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1. 发明授权

US08072800B2 Magnetic element having perpendicular anisotropy with enhanced efficiency 有权
标题翻译：磁性元件具有垂直各向异性，效率提高
公开(公告)号：US08072800B2
公开(公告)日：2011-12-06
申请号：US12560362
申请日：2009-09-15
申请人： Eugene Youjun Chen , Shengyuan Wang
发明人： Eugene Youjun Chen , Shengyuan Wang
IPC分类号： G11B5/39
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/1278 , G11B5/39 , G11C11/15 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1121 , Y10T428/1143
摘要： Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.
摘要翻译：与包括具有固定层磁化和垂直各向异性的固定层的磁性元件相关联的技术和磁性装置，非磁性间隔层和具有可变自由层磁化和垂直各向异性的自由层。

2. 发明授权

US08456898B2 Magnetic element having perpendicular anisotropy with enhanced efficiency 有权
标题翻译：磁性元件具有垂直各向异性，效率提高
公开(公告)号：US08456898B2
公开(公告)日：2013-06-04
申请号：US13311308
申请日：2011-12-05
申请人： Eugene Youjun Chen , Shengyuan Wang
发明人： Eugene Youjun Chen , Shengyuan Wang
IPC分类号： G11B5/39 , H01F10/32 , G11C11/15 , G11B5/127 , H01L43/08 , H01L43/12
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/1278 , G11B5/39 , G11C11/15 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1121 , Y10T428/1143
摘要： Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.
摘要翻译：与包括具有固定层磁化和垂直各向异性的固定层的磁性元件相关联的技术和磁性装置，非磁性间隔层和具有可变自由层磁化和垂直各向异性的自由层。

3. 发明申请

US20120075927A1 Magnetic Element Having Perpendicular Anisotropy With Enhanced Efficiency 有权
标题翻译：具有提高效率的垂直各向异性的磁性元件
公开(公告)号：US20120075927A1
公开(公告)日：2012-03-29
申请号：US13311308
申请日：2011-12-05
申请人： Eugene Youjun Chen , Shengyuan Wang
发明人： Eugene Youjun Chen , Shengyuan Wang
IPC分类号： G11C11/15 , G11B5/39
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/1278 , G11B5/39 , G11C11/15 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1121 , Y10T428/1143
摘要： Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.
摘要翻译：与包括具有固定层磁化和垂直各向异性的固定层的磁性元件相关联的技术和磁性装置，非磁性间隔层和具有可变自由层磁化和垂直各向异性的自由层。

4. 发明申请

US20110064969A1 Magnetic Element Having Perpendicular Anisotropy With Enhanced Efficiency 有权
标题翻译：具有提高效率的垂直各向异性的磁性元件
公开(公告)号：US20110064969A1
公开(公告)日：2011-03-17
申请号：US12560362
申请日：2009-09-15
申请人： Eugene Youjun Chen , Shengyuan Wang
发明人： Eugene Youjun Chen , Shengyuan Wang
IPC分类号： G11B5/72
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/1278 , G11B5/39 , G11C11/15 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1121 , Y10T428/1143
摘要： Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.
摘要翻译：与包括具有固定层磁化和垂直各向异性的固定层的磁性元件相关联的技术和磁性装置，非磁性间隔层和具有可变自由层磁化和垂直各向异性的自由层。

5. 发明授权

US08779538B2 Magnetic tunneling junction seed, capping, and spacer layer materials 有权
标题翻译：磁隧道结种子，封盖和间隔层材料
公开(公告)号：US08779538B2
公开(公告)日：2014-07-15
申请号：US13491568
申请日：2012-06-07
申请人： Eugene Youjun Chen , Xueti Tang
发明人： Eugene Youjun Chen , Xueti Tang
IPC分类号： H01L27/22 , H01L29/04 , H01L47/00 , G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08
摘要： In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.
摘要翻译：在一个实施例中，用于半导体器件的磁性元件包括设置在参考层和自由层之间的参考层，自由层和非磁性间隔层。非磁性间隔层包括二元，三元或多元合金氧化物材料。二元，三元或多元合金氧化物材料包括具有选自Ru，Al，Ta，Tb，Cu，V，Hf，Zr，W，Ag，Au，Fe中的一种或多种另外的元素的MgO ，Co，Ni，Nb，Cr，Mo和Rh。

6. 发明授权

US08546896B2 Magnetic tunneling junction elements having magnetic substructures(s) with a perpendicular anisotropy and memories using such magnetic elements 有权
标题翻译：具有垂直各向异性的磁性子结构的磁隧道连接元件和使用这种磁性元件的存储器
公开(公告)号：US08546896B2
公开(公告)日：2013-10-01
申请号：US12941031
申请日：2010-11-06
申请人： Daniel Lottis , Eugene Youjun Chen , Xueti Tang , Steven M. Watts
发明人： Daniel Lottis , Eugene Youjun Chen , Xueti Tang , Steven M. Watts
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286
摘要： A method and system for providing a magnetic substructure usable in a magnetic device, as well as a magnetic element and memory using the substructure are described. The magnetic substructure includes a plurality of ferromagnetic layers and a plurality of nonmagnetic layers. The plurality of ferromagnetic layers are interleaved with the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are immiscible with and chemically stable with respect to the plurality of nonmagnetic layers. The plurality of ferromagnetic layers are substantially free of a magnetically dead layer-producing interaction with the plurality of nonmagnetic layers. Further, the plurality of nonmagnetic layers induce a perpendicular anisotropy in the plurality of ferromagnetic layers. The magnetic substructure is configured to be switchable between a plurality of stable magnetic states when a write current is passed through the magnetic substructure.
摘要翻译：描述了一种用于提供可用于磁性装置中的磁性子结构的方法和系统，以及使用该子结构的磁性元件和存储器。磁性子结构包括多个铁磁层和多个非磁性层。多个铁磁层与多个非磁性层交错。所述多个铁磁层相对于所述多个非磁性层不混溶并且化学稳定。多个铁磁层基本上没有与多个非磁性层产生磁性死层的相互作用。此外，多个非磁性层在多个铁磁层中引起垂直各向异性。磁性子结构被配置为当写入电流通过磁性子结构时在多个稳定磁状态之间切换。

7. 发明授权

US07663848B1 Magnetic memories utilizing a magnetic element having an engineered free layer 有权
标题翻译：利用具有工程自由层的磁性元件的磁存储器
公开(公告)号：US07663848B1
公开(公告)日：2010-02-16
申请号：US11523872
申请日：2006-09-20
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3906 , G11C11/161 , G11C11/1675 , H01F10/325 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： A method and system for providing a magnetic memory are described. The method and system include providing a plurality of magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic element. The magnetic element(s) includes a pinned layer, a barrier layer that is a crystalline insulator and has a first crystalline orientation, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first and second ferromagnetic layer. The barrier layer resides between the pinned and free layers. The first ferromagnetic layer resides between the barrier layer and the intermediate layer and is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has the first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer. The magnetic element is configured to allow the free layer to be switched utilizing spin transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。每个磁存储单元包括至少一个磁性元件。磁性元件包括钉扎层，作为结晶绝缘体并具有第一结晶取向的阻挡层和自由层。自由层包括第一铁磁层，第二铁磁层和第一和第二铁磁层之间的中间层。阻挡层位于固定层和自由层之间。第一铁磁层位于阻挡层和中间层之间，并且与第二铁磁层铁磁耦合。中间层被配置为使得第一铁磁层具有第一晶体取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。磁性元件配置成当写入电流通过磁性元件时允许利用自旋转移来切换自由层。

8. 发明授权

US07272035B1 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells 有权
标题翻译：利用自旋转移和使用这种电池的磁存储器的磁存储单元的电流驱动切换
公开(公告)号：US07272035B1
公开(公告)日：2007-09-18
申请号：US11217524
申请日：2005-08-31
申请人： Eugene Youjun Chen , Yiming Huai
发明人： Eugene Youjun Chen , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes a magnetic element and a selection transistor. The magnetic element may be programmed using spin transfer induced switching by a write current driven through the magnetic element. The selection transistor includes a source and a drain. The plurality of magnetic storage cells are grouped in pairs. The source of the selection transistor for one magnetic storage cell of a pair shares the source with the selection transistor for another magnetic storage cell of the pair.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。多个磁存储单元中的每一个包括磁性元件和选择晶体管。磁性元件可以使用通过磁性元件驱动的写入电流进行自旋转移感应开关来编程。选择晶体管包括源极和漏极。多个磁存储单元成对分组。一对一个磁存储单元的选择晶体管的源与该对的另一个磁存储单元的选择晶体管共享源。

9. 发明授权

US06912107B2 Magnetic element with insulating veils and fabricating method thereof 失效
标题翻译：具有绝缘面纱的磁性元件及其制造方法
公开(公告)号：US06912107B2
公开(公告)日：2005-06-28
申请号：US10830264
申请日：2004-04-21
申请人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
发明人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
IPC分类号： G11B5/39 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/127
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/324 , H01F41/302 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052 , Y10T428/24917
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers (26 & 28). A spacer layer (16) is located between the ferromagnetic layer (26) of the first electrode (14) and the ferromagnetic layer (28) of the second electrode (16) for permitting tunneling current in a direction generally perpendicular to the ferromagnetic layers (26 & 28). The device includes insulative veils (34) characterized as electrically isolating the first electrode (14) and the second electrode (18), the insulative veils (34) including non-magnetic and insulating dielectric properties. Additionally disclosed is a method of fabricating the magnetic element (10) with insulative veils (34) that have been transformed from having conductive properties to insulative properties through oxygen plasma ashing techniques.
摘要翻译：一种用于磁性元件的改进和新颖的器件和制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。第一电极（14）和第二电极（18）包括铁磁层（26和28）。间隔层（16）位于第一电极（14）的铁磁层（26）和第二电极（16）的铁磁层（28）之间，用于允许隧道电流沿大致垂直于铁磁层的方向 26和28）。该装置包括绝缘面纱（34），其特征在于电隔离第一电极（14）和第二电极（18），绝缘面纱（34）包括非磁性和绝缘的介电性质。另外公开了一种通过氧等离子体灰化技术制造具有绝缘面纱（34）的磁性元件（10）的方法，其已经从具有导电性能转变为绝缘性能。

10. 发明授权

US06835423B2 Method of fabricating a magnetic element with insulating veils 有权
标题翻译：制造具有绝缘面纱的磁性元件的方法
公开(公告)号：US06835423B2
公开(公告)日：2004-12-28
申请号：US10349702
申请日：2003-01-22
申请人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
发明人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
IPC分类号： H05H100
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/324 , H01F41/302 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052 , Y10T428/24917
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers (26 & 28). A spacer layer (16) is located between the ferromagnetic layer (26) of the first electrode (14) and the ferromagnetic layer (28) of the second electrode (16) for permitting tunneling current in a direction generally perpendicular to the ferromagnetic layers (26 & 28). The device includes insulative veils (34) characterized as electrically isolating the first electrode (14) and the second electrode (18), the insulative veils (34) including non-magnetic and insulating dielectric properties. Additionally disclosed is a method of fabricating the magnetic element (10) with insulative veils (34) that have been transformed from having conductive properties to insulative properties through oxygen plasma ashing techniques.
摘要翻译：一种用于磁性元件的改进和新颖的器件和制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。第一电极（14）和第二电极（18）包括铁磁层（26和28）。间隔层（16）位于第一电极（14）的铁磁层（26）和第二电极（16）的铁磁层（28）之间，用于允许隧道电流沿大致垂直于铁磁层的方向 26和28）。该装置包括绝缘面纱（34），其特征在于电隔离第一电极（14）和第二电极（18），绝缘面纱（34）包括非磁性和绝缘的介电性质。另外公开了一种通过氧等离子体灰化技术制造具有绝缘面纱（34）的磁性元件（10）的方法，其已经从具有导电性能转变为绝缘性能。

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