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1. 发明授权

US08577494B2 Semiconductor manufacturing apparatus and control system and control method therefor 失效
标题翻译：半导体制造装置及其控制系统及其控制方法
公开(公告)号：US08577494B2
公开(公告)日：2013-11-05
申请号：US13020692
申请日：2011-02-03
申请人： Kazuhiro Miwa , Kazuhiro Watanabe , Akito Mifune
发明人： Kazuhiro Miwa , Kazuhiro Watanabe , Akito Mifune
IPC分类号： G06F19/00
CPC分类号： G05B13/048
摘要： Disclosed herein is technology for, among other things, a semiconductor manufacturing apparatus, and a control system and a control method therefor, by which a target parameter that is measured from a wafer processed with a plurality of processing parameters that are processing conditions of the semiconductor manufacturing apparatus to process a wafer, a multiple classification analysis is performed with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter, a predicted value of the target parameter of the wafer being processed by use of the model formula is calculated, while the processing is being performed, the processing parameters of the processing is modified on the basis of the predicted value, and the processing is continuously performed.
摘要翻译：本文公开了一种技术，其中包括半导体制造装置，以及控制系统及其控制方法，通过该半导体制造装置，从用作为半导体的处理条件的多个处理参数处理的晶片测量的目标参数用于处理晶片的制造装置，利用多个处理参数和目标参数进行多重分类分析，以计算表示所选参数中的目标参数的模型公式，所述晶片的目标参数的预测值由在进行处理的同时，计算出模型公式的使用，根据该预测值对处理的处理参数进行修正，继续进行处理。

2. 发明申请

US20070142957A1 Semiconductor manufacturing apparatus and control system and control method therefor 有权
标题翻译：半导体制造装置及其控制系统及其控制方法
公开(公告)号：US20070142957A1
公开(公告)日：2007-06-21
申请号：US11636064
申请日：2006-12-06
申请人： Kazuhiro Miwa , Kazuhiro Watanabe , Akito Mifune
发明人： Kazuhiro Miwa , Kazuhiro Watanabe , Akito Mifune
IPC分类号： G06F19/00
CPC分类号： G05B13/048
摘要： Disclosed herein is technology for, among other things, a semiconductor manufacturing apparatus, and a control system and a control method therefor, by which a target parameter that is measured from a wafer processed with a plurality of processing parameters that are processing conditions of the semiconductor manufacturing apparatus to process a wafer, a multiple classification analysis is performed with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter, a predicted value of the target parameter of the wafer being processed by use of the model formula is calculated, while the processing is being performed, the processing parameters of the processing is modified on the basis of the predicted value, and the processing is continuously performed.
摘要翻译：本文公开了一种技术，其中包括半导体制造装置，以及控制系统及其控制方法，通过该半导体制造装置，从用作为半导体的处理条件的多个处理参数处理的晶片测量的目标参数用于处理晶片的制造装置，利用多个处理参数和目标参数进行多重分类分析，以计算表示所选参数中的目标参数的模型公式，所述晶片的目标参数的预测值由在进行处理的同时，计算出模型公式的使用，根据该预测值对处理的处理参数进行修正，继续进行处理。

3. 发明授权

US07908025B2 Semiconductor manufacturing apparatus and control system and control method therefor 有权
标题翻译：半导体制造装置及其控制系统及其控制方法
公开(公告)号：US07908025B2
公开(公告)日：2011-03-15
申请号：US11636064
申请日：2006-12-06
申请人： Kazuhiro Miwa , Kazuhiro Watanabe , Akito Mifune
发明人： Kazuhiro Miwa , Kazuhiro Watanabe , Akito Mifune
IPC分类号： G06F19/00
CPC分类号： G05B13/048
摘要： Disclosed herein is technology for, among other things, a semiconductor manufacturing apparatus, and a control system and a control method therefor, by which a target parameter that is measured from a wafer processed with a plurality of processing parameters that are processing conditions of the semiconductor manufacturing apparatus to process a wafer, a multiple classification analysis is performed with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter, a predicted value of the target parameter of the wafer being processed by use of the model formula is calculated, while the processing is being performed, the processing parameters of the processing is modified on the basis of the predicted value, and the processing is continuously performed.
摘要翻译：本文公开了一种技术，其中包括半导体制造装置，以及控制系统及其控制方法，通过该半导体制造装置，从用作为半导体的处理条件的多个处理参数处理的晶片测量的目标参数用于处理晶片的制造装置，利用多个处理参数和目标参数进行多重分类分析，以计算表示所选参数中的目标参数的模型公式，所述晶片的目标参数的预测值由在进行处理的同时，计算出模型公式的使用，根据该预测值对处理的处理参数进行修正，继续进行处理。

4. 发明授权

US5298278A Chemical vapor phase growth method and chemical vapor phase growth apparatus 失效
标题翻译：化学气相生长法和化学气相生长装置
公开(公告)号：US5298278A
公开(公告)日：1994-03-29
申请号：US972390
申请日：1992-11-06
申请人： Akito Mifune
发明人： Akito Mifune
IPC分类号： C23C16/44 , C23C16/42 , C23C16/455 , C30B25/14 , C30B25/16 , H01L21/28 , H01L21/285 , C23C16/00
CPC分类号： C23C16/42
摘要： A chemical vapor phase growth method and apparatus therefor for depositing tungsten silicide, using source gases silane (SiH.sub.4) and tungsten hexafluoride (WF.sub.6). In this apparatus, water vapor at a partial pressure of 10.sup.-8 to 10.sup.-9 order of Torr is supplied in the process of successively depositing tungsten silicide films on semiconductor substrates of plural batches, whereby the sheet resistance of the tungsten silicide films can be made constant through the batches. It is thus possible to solve the problem of a conventional apparatus, i.e., the phenomenon that the sheet resistance of the silicide films increases as the batch number increases. This constant sheet resistance is attained by keeping the thickness of the tungsten silicide films uniform through the process of all batches.
摘要翻译：一种化学气相生长方法及其设备，用于沉积硅化钨，使用源气体硅烷（SiH4）和六氟化钨（WF6）。在该装置中，在多个批次的半导体基板上依次沉积钨硅化物膜的过程中，供给分压为10-8至10-9 Torr的水蒸气，由此硅化钨膜的薄层电阻可以为通过批次不变。因此，可以解决传统装置的问题，即，随着批号增加，硅化物膜的薄层电阻增加的现象。通过使所有批次的过程保持硅化钨膜的厚度均匀，可获得这种恒定的薄层电阻。

5. 发明申请

US20110130861A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND CONTROL SYSTEM AND CONTROL METHOD THEREFOR 失效
标题翻译：半导体制造装置及其控制系统及其控制方法
公开(公告)号：US20110130861A1
公开(公告)日：2011-06-02
申请号：US13020692
申请日：2011-02-03
申请人： Kazuhiro MIWA , Kazuhiro WATANABE , Akito MIFUNE
发明人： Kazuhiro MIWA , Kazuhiro WATANABE , Akito MIFUNE
IPC分类号： G06F19/00
CPC分类号： G05B13/048
摘要： Disclosed herein is technology for, among other things, a semiconductor manufacturing apparatus, and a control system and a control method therefor, by which a target parameter that is measured from a wafer processed with a plurality of processing parameters that are processing conditions of the semiconductor manufacturing apparatus to process a wafer, a multiple classification analysis is performed with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter, a predicted value of the target parameter of the wafer being processed by use of the model formula is calculated, while the processing is being performed, the processing parameters of the processing is modified on the basis of the predicted value, and the processing is continuously performed.
摘要翻译：本文公开了一种技术，其中包括半导体制造装置，以及控制系统及其控制方法，通过该半导体制造装置，从用作为半导体的处理条件的多个处理参数处理的晶片测量的目标参数用于处理晶片的制造装置，利用多个处理参数和目标参数进行多重分类分析，以计算表示所选参数中的目标参数的模型公式，所述晶片的目标参数的预测值由在进行处理的同时，计算出模型公式的使用，根据该预测值对处理的处理参数进行修正，继续进行处理。

6. 发明授权

US5409540A Chemical vapor phase growth method and chemical vapor phase growth apparatus 失效
标题翻译：化学气相生长法和化学气相生长装置
公开(公告)号：US5409540A
公开(公告)日：1995-04-25
申请号：US181249
申请日：1994-01-13
申请人： Akito Mifune
发明人： Akito Mifune
IPC分类号： C23C16/44 , C23C16/42 , C23C16/455 , C30B25/14 , C30B25/16 , H01L21/28 , H01L21/285 , C23C16/00
CPC分类号： C23C16/42
摘要： A chemical vapor phase growth method and apparatus therefor for depositing tungsten silicide, using source gases silane (SiH.sub.4) and tungsten hexafluoride (WF.sub.6). In this apparatus, water vapor at a partial pressure of 10.sup.-8 to 10.sup.-9 order of Torr is supplied in the process of successively depositing tungsten silicide films on semiconductor substrates of plural batches, whereby the sheet resistance of the tungsten silicide films can be made constant through the batches. It is thus possible to solve the problem of a conventional apparatus, i.e., the phenomenon that the sheet resistance of the silicide films increases as the batch number increases. This constant sheet resistance is attained by keeping the thickness of the tungsten silicide films uniform through the process of all batches.
摘要翻译：一种化学气相生长方法及其设备，用于沉积硅化钨，使用源气体硅烷（SiH4）和六氟化钨（WF6）。在该装置中，在多个批次的半导体基板上依次沉积钨硅化物膜的过程中，供给分压为10-8至10-9 Torr的水蒸气，由此硅化钨膜的薄层电阻可以为通过批次不变。因此，可以解决传统装置的问题，即，随着批号增加，硅化物膜的薄层电阻增加的现象。通过使所有批次的过程保持硅化钨膜的厚度均匀，可获得这种恒定的薄层电阻。

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