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1. 发明申请

US20180364564A1 ON-AXIS ILLUMINATION AND ALIGNMENT FOR CHARGE CONTROL DURING CHARGED PARTICLE BEAM INSPECTION 审中-公开
公开(公告)号：US20180364564A1
公开(公告)日：2018-12-20
申请号：US15643271
申请日：2017-07-06
申请人： APPLIED MATERIALS ISRAEL LTD. , ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
发明人： Alex Goldenshtein , Stefan Lanio
IPC分类号： G03F1/86 , H01J37/304 , G03F9/00 , H01J37/30 , H01J37/317 , H01J37/22
CPC分类号： G03F1/86 , G03F9/7073 , H01J37/222 , H01J37/3007 , H01J37/3045 , H01J37/3174 , H01J2237/063 , H01J2237/30433
摘要： A charged particle beam apparatus includes a charged particle source configured to generate charged particles, an electrode configured to accelerate the charged particles to form a charged particle beam, a bender unit configured to adjust a path of the charged particle beam, and an objective lens configured to focus the charged particle beam onto a spot on a sample. The charged particle beam passes through a bore of the objective lens as the charged particle beam propagates from the charged particle source to the sample. The apparatus also includes a light source configured to generate a light beam, and a mirror disposed within the bender unit and arranged to direct the light beam to the spot on the sample.

2. 发明授权

US10083815B2 Adjustable mass resolving aperture 有权
公开(公告)号：US10083815B2
公开(公告)日：2018-09-25
申请号：US15136524
申请日：2016-04-22
申请人： Glenn Lane Family Limited Liability Limited Partnership
发明人： Glenn E. Lane
IPC分类号： H01J37/30 , H01J37/08 , H01J37/317 , H01J37/09 , C23C14/48 , C23C14/54 , H01J49/06 , H01J49/26 , H01L21/265
CPC分类号： H01J37/3007 , C23C14/48 , C23C14/54 , H01J37/08 , H01J37/09 , H01J37/3171 , H01J49/062 , H01J49/26 , H01J2237/0213 , H01J2237/04 , H01J2237/0455 , H01J2237/152 , H01J2237/31701 , H01L21/265
摘要： Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

3. 发明授权

US09941093B2 Target processing unit 有权
公开(公告)号：US09941093B2
公开(公告)日：2018-04-10
申请号：US14992049
申请日：2016-01-11
申请人： Mapper Lithography IP B.V.
发明人： Johan Joost Koning , David Johannes van den Bergen
IPC分类号： H01J37/02 , G03F7/20 , H01J37/20 , H01J37/30 , H01J37/317 , B01J19/12 , H01J37/10
CPC分类号： H01J37/023 , B01J19/12 , G03F7/708 , G03F7/70825 , G03F7/70833 , G03F7/70891 , G03F7/709 , G03F7/70975 , H01J37/10 , H01J37/20 , H01J37/3007 , H01J37/3177
摘要： The invention relates to a target processing unit (10) comprising a vacuum chamber (30) for accommodating a target to be processed, a projection column (46) within the vacuum chamber for generating a beam and projecting the beam towards the target, and a first conduit arrangement (26,36,37,60) for connecting the projection column to external equipment (22). The vacuum chamber can comprise a positioning system (114) for supporting the target, and a second conduit arrangement (110) distinct from the first conduit arrangement for connecting the positioning system to external equipment, wherein the positioning system is moveably arranged with respect to the projection column, and wherein the positioning system and the projection column occupy spatially distinct portions of the vacuum chamber. The first conduit arrangement extends through an upper side of the vacuum chamber, and the second conduit arrangement extends through a lower side of the vacuum chamber.

4. 发明授权

US09852882B2 Annular cooling fluid passage for magnets 有权
公开(公告)号：US09852882B2
公开(公告)日：2017-12-26
申请号：US14873284
申请日：2015-10-02
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Scott Barraclough , James S. Buff
IPC分类号： H01J3/14 , H01J37/30 , H01F7/20 , H01J37/147 , H01J37/317 , H05K7/20 , H01F27/10
CPC分类号： H01J37/3007 , H01F7/20 , H01F27/10 , H01J37/1472 , H01J37/1475 , H01J37/3171 , H01J2237/002 , H01J2237/152 , H01J2237/1526 , H01J2237/303 , H01J2237/31701 , H05K7/20
摘要： A magnet having an annular coolant fluid passage is generally described. Various examples provide a magnet including a first magnet and a second magnet disposed around an ion beam coupler with an aperture there through. The first and second magnets each including a metal core having a cavity therein, one or more conductive wire wraps disposed around the metal core, and an annular core element configured to be inserted into the cavity, wherein an annular coolant fluid passage is formed between the cavity and the annular core element. Furthermore, the annular core element may have a first diameter and a middle section having a second diameter, the second diameter being less than the first diameter. Other embodiments are disclosed and claimed.

5. 发明授权

US09748071B2 Individually switched field emission arrays 有权
公开(公告)号：US09748071B2
公开(公告)日：2017-08-29
申请号：US14765759
申请日：2014-02-05
申请人： Massachusetts Institute of Technology
发明人： Stephen Angelo Guerrera , Akintunde I. Akinwande
IPC分类号： H01J37/073 , H01L21/00 , H01J37/065 , H01J37/317 , H01J37/30
CPC分类号： H01J37/073 , H01J37/065 , H01J37/3007 , H01J37/3174 , H01J37/3177 , H01J2237/0473 , H01J2237/063 , H01J2237/3175 , H01J2237/31781 , H01L21/00
摘要： An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.

6. 发明授权

US09653261B2 Charged particle lithography system and beam generator 有权
公开(公告)号：US09653261B2
公开(公告)日：2017-05-16
申请号：US14400569
申请日：2013-05-14
申请人： MAPPER LITHOGRAPHY IP B.V.
发明人： Alexander Hendrik Vincent Van Veen , Willem Henk Urbanus
IPC分类号： G03B27/52 , H01J37/317 , H01J37/09 , H01J37/30 , B82Y10/00 , B82Y40/00
CPC分类号： H01J37/09 , B82Y10/00 , B82Y40/00 , H01J37/147 , H01J37/3007 , H01J37/302 , H01J37/3174 , H01J37/3177 , H01J2237/002 , H01J2237/026 , H01J2237/0262 , H01J2237/0264 , H01J2237/16 , H01J2237/182 , H01J2237/188
摘要： The invention relates to a charged particle lithography system for exposing a target. The system includes a charged particle beam generator for generating a charged particle beam; an aperture array (6) for forming a plurality of beamlets from the charged particle beam; and a beamlet projector (12) for projecting the beamlets onto a surface of the target. The charged particle beam generator includes a charged particle source (3) for generating a diverging charged particle beam; a collimator system (5a,5b,5c,5d; 72;300) for refracting the diverging charged particle beam; and a cooling arrangement (203) for removing heat from the collimator system, the cooling arrangement comprising a body surrounding at least a portion of the collimator system.

7. 发明授权

US09437396B2 Multi charged particle beam writing apparatus, and multi charged particle beam writing method 有权
标题翻译：多带电粒子束写入装置和多带电粒子束写入方法
公开(公告)号：US09437396B2
公开(公告)日：2016-09-06
申请号：US14755376
申请日：2015-06-30
申请人： NuFlare Technology, Inc.
发明人： Hironobu Matsumoto
IPC分类号： H01J37/20 , H01J37/24 , H01J37/317 , H01J37/04 , H01J37/30
CPC分类号： H01J37/243 , H01J37/045 , H01J37/20 , H01J37/3007 , H01J37/3177 , H01J2237/31754 , H01J2237/31774
摘要： A multi charged particle beam writing apparatus includes a dose calculation unit to calculate a first dose resolving the resist of the target object, for a first beam of the multiple beams, corresponding to a pattern forming region, in which a pattern is arranged; and to calculate a second dose not resolving the resist, for a second beam of the multiple beams, corresponding to a no-pattern forming region, which surrounds the whole perimeter of the pattern and in which no pattern is arranged, and a deflection control unit to control a plural blankers so that a dose of the first beam is to be the first dose calculated and a dose of the second beam is to be the second dose calculated.
摘要翻译：一种多带电粒子束写入装置，包括剂量计算单元，用于对应于布置有图案的图案形成区域，计算针对所述多个波束的第一波束的目标物体的抗蚀剂的第一剂量; 并且计算不分辨抗蚀剂的第二光束，对应于围绕图案的整个周边的无图案形成区域的多个光束的第二光束，其中不设置图案，偏转控制单元以控制多个阻塞物，使得第一光束的剂量将被计算为第一剂量，并且第二光束的剂量将被计算为第二剂量。

8. 发明授权

US09355751B2 Multi-electrode stack arrangement 有权
标题翻译：多电极堆叠布置
公开(公告)号：US09355751B2
公开(公告)日：2016-05-31
申请号：US14541238
申请日：2014-11-14
申请人： MAPPER LITHOGRAPHY IP B.V.
发明人： Willem Henk Urbanus , Marco Jan-Jaco Wieland
IPC分类号： G21K1/02 , G21K5/04 , H01J37/24 , H01J37/30 , H01J37/317 , H01J37/02 , H01J37/16 , H01J37/065 , H01J37/12
CPC分类号： G21K1/02 , G21K5/04 , H01J37/026 , H01J37/065 , H01J37/12 , H01J37/16 , H01J37/24 , H01J37/3002 , H01J37/3007 , H01J37/3174 , H01J37/3175 , H01J37/3177 , H01J2237/002 , H01J2237/0216 , H01J2237/024 , H01J2237/032 , H01J2237/04 , H01J2237/1215 , H01J2237/16 , H01J2237/1825 , H01J2237/303 , H01J2237/30472
摘要： The invention relates to an electrode stack (70) comprising stacked electrodes (71-80) for manipulating a charged particle beam along an optical axis (A). Each electrode comprises an electrode body with an aperture for the charged particle beam. The electrode bodies are mutually spaced and the electrode apertures are coaxially aligned along the optical axis. The electrode stack comprises electrically insulating spacing structures (89) between each pair of adjacent electrodes for positioning the electrodes (71-80) at predetermined mutual distances along the axial direction (Z). A first electrode and a second electrode each comprise an electrode body with one or more support portions (86), wherein each support portion is configured to accommodate at least one spacing structure (89). The electrode stack has at least one clamping member (91-91c) configured to hold the support portions (86) of the first and second electrodes, as well as the intermediate spacing structure (89) together.
摘要翻译：本发明涉及一种电极堆叠（70），其包括用于沿光轴（A）操纵带电粒子束的堆叠电极（71-80）。每个电极包括具有用于带电粒子束的孔的电极体。电极体相互间隔开，并且电极孔沿光轴同轴对准。电极堆叠包括在每对相邻电极之间的电绝缘间隔结构（89），用于将电极（71-80）沿着轴向方向（Z）定位在预定的相互距离处。第一电极和第二电极各自包括具有一个或多个支撑部分（86）的电极主体，其中每个支撑部分构造成容纳至少一个间隔结构（89）。电极堆叠具有至少一个构造成将第一和第二电极的支撑部分（86）以及中间间隔结构（89）保持在一起的夹紧构件（91-91c）。

9. 发明授权

US09293295B2 Ion implantation apparatus, final energy filter, and ion implantation method 有权
标题翻译：离子注入装置，最终能量过滤器和离子注入方法
公开(公告)号：US09293295B2
公开(公告)日：2016-03-22
申请号：US14670173
申请日：2015-03-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita
IPC分类号： H01J37/317 , H01J37/147 , H01J37/05 , H01J37/30
CPC分类号： H01J37/147 , H01J37/05 , H01J37/3007 , H01J37/3171 , H01J2237/057
摘要： A final energy filter includes a first adjustment electrode portion, an intermediate electrode portion, and a second adjustment electrode portion. The final energy filter further includes a power supply unit. The power supply unit is configured such that it applies the voltages separately to the first adjustment electrode portion, the intermediate electrode portion, and the second adjustment electrode portion. The power supply unit applies voltages to an upstream auxiliary electrode portion, a deflection electrode portion and a downstream auxiliary electrode portion, respectively, such that the energy range of ion beam in a first region between the upstream auxiliary electrode portion and the deflection electrode portion is approximately equal to that in a second region between the deflection electrode portion and the downstream auxiliary electrode portion.
摘要翻译：最终能量过滤器包括第一调整电极部分，中间电极部分和第二调节电极部分。最终能量过滤器还包括电源单元。电源单元被构造成使得其分别施加电压到第一调整电极部分，中间电极部分和第二调节电极部分。电源单元分别向上游辅助电极部分，偏转电极部分和下游辅助电极部分施加电压，使得上游辅助电极部分和偏转电极部分之间的第一区域中的离子束的能量范围为大致等于偏转电极部分和下游辅助电极部分之间的第二区域中的位置。

10. 发明授权

US09281165B1 Bias electrodes for tandem accelerator 有权
标题翻译：用于串联加速器的偏置电极
公开(公告)号：US09281165B1
公开(公告)日：2016-03-08
申请号：US14469050
申请日：2014-08-26
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Shengwu Chang , Christopher Lupoli , William Davis Lee , Frank Sinclair , James Pixley
IPC分类号： H01J49/00 , H01J37/30 , H01J37/317 , H01J37/05 , H05H5/06
CPC分类号： H01J37/3007 , H01J37/08 , H01J37/3171 , H01J2237/0473 , H01J2237/0815 , H05H5/063
摘要： A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece.
摘要翻译：公开了一种具有改进性能的串联加速器和离子注入机。串联加速器包括多个输入电极，多个输出电极和设置在它们之间的高电压端子。高压端子包括剥离管。将中性分子注入汽提塔，从入射的负离子束中除去电子。所产生的正离子朝向多个输出电极加速。为了减少离开汽提塔的不需要的正离子的量，偏压电极设置在汽提塔管的入口和出口处。偏置电极偏置第二电压，大于施加到端子的第一电压。偏置电极排斥缓慢移动的正离子，防止它们离开剥离管并污染工件。

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