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1. 发明申请

US20120238102A1 METHODS FOR ETCH OF SIN FILMS 有权
标题翻译：方法用于刻蚀薄膜
公开(公告)号：US20120238102A1
公开(公告)日：2012-09-20
申请号：US13416277
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体在等离子体产生区域中。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

2. 发明授权

US09064815B2 Methods for etch of metal and metal-oxide films 有权
标题翻译：金属和金属氧化物膜的蚀刻方法
公开(公告)号：US09064815B2
公开(公告)日：2015-06-23
申请号：US13416223
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461 , H01L21/311 , H01J37/32 , H01L21/3213
CPC分类号： H01L21/31116 , H01J37/32422 , H01L21/31122 , H01L21/32136
摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟气体在等离子体产生区域中产生等离子体。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

3. 发明授权

US08999856B2 Methods for etch of sin films 有权
标题翻译：蚀刻薄膜的方法
公开(公告)号：US08999856B2
公开(公告)日：2015-04-07
申请号：US13416277
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： H01L21/302 , H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体在等离子体产生区域中。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

4. 发明申请

US20120238103A1 METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS 有权
标题翻译：金属和金属氧化物膜的蚀刻方法
公开(公告)号：US20120238103A1
公开(公告)日：2012-09-20
申请号：US13416223
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32422 , H01L21/31122 , H01L21/32136
摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟气体在等离子体产生区域中产生等离子体。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

5. 发明申请

US20120009796A1 POST-ASH SIDEWALL HEALING 审中-公开
标题翻译：后腰围护理
公开(公告)号：US20120009796A1
公开(公告)日：2012-01-12
申请号：US12909167
申请日：2010-10-21
申请人： Zhenjiang Cui , Anchuan Wang , Mehul Naik , Nitin Ingle , Young Lee , Shankar Venkataraman
发明人： Zhenjiang Cui , Anchuan Wang , Mehul Naik , Nitin Ingle , Young Lee , Shankar Venkataraman
IPC分类号： H01L21/3065
CPC分类号： H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/76814
摘要： Methods of decreasing the effective dielectric constant present between two conducting components of an integrated circuit are described. The methods involve the use of a gas phase etch which is selective towards the oxygen-rich portion of the low-K dielectric layer. The etch rate attenuates as the etch process passes through the relatively high-K oxygen-rich portion and reaches the low-K portion. The etch process may be easily timed since the gas phase etch process does not readily remove the desirable low-K portion.
摘要翻译：描述了降低集成电路的两个导电部件之间存在的有效介电常数的方法。该方法包括使用对低K电介质层的富氧部分具有选择性的气相蚀刻。当蚀刻工艺通过较高K富氧部分并达到低K部分时，蚀刻速率衰减。由于气相蚀刻工艺不容易除去所需的低K部分，所以蚀刻工艺可以容易地定时。

6. 发明授权

US08765573B2 Air gap formation 有权
标题翻译：气隙形成
公开(公告)号：US08765573B2
公开(公告)日：2014-07-01
申请号：US13229673
申请日：2011-09-10
申请人： Abhijit Basu Mallick , Nitin Ingle
发明人： Abhijit Basu Mallick , Nitin Ingle
IPC分类号： H01L21/00 , H01L21/768 , H01L21/02 , H01L21/764
CPC分类号： H01L21/764 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/7682 , H01L21/76837 , H01L2221/1047
摘要： A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.
摘要翻译：在衬底上的相邻凸起特征之间形成气隙的方法包括使用可流动沉积工艺在相邻凸起特征之间的底部区域中形成含碳材料。该方法还包括使用可流动的沉积工艺在含碳材料上形成含硅膜，其中含硅膜填充相邻凸起特征之间的上部区域并在相邻的凸起特征上延伸。该方法还包括在升高的温度下将含碳材料和含硅材料固化一段时间，以形成相邻凸起特征之间的气隙。

7. 发明申请

US20070281496A1 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 有权
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：US20070281496A1
公开(公告)日：2007-12-06
申请号：US11754440
申请日：2007-05-29
申请人： Nitin Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
发明人： Nitin Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
IPC分类号： H01L21/31
CPC分类号： C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/31612
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。所述方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，以及将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

8. 发明申请

US20060148273A1 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 有权
公开(公告)号：US20060148273A1
公开(公告)日：2006-07-06
申请号：US11367866
申请日：2006-03-03
申请人： Nitin Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

9. 发明申请

US20060046427A1 Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials 有权
标题翻译：在含硅介电材料的形成中引入含羟基的前体的间隙填充沉积
公开(公告)号：US20060046427A1
公开(公告)日：2006-03-02
申请号：US11213612
申请日：2005-08-26
申请人： Nitin Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won Bang , Yen-Kun Wang
发明人： Nitin Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won Bang , Yen-Kun Wang
IPC分类号： H01L21/76
CPC分类号： H01L21/76837 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/31625 , H01L21/76224
摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
摘要翻译：一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

10. 发明申请

US20050255667A1 Method of inducing stresses in the channel region of a transistor 失效
标题翻译：在晶体管的沟道区域中产生应力的方法
公开(公告)号：US20050255667A1
公开(公告)日：2005-11-17
申请号：US10846734
申请日：2004-05-14
申请人： Reza Arghavani , Zheng Yuan , Ellie Yieh , Shankar Venkataraman , Nitin Ingle
发明人： Reza Arghavani , Zheng Yuan , Ellie Yieh , Shankar Venkataraman , Nitin Ingle
IPC分类号： H01L21/336 , H01L21/76 , H01L21/8238 , H01L29/00 , H01L29/78
CPC分类号： H01L29/6656 , H01L21/823807 , H01L29/6659 , H01L29/7833 , H01L29/7846
摘要： A method of fabricating a semiconductor device, where the method includes forming on a transistor on a substrate, where the transistor includes a channel region configured to conduct charge between a source region and a drain region, forming a trench adjacent to the transistor, depositing a material on the substrate and within the trench, and annealing the material, where the material is tensile following the annealing and creates a tensile stress in the channel region. Also, a method of forming a trench isolation in a semiconductor device, where the method includes forming a trench in a substrate, forming a material within the trench at a lower deposition rate, forming the material on the substrate at a higher deposition rate after the depositing of the material within the trench, and annealing the material, where after the annealing the material in the trench is tensile.
摘要翻译：一种制造半导体器件的方法，其中所述方法包括在衬底上的晶体管上形成晶体管，其中所述晶体管包括被配置为在源极区域和漏极区域之间导电的沟道区域，形成与所述晶体管相邻的沟槽，材料在衬底上并在沟槽内，并退火材料，其中材料在退火之后是拉伸的，并且在沟道区域中产生拉伸应力。另外，在半导体器件中形成沟槽隔离的方法，其中所述方法包括在衬底中形成沟槽，以较低的沉积速率在沟槽内形成材料，在衬底上以更高的沉积速率在衬底上形成材料在沟槽内沉积材料并退火材料，其中在退火之后，沟槽中的材料是拉伸的。

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