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    • 1. 发明授权
    • Method of plasma etching Ga-based compound semiconductors
    • 等离子体蚀刻方法Ga基化合物半导体
    • US08338308B2
    • 2012-12-25
    • US12638741
    • 2009-12-15
    • Weibin QiuLynford L. Goddard
    • Weibin QiuLynford L. Goddard
    • H01L21/302
    • H01L21/30621H01J37/32082H01J37/32165
    • A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl4 gas into the chamber, flowing Ar gas into the chamber, and flowing H2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.
    • 等离子体蚀刻Ga基化合物半导体的方法包括提供与处理室相邻的处理室和源电极。 处理室含有包含Ga基化合物半导体的样品。 样品与电连接到第一电源的压板接触,并且源极电连接到第二电源。 该方法包括将SiCl 4气体流入室内,使Ar气流入室内,并将H 2气体流入室内。 RF功率独立地提供给源电极和压板。 基于处理室中的气体产生等离子体,并蚀刻与表面的一个或多个掩模部分相邻的样品表面的区域,以形成基本平滑的蚀刻表面,其包括在掩模部分下方具有基本垂直壁的特征 。
    • 3. 发明授权
    • Method for production of a brake stand-by function
    • 制动器待机功能的生产方法
    • US07996137B2
    • 2011-08-09
    • US11632986
    • 2005-07-08
    • Stephan GroitzschTorsten Cress
    • Stephan GroitzschTorsten Cress
    • B60T7/12
    • B60T8/4854B60T7/12B60T8/3275B60T8/4077B60T2201/12
    • In a method of changing the trigger threshold of a brake stand-by function of a vehicle brake, the brake stand-by function generates brake pressure in wheel brakes without application of a brake pedal. The trigger threshold value for the brake stand-by function is determined by the following steps: a) determining an average return speed of an accelerator pedal; b) changing the trigger threshold value for the brake stand-by function depending on the determined average return speed of the accelerator pedal. The method allows reducing the number of spurious releases of the brake stand-by function, which a sportive driving style brings about.In another embodiment of the method, the position of the accelerator pedal is used to change the trigger threshold value for the brake stand-by function.
    • 在改变车辆制动器的制动待机功能的触发阈值的方法中,制动待机功能在不施加制动踏板的情况下产生车轮制动器中的制动压力。 制动待机功能的触发阈值由以下步骤决定:a)确定加速踏板的平均回程速度; b)根据确定的加速踏板的平均回程速度,改变制动待机功能的触发阈值。 该方法允许减少制动待机功能的杂散释放次数,这是运动型驾驶风格带来的。 在该方法的另一实施例中,加速踏板的位置用于改变制动待机功能的触发阈值。