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1. 发明授权

US09536711B2 Method and apparatus for DC voltage control on RF-powered electrode 有权
标题翻译： RF电源电压直流电压控制方法及装置
公开(公告)号：US09536711B2
公开(公告)日：2017-01-03
申请号：US12047820
申请日：2008-03-13
申请人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
发明人： Rajinder Dhindsa , Eric Hudson , Alexei Marakhtanov , Maryam Moravej , Andreas Fischer
IPC分类号： H01J37/32
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32174 , H01J37/32623 , H01J37/32697
摘要： In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters.
摘要翻译：在等离子体处理室中，提供了一种处理基板的方法。该方法包括在配置有上电极（UE）和下电极（LE）的等离子体处理室中支撑衬底，配置至少一个射频电源以点燃UE和LE之间的等离子体，并提供导电耦合导电耦合环耦合到LE以提供导电路径。该方法还包括提供等离子体对衬底周边（PFSP）环，PFSP环设置在导电耦合环上方。该方法还包括将PFSP环耦合到通过RF滤波器的直流（DC）接地中的至少一个，通过RF滤波器的DC接地和可变电阻器，通过RF滤波器的正直流电源以及负直流电源通过RF滤波器控制等离子体处理参数。

2. 发明授权

US08847495B2 Movable grounding arrangements in a plasma processing chamber and methods therefor 有权
标题翻译：等离子体处理室中的可移动接地装置及其方法
公开(公告)号：US08847495B2
公开(公告)日：2014-09-30
申请号：US13616641
申请日：2012-09-14
申请人： Anthony de la Llera , Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Anthony de la Llera , Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： H01J7/24
CPC分类号： H01J37/32082 , H01J37/32577
摘要： A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.
摘要翻译：一种具有至少一个等离子体处理室的等离子体处理系统，包括可移动接地部件，RF接触部件，其被配置为当RF源向RF接触部件提供RF能量时从RF源接收RF能量;以及接地部件加上地面。等离子体处理系统还包括可操作地耦合到可移动接地部件的致动器，用于将可移动接地部件设置在第一位置和第二位置。第一位置表示可移动接地部件不与RF接触部件和接地部件中的至少一个接触的位置。第二位置表示可移动接地部件与RF接触部件和接地部件接触的位置。

3. 发明授权

US08826855B2 C-shaped confinement ring for a plasma processing chamber 有权
标题翻译：用于等离子体处理室的C形限制环
公开(公告)号：US08826855B2
公开(公告)日：2014-09-09
申请号：US12828065
申请日：2010-06-30
申请人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
发明人： Michael C. Kellogg , Alexei Marakhtanov , Rajinder Dhindsa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32623
摘要： Described herein is a confinement ring useful as a component of a capacitively-coupled plasma processing chamber. Inner surfaces of the confinement ring provide an extended plasma confinement zone surrounding a gap between an upper electrode and a lower electrode on which a semiconductor substrate is supported during plasma processing in the chamber.
摘要翻译：这里描述的是用作电容耦合等离子体处理室的组件的限制环。限制环的内表面提供了在腔室中的等离子体处理期间围绕上部电极和下部电极之间的间隙的延长的等离子体限制区域，其上支撑半导体衬底。

4. 发明申请

US20140060739A1 RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR 审中-公开
标题翻译：等离子体处理系统中的RF接地回路及其方法
公开(公告)号：US20140060739A1
公开(公告)日：2014-03-06
申请号：US13662331
申请日：2012-10-26
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Michael C. Kellogg , Andy Desepte , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Michael C. Kellogg , Andy Desepte , Andrew D. Bailey, III
IPC分类号： H01J37/04
CPC分类号： H01J37/04 , H01J37/32091 , H01J37/32174
摘要： Methods and apparatus for operating the plasma processing chamber of a plasma processing tool in at least two modes are disclosed. In the first mode, the substrate-bearing assembly is movable within a gap-adjustable range to adjust the gap between the electrodes to accommodate different processing requirements. In this first mode, RF ground return path continuity is maintained irrespective of the gap distance as long as the gap distance is within the gap-adjustable range. In the second mode, the substrate bearing assembly is capable of moving to further open the gap to accommodate unimpeded substrate loading/unloading.
摘要翻译：公开了以至少两种模式操作等离子体处理工具的等离子体处理室的方法和装置。在第一模式中，基板支承组件可在间隙可调节范围内移动，以调节电极之间的间隙以适应不同的加工要求。在该第一模式中，只要间隙距离在间隙可调整范围内，RF接地返回路径连续性被维持而与间隙距离无关。在第二模式中，基板支承组件能够移动以进一步打开间隙以适应无阻碍的基板装载/卸载。

5. 发明申请

US20140034243A1 APPARATUS FOR PLASMA PROCESSING SYSTEM WITH TUNABLE CAPACITANCE 审中-公开
标题翻译：用于具有可调电容的等离子体处理系统的装置
公开(公告)号：US20140034243A1
公开(公告)日：2014-02-06
申请号：US14058101
申请日：2013-10-18
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： H01J37/21
CPC分类号： H01J37/21 , H01J37/32091 , H01J37/32642 , H01J37/32697
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The substrate is disposed above a chuck and surrounded by an edge ring, which is electrically isolated from the chuck. The system includes a RF power, which provides power to the chuck. The system also includes a tunable capacitance arrangement, which is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The system further includes the plasma processing chamber configured to strike plasma to process the substrate, which is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.
摘要翻译：提供了一种等离子体处理系统，其具有用于处理基板的等离子体处理室。基板设置在卡盘上方并被与卡盘电隔离的边缘环包围。该系统包括向卡盘供电的RF功率。该系统还包括可调电容布置，其耦合到边缘环以提供与边缘环的RF耦合，导致边缘环具有边缘环电位。该系统还包括等离子体处理室，该等离子体处理室被配置成撞击等离子体以处理衬底，该处理在可调谐电容布置被配置成使得边缘环电位在处理衬底的同时能够动态调节到衬底的DC电位。

6. 发明申请

US20130240147A1 METHODS AND APPARATUS FOR SELECTIVELY MODULATING AZIMUTHAL NON-UNIFORMITY IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中选择性地调整AZIMUTHAL非均匀性的方法和装置
公开(公告)号：US20130240147A1
公开(公告)日：2013-09-19
申请号：US13423284
申请日：2012-03-19
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32669
摘要： Methods and apparatus for modulating azimuthal non-uniformity in a plasma processing chamber are disclosed. Apparatus includes a plasma processing system having a plasma processing chamber. There is included an RF power supply and a lower electrode configured to receive RF signal from the power supply. There is also included magnet ring disposed off-center relative to a center of the lower electrode, the magnet ring further disposed in one of a first position and a second position, the first position being below the lower electrode, the second position being around an outer periphery of the lower electrode.
摘要翻译：公开了用于调制等离子体处理室中的方位不均匀性的方法和装置。装置包括具有等离子体处理室的等离子体处理系统。包括RF电源和配置成从电源接收RF信号的下电极。还包括相对于下电极的中心偏心设置的磁环，磁环进一步设置在第一位置和第二位置中的一个位置，第一位置在下电极下方，第二位置围绕下电极下电极的外周。

7. 发明申请

US20130127124A1 PERIPHERAL RF FEED AND SYMMETRIC RF RETURN WITH RF STRAP INPUT 有权
标题翻译：外围射频馈线和对射RF返回与RF STRAP输入
公开(公告)号：US20130127124A1
公开(公告)日：2013-05-23
申请号：US13419369
申请日：2012-03-13
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： B23B31/28 , H05K13/00
CPC分类号： H01J37/32577 , H01J37/32715 , H01L21/6831 , Y10T29/49117 , Y10T29/53178 , Y10T279/23
摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.
摘要翻译：提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。根据一个实施例，提供了一种用于等离子体处理的卡盘组件。卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

8. 发明申请

US20130126476A1 DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES 有权
标题翻译：上电极双区温度控制
公开(公告)号：US20130126476A1
公开(公告)日：2013-05-23
申请号：US13420949
申请日：2012-03-15
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Ryan Bise , Lumin Li , Sang Ki Nam , Jim Rogers , Eric Hudson , Gerardo Delgadino , Andrew D. Bailey, III , Mike Kellogg , Anthony de la LIera
IPC分类号： C23F1/00 , C23F1/08
CPC分类号： H01J37/32642 , H01J37/3244 , H01J37/32541 , H01J37/32724 , H01L21/67109
摘要： A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.
摘要翻译：等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。

9. 发明申请

US20130059448A1 Pulsed Plasma Chamber in Dual Chamber Configuration 审中-公开
标题翻译：脉冲等离子室双腔配置
公开(公告)号：US20130059448A1
公开(公告)日：2013-03-07
申请号：US13227404
申请日：2011-09-07
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andrew D. Bailey, III
IPC分类号： H01L21/3065 , H01L21/306 , C23F1/08
摘要： Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.
摘要翻译：提供了用于在脉冲等离子体室中处理衬底的实施例。具有两个腔室的处理装置，由流体连接腔室的板分开，包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器设置耦合到顶部电极的第一射频（RF）电源的电压和频率。脉冲控制器可操作地为耦合到底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。系统控制器可操作以设定参数以调节室之间的物质流动，以辅助负离子蚀刻，以在关闭期间中止余辉期间晶片表面上的过多正电荷，并且辅助重击在ON期间的底部等离子体。

10. 发明授权

US08211324B2 Methods and arrangements for controlling plasma processing parameters 有权
标题翻译：控制等离子体处理参数的方法和布置
公开(公告)号：US08211324B2
公开(公告)日：2012-07-03
申请号：US12839375
申请日：2010-07-19
申请人： Rajinder Dhindsa , Alexei Marakhtanov
发明人： Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/32568 , H01J37/32577
摘要： In a plasma processing chamber, a method for processing a substrate is provided. The substrate is disposed above a chuck and surrounded by an edge ring, which is electrically isolated from the chuck. The method includes providing first RF power to the chuck. The method also includes providing an edge ring RF voltage control arrangement, which is coupled to the edge ring to provide second RF power to the edge ring. The second RF power being delivered to the edge ring has a frequency of about 20 KHz to about 10 MHz, resulting in the edge ring having anedgering potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate, the substrate being processed while the edge ring RF voltage control arrangement is configured to control the second RF power to the edge ring such that a predefined potential difference is maintained between the edge ring and the substrate.
摘要翻译：在等离子体处理室中，提供了一种处理基板的方法。基板设置在卡盘上方并被与卡盘电隔离的边缘环包围。该方法包括向卡盘提供第一RF功率。该方法还包括提供边缘环RF电压控制装置，其耦合到边缘环以向边缘环提供第二RF功率。传送到边缘环的第二RF功率具有约20KHz至约10MHz的频率，导致边缘环具有消除电位。该方法还包括在等离子体处理室内产生等离子体以处理衬底，衬底正在被处理，同时边缘环RF电压控制装置被配置成控制到边缘环的第二RF功率，使得预定的电位差保持在边缘环和基底。

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