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    • 2. 发明授权
    • Multi-beam deflector array means with bonded electrodes
    • 具有接合电极的多光束偏转器阵列装置
    • US08563942B2
    • 2013-10-22
    • US12780551
    • 2010-05-14
    • Elmar Platzgummer
    • Elmar Platzgummer
    • G01T1/08H01J3/14
    • H01J37/3174B82Y10/00B82Y40/00H01J37/045H01J2237/0437
    • The invention relates to a multi-beam deflector array means for use in a particle-beam exposure apparatus employing a beam of charged particles, said multi-beam deflector array means having an overall plate-like shape with a membrane region and a buried CMOS-layer, said membrane region comprising a first side facing towards the incoming beam of particles and a second side opposite to the first side, an array of apertures, each aperture allowing passage of a corresponding beam element formed out of said beam of particles, and an array of electrodes, each aperture being associated with at least one of said electrodes and the electrodes being controlled via said CMOS layer, wherein the electrodes are pillared, standing proud of the main body of the multi-beam deflector array means, the electrodes being connected to one side of the main body of the multi-beam deflector array means by means of bonding connections.
    • 本发明涉及一种用于使用带电粒子束的粒子束曝光设备的多光束偏转器阵列装置,所述多光束偏转器阵列装置具有总体板状形状,其具有膜区域和掩埋的CMOS- 所述膜区域包括面向入射入射束的第一侧和与第一侧相对的第二侧,孔阵列,每个孔允许通过由所述粒子束形成的对应的束元件,以及 电极阵列,每个孔与所述电极中的至少一个相关联,并且电极通过所述CMOS层进行控制,其中所述电极被支柱,对于多光束偏转器阵列装置的主体站立,电极被连接 通过粘合连接到多光束偏转器阵列装置的主体的一侧。
    • 3. 发明授权
    • Global point spreading function in multi-beam patterning
    • 多光束图案中的全局点扩散函数
    • US08278635B2
    • 2012-10-02
    • US12708737
    • 2010-02-19
    • Elmar PlatzgummerHeinrich FragnerStefan Cernusca
    • Elmar PlatzgummerHeinrich FragnerStefan Cernusca
    • H01J3/26
    • H01J37/3174B82Y10/00B82Y40/00
    • In a particle multi-beam structuring apparatus for forming a pattern on a target's surface using a beam of electrically charged particles, during exposure steps the particle beam is produced, directed through a pattern definition means producing a patterned particle beam composed of multiple beamlets, and projected by an optical column including a controllable deflection means onto the target surface to form, at a nominal location on the target, a beam image comprising the image of defining structures in the pattern definition means. The beam image's nominal location relative to the target is changed between exposure steps. The actual location of the beam image is varied within each exposure step around the nominal location, through a set of locations realizing a distribution of locations within the image plane around a mean location coinciding with the nominal location, thus introducing an additional blur which is homogenous over the entire beam image.
    • 在用于使用带电粒子束在目标表面上形成图案的粒子多光束结构装置中,在曝光步骤期间,通过产生由多个子束组成的图案化粒子束的图案定义装置产生粒子束,并且 通过包括可控偏转装置的光学柱被投影到目标表面上,以在目标的标称位置处形成包括图案定义装置中的限定结构的图像的光束图像。 相对于目标的光束图像的标称位置在曝光步骤之间改变。 射束图像的实际位置在标称位置周围的每个曝光步骤内通过一组位置实现,该位置实现在与标称位置重合的平均位置周围的图像平面内的位置的分布,从而引入均匀的附加模糊 在整个光束图像上。
    • 4. 发明授权
    • Compensation of dose inhomogeneity and image distortion
    • 剂量不均匀性和图像畸变的补偿
    • US08258488B2
    • 2012-09-04
    • US12535744
    • 2009-08-05
    • Elmar PlatzgummerHeinrich FragnerStefan Cernusca
    • Elmar PlatzgummerHeinrich FragnerStefan Cernusca
    • A61N5/00
    • B82Y40/00B82Y10/00G03F1/20G03F7/70433H01J37/3174
    • An improved aperture arrangement in a device for defining a pattern on a target, for use in a particle-beam exposure apparatus, by being irradiated with a beam of electrically charged particles and allowing passage of the beam only through a plurality of apertures. The device includes an aperture array having a plurality of apertures of identical shape defining the shape and relative position of beamlets permeating the apertures. A blanking device switches off the passage of selected beamlets permeating the apertures and defined by them. The apertures are arranged on the aperture array according to an arrangement deviating from a regular arrangement by small deviations, adjusting for distortions caused by the particle-beam exposure apparatus, and the size of the apertures of the aperture array differs across the aperture array in order to allow for an adjustment of the current radiated on the target through the apertures and the corresponding openings.
    • 用于在靶上限定图案的装置中的改进的孔布置,用于粒子束曝光装置,通过照射带电粒子束并允许光束仅通过多个孔。 该装置包括孔阵列,该孔阵列具有多个相同形状的孔,限定穿透孔的子束的形状和相对位置。 消隐装置关闭穿过孔并由它们限定的选定子束的通过。 根据通过小偏差偏离规则排列的布置,孔径布置在孔阵列上,调整由粒子束曝光装置引起的变形,并且孔径阵列的孔径的大小沿孔径阵列依次不同 以允许通过孔和相应的开口调节在靶上辐射的电流。
    • 5. 发明申请
    • METHOD FOR MASKLESS PARTICLE-BEAM EXPOSURE
    • 无障碍颗粒光束曝光方法
    • US20100252733A1
    • 2010-10-07
    • US12770904
    • 2010-04-30
    • Elmar Platzgummer
    • Elmar Platzgummer
    • H01J37/20H01J37/317
    • H01J37/3174B82Y10/00B82Y40/00H01J37/302H01J2237/30483
    • For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.
    • 对于使用具有多个孔的图案定义装置的用能量带电粒子束无目标地照射目标并且将图案定义装置中的孔成像到相对于图案定义装置(v)相对于轴线横向移动(v)的目标, 对于像素曝光期间,图像的位置与目标一起移动,在该像素曝光期间,覆盖目标的相对运动的距离,该距离至少是孔径图像的宽度(w)的倍数, 目标,并且在所述像素曝光周期之后,光束图像的位置改变,位置的变化通常补偿光束图像的位置的整体移动。
    • 6. 发明申请
    • METHOD FOR MASKLESS PARTICLE-BEAM EXPOSURE
    • 无障碍颗粒光束曝光方法
    • US20080237460A1
    • 2008-10-02
    • US12051087
    • 2008-03-19
    • Heinrich FragnerElmar Platzgummer
    • Heinrich FragnerElmar Platzgummer
    • G01N23/00G21K5/10
    • H01J37/3174B82Y10/00B82Y40/00H01J37/302H01J2237/30483
    • For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.
    • 对于使用具有多个孔的图案定义装置的用能量带电粒子束无目标地照射目标并且将图案定义装置中的孔成像到相对于图案定义装置(v)相对于轴线横向移动(v)的目标, 对于像素曝光期间,图像的位置与目标一起移动,在该像素曝光期间,覆盖目标的相对运动的距离,该距离至少是孔径图像的宽度(w)的倍数, 目标,并且在所述像素曝光周期之后,光束图像的位置改变,位置的变化通常补偿光束图像的位置的整体移动。
    • 8. 发明授权
    • Method for maskless particle-beam exposure
    • 无掩模粒子束曝光方法
    • US08222621B2
    • 2012-07-17
    • US12619480
    • 2009-11-16
    • Heinrich FragnerElmar PlatzgummerRobert NowakAdrian Bürli
    • Heinrich FragnerElmar PlatzgummerRobert NowakAdrian Bürli
    • G21K5/10H01J37/08
    • H01J37/3177B82Y10/00B82Y40/00Y10S430/143
    • In a maskless particle multibeam processing apparatus, a particle beam is projected through a pattern definition system producing a regular array of beamlets according to a desired pattern, which is projected onto a target which moves at continuous speed along a scanning direction with respect to the pattern definition system. During a sequence of uniformly timed exposure steps the beam image is moved along with the target along the scanning direction, and between exposure steps the location of the beam image is changed with respect to the target. During each exposure step the target covers a distance greater than the mutual distance of neighboring image elements on the target. The location of the beam image at consecutive exposure steps corresponds to a sequence of interlacing placement grids, and after each exposure step the beam image is shifted to a position associated with a different placement grid, with a change of location generally including a component across the scanning direction, thus cycling through the set of placement grids.
    • 在无掩模粒子多波束处理装置中,粒子束通过图案定义系统投射,根据期望的图案产生规则的子束阵列,该期望图案被投影到相对于图案沿扫描方向以连续速度移动的目标 定义系统 在一系列均匀曝光步骤期间,光束图像沿着扫描方向与目标一起移动,并且在曝光步骤之间,光束图像的位置相对于目标改变。 在每个曝光步骤期间,目标覆盖的距离大于目标上相邻图像元素的相互距离。 在连续曝光步骤中的光束图像的位置对应于交错放置网格的序列,并且在每个曝光步骤之后,光束图像被移动到与不同的放置网格相关联的位置,其中位置的变化通常包括横跨 扫描方向,从而循环通过一组放置网格。
    • 10. 发明授权
    • Particle-beam apparatus with improved wien-type filter
    • 具有改进型wien型过滤器的粒子束装置
    • US07763851B2
    • 2010-07-27
    • US11951543
    • 2007-12-06
    • Elmar Platzgummer
    • Elmar Platzgummer
    • G21K1/08G01N23/00
    • H01J37/05B82Y10/00B82Y40/00H01J37/3174H01J2237/0435H01J2237/057
    • In a particle-beam apparatus for irradiating a target, a pattern defined in a pattern definer is projected onto the target through a projection system by a beam of energetic electrically charged particles of, largely, a species of a nominal mass having a nominal kinetic energy. To generate the beam, a particle source, a velocity-dependent deflector and an illumination optics system are provided. The velocity-dependent deflector includes a transversal dipole electrical field and/or a transversal dipole magnetic field, which act upon the particles so as to causing a deviation of the path of the particles with regard to the paths of the nominal species which is dependent on the velocity of the particles. A delimiter is provided as a component of the pattern definer or, preferably, the projection system, serving to remove particles whose paths are deviating from the nominal path.
    • 在用于照射目标物的粒子束装置中,以图案定义器定义的图案通过投影系统通过能量带电的粒子束投射到目标物上,该光束的大部分具有标称质量的物质具有标称动能 。 为了产生光束,提供了粒子源,速度依赖偏转器和照明光学系统。 与速度相关的偏转器包括横向偶极电场和/或横向偶极子磁场,其作用于颗粒,从而导致颗粒相对于标称物质的路径的偏离,这取决于 颗粒的速度。 分隔符被提供为图案定义器的一个部件,或者优选地,该投影系统用于去除其路径偏离标称路径的颗粒。