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1. 发明授权

US10421151B2 Laser noise elimination in transmission thermometry 有权
公开(公告)号：US10421151B2
公开(公告)日：2019-09-24
申请号：US13789982
申请日：2013-03-08
申请人： Jiping Li , Aaron Muir Hunter , Thomas Haw
发明人： Jiping Li , Aaron Muir Hunter , Thomas Haw
IPC分类号： B23K26/00 , G01N21/59 , G01J5/02 , G01J5/08 , G01J1/04 , G01J5/00 , G01J5/06 , G01J5/58
摘要： Apparatus and methods for measuring the temperature of a substrate are disclosed. The apparatus includes a source of temperature-indicating radiation, a detector for the temperature-indicating radiation, and a decorrelator disposed in an optical path between the source of temperature-indicating radiation and the detector for the temperature-indicating radiation. The decorrelator may be a broadband amplifier and/or a mode scrambler. A broadband amplifier may be a broadband laser, Bragg grating, a fiber Bragg grating, a Raman amplifier, a Brillouin amplifier, or combinations thereof. The decorrelator is selected to emit radiation that is transmitted, at least in part, by the substrate being monitored. The source is matched to the decorrelator such that the emission spectrum of the source is within the gain bandwidth of the decorrelator, if the decorrelator is a gain-driven device.

2. 发明授权

US08979087B2 Substrate supporting edge ring with coating for improved soak performance 有权
公开(公告)号：US08979087B2
公开(公告)日：2015-03-17
申请号：US13486807
申请日：2012-06-01
申请人： Joseph M. Ranish , Aaron Muir Hunter
发明人： Joseph M. Ranish , Aaron Muir Hunter
IPC分类号： B23Q3/00 , H01L21/687 , H01L21/67
CPC分类号： H01L21/68757 , H01L21/67115 , H01L21/68735 , Y10S269/909
摘要： Embodiments of the present invention provide a substrate supporting edge ring for supporting a substrate. In one embodiment, a substrate support ring is provided. The substrate support ring comprises an annular body. The annular body comprises an outer band extending radially inward from an outer annular sidewall; and a substrate supporting region extending inward from an inner portion of the outer band, wherein the annular body comprises a first material that is exposed and at least a portion of the substrate supporting region is covered with a coating comprising a second material that is different than the first material.

3. 发明授权

US08939760B2 Spike anneal residence time reduction in rapid thermal processing chambers 有权
标题翻译：快速热处理室中尖峰退火停留时间的减少
公开(公告)号：US08939760B2
公开(公告)日：2015-01-27
申请号：US13370164
申请日：2012-02-09
申请人： Jiping Li , Blake Koelmel , Aaron Muir Hunter , Wolfgang R. Aderhold
发明人： Jiping Li , Blake Koelmel , Aaron Muir Hunter , Wolfgang R. Aderhold
IPC分类号： F27D15/02
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/67115
摘要： The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.
摘要翻译：本发明一般涉及在快速热处理期间冷却衬底的方法。所述方法通常包括将基底定位在腔室中并向基底施加热量。在将衬底的温度升高到所需温度之后，快速冷却衬底。通过增加通过室的气体的流速来促进衬底的快速冷却。通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。冷却板通过由位于其间的气体促进的传导从衬底去除热量。可以调节冷却板和基板之间的距离以在它们之间产生湍流气流，这进一步有助于从基板去除热量。在衬底充分冷却之后，将衬底从腔室中取出。

4. 发明授权

US08724977B2 System for non radial temperature control for rotating substrates 有权
标题翻译：用于旋转基板的非径向温度控制系统
公开(公告)号：US08724977B2
公开(公告)日：2014-05-13
申请号：US13548858
申请日：2012-07-13
申请人： Wolfgang R. Aderhold , Aaron Muir Hunter , Joseph M. Ranish
发明人： Wolfgang R. Aderhold , Aaron Muir Hunter , Joseph M. Ranish
IPC分类号： A21B2/00
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H01L22/10
摘要： Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.
摘要翻译：本发明的实施例提供了用于降低热处理期间的不均匀性的装置和方法。一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件被配置为使衬底旋转;传感器组件，被配置为测量衬底的温度多个位置，以及一个或多个脉冲加热元件，其配置成向处理体积提供脉冲能量。

5. 发明申请

US20130163091A1 MULTIPLE BEAM COMBINER FOR LASER PROCESSING APPARATUS 有权
公开(公告)号：US20130163091A1
公开(公告)日：2013-06-27
申请号：US13715804
申请日：2012-12-14
申请人： STEPHEN MOFFATT , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
发明人： STEPHEN MOFFATT , Douglas E. Holmgren , Samuel C. Howells , Edric Tong , Bruce E. Adams , Jiping Li , Aaron Muir Hunter
IPC分类号： G02B27/10 , G02B27/14 , G02B27/12
CPC分类号： G02B27/106 , G02B17/0888 , G02B27/0025 , G02B27/10 , G02B27/1006 , G02B27/12 , G02B27/123 , G02B27/126 , G02B27/14 , G02B27/143 , G02B27/30
摘要： Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

6. 发明申请

US20130055731A1 CRYSTALLIZATION METHODS 有权
标题翻译：结晶方法
公开(公告)号：US20130055731A1
公开(公告)日：2013-03-07
申请号：US13601069
申请日：2012-08-31
申请人： Bruce E. Adams , Aaron Muir Hunter , Stephen Moffatt
发明人： Bruce E. Adams , Aaron Muir Hunter , Stephen Moffatt
IPC分类号： F25D31/00
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。

7. 发明申请

US20130029499A1 METHODS OF THERMALLY PROCESSING A SUBSTRATE 审中-公开
标题翻译：热处理基板的方法
公开(公告)号：US20130029499A1
公开(公告)日：2013-01-31
申请号：US13553224
申请日：2012-07-19
申请人： Aaron Muir Hunter
发明人： Aaron Muir Hunter
IPC分类号： H01L21/26
CPC分类号： H01L21/2636 , H01L21/02686 , H01L21/02691 , H01L21/268
摘要： The present invention generally relates to methods for thermally processing substrates. In one embodiment, a substrate having an amorphous thin film thereon is subjected to a first pulse of electromagnetic energy having a first fluence insufficient to complete thermal processing. After a predetermined amount of time, the substrate is then subjected to a second pulse of electromagnetic energy having a second fluence greater than the first fluence. The second fluence is generally sufficient to complete the thermal processing. Exposing the substrate to the lower fluence first pulse before the second pulse reduces damage to a thin film disposed on the substrate. In another embodiment, a substrate is exposed to a plurality of electromagnetic energy pulses. The plurality of electromagnetic energy pulses are spaced at increasing intervals to reduce the rate of recrystallization of a film on the substrate, thus increasing the size of the crystals formed during the recrystallization.
摘要翻译：本发明一般涉及用于热处理衬底的方法。在一个实施例中，其上具有非晶薄膜的基板经受第一能量密度不足以完成热处理的电磁能的第一脉冲。在预定量的时间之后，然后使衬底经受具有大于第一注量的第二注量的第二电磁能脉冲。第二个通量通常足以完成热处理。在第二脉冲之前将衬底暴露于较低能量密度的第一脉冲减少对设置在衬底上的薄膜的损伤。在另一个实施例中，衬底暴露于多个电磁能量脉冲。多个电磁能脉冲以增加的间隔隔开以降低衬底上的膜的再结晶速率，从而增加在重结晶期间形成的晶体的尺寸。

8. 发明申请

US20120145684A1 METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE 有权
标题翻译：在基材上形成的热处理结构的方法
公开(公告)号：US20120145684A1
公开(公告)日：2012-06-14
申请号：US13401526
申请日：2012-02-21
申请人： Paul Carey , Aaron Muir Hunter , Dean Jennings , Abhilash J. Mayur , Stephen Moffatt , William Schaffer , Timothy N. Thomas , Mark Yam
发明人： Paul Carey , Aaron Muir Hunter , Dean Jennings , Abhilash J. Mayur , Stephen Moffatt , William Schaffer , Timothy N. Thomas , Mark Yam
IPC分类号： B23K26/00 , B23K26/10 , F27D11/12
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/67115 , H01L21/823418 , H01L29/0653 , H01L29/6659 , H01L29/66659
摘要： Methods used to perform an annealing process on desired regions of a substrate are disclosed. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
摘要翻译：公开了用于对基板的期望区域进行退火处理的方法。在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂基底的区域和/或激活基底的各个区域。由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

9. 发明申请

US20070212859A1 METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE 审中-公开
标题翻译：在基材上形成的热处理结构的方法
公开(公告)号：US20070212859A1
公开(公告)日：2007-09-13
申请号：US11459856
申请日：2006-07-25
申请人： Paul CAREY , Aaron Muir Hunter , Dean Jennings , Abhilash J. Mayur , Stephen Moffatt , William Schaffer , Timothy N. Thomas , Mark Yam
发明人： Paul CAREY , Aaron Muir Hunter , Dean Jennings , Abhilash J. Mayur , Stephen Moffatt , William Schaffer , Timothy N. Thomas , Mark Yam
IPC分类号： H01L21/268
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/67115 , H01L21/823418 , H01L29/0653 , H01L29/6659 , H01L29/66659
摘要： The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
摘要翻译：本发明总体上描述了一种更多的用于对基材的期望区域进行退火处理的方法。在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤（例如，从注入工艺引起的晶体损伤）所产生的不必要的损坏，更均匀地分布各种掺杂剂基底的区域和/或激活基底的各个区域。由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

10. 发明授权

US09557111B2 Ambient laminar gas flow distribution in laser processing systems 有权
标题翻译：激光加工系统环境层流气流分布
公开(公告)号：US09557111B2
公开(公告)日：2017-01-31
申请号：US13204068
申请日：2011-08-05
申请人： Stephen Moffatt , Aaron Muir Hunter
发明人： Stephen Moffatt , Aaron Muir Hunter
IPC分类号： F27D5/00
CPC分类号： F27D21/00 , F27D5/0037 , F27D2021/0078 , H01L21/67115
摘要： A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a gas outlet portal, each in fluid communication with a gas inlet plenum and gas outlet plenum, respectively. A connection member is disposed around the central opening and holds the window over the central opening. Connection openings in the connection member are in fluid communication with the gas inlet plenum and gas outlet plenum, respectively, through a gas inlet conduit and a gas outlet conduit formed through the connection member.
摘要翻译：公开了半导体衬底退火的方法和装置。该装置具有退火能量源和衬底支撑件，其中屏蔽构件设置在退火能量源和衬底支撑件之间。屏蔽构件是具有大于在基板支撑件上处理的基板的尺寸的基本上平坦的构件，窗口覆盖基本平坦的构件中的中心开口。中心开口具有气体入口入口和气体出口入口，每个入口入口和气体出口通道分别与气体入口气室和气体出口增压室流体连通。连接构件设置在中心开口周围并将窗口保持在中心开口的上方。连接构件中的连接开口分别通过气体入口导管和通过连接构件形成的气体出口导管与气体入口气室和气体出口增压室流体连通。

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