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1. 发明授权

US09966254B2 Method and apparatus for heat-treating high dielectric constant film 有权
公开(公告)号：US09966254B2
公开(公告)日：2018-05-08
申请号：US15798743
申请日：2017-10-31
申请人： SCREEN Holdings Co., Ltd.
发明人： Hikaru Kawarazaki
IPC分类号： H01L21/02
CPC分类号： H01L21/02345 , F27B17/0025 , F27D11/00 , H01L21/02247 , H01L21/02255 , H01L21/02329
摘要： A substrate in which a high-dielectric-constant gate insulator is formed on a silicon substrate with an interface layer film sandwiched in between is housed in a chamber. The method of the invention including: (a) housing the substrate in a chamber; (b) supplying ammonia to the chamber to foam an ammonia atmosphere; and (c) applying flash light to a surface of the substrate housed in the chamber to heat the high dielectric constant film, wherein the flash light applied in said step (c) has a spectral distribution that has a peak in a wavelength range of 200 to 300 nm.

2. 发明授权

US09845991B2 Heat treatment apparatus 有权
公开(公告)号：US09845991B2
公开(公告)日：2017-12-19
申请号：US14067318
申请日：2013-10-30
申请人： TOKYO ELECTRON LIMITED
发明人： Hirofumi Kaneko
IPC分类号： F27B17/00 , H01L21/67
CPC分类号： F27B17/0025 , H01L21/67109 , H01L21/67126
摘要： Provided is a heat treatment apparatus, which includes: a cylindrical quartz reaction tube having a furnace opening and a bottom flange at a lower portion thereof; a flange holding part configured to hold the bottom flange of the reaction tube; and a lid including a metal lid and a quartz lid supported by the metal lid, the quartz lid being configured to close the furnace opening of the reaction tube. The quartz lid is fixed onto the metal lid by a support ring. The support ring is brought into contact with a bottom surface of the flange holding part so that a gap is defined between the quartz lid and the bottom flange. A sealing member is arranged outward from the gap in a radial direction.

3. 发明授权

US09644268B2 Thermal bridge for chemical vapor deposition reactors 有权
公开(公告)号：US09644268B2
公开(公告)日：2017-05-09
申请号：US13222984
申请日：2011-08-31
申请人： Gregg Higashi , Khurshed Sorabji , Andreas Hegedus
发明人： Gregg Higashi , Khurshed Sorabji , Andreas Hegedus
IPC分类号： C23C16/46 , F27D11/12 , C23C16/458 , C23C16/48 , C23C16/54 , F27B17/00 , F27D11/06 , H01L21/67 , H01L21/677
CPC分类号： C23C16/458 , C23C16/483 , C23C16/54 , F27B17/0025 , F27D11/06 , F27D11/12 , H01L21/67115 , H01L21/67173 , H01L21/67706 , H01L21/6776
摘要： A thermal bridge connecting first and second processing zones and a method for transferring a work piece from a first to a second processing zone by way of the thermal bridge are disclosed. A work piece, transportable from the first to the second processing zone on or above the thermal bridge, is maintained at a temperature between the temperatures of the processing zones. The thermal bridge member features a thermally conductive transport member for the work piece supported over an infrared transmissive member that is insulative to heat conduction and convection. The bridge insulative member extends between the first and second processing zones or between reactors. An infrared radiation beam source emits infrared radiation which passes through the bridge insulative member to the transport member, heating the member. In an alternate embodiment, the transport member may be heated directly. A liner member may be mounted above the bridge member to retain heat.

4. 发明申请

US20170098543A1 METHOD AND APPARATUS FOR HEAT-TREATING HIGH DIELECTRIC CONSTANT FILM 有权
公开(公告)号：US20170098543A1
公开(公告)日：2017-04-06
申请号：US15380000
申请日：2016-12-15
申请人： SCREEN Holdings Co., Ltd.
发明人： Hikaru KAWARAZAKI
IPC分类号： H01L21/02
CPC分类号： H01L21/02345 , F27B17/0025 , F27D11/00 , H01L21/02247 , H01L21/02255 , H01L21/02329
摘要： A substrate in which a high-dielectric-constant gate insulator is formed on a silicon substrate with an interface layer film sandwiched in between is housed in a chamber. The method of the invention including: (a) housing the substrate in a chamber; (b) supplying ammonia to the chamber to foam an ammonia atmosphere; and (c) applying flash light to a surface of the substrate housed in the chamber to heat the high dielectric constant film, wherein the flash light applied in said step (c) has a spectral distribution that has a peak in a wavelength range of 200 to 300 nm.

5. 发明授权

US09587884B2 Insulation structure and method of manufacturing semiconductor device 有权
标题翻译：半导体器件绝缘结构及其制造方法
公开(公告)号：US09587884B2
公开(公告)日：2017-03-07
申请号：US14223367
申请日：2014-03-24
申请人： Hitachi Kokusai Electric Inc.
发明人： Tetsuya Kosugi , Motoya Takewaki , Hitoshi Murata , Masaaki Ueno
IPC分类号： F27D9/00 , F27B17/00
CPC分类号： F27D9/00 , F27B17/0025
摘要： A heat insulation structure, which has a cylindrical side wall part formed in a multilayer structure, includes: a cooling gas supply port provided in an upper portion of a side wall outer layer disposed in an outer side of the side wall part; a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer; a space provided in an inner side of the side wall inner layer; a plurality of blowout holes provided in the side wall inner layer for distributing cooling gas from the cooling gas passage to the space; a buffer area continuously provided in the cooling gas supply port and the cooling gas passage; and a throttle part configured to reduce a cross-sectional area of a boundary surface between the buffer area and the cooling gas passage.
摘要翻译：具有形成为多层结构的圆筒状侧壁部的隔热结构体具有：设置在所述侧壁部的外侧的侧壁外层的上部的冷却气体供给口，设置在设置在所述侧壁部的内侧的侧壁内层与所述侧壁外层之间的冷却气体通路; 设置在所述侧壁内层的内侧的空间; 设置在所述侧壁内层中的用于将冷却气体从所述冷却气体通道分配到所述空间的多个排出孔; 连续地设置在冷却气体供给口和冷却气体通路中的缓冲区域; 以及节流部，其构造成减小所述缓冲区域和所述冷却气体通路之间的边界面的截面积。

6. 发明申请

US20170011932A1 HIGH-PRESSURE ANNEAL 有权
标题翻译：高压耳鼻喉
公开(公告)号：US20170011932A1
公开(公告)日：2017-01-12
申请号：US14791784
申请日：2015-07-06
申请人： GLOBALFOUNDRIES Inc.
发明人： Wieland Pethe , Dirk Noack , Bernd Kallauch
IPC分类号： H01L21/324 , F27B17/00 , H01L21/67 , H01L21/28 , H01L29/66
CPC分类号： H01L21/324 , F27B17/0025 , H01L21/28176 , H01L21/28185 , H01L21/67098 , H01L21/6719 , H01L29/66568
摘要： A method of treating a semiconductor device is provided including the steps of loading the semiconductor device in a processing chamber, pressurizing the processing chamber by supplying a processing gas from a pressure chamber to the processing chamber, performing a thermal anneal of the semiconductor device in the processing chamber, and depressurizing the processing chamber by supplying the processing gas from the processing chamber to the pressure chamber.
摘要翻译：提供了一种处理半导体器件的方法，包括以下步骤：将半导体器件装载在处理室中，通过将处理气体从压力室提供给处理室来对处理室加压，在半导体器件的热退火并且通过将处理气体从处理室供给到压力室来对处理室进行减压。

7. 发明授权

US09482468B2 Repeatable heat-treating methods and apparatus 有权
标题翻译：可重复的热处理方法和装置
公开(公告)号：US09482468B2
公开(公告)日：2016-11-01
申请号：US11521074
申请日：2006-09-14
申请人： David Malcolm Camm , Sergiy Dets , Kevin McDonnell , Greg Stuart , Tilman Thrum , Igor Rudic , Ljubomir Kaludjercic
发明人： David Malcolm Camm , Sergiy Dets , Kevin McDonnell , Greg Stuart , Tilman Thrum , Igor Rudic , Ljubomir Kaludjercic
IPC分类号： G01J5/00 , G01J5/58 , F27B17/00 , H01L21/67 , H01L21/66
CPC分类号： F27B17/0025 , H01L21/67115 , H01L21/67248 , H01L22/20
摘要： A first heat-treating method involves monitoring at least one thermal efficiency parameter associated with an irradiance system configured to produce an irradiance flash incident on a surface of a workpiece, and automatically updating control information used by the irradiance system to produce the irradiance flash, in response to the monitoring of the thermal efficiency parameter. A second method involves predicting a heating effect of an irradiance flash to be incident upon a surface of a workpiece, in response to a measurement of a heating parameter of the surface, and pre-adjusting the irradiance flash, in response to the predicted heating effect. A third method involves measuring a temperature of a surface of a workpiece during an initial portion of an irradiance flash incident on the surface, and controlling a power of a remaining portion of the irradiance flash, in response to the temperature.
摘要翻译：第一热处理方法包括监测与被配置为产生入射在工件表面上的辐照闪光相关联的辐射系统的至少一个热效率参数，并且自动更新由辐照系统使用的控制信息以产生辐照闪光，响应于热效率参数的监测。第二种方法包括响应于表面的加热参数的测量以及响应于预测的加热效应来预先调节辐照度闪光来预测辐射闪光的加热效应入射到工件的表面上。第三种方法包括测量在入射到表面上的辐照闪光的初始部分期间工件表面的温度，以及响应于温度来控制辐照闪光的剩余部分的功率。

8. 发明申请

US20160314988A1 SUBSTRATE HEAT TREATMENT APPARATUS AND METHOD 审中-公开
标题翻译：基板热处理装置和方法
公开(公告)号：US20160314988A1
公开(公告)日：2016-10-27
申请号：US15203524
申请日：2016-07-06
申请人： SAMSUNG DISPLAY CO., LTD , TERASEMICON CORPORATION
发明人： Sung Guk An , Jun Heo , Jong Hyun Yun , Kyoung Wan Park , Ho Young Kang , Byung Il Lee
IPC分类号： H01L21/324 , F27B17/00 , H01L21/67
CPC分类号： H01L21/324 , F27B17/0025 , H01L21/67109 , H01L21/67115
摘要： Substrate heat treatment apparatus and method are provided. According to an embodiment of the present invention, there is provided a substrate heat treatment apparatus including an inner shell configured to form a substrate housing space to house at least one substrate, an outer shell configured to cover the inner shell, and having at least one gas hole, and at least one heater configured to heat the substrate, wherein the at least one gas hole is configured to allow a first gas to be injected into a space between the inner shell and the outer shell.
摘要翻译：提供基板热处理装置和方法。根据本发明的实施例，提供了一种基板热处理设备，其包括：内壳，其构造成形成用于容纳至少一个基板的基板容纳空间;外壳，构造成覆盖所述内壳，并且具有至少一个气体孔和至少一个加热构造成加热基底的加热器，其中所述至少一个气孔被配置为允许第一气体被注入到所述内壳和所述外壳之间的空间中。

9. 发明申请

US20160273836A1 CLAMP APPARATUS, SUBSTRATE CARRY-IN/OUT APPARATUS USING THE SAME, AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：夹具装置，使用其的基板搬入装置和基板处理装置
公开(公告)号：US20160273836A1
公开(公告)日：2016-09-22
申请号：US15070123
申请日：2016-03-15
申请人： Tokyo Electron Limited
发明人： Mitsuru Obara , Hisashi Inoue , Keishi Shionaga , Masahiro Kobayashi , Norio Baba , Hiroshi Kikuchi
IPC分类号： F27B5/04 , F16B2/02 , H01L21/67 , H01L21/673 , H01L21/677
CPC分类号： F27B5/04 , F16B2/02 , F27B17/0016 , F27B17/0025 , F27D3/0084 , F27D2003/0012 , F27D2003/0046 , H01L21/67109 , H01L21/67379 , H01L21/67389 , H01L21/6773 , H01L21/67742 , H01L21/67772 , H01L21/67775
摘要： The clamp apparatus of the present disclosure includes a clamp member configured to contact a substrate accommodating container from an upper side and fix the substrate accommodating container to a predetermined position when a cover provided on a front surface of the substrate accommodating container is opened/closed, a driving mechanism configured to drive the clamp member; a casing configured to cover the driving mechanism, a suction port configured to communicate with the casing, an exhaust chamber provided near the casing, and a fan provided inside the exhaust chamber.
摘要翻译：本公开的夹紧装置包括夹持构件，其构造成当设置在基板容纳容器的前表面上的盖被打开/关闭时，从上侧接触基板容纳容器并将基板容纳容器固定到预定位置，构造成驱动所述夹紧构件的驱动机构; 被构造成覆盖驱动机构的壳体，构造成与壳体连通的吸入口，设置在壳体附近的排气室和设置在排气室内的风扇。

10. 发明申请

US20160039163A1 HOT ISOSTATIC PRESSING DEVICE 有权
标题翻译：热静压机
公开(公告)号：US20160039163A1
公开(公告)日：2016-02-11
申请号：US14782949
申请日：2014-05-02
申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
发明人： Tomomitsu NAKAI , Katsumi WATANABE , Makoto YONEDA
IPC分类号： B30B11/00 , B28B3/00
CPC分类号： B30B11/002 , B22F3/15 , B22F2003/153 , B22F2203/11 , B28B3/006 , F27B5/04 , F27B5/06 , F27B5/16 , F27B17/0025 , F27D7/02 , F27D7/04 , F27D7/06 , F27D9/00 , H01L21/67109
摘要： Provided is a hot isostatic pressing (HIP) device (1) that can efficiently cool a hot zone during HIP processing while restraining temperatures in the lower part of a high-pressure container. This HIP device (1) is provided with the following: gas-impermeable casings (3, 4) that surround an object to be processed (W); a heating unit (7) that is disposed inside these casings and forms a hot zone around the object to be processed (W); a high-pressure container (2); and a cooling unit that guides a pressure-medium gas cooled on the outside of the casings into the hot zone to cool the hot zone. The cooling unit comprises the following: a gas introduction unit that introduces the pressure-medium gas that has been cooled on the outside of the casings (3, 4) into the hot zone; and a cooling promotion unit (37) that cools the pressure medium gas by causing the pressure-medium gas that has been cooled on the outside of the casings to exchange heat with a base (11) of the high-pressure container (2).
摘要翻译：提供了一种热等静压（HIP）装置（1），其能够在HIP处理期间有效地冷却热区，同时抑制高压容器的下部的温度。该HIP装置（1）具有以下装置：围绕待加工物体（W）的气体不可渗透的壳体（3,4）; 加热单元（7），其设置在这些壳体的内部并在待处理物体（W）周围形成热区域; 高压容器（2）; 以及冷却单元，其将在壳体外部冷却的压力介质气体引导到热区域中以冷却热区域。冷却单元包括：将已经冷却到壳体（3）的外部的压力介质气体引入热区的气体引入单元; 以及冷却促进单元，其通过使已经在壳体外部被冷却的压力介质气体与高压容器（2）的基座（11）进行热交换来对压力介质气体进行冷却。

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