阻挡层位于被钉扎层和自由层之间，并且包括MgO。第一铁磁层位于阻挡层和中间层之间。第一铁磁层包括CoFeX和CoNiFeX中的至少一种，其中X选自B，P，Si，Nb，Zr，Hf，Ta，Ti，并且大于零原子百分比且不超过三十个原子百分。第一铁磁层与第二铁磁层铁磁耦合。中间层被配置为使得第一铁磁层具有第一结晶取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。

10. 发明授权

US07791931B2 Current driven memory cells having enhanced current and enhanced current symmetry 有权
标题翻译：具有增强的电流和增强的电流对称性的电流驱动存储单元
公开(公告)号：US07791931B2
公开(公告)日：2010-09-07
申请号：US12413535
申请日：2009-03-28
申请人： Eugene Youjun Chen , Yiming Huai
发明人： Eugene Youjun Chen , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/1697 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2013/0071 , G11C2013/0073
摘要： A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.
摘要翻译：描述了一种用于提供和使用磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。每个磁存储单元包括磁性元件和与磁性元件耦合的选择装置。通过在第一或第二方向通过磁性元件驱动的写入电流来对磁性元件进行编程。一方面，该方法和系统包括提供与磁存储单元和电压源耦合的电压源和电压泵。电源提供电源电压。电压泵向选择装置提供具有大于电源电压的幅度的偏置电压。另一方面包括在氧化物晶体管上提供硅作为选择装置。另一方面包括向晶体管的主体提供当晶体管截止时为第一电压的体偏置电压，以及晶体管导通时的第二电压。

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