专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09928995B2 Methods for preventing plasma un-confinement events in a plasma processing chamber 有权
公开(公告)号：US09928995B2
公开(公告)日：2018-03-27
申请号：US12820020
申请日：2010-06-21
申请人： Andreas Fischer , Rajinder Dhindsa
发明人： Andreas Fischer , Rajinder Dhindsa
IPC分类号： B23P6/00 , H01J37/32
CPC分类号： H01J37/32495 , H01J37/32082 , H01J37/32623 , Y10T29/49718
摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

2. 发明授权

US09230779B2 Methods and apparatus for correcting for non-uniformity in a plasma processing system 有权
标题翻译：用于校正等离子体处理系统中的不均匀性的方法和装置
公开(公告)号：US09230779B2
公开(公告)日：2016-01-05
申请号：US13423279
申请日：2012-03-19
申请人： Sang Ki Nam , Rajinder Dhindsa
发明人： Sang Ki Nam , Rajinder Dhindsa
IPC分类号： H01J37/32 , C23C16/44 , C23C16/455 , C23C16/509 , A23G3/26 , B05B12/00 , B05B13/04 , H01L21/67
CPC分类号： H01J37/32183 , A23G3/26 , B05B12/00 , B05B13/0431 , B05B13/0452 , C23C16/4401 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32009 , H01J37/32082 , H01J37/321 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32935 , H01J37/32972 , H01J37/3299 , H01L21/67069 , H01L21/6715 , H01L21/67253
摘要： A plasma processing system having a plasma processing chamber comprising at least one of a chamber wall and a chamber liner is disclosed. The plasma processing system includes a plurality of ground straps disposed around a circumference of a chamber surface, the chamber surface being one of the chamber walls and the chamber liner of the plasma processing chamber. The plasma processing system further includes at least a first impedance device coupled to at least a first ground strap of the plurality of ground straps, wherein a second ground strap of the plurality of ground straps is not provided with a second impedance device having the same impedance value as the first impedance device.
摘要翻译：公开了一种具有等离子体处理室的等离子体处理系统，其包括室壁和腔室衬套中的至少一个。等离子体处理系统包括围绕室表面的圆周设置的多个接地带，室表面是等离子体处理室的室壁和室衬套之一。等离子处理系统还包括耦合到多个接地带的至少第一接地带的至少第一阻抗器件，其中多个接地带的第二接地带没有设置具有相同阻抗的第二阻抗器件值作为第一阻抗器件。

3. 发明授权

US09184028B2 Dual plasma volume processing apparatus for neutral/ion flux control 有权
标题翻译：用于中性/离子通量控制的双等离子体体积处理装置
公开(公告)号：US09184028B2
公开(公告)日：2015-11-10
申请号：US12850559
申请日：2010-08-04
申请人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhatnov , Andrew D. Bailey, III
IPC分类号： C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01L21/67069 , H01L21/67259 , H01L21/6831 , H01L22/26
摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.
摘要翻译：半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

4. 发明授权

US08911590B2 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US08911590B2
公开(公告)日：2014-12-16
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：广义而言，本发明的实施例提供了一种改进的室清洁机构。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

5. 发明授权

US08898889B2 Chuck assembly for plasma processing 有权
标题翻译：用于等离子体处理的卡盘组件
公开(公告)号：US08898889B2
公开(公告)日：2014-12-02
申请号：US13419369
申请日：2012-03-13
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： B23P19/00 , H01J37/32 , H01L21/683
CPC分类号： H01J37/32577 , H01J37/32715 , H01L21/6831 , Y10T29/49117 , Y10T29/53178 , Y10T279/23
摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source.
摘要翻译：提出了用于对称RF传输的外围RF馈送和对称RF返回的系统和方法。根据一个实施例，提供了一种用于等离子体处理的卡盘组件。卡盘组件包括：静电卡盘，其具有在第一侧上的基板支撑表面，在与基板支撑表面相对的第二侧耦合到静电卡盘的设备板，被配置为提供RF功率的外围RF馈送，外围RF 进料具有接触设备板的周边的第一部分和将外围RF进料耦合到RF源的RF带。

6. 发明授权

US08709202B2 Upper electrode backing member with particle reducing features 有权
标题翻译：具有减少粒子特性的上部电极背衬部件
公开(公告)号：US08709202B2
公开(公告)日：2014-04-29
申请号：US12967750
申请日：2010-12-14
申请人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
发明人： Anthony De La Llera , Allan K. Ronne , Jaehyun Kim , Jason Augustino , Rajinder Dhindsa , Yen-Kun Wang , Saurabh J. Ullal , Anthony J. Norell , Keith Comendant , William M. Denty, Jr.
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32449 , H01J37/32009 , H01J37/32541 , H01J37/3255
摘要： Components of a plasma processing apparatus includes a backing member with gas passages attached to an upper electrode with gas passages. To compensate for the differences in coefficient of thermal expansion between the metallic backing member and upper electrode, the gas passages are positioned and sized such that they are misaligned at ambient temperature and substantially concentric at an elevated processing temperature. Non-uniform shear stresses can be generated in the elastomeric bonding material, due to the thermal expansion. Shear stresses can either be accommodated by applying an elastomeric bonding material of varying thickness or using a backing member comprising of multiple pieces.
摘要翻译：等离子体处理装置的组件包括具有气体通道的背衬构件，气体通道连接到具有气体通道的上部电极。为了补偿金属背衬构件和上部电极之间的热膨胀系数的差异，气体通道的定位和尺寸使得它们在环境温度下不对准并且在升高的处理温度下基本上同心。由于热膨胀，弹性粘合材料中可能会产生不均匀的剪切应力。剪切应力可以通过施加不同厚度的弹性粘合材料或使用包括多个片的背衬构件来适应。

7. 发明授权

US08652298B2 Triode reactor design with multiple radiofrequency powers 有权
标题翻译：具有多个射频功率的三极管反应器设计
公开(公告)号：US08652298B2
公开(公告)日：2014-02-18
申请号：US13301725
申请日：2011-11-21
申请人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
发明人： Rajinder Dhindsa , Alexei Marakhtanov , Gerardo Delgadino , Eric Hudson , Bi Ming Yen , Andrew D. Bailey, III
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32165
摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.
摘要翻译：提供了半导体制造方法，系统和计算机程序。一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。第一，第二和第三电源耦合到底部电极。此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源。

8. 发明申请

US20130240482A1 METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM 有权
标题翻译：在等离子体处理系统中选择性地修改射频电流的方法和装置
公开(公告)号：US20130240482A1
公开(公告)日：2013-09-19
申请号：US13423281
申请日：2012-03-19
申请人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
发明人： Sang Ki Nam , Rajinder Dhindsa , Alexei Marakhtanov
IPC分类号： C23F1/08 , G01N33/00
CPC分类号： H01J37/32935 , C23C16/4585 , C23C16/505 , C23C16/52 , H01J37/32082 , H01J37/32174 , H01J37/32183 , H01J37/32697 , H01J37/32715 , H01J37/3299 , H01J2237/327 , H01J2237/3343
摘要： Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.
摘要翻译：公开了用于修改RF电流路径长度的方法和装置。装置包括具有RF电源的等离子体处理系统和具有导电部分的下电极。包括设置在RF电源和导电部分之间的RF电流路径中的绝缘部件。包括设置在绝缘部件内的多个RF路径修改器，多个RF路径修改器相对于从绝缘部件的中心绘制的参考角度设置在不同的角位置，由此至少第一个的RF路径修改器电连接到导电部分，并且多个RF路径修改器中的至少第二个RF电路修改器未电连接到导电部分。

9. 发明授权

US08500952B2 Plasma confinement rings having reduced polymer deposition characteristics 有权
标题翻译：具有降低的聚合物沉积特性的等离子体约束环
公开(公告)号：US08500952B2
公开(公告)日：2013-08-06
申请号：US13585570
申请日：2012-08-14
申请人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
发明人： Rajinder Dhindsa , Felix Kozakevich , James H. Rogers , David Trussell
IPC分类号： C23C16/00 , C23C16/509 , H01L21/306 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/32477 , H01J37/32522 , H01J37/32642 , Y10S156/914 , Y10S156/915
摘要： Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.
摘要翻译：提供等离子体限制环组件，其包括适于在等离子体暴露的表面上达到足够高的温度的限制环，以避免聚合物沉积在这些表面上。等离子体约束环包括适于在包括等离子体暴露表面的环的选定部分处定位加热的热扼流圈。热扼流圈减少从这些部分到环的其他部分的热传导，这导致环的选定部分在等离子体处理期间达到期望的温度。

10. 发明申请

US20130180951A1 ETCH WITH INCREASED MASK SELECTIVITY 有权
标题翻译： ETCH具有增加的面膜选择性
公开(公告)号：US20130180951A1
公开(公告)日：2013-07-18
申请号：US13352138
申请日：2012-01-17
申请人： Ananth INDRAKANTI , Rajinder DHINDSA
发明人： Ananth INDRAKANTI , Rajinder DHINDSA
IPC分类号： B44C1/22
CPC分类号： H01L21/31116 , H01J37/32091 , H01J2237/334 , H01L21/027 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/31144
摘要： A method for etching features in an etch layer in a plasma processing chamber is provided. An etch gas is flowed into the plasma processing chamber. A top outer electrode is maintained at a temperature of at least 150° C. during the etching of the features. The etch gas is formed into a plasma, which etches the etch layer.
摘要翻译：提供了一种用于蚀刻等离子体处理室中的蚀刻层中的特征的方法。蚀刻气体流入等离子体处理室。在蚀刻特征期间，顶部外部电极保持在至少150℃的温度。蚀刻气体形成等离子体，蚀刻蚀刻层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式