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1. 发明授权

US08796782B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08796782B2
公开(公告)日：2014-08-05
申请号：US13554560
申请日：2012-07-20
申请人： Takayuki Igarashi
发明人： Takayuki Igarashi
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L27/0629
摘要： A polysilicon film that serves as a resistance element is formed. The polysilicon film is patterned to a predetermined shape. CVD oxide films covering the patterned polysilicon film are etched thereby removing the portion of the CVD oxide film where the contact region is formed, leaving the portion covering the portion of the polysilicon film that serves as the resistor main body. BF2 is implanted by using the portions of the remaining CVD oxide films covering the polysilicon film as an implantation mask thereby forming a high concentration region in the contact region.
摘要翻译：形成用作电阻元件的多晶硅膜。将多晶硅膜图案化为预定的形状。蚀刻覆盖图案化多晶硅膜的CVD氧化物膜，从而除去形成有接触区域的CVD氧化膜的部分，留下覆盖作为电阻体主体的多晶硅膜的部分的部分。通过使用覆盖多晶硅膜的剩余CVD氧化物膜的部分作为注入掩模来注入BF2，从而在接触区域中形成高浓度区域。

2. 发明申请

US20090200610A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090200610A1
公开(公告)日：2009-08-13
申请号：US12401889
申请日：2009-03-11
申请人： Tetsuya Nitta , Takayuki Igarashi
发明人： Tetsuya Nitta , Takayuki Igarashi
IPC分类号： H01L27/12
CPC分类号： H01L29/0847 , H01L21/26586 , H01L21/761 , H01L21/76281 , H01L21/76283 , H01L29/0684 , H01L29/0692 , H01L29/0852 , H01L29/1095 , H01L29/42368 , H01L29/7317 , H01L29/7824 , H01L29/7835 , H01L29/7881 , H01L29/8611
摘要： An N− layer is formed on a semiconductor substrate, with a BOX layer interposed. In the N− layer, a trench isolation region is formed to surround the N− layer to be an element forming region. The trench isolation region is formed to reach the BOX layer, from the surface of the N− layer. Between trench isolation region and the N− layer, a P type diffusion region 10a is formed. The P type diffusion region is formed continuously without any interruption, to be in contact with the entire surface of an inner sidewall of the trench isolation region surrounding the element forming region. In the element forming region of the N− layer, a prescribed semiconductor element is formed. Thus, a semiconductor device is formed, in which electrical isolation is established reliably, without increasing the area occupied by the element forming region.
摘要翻译：在半导体衬底上形成有一个BOX层的N层。在N层中，形成沟槽隔离区域以包围N层以成为元件形成区域。沟槽隔离区形成为从N层的表面到达BOX层。在沟槽隔离区域和N层之间形成P型扩散区域10a。连续形成P型扩散区域而不间断地与围绕元件形成区域的沟槽隔离区域的内侧壁的整个表面接触。在N层的元件形成区域中，形成规定的半导体元件。因此，形成了可靠地建立电绝缘的半导体器件，而不增加元件形成区域占据的面积。

3. 发明授权

US06426533B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06426533B2
公开(公告)日：2002-07-30
申请号：US09866849
申请日：2001-05-30
申请人： Takayuki Igarashi , Yoshitaka Ohtsu
发明人： Takayuki Igarashi , Yoshitaka Ohtsu
IPC分类号： H01L2994
CPC分类号： H01L21/8249
摘要： A structure of a BiCMOS transistor hindering over-etching of source/drain regions of a MOS transistor and a manufacturing method thereof are provided. A polysilicon film that is to be a gate electrode lower layer of a MOS transistor is formed, and thereon, another polysilicon film that is to be a gate electrode upper layer of the MOS transistor as well as to be a base electrode of a bipolar transistor is formed. Thereafter, etching is conducted to form the polysilicon film to be the base electrode of the bipolar transistor and the gate electrode at the same time. Here, an oxide film shown in FIG. 4 serves as a protective film, thereby hindering over-etching of n type and p type wells to be active regions of respective MOS transistors.
摘要翻译：提供阻止MOS晶体管的源/漏区的过蚀刻的BiCMOS晶体管的结构及其制造方法。形成作为MOS晶体管的栅电极下层的多晶硅膜，并且在其上形成作为MOS晶体管的栅电极上层的另一多晶硅膜以及双极晶体管的基极形成了。此后，进行蚀刻以同时形成作为双极晶体管和栅电极的基极的多晶硅膜。这里，图1所示的氧化物膜 4用作保护膜，从而阻碍n型和p型阱的过蚀刻成为各个MOS晶体管的有源区。

4. 发明申请

US20130043542A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130043542A1
公开(公告)日：2013-02-21
申请号：US13554560
申请日：2012-07-20
申请人： Takayuki IGARASHI
发明人： Takayuki IGARASHI
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L27/0629
摘要： A polysilicon film that serves as a resistance element is formed. The polysilicon film is patterned to a predetermined shape. CVD oxide films covering the patterned polysilicon film are etched thereby removing the portion of the CVD oxide film where the contact region is formed, leaving the portion covering the portion of the polysilicon film that serves as the resistor main body. BF2 is implanted by using the portions of the remaining CVD oxide films covering the polysilicon film as an implantation mask thereby forming a high concentration region in the contact region.
摘要翻译：形成用作电阻元件的多晶硅膜。将多晶硅膜图案化为预定的形状。蚀刻覆盖图案化多晶硅膜的CVD氧化物膜，从而除去形成有接触区域的CVD氧化膜的部分，留下覆盖作为电阻体主体的多晶硅膜的部分的部分。通过使用覆盖多晶硅膜的剩余CVD氧化物膜的部分作为注入掩模来注入BF2，从而在接触区域中形成高浓度区域。

5. 发明申请

US20070166969A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070166969A1
公开(公告)日：2007-07-19
申请号：US11623473
申请日：2007-01-16
申请人： Shinichiro YANAGI , Yoshitaka Otsu , Takayuki Igarashi , Yasuki Yoshihisa
发明人： Shinichiro YANAGI , Yoshitaka Otsu , Takayuki Igarashi , Yasuki Yoshihisa
IPC分类号： H01L21/425
CPC分类号： H01L27/0629 , H01L21/823807 , H01L21/823814 , H01L21/823857 , H01L21/823878 , H01L21/823892
摘要： The invention provides a semiconductor device capable of protecting a low-concentration implantation region from contamination, and a method for manufacturing the same. A photoresist is formed on a TEOS film which is formed all over a substrate, and removed by photo engraving so as to be partially left. This photo resist is of a positive or negative type opposite to a type of a photoresist used for formation of a p-offset region and a diffusion region. Then, the TEOS film is etched back except for a portion just under the photoresist. Thereby, a contamination protective film is formed just under the photoresist, and a side wall is formed on a side face of a gate electrode.
摘要翻译：本发明提供能够保护低浓度注入区域免受污染的半导体器件及其制造方法。在TEOS膜上形成光致抗蚀剂，TEOS膜形成在整个基板上，并通过照相雕刻被去除，以便部分留下。该光致抗蚀剂是与用于形成p偏移区域和扩散区域的光致抗蚀剂类型相反的正或负型。然后，除了正好在光致抗蚀剂下面的部分之外，TEOS膜被回蚀刻。由此，在光刻胶的正下方形成污染保护膜，在栅电极的侧面形成有侧壁。

6. 发明授权

US06808973B2 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06808973B2
公开(公告)日：2004-10-26
申请号：US10265747
申请日：2002-10-08
申请人： Yoshitaka Ootsu , Takayuki Igarashi
发明人： Yoshitaka Ootsu , Takayuki Igarashi
IPC分类号： H01L218242
CPC分类号： H01L27/0629
摘要： In a capacitor formation area A1, a capacitor C1 is formed. The capacitor is constituted by a lower-layer electrode-use polysilicon layer 105 (lower-layer electrode) formed on a LOCOS separation film 101, a nitride film 106 (dielectric film) and an upper-layer electrode-use polysilicon layer 107 (upper-layer electrode). In this case, the lower-layer electrode-use polysilicon layer 105 and the nitride film 106 are formed as the same plane pattern. In CMOS formation area A2, an NMOS transistor Q11 is formed on a P-well region 102 and a PMOS transistor Q12 is formed in an N-well region 103. Both of the gate electrodes of NMOS transistor Q11 and NMOS transistor Q21 are formed by the upper-layer electrode-use polysilicon layer 107.
摘要翻译：在电容器形成区域A1中，形成电容器C1。电容器由在LOCOS分离膜101上形成的下层电极用多晶硅层105（下层电极），氮化膜106（电介质膜）和上层电极用多晶硅层107（上部层电极）。在这种情况下，下层电极用多晶硅层105和氮化物膜106形成为相同的平面图案。在CMOS形成区域A2中，NMOS晶体管Q11形成在P阱区域102上，PMOS晶体管Q12形成在N阱区域103中。NMOS晶体管Q11和NMOS晶体管Q21的栅电极都由上层电极用多晶硅层107。

7. 发明授权

US06009057A Disc drive equipped with identification indication reader provided in an optical disc 失效
标题翻译：光盘驱动器配备有在光盘中提供的识别指示读取器
公开(公告)号：US06009057A
公开(公告)日：1999-12-28
申请号：US936988
申请日：1997-09-25
申请人： Ken'ichi Furukawa , Takayuki Igarashi
发明人： Ken'ichi Furukawa , Takayuki Igarashi
IPC分类号： G11B19/12 , G11B7/00 , G11B7/004 , G11B7/005 , G11B23/40
CPC分类号： G11B23/40
摘要： A disc drive is provided with an optical pick-up for reading data recorded in a program area of an optical disc; and a photo-interrupter for optically reading out bar information of a bar code which is arranged in an arc shape within at least a part of an annular bar code area provided on the optical disc between the program area and a clamping area of the optical disk so as to be readable from either side of the top and underside surfaces of the optical disk, wherein the photo-interrupter is located on the opposite side of the optical disc relative to the optical pick-up when the optical disc is loaded in the disc drive to read the information of the bar code from that position. Preferably, the photo-interrupter is provided on a clamper support which is provided for supporting a disc clamper for holding the optical disc between the disc clamper and a turntable for rotating the optical disc. This arrangement makes it easy to provide the photo-interrupter for reading the bar code.
摘要翻译：磁盘驱动器设置有用于读取记录在光盘的程序区域中的数据的光学拾取器; 以及光学断路器，用于光学地读出条形码的条形信息，所述条形码在所述程序区域与所述光盘的夹持区域之间设置在所述光盘上的环形条形码区域的至少一部分内被设置成弧形以便从光盘的顶面和下表面的任一侧可读取，其中当光盘装载在光盘中时，光断续器相对于光学拾取器位于光盘的相对侧上驱动从该位置读取条形码的信息。优选地，光断续器设置在夹持器支撑件上，该夹持器支撑件用于支撑用于将光盘夹持在盘夹持器和用于旋转光盘的转台之间的盘夹持器。这种布置使得容易地提供用于读取条形码的光电断路器。

8. 发明授权

US06002657A Apparatus for reading identification indication provided on an optical disc and method therefor 失效
标题翻译：用于读取在光盘上提供的识别指示的装置及其方法
公开(公告)号：US06002657A
公开(公告)日：1999-12-14
申请号：US939248
申请日：1997-09-29
申请人： Ken'ichi Furukawa , Takayuki Igarashi
发明人： Ken'ichi Furukawa , Takayuki Igarashi
IPC分类号： G11B19/12 , G11B7/00 , G11B7/004 , G11B23/40
CPC分类号： G11B23/40
摘要： An apparatus for reading an identification indication such as a bar code provided on an optical disk is provided. The bar code is provided in at least a part of an annular-shaped bar code area formed between a program area and a clamping area of the optical disc, and the bar code represents predetermined information and has a reading end representation at the rear portion of the bar code in the rotational direction of the optical disc. The apparatus comprises a detector for optically acquiring the information of the bar code and a discriminating section for discriminating based on the output from the detector as to whether the bar code is accurately read. The discriminating section includes a first determining section for determining based on the output from the detector as to whether the data acquired by the detector contains data of the reading end representation or an equivalent thereof; and a second determining section for determining based on the result of the determination of the first determining section as to whether or not the data acquired by the detector reaches a predetermined amount of data of the bar code. The discriminating section discriminates that the bar code is accurately read in the case where the first determining section determines that the data acquired by the detector contains data of the reading end representation or an equivalent thereof, and the second determining section determines that the data acquired by the detector reaches the predetermined amount of data of the bar code.
摘要翻译：提供一种用于读取诸如设置在光盘上的条形码的识别指示的装置。条形码设置在形成在光盘的程序区域和夹紧区域之间的环状条形码区域的至少一部分中，并且条形码表示预定信息，并且在后面部分具有读取结束表示条形码在光盘的旋转方向上。该装置包括用于光学地获取条形码的信息的检测器和用于基于检测器的输出来判别条形码是否被准确读取的识别部分。鉴别部分包括第一确定部分，用于基于检测器的输出确定检测器获取的数据是否包含读取结束表示的数据或其等同物; 以及第二确定部分，用于基于第一确定部分的确定结果确定由检测器获取的数据是否达到条形码的预定量的数据。鉴别部分鉴别在第一确定部分确定由检测器获取的数据包含读取结束表示的数据或其等同物的情况下，准确读取条形码，并且第二确定部分确定由检测器达到条形码的预定数量的数据。

9. 外观设计

USD661262S1 Light emitting diode 有权
公开(公告)号：USD661262S1
公开(公告)日：2012-06-05
申请号：US29360431
申请日：2010-04-26
申请人： Takayuki Igarashi , Ryo Oishi , Toshimasa Takao , Tetsuya Yagi
设计人： Takayuki Igarashi , Ryo Oishi , Toshimasa Takao , Tetsuya Yagi
CPC分类号： H01L33/56 , H01L25/0753 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01L2924/00

10. 发明申请

US20110198726A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110198726A1
公开(公告)日：2011-08-18
申请号：US13095352
申请日：2011-04-27
申请人： Tetsuya NITTA , Takayuki Igarashi
发明人： Tetsuya NITTA , Takayuki Igarashi
IPC分类号： H01L29/735
CPC分类号： H01L29/0847 , H01L21/26586 , H01L21/761 , H01L21/76281 , H01L21/76283 , H01L29/0684 , H01L29/0692 , H01L29/0852 , H01L29/1095 , H01L29/42368 , H01L29/7317 , H01L29/7824 , H01L29/7835 , H01L29/7881 , H01L29/8611
摘要： An N− layer is formed on a semiconductor substrate, with a BOX layer interposed. In the N− layer, a trench isolation region is formed to surround the N− layer to be an element forming region. The trench isolation region is formed to reach the BOX layer, from the surface of the N− layer. Between trench isolation region and the N− layer, a P type diffusion region 10a is formed. The P type diffusion region is formed continuously without any interruption, to be in contact with the entire surface of an inner sidewall of the trench isolation region surrounding the element forming region. In the element forming region of the N− layer, a prescribed semiconductor element is formed. Thus, a semiconductor device is formed, in which electrical isolation is established reliably, without increasing the area occupied by the element forming region.
摘要翻译：在半导体衬底上形成有一个BOX层的N层。在N层中，形成沟槽隔离区域以包围N层以成为元件形成区域。沟槽隔离区形成为从N层的表面到达BOX层。在沟槽隔离区域和N层之间形成P型扩散区域10a。连续形成P型扩散区域而不间断地与围绕元件形成区域的沟槽隔离区域的内侧壁的整个表面接触。在N层的元件形成区域中，形成规定的半导体元件。因此，形成了可靠地建立电绝缘的半导体器件，而不增加元件形成区域占据的面积。

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