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1. 发明授权

US09972508B2 Manufacturing method of semiconductor device 有权
公开(公告)号：US09972508B2
公开(公告)日：2018-05-15
申请号：US15548077
申请日：2015-06-24
申请人： Renesas Electronics Corporation
发明人： Kei Taniguchi
IPC分类号： H01L21/00 , H01L21/56 , H01L23/00
CPC分类号： H01L21/56 , H01L21/4828 , H01L23/3107 , H01L23/49503 , H01L23/49548 , H01L23/49582 , H01L24/06 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/92 , H01L2224/04042 , H01L2224/05554 , H01L2224/06135 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/92247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： The reliability of a semiconductor device is improved. In a manufacturing method of a semiconductor device, when resin enters a ditch formed on a lower surface of a chip mounting portion by a process of forming a sealing body made of the resin, the resin embedded in the ditch is removed by a process of cleaning the lower surface of the chip mounting portion, and a plating film is formed also on an inner wall of the ditch in a process of forming the plating film on the lower surface of the chip mounting portion.

2. 发明申请

US20120015495A1 SEMICONDUCTOR DEVICE INCLUDING MIM ELEMENT AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：包含MIM元件的半导体器件及其制造方法
公开(公告)号：US20120015495A1
公开(公告)日：2012-01-19
申请号：US13244438
申请日：2011-09-24
申请人： Masayuki Furumiya , Takeshi Toda
发明人： Masayuki Furumiya , Takeshi Toda
IPC分类号： H01L21/02
CPC分类号： H01L28/40
摘要： A method of manufacturing a semiconductor device includes forming a first insulating film above a semiconductor substrate, forming a wiring to be buried in the first insulating film, forming a protruding portion in an upper surface of the wiring, forming a second insulating film above the first insulating film and the wiring including the protruding portion, planarizing a surface of the second insulating film, forming a third insulating film on the second insulating film whose surface is planarized, forming a lower electrode on the third insulating film, forming a capacitor insulating film on the lower electrode, and forming an upper electrode on the capacitor insulating film.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成第一绝缘膜，形成要埋在第一绝缘膜中的布线，在布线的上表面形成突出部分，在第一绝缘膜上形成第二绝缘膜绝缘膜和包括突出部分的布线，平坦化第二绝缘膜的表面，在其表面平坦化的第二绝缘膜上形成第三绝缘膜，在第三绝缘膜上形成下电极，形成电容器绝缘膜下电极，并在电容器绝缘膜上形成上电极。

3. 发明申请

US20110216569A1 CONTENT ADDRESSABLE MEMORY DEVICE 有权
标题翻译：内容可寻址存储器件
公开(公告)号：US20110216569A1
公开(公告)日：2011-09-08
申请号：US13038916
申请日：2011-03-02
申请人： Mihoko AKIYAMA
发明人： Mihoko AKIYAMA
IPC分类号： G11C15/00
CPC分类号： G11C5/14 , G11C15/00 , G11C15/04
摘要： A content addressable memory device capable of making simultaneous pursuit of low power consumption and speeding up is provided. A match amplifier A determines coincidence or non-coincidence of search data and data stored in a content addressable memory in an entry of a memory array A, according to a voltage of a match line MLA. A match amplifier B determines coincidence or non-coincidence of search data and data stored in a content addressable memory in an entry of a memory array B, according to a voltage of a match line MLB. A block-B control circuit directs to start searching in the memory array B after two cycles after searching has been started in the memory array A. A block-B activation control circuit directs to stop searching in the memory array B according to a voltage of the match line MLA after searching in the memory array A.
摘要翻译：提供了能够同时追求低功耗和加速的内容可寻址存储装置。匹配放大器A根据匹配线MLA的电压，确定存储器阵列A的条目中存储在内容可寻址存储器中的搜索数据和数据的一致或非重合。匹配放大器B根据匹配线MLB的电压确定搜索数据和存储在存储器阵列B的条目中的内容可寻址存储器中的数据的一致或非重合。块B控制电路指示在存储器阵列A中开始搜索之后的两个周期之后在存储器阵列B中开始搜索。块B激活控制电路指示根据存储器阵列B的电压停止在存储器阵列B中的搜索在存储器阵列A中搜索后的匹配线MLA。

4. 发明申请

US20110198726A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110198726A1
公开(公告)日：2011-08-18
申请号：US13095352
申请日：2011-04-27
申请人： Tetsuya NITTA , Takayuki Igarashi
发明人： Tetsuya NITTA , Takayuki Igarashi
IPC分类号： H01L29/735
CPC分类号： H01L29/0847 , H01L21/26586 , H01L21/761 , H01L21/76281 , H01L21/76283 , H01L29/0684 , H01L29/0692 , H01L29/0852 , H01L29/1095 , H01L29/42368 , H01L29/7317 , H01L29/7824 , H01L29/7835 , H01L29/7881 , H01L29/8611
摘要： An N− layer is formed on a semiconductor substrate, with a BOX layer interposed. In the N− layer, a trench isolation region is formed to surround the N− layer to be an element forming region. The trench isolation region is formed to reach the BOX layer, from the surface of the N− layer. Between trench isolation region and the N− layer, a P type diffusion region 10a is formed. The P type diffusion region is formed continuously without any interruption, to be in contact with the entire surface of an inner sidewall of the trench isolation region surrounding the element forming region. In the element forming region of the N− layer, a prescribed semiconductor element is formed. Thus, a semiconductor device is formed, in which electrical isolation is established reliably, without increasing the area occupied by the element forming region.
摘要翻译：在半导体衬底上形成有一个BOX层的N层。在N层中，形成沟槽隔离区域以包围N层以成为元件形成区域。沟槽隔离区形成为从N层的表面到达BOX层。在沟槽隔离区域和N层之间形成P型扩散区域10a。连续形成P型扩散区域而不间断地与围绕元件形成区域的沟槽隔离区域的内侧壁的整个表面接触。在N层的元件形成区域中，形成规定的半导体元件。因此，形成了可靠地建立电绝缘的半导体器件，而不增加元件形成区域占据的面积。

5. 发明授权

US09931953B2 Non-contact power supply method and non-contact power supply system 有权
公开(公告)号：US09931953B2
公开(公告)日：2018-04-03
申请号：US14619198
申请日：2015-02-11
申请人： Renesas Electronics Corporation
发明人： Daisuke Oshida , Shigeru Furuta
IPC分类号： H02J7/00 , B60L11/18 , G08B21/24 , H04B5/00 , H04W4/04 , H04L29/08
CPC分类号： B60L11/182 , B60L3/12 , B60L11/1824 , B60L11/1844 , B60L11/1846 , B60L2200/12 , B60L2210/30 , B60L2230/16 , B60L2240/70 , B60L2250/10 , G08B21/24 , H04B5/0037 , H04L67/12 , H04W4/046 , H04W4/40 , Y02E60/721 , Y02T10/7005 , Y02T10/7088 , Y02T10/7241 , Y02T10/7291 , Y02T90/121 , Y02T90/122 , Y02T90/127 , Y02T90/128 , Y02T90/14 , Y02T90/16 , Y02T90/163 , Y02T90/169 , Y04S10/126 , Y04S30/14
摘要： It is intended to provide a safe non-contact charging environment that enables finding an electronic appliance that remains left in a vehicle before start of charging and preventing trouble that an electronic appliance breaks down by electromagnetic waves generated during charging by means of electromagnetic coupling. A process of checking to see that an electronic appliance remains left inside a vehicle, based on wireless communication information emitted by the electronic appliance left inside the vehicle is performed in advance. When it has been detected that an electronic appliance remains left, a charging current value is controlled according to an allowable current of the detected electronic appliance or an alert is generated to notify that the electronic appliance remains left.

6. 发明授权

US09349377B2 Audio encoding apparatus 有权
标题翻译：音频编码装置
公开(公告)号：US09349377B2
公开(公告)日：2016-05-24
申请号：US13706448
申请日：2012-12-06
申请人： RENESAS ELECTRONICS CORPORATION
发明人： Ryuji Mano
IPC分类号： G10L19/00 , G10L19/008 , G10L19/16
CPC分类号： G10L19/008 , G10L19/167
摘要： There is provided an audio encoding apparatus that can avoid that audio data becomes irreproducible after fast-forward play. A quantization unit quantizes and buffers audio data into a buffer unit. A stream generating unit puts buffered audio data in a frame where there is a header related to the audio data in a stream and/or in one or plural frames preceding that frame. As for a predetermined frame, the stream generating unit puts in a data field of the frame the whole of an audio data piece related to a header included in that frame and puts audio sample data following that audio sample in a remaining part of the data field. As for a frame not a predetermined one, it puts in a data field of the frame an audio data piece related to a header included in that frame and/or audio data pieces following that audio data piece.
摘要翻译：提供了一种音频编码装置，其可以避免在快进播放之后音频数据变得不可再现。量化单元将音频数据量化并缓冲到缓冲单元中。流生成单元将缓冲音频数据放置在帧中，其中存在与流之间的音频数据相关的头部和/或在该帧之前的一个或多个帧中。对于预定帧，流生成单元将与该帧中包含的标题相关的音频数据段的整体放在帧的数据字段中，并将该音频样本之后的音频采样数据放置在数据字段的剩余部分中。对于不是预定帧的帧，它将与该帧中包括的头部相关的音频数据片段和/或该音频数据片段之后的音频数据片段放入该帧的数据字段。

7. 发明授权

US08604617B2 Semiconductor device 有权
公开(公告)号：US08604617B2
公开(公告)日：2013-12-10
申请号：US13708207
申请日：2012-12-07
申请人： Renesas Electronics Corporation
发明人： Masayuki Furumiya , Yasutaka Nakahsiba , Akira Tanabe
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L21/823871 , H01L23/5225 , H01L23/528 , H01L23/5286 , H01L2223/6627 , H01L2924/0002 , H01L2924/12044 , H01L2924/1903 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.

8. 发明授权

US08068113B2 Display control semiconductor integrated circuit 有权
标题翻译：显示控制半导体集成电路
公开(公告)号：US08068113B2
公开(公告)日：2011-11-29
申请号：US11650417
申请日：2007-01-08
申请人： Masaru Iizuka , Iori Shiraishi , Sosuke Tsuji , Hiroto Kinno
发明人： Masaru Iizuka , Iori Shiraishi , Sosuke Tsuji , Hiroto Kinno
IPC分类号： G09G5/39 , G11C7/00 , G11C29/00
CPC分类号： G09G3/3648 , G09G2310/027 , G09G2330/08
摘要： The present invention provides a display control semiconductor integrated circuit having therein a RAM, capable of repairing a defective bit included in the RAM and improving the yield without significantly increasing the occupation area. A liquid crystal controller/driver in which a RAM for storing display data is provided in a chip and the storage capacity of the built-in RAM is determined according to the size of a display screen of a liquid crystal panel to be driven, includes a fuse circuit for setting a defect address, and a comparing circuit for comparing the defect address set in the fuse circuit with an input address. The liquid crystal controller/driver also has a redundant circuit, when the addresses match each other, for replacing the input address with an address that instructs the spare memory area and supplying the address to an address decoder.
摘要翻译：本发明提供了一种显示控制半导体集成电路，其中具有RAM，能够修复RAM中包含的有缺陷的位，并且在不显着增加占用面积的情况下提高产量。在芯片中设置用于存储显示数据的RAM的液晶控制器/驱动器，并且根据待驱动的液晶面板的显示屏幕的尺寸确定内置RAM的存储容量，包括用于设置缺陷地址的熔丝电路，以及用于将熔丝电路中设置的缺陷地址与输入地址进行比较的比较电路。当地址彼此匹配时，液晶控制器/驱动器还具有冗余电路，用用于指示备用存储器区域的地址替换输入地址并将地址提供给地址解码器。

9. 发明授权

US07969584B2 Measuring method including measuring angle of concave portion and irradiating light over concave portion 有权
标题翻译：测量方法包括测量凹部的角度和在凹部上照射光
公开(公告)号：US07969584B2
公开(公告)日：2011-06-28
申请号：US12314584
申请日：2008-12-12
申请人： Hidetaka Nambu
发明人： Hidetaka Nambu
IPC分类号： G01B11/14
CPC分类号： G01B11/22 , G01B11/046 , G01B11/26
摘要： The measuring method for providing a precise determination of a geometry of a concave portion is provided. The measuring method includes: measuring an angle of a side wall of a concave portion with a bottom surface thereof formed in an insulating film (operation S1); defining a plurality of parameter groups including an angle of the side wall of the concave portion with the bottom surface, a dimensional width and a dimensional depth and preparing library containing a plurality of waveforms of reflected lights respectively correlated with such plurality of parameter groups (operation S2); an operation of irradiating light over the concave portion (operation S4); an operation of detecting reflected light (operation S5); referencing the waveform of reflected light with the waveform selected from the library (operation S6); and when a difference between the waveform of reflected light and the waveform selected from the library is lower than a specified value, then assigning the parameter such as the dimensional width of the concave portion and the like correlated with the selected waveform for an optimum value to determine the geometry of the concave portion. The angle of the side wall of the concave portion with the bottom surface thereof in the parameter groups of the library is a measured angle in the operation S1.
摘要翻译：提供了用于提供凹部的几何形状的精确确定的测量方法。测量方法包括：测量在绝缘膜中形成的底部表面的凹部的侧壁的角度（操作S1）; 定义多个参数组，包括凹部的侧壁与底面的角度，尺寸宽度和尺寸深度，并准备包含分别与这些多个参数组相关联的多个反射光波形的库（操作 S2）; 在凹部上照射光的动作（动作S4）。检测反射光的动作（动作S5）。利用从库中选择的波形参考反射光的波形（操作S6）; 并且当反射光的波形与从库中选择的波形之间的差异小于指定值时，则将诸如凹部等的尺寸宽度的参数与所选波形相关联的参数与最佳值分配给确定凹部的几何形状。库的参数组中的凹部的侧壁与其底面的角度是操作S1中的测量角度。

10. 发明授权

US10546839B2 Semiconductor device and electronic apparatus including semiconductor chips including an insulated gate bipolar transistor and a diode 有权
公开(公告)号：US10546839B2
公开(公告)日：2020-01-28
申请号：US16146097
申请日：2018-09-28
申请人： Renesas Electronics Corporation
发明人： Akira Muto , Norio Kido
IPC分类号： H01L25/07 , H01L23/28 , H01L25/18 , H01L23/00 , H02P25/092 , H01L23/31 , H01L23/498 , H02P27/06
摘要： An electronic apparatus includes a wiring board including a main surface on which a first wiring and a second wiring are formed, a first semiconductor device mounted on the main surface of the wiring board, and a second semiconductor device mounted on the main surface of the wiring board. Each of the first semiconductor device and the second semiconductor device includes a first semiconductor chip including an insulated gate bipolar transistor, a second semiconductor chip including a diode, a first lead electrically connected to an emitter electrode pad formed on a first front surface of the first semiconductor chip, a second lead electrically connected to an anode electrode pad formed on a second front surface of the second semiconductor chip, and a first terminal electrically connected to a collector electrode formed on a first back surface of the first semiconductor chip.

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