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    • 4. 发明授权
    • Photonic crystal surface emitting laser and method of manufacturing the same
    • 光子晶体发射激光器及其制造方法
    • US08699539B2
    • 2014-04-15
    • US13482025
    • 2012-05-29
    • Aihiko Numata
    • Aihiko Numata
    • H01S5/183
    • H01S5/105B82Y20/00H01S5/187H01S5/2009H01S5/3063H01S5/34333H01S2304/04
    • A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.
    • 一种光子晶体表面发射激光器,具有形成在衬底上的n型覆层; 形成在n型包层上的有源层; 形成在有源层上并由第二p型半导体制成的电子阻挡层; 并且形成在电子阻挡层上的二维光子晶体层包括由第一p型半导体制成并具有不同带隙的多个层,并且具有高折射率部分和低折射率部分 在平面方向。 多个层的带隙小于第二p型半导体的带隙,并且在多层的层叠方向上逐步或连续地减少。 具有比第二p型半导体的受体掺杂浓度小的第三p型半导体被设置为覆盖电子阻挡层的表面。
    • 6. 发明申请
    • PHOTONIC CRYSTAL SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME
    • 光电晶体表面发射激光器及其制造方法
    • US20120327966A1
    • 2012-12-27
    • US13482025
    • 2012-05-29
    • Aihiko Numata
    • Aihiko Numata
    • H01S5/00H01L21/00
    • H01S5/105B82Y20/00H01S5/187H01S5/2009H01S5/3063H01S5/34333H01S2304/04
    • A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.
    • 一种光子晶体表面发射激光器,具有形成在衬底上的n型覆层; 形成在n型包层上的有源层; 形成在有源层上并由第二p型半导体制成的电子阻挡层; 并且形成在电子阻挡层上的二维光子晶体层包括由第一p型半导体制成并具有不同带隙的多个层,并且具有高折射率部分和低折射率部分 在平面方向。 多个层的带隙小于第二p型半导体的带隙,并且在多层的层叠方向上逐步或连续地减少。 具有比第二p型半导体的受体掺杂浓度小的第三p型半导体被设置为覆盖电子阻挡层的表面。
    • 7. 发明申请
    • WAVEGUIDE AND DEVICE INCLUDING THE SAME
    • 波导和装置包括它们
    • US20070110382A1
    • 2007-05-17
    • US11558563
    • 2006-11-10
    • Kiyokatsu IkemotoAkinari TakagiHikaru HoshiKazuya NobayashiAihiko Numata
    • Kiyokatsu IkemotoAkinari TakagiHikaru HoshiKazuya NobayashiAihiko Numata
    • G02B6/10
    • G02B6/1225B82Y20/00
    • At least one exemplary embodiment is directed to a waveguide, which includes a three-dimensional photonic crystal including a first linear defect and a second linear defect. The first linear defect is disposed at part of columnar structures and is formed of a medium different from the columnar structures. The second linear defect is disposed at part of columnar structures extending in the longitudinal direction of the first linear defect and is formed of a medium having a refractive index different from that of the medium used for the columnar structures. The second linear defect is separated from the first linear defect by a distance of at least 0.5 times the out-of-plane lattice period of the three-dimensional photonic crystal in a direction in which layers including the columnar structures are stacked.
    • 至少一个示例性实施例涉及一种波导,其包括包括第一线性缺陷和第二线性缺陷的三维光子晶体。 第一线性缺陷设置在柱状结构的一部分,并且由不同于柱状结构的介质形成。 第二线性缺陷设置在沿着第一线性缺陷的纵向方向延伸的柱状结构的一部分处,并且由具有与用于柱状结构的介质的折射率不同的介质形成。 将第二线性缺陷与包含柱状结构的层的层叠方向上的三维光子晶体的面外晶格周期的至少0.5倍的距离与第一线性缺陷分开。
    • 8. 发明授权
    • Solid state image sensor with protection against certain incident light
    • 固态图像传感器,防止某些入射光
    • US09040888B2
    • 2015-05-26
    • US13297901
    • 2011-11-16
    • Aihiko Numata
    • Aihiko Numata
    • H01L27/146
    • H01L27/14621
    • A solid state image sensor includes a plurality of pixels, each having a photoelectric conversion section formed in the inside of a substrate and a light-receiving section formed on the side of a light-receiving surface of the substrate. At least a part of the plurality of pixels is ranging pixels. The light-receiving section of each of the ranging pixels is equipped with a guided mode resonant filter adapted to reflect incident light getting into the inside of the light-receiving section at a specific incident angle. The normal line of the guided mode resonant filter is inclined relative to the principal ray of the flux of light entering the guided mode resonant filter.
    • 固态图像传感器包括多个像素,每个像素具有形成在基板内部的光电转换部分和形成在基板的光接收表面侧的光接收部分。 多个像素中的至少一部分是测距像素。 每个测距像素的光接收部分配备有引导模式谐振滤波器,其适于反射以特定入射角进入光接收部分内部的入射光。 导模谐振滤波器的法线相对于进入导模谐振滤波器的光通量的主光线倾斜。