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    • 3. 发明授权
    • Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device
    • 金刚石电子发射阴极,电子发射源,电子显微镜和电子束曝光装置
    • US07737614B2
    • 2010-06-15
    • US11665459
    • 2006-06-19
    • Akihiko UedaYoshiyuki YamamotoYoshiki NishibayashiTakahiro Imai
    • Akihiko UedaYoshiyuki YamamotoYoshiki NishibayashiTakahiro Imai
    • H01J1/02H01J19/06
    • H01J1/15H01J1/14H01J37/06H01J2237/06308H01J2237/06316
    • An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2×1015 cm3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2×1015 cm−3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.
    • 目的是提供使用金刚石的电子发射阴极和电子发射源,其具有适用于电子射线和电子束装置和真空管,特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度 ,以及使用这种阴极和源的电子设备。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石,金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分,在锐化部分中设置有一个电子发射部分 并且由电性能不同的至少两种类型的半导体构成。 构成半导体的种类之一是含有2×1015cm3以上的n型杂质的n型半导体,另一种是含有2×10 15 cm -3以上的p型杂质的p型半导体, p型半导体和n型半导体结合在一起,加热部分被平行于接合面激励并被一对电流引入端直接加热,并且一些引入的电子从电子发射部分发射。
    • 6. 发明申请
    • MICROWAVE PLASMA CVD DEVICE
    • 微波等离子体CVD装置
    • US20090120366A1
    • 2009-05-14
    • US12294212
    • 2007-01-29
    • Akihiko UedaKiichi MeguroYoshiyuki YamamotoYoshiki NishibayashiTakahiro Imai
    • Akihiko UedaKiichi MeguroYoshiyuki YamamotoYoshiki NishibayashiTakahiro Imai
    • C23C16/54
    • C30B25/105C23C16/24C23C16/511C30B29/04H01J37/32192H01J37/32238
    • The present invention provides a microwave plasma CVD device that can satisfactorily perform plasma position control under a condition capable of fabricating a large-area high-quality diamond thin film or the like. A microwave plasma CVD device includes: a vacuum chamber 1 having, in the center of its upper portion, an open portion 2 for introducing microwaves 20; a base material support table 11 for supporting a base material inside the vacuum chamber; a waveguide for guiding the microwaves to the open portion; a dielectric window 22 for introducing the microwaves to the inside of the vacuum chamber; and an antenna portion 25 for introducing the microwaves to the vacuum chamber, the antenna portion being configured by a round rod portion 23 that is positioned in the center of the waveguide, the open portion and the dielectric window and an electrode portion 24 that holds the dielectric window between the electrode portion and the upper portion of the vacuum chamber for vacuum retention, wherein an end surface of the electrode portion 24 is formed wider than the dielectric window such that the dielectric window is hidden, and a concave portion of a predetermined size is formed in the surface of the electrode portion 24 that faces the center of the vacuum chamber.
    • 本发明提供一种能够在能够制造大面积高品质金刚石薄膜等的条件下令人满意地进行等离子体位置控制的微波等离子体CVD装置。 微波等离子体CVD装置包括:真空室1,其上部中心具有用于引入微波20的开口部分2; 用于在真空室内支撑基材的基材支撑台11; 用于将微波引导到开口部分的波导; 用于将微波引导到真空室的内部的电介质窗22; 以及用于将微波引入真空室的天线部分25,天线部分由位于波导中心的圆棒部分23,开口部分和电介质窗口构成,电极部分24保持 电极部分和真空室上部之间的电介质窗口用于真空保持,其中电极部分24的端面形成为比电介质窗口宽,使得电介质窗口被隐藏,并且具有预定尺寸的凹部 形成在电极部分24的面对真空室的中心的表面上。
    • 8. 发明申请
    • Diamond Electron Emission Cathode, Electron Emission Source, Electron Microscope, and Electron Beam Exposure Device
    • 金刚石电子发射阴极,电子发射源,电子显微镜和电子束曝光装置
    • US20080048544A1
    • 2008-02-28
    • US11665459
    • 2006-06-19
    • Akihiko UedaYoshiyuki YamamotoYoshiki NishibayashiTakahiro Imai
    • Akihiko UedaYoshiyuki YamamotoYoshiki NishibayashiTakahiro Imai
    • H01J1/15
    • H01J1/15H01J1/14H01J37/06H01J2237/06308H01J2237/06316
    • An object is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. A diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof, the diamond electron emission cathode having a columnar shape formed by a sharpened acute section and a heating section, being provided with one electron emitting portion in the sharpened acute section, and being constituted of at least two types of semiconductors that differ in electric properties. One of the types constituting the semiconductors is an n-type semiconductor containing n-type impurities at 2×1015 cm3 or higher, the other one is a p-type semiconductor containing p-type impurities at 2×1015 cm-3 or higher, the p-type semiconductor and the n-type semiconductor are joined together, the heating section is energized parallel to the junction surface and directly heated by a pair of current introducing terminals, and some of the introduced electrons are emitted from the electron emitting portion.
    • 目的是提供使用金刚石的电子发射阴极和电子发射源,其具有适用于电子射线和电子束装置和真空管,特别是电子显微镜和电子束曝光装置的高亮度和小的能量宽度 ,以及使用这种阴极和源的电子设备。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石,金刚石电子发射阴极具有由锐化尖锐部分形成的柱状形状和加热部分,在锐化部分中设置有一个电子发射部分 并且由电性能不同的至少两种类型的半导体构成。 构成半导体的类型之一是在2×10 15 cm 3以上含有n型杂质的n型半导体,另一种是含有 在2×10 15 cm -3以上的p型杂质,p型半导体和n型半导体结合在一起,加热部分被平行于 并且由一对电流引入端子直接加热,并且一部分引入的电子从电子发射部分发射。