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    • 1. 发明授权
    • Semiconductor manufacturing apparatus and control system and control method therefor
    • 半导体制造装置及其控制系统及其控制方法
    • US08577494B2
    • 2013-11-05
    • US13020692
    • 2011-02-03
    • Kazuhiro MiwaKazuhiro WatanabeAkito Mifune
    • Kazuhiro MiwaKazuhiro WatanabeAkito Mifune
    • G06F19/00
    • G05B13/048
    • Disclosed herein is technology for, among other things, a semiconductor manufacturing apparatus, and a control system and a control method therefor, by which a target parameter that is measured from a wafer processed with a plurality of processing parameters that are processing conditions of the semiconductor manufacturing apparatus to process a wafer, a multiple classification analysis is performed with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter, a predicted value of the target parameter of the wafer being processed by use of the model formula is calculated, while the processing is being performed, the processing parameters of the processing is modified on the basis of the predicted value, and the processing is continuously performed.
    • 本文公开了一种技术,其中包括半导体制造装置,以及控制系统及其控制方法,通过该半导体制造装置,从用作为半导体的处理条件的多个处理参数处理的晶片测量的目标参数 用于处理晶片的制造装置,利用多个处理参数和目标参数进行多重分类分析,以计算表示所选参数中的目标参数的模型公式,所述晶片的目标参数的预测值由 在进行处理的同时,计算出模型公式的使用,根据该预测值对处理的处理参数进行修正,继续进行处理。
    • 2. 发明申请
    • Semiconductor manufacturing apparatus and control system and control method therefor
    • 半导体制造装置及其控制系统及其控制方法
    • US20070142957A1
    • 2007-06-21
    • US11636064
    • 2006-12-06
    • Kazuhiro MiwaKazuhiro WatanabeAkito Mifune
    • Kazuhiro MiwaKazuhiro WatanabeAkito Mifune
    • G06F19/00
    • G05B13/048
    • Disclosed herein is technology for, among other things, a semiconductor manufacturing apparatus, and a control system and a control method therefor, by which a target parameter that is measured from a wafer processed with a plurality of processing parameters that are processing conditions of the semiconductor manufacturing apparatus to process a wafer, a multiple classification analysis is performed with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter, a predicted value of the target parameter of the wafer being processed by use of the model formula is calculated, while the processing is being performed, the processing parameters of the processing is modified on the basis of the predicted value, and the processing is continuously performed.
    • 本文公开了一种技术,其中包括半导体制造装置,以及控制系统及其控制方法,通过该半导体制造装置,从用作为半导体的处理条件的多个处理参数处理的晶片测量的目标参数 用于处理晶片的制造装置,利用多个处理参数和目标参数进行多重分类分析,以计算表示所选参数中的目标参数的模型公式,所述晶片的目标参数的预测值由 在进行处理的同时,计算出模型公式的使用,根据该预测值对处理的处理参数进行修正,继续进行处理。
    • 3. 发明授权
    • Semiconductor manufacturing apparatus and control system and control method therefor
    • 半导体制造装置及其控制系统及其控制方法
    • US07908025B2
    • 2011-03-15
    • US11636064
    • 2006-12-06
    • Kazuhiro MiwaKazuhiro WatanabeAkito Mifune
    • Kazuhiro MiwaKazuhiro WatanabeAkito Mifune
    • G06F19/00
    • G05B13/048
    • Disclosed herein is technology for, among other things, a semiconductor manufacturing apparatus, and a control system and a control method therefor, by which a target parameter that is measured from a wafer processed with a plurality of processing parameters that are processing conditions of the semiconductor manufacturing apparatus to process a wafer, a multiple classification analysis is performed with the plurality of processing parameters and the target parameter to calculate a model formula expressing the target parameter in a selected parameter, a predicted value of the target parameter of the wafer being processed by use of the model formula is calculated, while the processing is being performed, the processing parameters of the processing is modified on the basis of the predicted value, and the processing is continuously performed.
    • 本文公开了一种技术,其中包括半导体制造装置,以及控制系统及其控制方法,通过该半导体制造装置,从用作为半导体的处理条件的多个处理参数处理的晶片测量的目标参数 用于处理晶片的制造装置,利用多个处理参数和目标参数进行多重分类分析,以计算表示所选参数中的目标参数的模型公式,所述晶片的目标参数的预测值由 在进行处理的同时,计算出模型公式的使用,根据该预测值对处理的处理参数进行修正,继续进行处理。