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1. 发明授权

US09406512B2 Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects 有权
公开(公告)号：US09406512B2
公开(公告)日：2016-08-02
申请号：US14720821
申请日：2015-05-24
申请人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
发明人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
IPC分类号： H01L21/033 , H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532
CPC分类号： H01L21/0338 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31144 , H01L21/76801 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer including a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. A second layer of the interconnect structure is disposed above the first layer of the interconnect structure, the second layer including a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. First and second dielectric regions are disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The first dielectric region is composed of a first cross-linked photolyzable material, and the second dielectric region is composed of a second, different, cross-linked photolyzable material.

2. 发明申请

US20150255284A1 SELF-ALIGNED VIA PATTERNING WITH MULTI-COLORED PHOTOBUCKETS FOR BACK END OF LINE (BEOL) INTERCONNECTS 审中-公开
标题翻译：自动对准通过多行彩色胶片的背面（BEOL）互连
公开(公告)号：US20150255284A1
公开(公告)日：2015-09-10
申请号：US14720821
申请日：2015-05-24
申请人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
发明人： Robert L. Bristol , James M. Blackwell , Alan M. Myers , Kanwal Jit Singh
IPC分类号： H01L21/033 , H01L23/532 , H01L23/522 , H01L21/768 , H01L23/528
CPC分类号： H01L21/0338 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/31144 , H01L21/76801 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer including a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. A second layer of the interconnect structure is disposed above the first layer of the interconnect structure, the second layer including a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. First and second dielectric regions are disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The first dielectric region is composed of a first cross-linked photolyzable material, and the second dielectric region is composed of a second, different, cross-linked photolyzable material.
摘要翻译：描述了通过用于后端（BEOL）互连的多色photobuckets图案化的自对准。在一个示例中，用于集成电路的互连结构包括布置在衬底上方的互连结构的第一层，第一层包括在第一方向上交替的金属线和介质线的第一光栅。介质线具有高于金属线的最上表面的最上表面。所述互连结构的第二层设置在所述互连结构的所述第一层上方，所述第二层包括垂直于所述第一方向的第二方向的交替金属线和介质线的第二光栅。介质线具有比第二光栅的金属线的最下表面低的最低表面。第二光栅的介质线与第一光栅的介质线重叠并接触，但不同。第一和第二电介质区域设置在第一光栅的金属线和第二光栅的金属线之间，并且在与第一光栅的介电线的上部和第二栅的介电线的下部相同的平面中光栅。第一电介质区域由第一交联光可光化材料组成，第二电介质区域由第二不同的交联光可光化材料组成。

3. 发明申请

US20150179578A1 TECHNIQUES FOR FORMING INTERCONNECTS IN POROUS DIELECTRIC MATERIALS 有权
标题翻译：在多孔电介质材料中形成互连的技术
公开(公告)号：US20150179578A1
公开(公告)日：2015-06-25
申请号：US14139970
申请日：2013-12-24
申请人： Christopher J. Jezewski , David J. Michalak , Kanwal Jit Singh , Alan M. Myers
发明人： Christopher J. Jezewski , David J. Michalak , Kanwal Jit Singh , Alan M. Myers
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/5329 , H01L21/02203 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76808 , H01L21/7682 , H01L21/76822 , H01L21/76826 , H01L21/76838 , H01L23/528 , H01L23/53209 , H01L23/53223 , H01L23/53238 , H01L23/53257 , H01L23/53266 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： Techniques are disclosed for forming interconnects in porous dielectric materials. In accordance with some embodiments, the porosity of a host dielectric layer may be reduced temporarily by stuffing its pores with a sacrificial pore-stuffing material, such as titanium nitride (TiN), titanium dioxide (TiO2), or other suitable sacrificial material having a high etch selectivity compared to the metallization and dielectric material of the interconnect. After interconnect formation within the stuffed dielectric layer, the sacrificial pore-stuffing material can be removed from the pores of the host dielectric. In some cases, removal and curing can be performed with minimal or otherwise negligible effect on the dielectric constant (κ-value), leakage performance, and/or time-dependent dielectric breakdown (TDDB) properties of the host dielectric layer. Some embodiments can be utilized, for example, in processes involving atomic layer deposition (ALD)-based and/or chemical vapor deposition (CVD)-based backend metallization of highly porous, ultra-low-κ (ULK) dielectric materials.
摘要翻译：公开了用于在多孔电介质材料中形成互连的技术。根据一些实施例，可以通过用诸如氮化钛（TiN），二氧化钛（TiO 2）或其它合适的牺牲材料的牺牲孔填充材料填充其孔来临时减小主介质层的孔隙率，与互连的金属化和介电材料相比，具有高蚀刻选择性。在填充电介质层内形成互连之后，可以从主电介质的孔中去除牺牲孔填充材料。在一些情况下，可以对介电常数（＆kgr--value），泄漏性能和/或时间依赖的介电击穿（TDDB）性能的最小或其他可忽略的影响进行去除和固化。一些实施例可以用于例如涉及基于原子层沉积（ALD）的和/或化学气相沉积（CVD）的后端金属化的高度多孔，超低kgr的金属化过程。（ULK）电介质材料。

4. 发明授权

US07723208B2 Integrated re-combiner for electroosmotic pumps using porous frits 有权
标题翻译：使用多孔玻璃料的电渗泵的集成再组合器
公开(公告)号：US07723208B2
公开(公告)日：2010-05-25
申请号：US10669205
申请日：2003-09-24
申请人： Sarah E. Kim , R. Scott List , James G. Maveety , Alan M. Myers , Quat T. Vu
发明人： Sarah E. Kim , R. Scott List , James G. Maveety , Alan M. Myers , Quat T. Vu
IPC分类号： H01L21/30
CPC分类号： F04B19/006 , H01L23/473 , H01L2224/16 , H01L2224/73253 , H01L2924/01078 , H01L2924/10253 , H01L2924/00
摘要： Trenches may be formed in the upper surfaces of a pair of wafers. Each trench may be coated with a catalyst that is capable of removing oxygen or hydrogen from a fluid used for cooling in a system making use of the electroosmotic effect for pumping. Channels may be formed to communicate fluid to and from the trench coated with the catalyst. The substrates may be combined in face-to-face abutment, for example using copper-to-copper bonding to form a re-combiner.
摘要翻译：沟槽可以形成在一对晶片的上表面中。每个沟槽可以涂覆有能够在利用用于泵送的电渗效应的系统中用于冷却的流体中除去氧气或氢气的催化剂。可以形成通道以将流体与涂覆有催化剂的沟槽连通。基板可以以面对面邻接方式组合，例如使用铜 - 铜键合来形成再组合器。

5. 发明授权

US07270988B2 Identification and characterization of a novel alpha-amylase from maize endosperm 失效
标题翻译：来自玉米胚乳的新型α-淀粉酶的鉴定和表征
公开(公告)号：US07270988B2
公开(公告)日：2007-09-18
申请号：US10952551
申请日：2004-09-27
申请人： Martha G. James , Alan M. Myers , Christophe Colleoni , Kevin D. Stokes
发明人： Martha G. James , Alan M. Myers , Christophe Colleoni , Kevin D. Stokes
IPC分类号： C12N9/32 , C12N15/87 , C12N5/04 , C07H21/04 , C12Q1/68 , A01H1/00
CPC分类号： C12N9/2422 , C12N15/8245 , C12P19/14
摘要： SHE, a Starch Hydrolytic Enzyme active in maize endosperm (Zea mays), and the cDNA sequence encoding SHE are disclosed. The specificity of native, purified SHE is similar, in general terms, to previously known alpha-amylases. However, the activity of SHE toward amylopectin results in hydrolysis products that are distinctly different from those of other alpha-amylases. SHE, and its homologous equivalents in other plants such as rice, Arabidopsis, apple and potato, can be used in starch processing for generating different, e.g., larger sized, alpha-limit dextrins for industrial use, as compared to those generated by previously known alpha-amylases or other starch hydrolytic enzymes. In addition, modification of the expression of this enzyme in transgenic maize plants or in other transgenic organisms (including bacteria, yeast, and other plant species) can be useful for the generation of novel starch forms or altered starch metabolism.
摘要翻译： SHE，在玉米胚乳（Zea mays）中活性的淀粉水解酶，以及编码SHE的cDNA序列。天然纯化的SHE的特异性通常与以前已知的α-淀粉酶相似。然而，SHE对支链淀粉的活性导致与其它α-淀粉酶明显不同的水解产物。 SHE及其在其他植物如水稻，拟南芥，苹果和马铃薯中的同源等同物可用于淀粉加工中，用于产生不同的，例如较大尺寸的工业用α限制糊精，与之前已知的 α-淀粉酶或其他淀粉水解酶。此外，在转基因玉米植物或其他转基因生物（包括细菌，酵母和其他植物物种）中修饰该酶的表达可用于产生新的淀粉形式或改变的淀粉代谢。

6. 发明授权

US06995300B2 Isolation of SU1, a starch debranching enzyme, the product of the maize gene sugary1 失效
标题翻译：分离SU1，淀粉脱支酶，玉米基因的产物含糖1
公开(公告)号：US06995300B2
公开(公告)日：2006-02-07
申请号：US10179562
申请日：2002-06-25
申请人： Alan M. Myers , Martha Graham James
发明人： Alan M. Myers , Martha Graham James
IPC分类号： C12N15/82 , C12N15/29 , C12N5/10 , A01H5/00 , C12P19/04
CPC分类号： C12N15/8245 , C12N9/2451 , C12N9/2457 , C12N9/246 , C12Y302/01041 , C12Y302/01068
摘要： SU1, a starch debranching enzyme active in maize endosperm (Zea mays), and the cDNA and genomic sequences encoding SU1 are disclosed. The amino acid sequence is significantly similar to that of bacterial isoamylases, enzymes that hydrolyze α-(1→6) glycosidic bonds. Amino acid sequence similarity establishes SU1 as a member of the α-amylase superfamily of starch hydrolytic enzymes. Also disclosed are antibodies reactive with the SU1 protein, methods of producing antibodies to the SU1 protein, methods of producing fusion proteins including SU1 as well as recombinant SU1 and methods of producing transgenic plants with a modified Su1 gene. The native or expressed SU1 protein can serve as a replacement for the bacterial and fungal enzymes currently used in the starch processing industry.
摘要翻译： SU1是在玉米胚乳（Zea mays）中活性的淀粉脱支酶，并且公开了编码SU1的cDNA和基因组序列。氨基酸序列与细菌异戊酰酶（水解α-（1-> 6）糖苷键的酶）显着相似。氨基酸序列相似性建立了SU1作为淀粉水解酶的α-淀粉酶超家族的成员。还公开了与SU1蛋白反应的抗体，产生SU1蛋白的抗体的方法，产生包括SU1的融合蛋白的方法以及重组SU1以及用修饰的Su1基因产生转基因植物的方法。天然或表达的SU1蛋白可以作为淀粉加工业目前使用的细菌和真菌酶的替代物。

7. 发明授权

US06410716B1 Isolation of SU1, a starch debranching enzyme, the product of the maize gene sugaryl 失效
标题翻译：分离SU1，淀粉脱支酶，玉米基因的产物含糖1
公开(公告)号：US06410716B1
公开(公告)日：2002-06-25
申请号：US09256741
申请日：1999-02-24
申请人： Alan M. Myers , Martha Graham James
发明人： Alan M. Myers , Martha Graham James
IPC分类号： A01H400
CPC分类号： C12N9/2457 , C12N9/2451 , C12N9/246 , C12N15/8245 , C12Y302/01041 , C12Y302/01068
摘要： SU1, a starch debranching enzyme active in maize endosperm (Zea mays), and the cDNA and genomic sequences encoding SU1 are disclosed. The amino acid sequence is significantly similar to that of bacterial isoamylases, enzymes that hydrolyze &agr;-(1→6) glycosidic bonds. Amino acid sequence similarity establishes SU1 as a member of the &agr;-amylase superfamily of starch hydrolytic enzymes. Also disclosed are antibodies reactive with the SU1 protein, methods of producing antibodies to the SU1 protein, methods of producing fusion proteins including SU1 as well as recombinant SU1 and methods of producing transgenic plants with a modified su1 gene. The native or expressed SU1 protein can serve as a replacement for the bacterial and fungal enzymes currently used in the starch processing industry.
摘要翻译： SU1是在玉米胚乳（Zea mays）中活性的淀粉脱支酶，并且公开了编码SU1的cDNA和基因组序列。氨基酸序列与细菌异戊酰酶（水解α-（1-> 6）糖苷键的酶）显着相似。氨基酸序列相似性建立了SU1作为淀粉水解酶的α-淀粉酶超家族的成员。还公开了与SU1蛋白反应的抗体，产生SU1蛋白的抗体的方法，产生包括SU1的融合蛋白的方法以及重组SU1以及用修饰的su1基因产生转基因植物的方法。天然或表达的SU1蛋白可以作为淀粉加工业目前使用的细菌和真菌酶的替代物。

8. 发明授权

US06406995B1 Pattern-sensitive deposition for damascene processing 失效
标题翻译：用于镶嵌加工的图案敏感沉积
公开(公告)号：US06406995B1
公开(公告)日：2002-06-18
申请号：US09345586
申请日：1999-06-30
申请人： Makarem A. Hussein , Alan M. Myers , Charles H. Recchia , Sam Sivakumar , Angelo W. Kandas
发明人： Makarem A. Hussein , Alan M. Myers , Charles H. Recchia , Sam Sivakumar , Angelo W. Kandas
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L21/76835
摘要： A method of forming an interconnection including the steps of forming a sacrificial material that comprises a physical property that is generally insensitive to a photo-reaction in a via through a dielectric material to a masking material over a conductive material. The method also includes forming a trench over in the dielectric material over the via and removing the sacrificial material from the via.
摘要翻译：一种形成互连的方法，包括以下步骤：形成牺牲材料，所述牺牲材料包括通过电介质材料的通孔中的光反应通常对导电材料上的掩模材料不敏感的物理性质。该方法还包括在通孔之上的电介质材料中形成沟槽，并从通孔去除牺牲材料。

9. 发明授权

US5858765A Constitutive pseudohyphal growth yeast mutants 失效
标题翻译：组成型假菌丝生长酵母突变体
公开(公告)号：US5858765A
公开(公告)日：1999-01-12
申请号：US61636
申请日：1993-05-12
申请人： Alan M. Myers , Pascal Madaule
发明人： Alan M. Myers , Pascal Madaule
IPC分类号： C12N1/18 , C12N1/19 , C12N9/12 , C12N15/01 , C12N15/81 , C12N15/00
CPC分类号： C12N15/01 , C12N1/18 , C12N15/81 , C12N9/12
摘要： An isolated gene and mutations thereof capable of imparting constitutive pseudohyphal growth to S. cerevisiae is provided. The isolated wild type gene referred to as ELM1 is also capable of coding for a novel protein kinase that determines the yeast morphology and specific physiological properties.
摘要翻译：提供了能够将酿酒酵母构成型假菌丝生长赋予分离的基因及其突变。被称为ELM1的分离的野生型基因也能够编码决定酵母形态和特定生理特性的新型蛋白激酶。

10. 发明授权

US5619071A Anchored via connection 失效
标题翻译：通过连接锚定
公开(公告)号：US5619071A
公开(公告)日：1997-04-08
申请号：US515318
申请日：1995-08-15
申请人： Alan M. Myers , Peter K. Charvat , Thomas A. Letson , Shi-ning Yang , Peng Bai
发明人： Alan M. Myers , Peter K. Charvat , Thomas A. Letson , Shi-ning Yang , Peng Bai
IPC分类号： H01L21/3213 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/41
CPC分类号： H01L21/76805 , H01L21/32133 , H01L21/32134 , H01L21/76804 , H01L21/76838 , H01L23/5226 , H01L23/53223 , H01L2924/0002 , H01L2924/3011 , Y10S257/915
摘要： A novel high performance and reliable interconnection structure for preventing via delamination. The interconnection structure of the present invention comprises a via connection which extends into and undercuts an underlying interconnection line to lock the via connection into the interconnection line.
摘要翻译：一种新颖的高性能和可靠的互连结构，用于防止通过分层。本发明的互连结构包括通孔连接，其延伸到下面的互连线并将其下切以将通孔连接锁定到互连线中。

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