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1. 发明授权

US09666793B2 Method of manufacturing magnetoresistive element(s) 有权
公开(公告)号：US09666793B2
公开(公告)日：2017-05-30
申请号：US14979445
申请日：2015-12-27
申请人： Shanghai Ciyu Information Technologies Co., Ltd.
发明人： Yimin Guo
IPC分类号： H01L21/336 , H01L43/12 , G11C11/16 , G11C11/00 , H01L43/08 , H01L27/22 , H01L43/02
CPC分类号： H01L43/12 , G11C11/00 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A planar STT-MRAM includes apparatus, made by a method of operating and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a ferromagnetic recording layer forming a flux closure with a self-aligned ferromagnetic soft adjacent layer which has an electric field enhanced perpendicular anisotropy through an interface interaction with a dielectric functional layer. The energy switch barrier of the soft adjacent layer is reduced under an electric field along a perpendicular direction with a proper voltage on a digital line from a control circuitry; accordingly, the in-plane magnetization of the recording layer is readily reversible in a low spin-transfer switching current.

2. 发明授权

US09257637B2 Method of manufacturing MRAM memory elements 有权
标题翻译：制造MRAM存储元件的方法
公开(公告)号：US09257637B2
公开(公告)日：2016-02-09
申请号：US14170645
申请日：2014-02-03
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/12 , H01L43/02
CPC分类号： H01L43/12 , H01L43/02
摘要： A STT-MRAM comprises a method to form magnetic random access memory (MRAM) element array having ultra small dimensions using double photo exposures and etch of their hard masks. The memory cells are located at the cross section of two ultra-narrow photo-resist lines suspended between two large photo-resist bases. Array of MRAM cells with small dimension is formed by a third magnetic etch.
摘要翻译： STT-MRAM包括使用双重曝光和其硬掩模的蚀刻来形成具有超小尺寸的磁性随机存取存储器（MRAM）元件阵列的方法。存储单元位于悬挂在两个大光抗蚀基底之间的两个超窄光致抗蚀剂线的横截面上。具有小尺寸的MRAM单元的阵列通过第三磁性蚀刻形成。

3. 发明授权

US11241150B2 Flexible digital ureteroscope 有权
公开(公告)号：US11241150B2
公开(公告)日：2022-02-08
申请号：US15649485
申请日：2017-07-13
申请人： NINGBO Wise OptoMech Technology Corporation
发明人： Geping Liu , Xibo Wei , Xiyi Wei
IPC分类号： A61B1/307 , A61B1/00 , A61B1/05 , H04N5/225 , H04N5/374 , A61B1/06 , A61B1/12 , A61B1/005 , A61B1/018 , A61L29/12 , A61B1/07 , A61B1/015
摘要： The present invention discloses a flexible digital ureteroscope that is at least partially disposable. The ureteroscope comprises a single-use catheter and a handle. The catheter comprises a distal end, a bend portion, and a proximal portion. The distal end has a rigid or semi-rigid shell that houses a set of micro lenses, an image sensor microchip, and a plurality of LED light sources. A working channel extends along the entire catheter and is coupled to a working channel port on the handle to receive various medical devices and irrigation lines during an endoscopic procedure. In addition, the catheter includes one or more steering wires to control the distal end to bend towards a desired direction. The rigid or semi-rigid shell of the distal end is made of a mix of polymer composite material with graphene nano-filler for enhancing thermal dissipation. The handle may be a single-use handle or a reusable handle. In case the handle is a reusable handle, it includes a battery module and a wireless communication module for communicating with a host machine wirelessly. In case the handle is a single-use handle, to reduce cost, the handle does not include a battery module and/or a wireless communication module. Rather, the single-use handle includes a host interface for receiving power from the host machine and transmits image data to the host machine.

4. 发明授权

US09627983B2 Circuit suppressing excessive current in startup phase of a voltage converter and method thereof 有权
公开(公告)号：US09627983B2
公开(公告)日：2017-04-18
申请号：US14788177
申请日：2015-06-30
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Yu-Ming Chen , Jung-Pei Cheng , Pei-Lun Huang
IPC分类号： H02M3/335 , H02M1/36
CPC分类号： H02M3/33507 , H02M1/36
摘要： A control circuit and the control method for controlling the current voltage converter of a power conversion system in the start-up phase are disclosed. A first voltage is applied to the non-inverting input terminal of the comparator and a reference voltage is applied to the inverting input terminal of the comparator. When the first voltage exceeds the reference voltage, the comparison result from the comparator triggers the frequency of the clock signal generated by the oscillator to reduce preventing the primary current flowing through the primary winding of the transformer exceeding a pre-set value.

5. 发明授权

US09564516B2 Method of making integrated MOSFET-schottky diode device with reduced source and body kelvin contact impedance and breakdown voltage 有权
标题翻译：制造集成MOSFET肖特基二极管器件的方法，具有降低的源极和体开口接触阻抗和击穿电压
公开(公告)号：US09564516B2
公开(公告)日：2017-02-07
申请号：US14602274
申请日：2015-01-22
申请人： Alpha and Omega Semiconductor Incorporated
发明人： Ji Pan
IPC分类号： H01L29/66 , H01L29/423 , H01L29/78 , H01L29/08 , H01L29/861 , H01L29/872 , H01L29/06 , H01L29/10 , H01L29/417 , H01L29/47 , H01L21/265 , H01L21/28
CPC分类号： H01L29/66734 , H01L21/26586 , H01L21/28238 , H01L29/0623 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/4236 , H01L29/47 , H01L29/66128 , H01L29/66143 , H01L29/66719 , H01L29/66727 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/8611 , H01L29/872
摘要： A MOSFET device and fabrication method are disclosed. The MOSFET has a drain in chip plane with an epitaxial layer overlay atop. The MOSFET further comprises: a Kelvin-contact body and an embedded Kelvin-contact source; a trench gate extending into the epitaxial layer; a lower contact trench extending through the Kelvin-contact source and at least part of the Kelvin-contact body defining respectively a vertical source-contact surface and a vertical body-contact surface; a patterned dielectric layer atop the Kelvin-contact source and the trench gate; a patterned top metal layer. As a result: a planar ledge is formed atop the Kelvin-contact source; the MOSFET device exhibits a lowered body Kelvin contact impedance and, owing to the presence of the planar ledge, a source Kelvin contact impedance that is lower than an otherwise MOSFET device without the planar ledge; and an integral parallel Schottky diode is also formed.
摘要翻译：公开了MOSFET器件和制造方法。 MOSFET具有在芯片平面上的漏极，外延层覆盖在顶部。 MOSFET还包括：开尔文接触体和嵌入式开尔文接触源; 延伸到外延层中的沟槽栅; 延伸穿过开尔文接触源的下接触沟槽和分别定义垂直的源极接触表面和垂直体接触表面的开尔文接触体的至少一部分; 位于开尔文接触源和沟槽栅极顶部的图案化介电层; 图案顶层金属层。结果：在开尔文接触源顶部形成一个平面凸缘; MOSFET器件表现出较低的体积开尔文接触阻抗，并且由于存在平面凸缘，源开尔文接触阻抗低于不具有平面凸缘的另外的MOSFET器件; 并且还形成一个整体的并联肖特基二极管。

6. 发明授权

US09548667B2 Constant on-time (COT) control in isolated converter 有权
标题翻译：隔离变换器中的恒定导通时间（COT）控制
公开(公告)号：US09548667B2
公开(公告)日：2017-01-17
申请号：US14562733
申请日：2014-12-07
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Tien-Chi Lin , Chih-Yuan Liu , Yung-Chuan Hsu , Pei-Lun Huang
IPC分类号： H02M3/335
CPC分类号： H02M3/33592 , H02M3/335 , H02M3/33507 , H02M3/33546 , H02M3/33553 , Y02B70/1475
摘要： The present invention discloses a constant on-time isolated converter comprising a transformer with a primary side and a secondary side. The primary side is connected to an electronic switch and secondary-side is connected to a load and a processor. The processor is connected to a driver on primary side through at least one coupling element and to the electronic switch. The processor receives an output voltage or an output current across the load generating a control signal accordingly. The driver receives the control signal through the coupling element and accordingly changes the ON/OFF state of the electronic switch, regulating the output voltage and the output current via the transformer, where the duration of the ON/OFF state of the electronic switch is determined between the moment control signal changes from negative to positive and the moment it changes from positive to negative to achieve a high-speed load transient response.
摘要翻译：本发明公开了一种具有初级侧和次级侧的变压器的恒定导通时间隔离变换器。初级侧连接到电子开关，次级侧连接到负载和处理器。处理器通过至少一个耦合元件和电子开关连接到初级侧的驱动器。处理器接收负载的输出电压或输出电流，从而相应地产生控制信号。驱动器通过耦合元件接收控制信号，从而改变电子开关的ON / OFF状态，通过变压器调节输出电压和输出电流，确定电子开关的ON / OFF状态瞬间控制信号从负变为正，瞬间从正变为负，达到高速负载瞬态响应。

7. 发明授权

US10522589B2 Method of making a magnetoresistive element 有权
公开(公告)号：US10522589B2
公开(公告)日：2019-12-31
申请号：US14073844
申请日：2013-11-06
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L27/22 , H01L43/12 , H01L43/00
摘要： A magnetoresistive element comprises a novel Boron-absorbing cap multilayer provided on the top surface of an amorphous CoFeB (or CoB, FeB) ferromagnetic recording layer. As the magnetoresistive film is thermally annealed, a crystallization process occurs to form bcc CoFe grains having epitaxial growth with (100) plane parallel to the surface of the tunnel barrier layer as Boron elements migrate into the novel cap layer. Removing the top portion of the cap layer by means of sputtering etch or RIE etch processes followed by optional oxidization process, a thin thermally stable portion of cap layer is remained on top of the recording layer with low damping constant. Accordingly, a reduced write current is achieved for spin-transfer torque MRAM application.

8. 发明授权

US09742276B2 Alternating current injection for constant-on time buck converter—a regulator control method 有权
公开(公告)号：US09742276B2
公开(公告)日：2017-08-22
申请号：US14838058
申请日：2015-08-27
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Kong Soon Ng , Wei-Chi Huang , Jean-Shin Wu
IPC分类号： H02M3/158 , H02M3/156
CPC分类号： H02M3/158 , H02M3/156
摘要： The present invention discloses a voltage control method. At first, the load voltage of the load is divided to generate a feedback voltage. The feedback voltage and a triangular wave of a triangular wave periodic signal, including the positive voltage and negative voltage, are combined to generate a sum signal. The sum signal is compared with a target voltage, and when the sum signal is less than the target voltage signal, a control signal is generated to control the switches to turn on or off. Finally, the switch receives the control signal and accordingly providing an input voltage to update and stabilize the load voltage.

9. 发明授权

US09741929B2 Method of making a spin-transfer-torque magnetoresistive random access memory (STT-MRAM) 有权
公开(公告)号：US09741929B2
公开(公告)日：2017-08-22
申请号：US14710616
申请日：2015-05-13
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L21/00 , H01L43/12 , H01L43/02 , H01L43/08 , H01L43/10 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A method of making a novel STT-MRAM is disclosed, wherein the STT-MRAM comprises a novel apparatus along with a method of operating a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory elements having spin-transfer torques acting on a recording layer from a MTJ stack and a novel magnetoresistance with a spin-valve layer. The spin-valve layer is field-reversible between two stable magnetization states either parallel or anti-parallel to the fixed reference layer magnetization through a set/reset current pulse along a conductive line provided by a control circuitry, accordingly, the magetoresistive element is pre-configured into a reading mode having canceled spin-transfer torques or a recording mode having additive spin-transfer torques.

10. 发明授权

US09577543B2 Constant on time (COT) control in isolated converter 有权
标题翻译：独立转换器中的恒定时间（COT）控制
公开(公告)号：US09577543B2
公开(公告)日：2017-02-21
申请号：US14562735
申请日：2014-12-07
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Tien-Chi Lin , Chih-Yuan Liu , Yueh-Ping Yu , Pei-Lun Huang
IPC分类号： H02M3/335
CPC分类号： H02M3/33592 , H02M3/33507 , Y02B70/1475
摘要： The present invention discloses a constant on-time isolated converter comprising a transformer with a primary side and a secondary side. The primary side is connected to an electronic switch and secondary-side is connected to a load and a processor. The processor is connected to a driver on primary side through at least one coupling element and to the electronic switch. The processor receives an output voltage or an output current across the load generating a control signal accordingly. The driver receives the control signal through the coupling element and accordingly changes the ON/OFF state of the electronic switch, regulating the output voltage and the output current via the transformer, where the duration of the ON/OFF state of the electronic switch is determined between the moment control signal changes from negative to positive and the moment it changes from positive to negative to achieve a high-speed load transient response.
摘要翻译：本发明公开了一种具有初级侧和次级侧的变压器的恒定导通时间隔离变换器。初级侧连接到电子开关，次级侧连接到负载和处理器。处理器通过至少一个耦合元件和电子开关连接到初级侧的驱动器。处理器接收负载的输出电压或输出电流，从而产生相应的控制信号。驱动器通过耦合元件接收控制信号，从而改变电子开关的ON / OFF状态，通过变压器调节输出电压和输出电流，确定电子开关的ON / OFF状态瞬间控制信号从负变为正，瞬间从正变为负，达到高速负载瞬态响应。

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