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1. 发明授权

US07804042B2 Pryometer for laser annealing system compatible with amorphous carbon optical absorber layer 有权
标题翻译：用于与无定形碳光吸收层兼容的激光退火系统的脉冲计
公开(公告)号：US07804042B2
公开(公告)日：2010-09-28
申请号：US11764738
申请日：2007-06-18
申请人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
发明人： Jiping Li , Bruce E. Adams , Timothy N. Thomas , Aaron Muir Hunter , Abhilash J. Mayur , Rajesh S. Ramanujam
IPC分类号： B23K26/00
CPC分类号： B23K26/0665 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/18 , B23K2101/40
摘要： In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a fluorescence emission band from the optical components of the laser system, the pyrometer response band lying in a wavelength region at which the optical absorber layer on the workpiece has an optical absorption coefficient as great as or greater than the underlying workpiece. A multi-layer razor-edge interference filter having a 5-8 nm wavelength cut-off edge transition provides the cut-off of the laser emission at the bottom end of the pyrometer response band.
摘要翻译：在用于诸如半导体晶片的工件的激光退火系统中，在位于激光发射带和来自激光系统的光学部件的荧光发射带之间的狭窄窗口内建立高温计波长响应带，高温计响应带位于工件上的光吸收层的光吸收系数大于或大于下面工件的波长区域。具有5-8nm波长截止边缘跃迁的多层剃刀边缘干涉滤光器提供在高温计响应带的底端处的激光发射的截止。

2. 发明授权

US07733095B2 Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode 有权
标题翻译：用于在与基座电极匹配的RF偏置阻抗下进行晶片级电弧检测的装置
公开(公告)号：US07733095B2
公开(公告)日：2010-06-08
申请号：US11893353
申请日：2007-08-15
申请人： John Pipitone , John C. Forster
发明人： John Pipitone , John C. Forster
IPC分类号： H01H9/50 , C23C14/34
CPC分类号： C23C14/54 , C23C14/345 , H01J37/321 , H01J37/32183 , H01J37/32944
摘要： Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator.
摘要翻译：使用耦合到阈值比较器的RF瞬态传感器和响应于阈值比较器的系统控制器在等离子体反应器中提供晶片级电弧检测。

3. 发明授权

US07575986B2 Gate interface relaxation anneal method for wafer processing with post-implant dynamic surface annealing 有权
标题翻译：具有植入后动态表面退火的晶片处理的栅极界面弛豫退火方法
公开(公告)号：US07575986B2
公开(公告)日：2009-08-18
申请号：US11835660
申请日：2007-08-08
申请人： Christopher Sean Olsen , Sunderraj Thirupapuliyur
发明人： Christopher Sean Olsen , Sunderraj Thirupapuliyur
IPC分类号： H01L21/04
CPC分类号： H01L21/28202 , H01L21/28176 , H01L21/28185 , H01L21/324 , H01L29/518 , H01L29/6659
摘要： Defects and fixed charge in a gate dielectric near the gate dielectric-substrate interface are reduced by performing a gate dielectric relaxation anneal step prior to source-drain ion implantation, in which the wafer temperature is ramped gradually to near a melting temperature of the substrate equal to a peak post-ion implantation anneal peak temperature. The ramping rates are sufficiently gradual so that the gate dielectric is held above its reflow temperature for a significant duration.
摘要翻译：通过在源极 - 漏极离子注入之前执行栅极电介质弛豫退火步骤来减小在栅极电介质 - 衬底界面附近的栅极电介质中的缺陷和固定电荷，其中晶片温度逐渐倾斜到基底的熔融温度附近相等到峰离子注入退火峰值温度。斜坡速率是足够的渐进，使得栅极电介质保持在其回流温度以上持续很长的时间。

4. 发明授权

US07521370B2 Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power 有权
标题翻译：通过控制源功率和偏置功率的室参数，相对于从包括离子密度，晶片电压，蚀刻速率和晶片电流的组中选择的两个等离子体参数操作等离子体反应器室的方法
公开(公告)号：US07521370B2
公开(公告)日：2009-04-21
申请号：US11508540
申请日：2006-08-23
申请人： Daniel J. Hoffman
发明人： Daniel J. Hoffman
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32935
摘要： A plasma reactor chamber is characterized by performing the following steps: (a) for each one of the chamber parameters, ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to the wafer support pedestal and computing from each sample of the RF electrical parameters the values of the plasma parameters, and storing the values with the corresponding levels of the one chamber parameter as corresponding chamber parameter data; (b) for each one of the chamber parameters, deducing, from the corresponding chamber parameter data, a single variable function for each of the plasma parameters having the one chamber parameter as an independent variable.
摘要翻译：等离子体反应室的特征在于执行以下步骤：（a）对于腔室参数中的每一个，斜坡化一个室参数的水平，同时以输入到晶片支撑基座的RF偏置功率采样RF电参数，并从 RF电参数的每个样本参数等离子体参数的值，并将具有一个室参数的相应电平的值存储为对应的室参数数据; （b）对于每个腔室参数，从相应的腔室参数数据推导出具有一个腔室参数作为独立变量的每个等离子体参数的单个可变函数。

5. 发明授权

US07494272B2 Dynamic surface annealing using addressable laser array with pyrometry feedback 有权
标题翻译：使用具有高温测量反馈的可寻址激光器阵列进行动态表面退火
公开(公告)号：US07494272B2
公开(公告)日：2009-02-24
申请号：US11469684
申请日：2006-09-01
申请人： Timothy N. Thomas , Dean Jennings , Bruce E. Adams , Abhilash J. Mayur
发明人： Timothy N. Thomas , Dean Jennings , Bruce E. Adams , Abhilash J. Mayur
IPC分类号： G01N3/28 , G01J5/08 , H01L21/477
CPC分类号： F27B17/0025 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/0665 , B23K26/0738 , H01L21/67115
摘要： Apparatus for dynamic surface annealing of a semiconductor wafer includes a source of laser radiation emitting at a laser wavelength and comprising an array of lasers arranged in rows and columns, the optical power of each the laser being individual adjustable and optics for focusing the radiation from the array of lasers into a narrow line beam in a workpiece plane corresponding to a workpiece surface, whereby the optics images respective columns of the laser array onto respective sections of the narrow line beam. A pyrometer sensor is provided that is sensitive to a pyrometer wavelength. An optical element in an optical path of the optics is tuned to divert radiation emanating from the workpiece plane to the pyrometry sensor. As a result, the optics images each of the respective section of the narrow line beam onto a corresponding portion of the pyrometer sensor. The apparatus further includes a controller responsive to the pyrometry sensor and coupled to adjust individual optical outputs of respective columns of the laser array in accordance with outputs of corresponding portions of the pyrometry sensor.
摘要翻译：用于半导体晶片的动态表面退火的装置包括以激光波长发射的激光辐射源，并且包括排列成行和列的激光阵列，每个激光器的光功率是单独调节的，并且用于将来自激光器阵列在对应于工件表面的工件平面中变成窄线束，由此光学器件将激光阵列的相应列映射到窄线束的相应部分上。提供对高温计波长敏感的高温计传感器。调整光学器件的光路中的光学元件以将从工件平面发出的辐射转移到高温测量传感器。结果，光学器件将窄线束的各个部分的每一个图像映射到高温计传感器的相应部分上。该装置还包括响应于高温测量传感器并耦合以根据高温测量传感器的对应部分的输出调节激光器阵列的各列的各个光学输出的控制器。

6. 发明授权

US07429532B2 Semiconductor substrate process using an optically writable carbon-containing mask 有权
标题翻译：使用可光学写入的含碳掩模的半导体衬底工艺
公开(公告)号：US07429532B2
公开(公告)日：2008-09-30
申请号：US11199592
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/302
CPC分类号： H01L21/0332 , G03F1/54 , G03F1/68 , G03F7/202 , H01L21/3081 , H01L21/3086
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.
摘要翻译：一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层（a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光具有与书写光不同的特征。

7. 发明授权

US07399943B2 Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece 有权
标题翻译：用于金属等离子体气相沉积和重新溅射的装置，其具有通过工件施加的源极和偏置功率频率
公开(公告)号：US07399943B2
公开(公告)日：2008-07-15
申请号：US11052011
申请日：2005-02-03
申请人： Karl M. Brown , John Pipitone , Vineet Mehta
发明人： Karl M. Brown , John Pipitone , Vineet Mehta
IPC分类号： B23K10/00
CPC分类号： H01J37/3405 , C23C14/046 , C23C14/352 , H01J37/32082
摘要： A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
摘要翻译：等离子体反应器包括真空室，该真空室包括侧壁，天花板和在室底部附近的晶片支撑基座，以及耦合到该室的真空泵。工艺气体入口连接到腔室和连接到工艺气体入口的工艺气体源。反应器还包括在天花板处的金属溅射靶，耦合到溅射靶的高压DC源，耦合到晶片支撑基座并具有适于激发动电子的频率的RF等离子体源功率发生器，以及RF等离子体偏置发电机耦合到晶片支撑基座并且具有适于将能量耦合到等离子体离子的频率。

8. 发明授权

US07335611B2 Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer 有权
标题翻译：铜导体退火工艺采用低温沉积光吸收层进行高速光学退火
公开(公告)号：US07335611B2
公开(公告)日：2008-02-26
申请号：US11199572
申请日：2005-08-08
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/4763 , H01L21/00
CPC分类号： B23K26/0738 , B23K26/0608 , B23K26/0876 , B23K26/361 , B23K26/40 , B23K2103/172 , B23K2103/50 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76886
摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.
摘要翻译：在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

9. 发明授权

US07312162B2 Low temperature plasma deposition process for carbon layer deposition 失效
标题翻译：用于碳层沉积的低温等离子体沉积工艺
公开(公告)号：US07312162B2
公开(公告)日：2007-12-25
申请号：US11131941
申请日：2005-05-17
申请人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
发明人： Kartik Ramaswamy , Hiroji Hanawa , Biagio Gallo , Kenneth S. Collins , Kai Ma , Vijay Parihar , Dean Jennings , Abhilash J. Mayur , Amir Al-Bayati , Andrew Nguyen
IPC分类号： H01L21/31
CPC分类号： C23C16/26 , C23C16/505 , C23C16/52 , H01L21/268 , H01L21/3146
摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.
摘要翻译：在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳工艺气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

10. 发明授权

US07291545B2 Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage 有权
标题翻译：使用具有低解离和低最小等离子体电压的电容耦合等离子体源的等离子体浸没离子注入工艺
公开(公告)号：US07291545B2
公开(公告)日：2007-11-06
申请号：US11284975
申请日：2005-11-21
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Antonio Monroy
IPC分类号： H01L21/04
CPC分类号： H01J37/32357 , H01J37/32082 , H01J37/321 , H01J37/32412 , H01L21/2236
摘要： A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.
摘要翻译：将工件中的物质离子注入到选定的离子注入轮廓深度的方法包括将具有半导体材料的工件放置在等离子体反应器室的处理区域中或其附近的静电卡盘上，并向静电卡盘施加夹持电压。所述方法还包括将包括要离子植入的物质的前体气体引入所述室中并将RF偏压施加到所述静电卡盘，所述RF偏压具有对应于所述离子注入轮廓深度的偏置电平。

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