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1. 发明授权

US08808563B2 Selective etch of silicon by way of metastable hydrogen termination 有权
标题翻译：通过亚稳态氢终止法选择性蚀刻硅
公开(公告)号：US08808563B2
公开(公告)日：2014-08-19
申请号：US13439079
申请日：2012-04-04
申请人： Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： B44C1/22 , H01L21/3065 , H01J37/32 , H01L21/3213
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/3081 , H01L21/32137
摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

2. 发明申请

US20130045605A1 DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS 审中-公开
标题翻译：含氮和含氮薄膜的干燥剂
公开(公告)号：US20130045605A1
公开(公告)日：2013-02-21
申请号：US13448541
申请日：2012-04-17
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域中选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。含氮和氮的材料的选择性部分取决于位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

3. 发明申请

US20120238102A1 METHODS FOR ETCH OF SIN FILMS 有权
标题翻译：方法用于刻蚀薄膜
公开(公告)号：US20120238102A1
公开(公告)日：2012-09-20
申请号：US13416277
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体在等离子体产生区域中。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

4. 发明授权

US09324576B2 Selective etch for silicon films 有权
标题翻译：硅膜的选择性蚀刻
公开(公告)号：US09324576B2
公开(公告)日：2016-04-26
申请号：US13088930
申请日：2011-04-18
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , H01L21/3213 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/32137 , H01L21/3065 , H01L21/311 , H01L21/31116 , H01L21/32136
摘要： A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen.
摘要翻译：描述了蚀刻图案化异质含硅结构的方法，并且包括与现有远程等离子体蚀刻相比具有反向选择性的远程等离子体蚀刻。这些方法可用于在少量或不含氧化硅的同时去除多晶硅。更一般地，含有较少氧的含硅膜比含有更多氧的含硅膜更快地除去。其他示例性应用包括修整硅碳氮化物膜，同时基本上保留碳氧化硅。诸如这些的应用由本文提供的方法实现，并且实现了新的工艺流程。预期这些工艺流程对于各种更细的线宽结构是理想的。本文包含的方法也可以用于比含有较高氮浓度的含氮和硅的膜更快地蚀刻含硅膜。

5. 发明授权

US08679983B2 Selective suppression of dry-etch rate of materials containing both silicon and nitrogen 失效
标题翻译：选择性抑制含有硅和氮的材料的干蚀刻速率
公开(公告)号：US08679983B2
公开(公告)日：2014-03-25
申请号：US13449441
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

6. 发明授权

US08679982B2 Selective suppression of dry-etch rate of materials containing both silicon and oxygen 有权
标题翻译：选择性抑制含有硅和氧的材料的干蚀刻速率
公开(公告)号：US08679982B2
公开(公告)日：2014-03-25
申请号：US13449543
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/3065 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该技术提高其选择性的材料的实例包括氮化硅和硅。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

7. 发明授权

US09064815B2 Methods for etch of metal and metal-oxide films 有权
标题翻译：金属和金属氧化物膜的蚀刻方法
公开(公告)号：US09064815B2
公开(公告)日：2015-06-23
申请号：US13416223
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461 , H01L21/311 , H01J37/32 , H01L21/3213
CPC分类号： H01L21/31116 , H01J37/32422 , H01L21/31122 , H01L21/32136
摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟气体在等离子体产生区域中产生等离子体。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

8. 发明授权

US08771539B2 Remotely-excited fluorine and water vapor etch 有权
标题翻译：远程激发氟和水蒸汽蚀刻
公开(公告)号：US08771539B2
公开(公告)日：2014-07-08
申请号：US13232079
申请日：2011-09-14
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
IPC分类号： C23F1/00 , H01L21/311 , H01J37/32 , H01L49/02
CPC分类号： H01L21/31116 , H01J37/32357 , H01L28/91
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.
摘要翻译：描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。由组合产生的化学反应产生反应物，其蚀刻图案化的异质结构，以在实施方案中产生几乎没有变形的薄的残余结构。这些方法可以用于保守地修整氧化硅，同时去除很少或没有硅，多晶硅，氮化硅，钛或氮化钛。在示例性实施例中，已经发现本文所述的蚀刻工艺是在薄的圆柱形导电结构周围除去模制氧化物，而不会导致圆柱形结构显着变形。

9. 发明申请

US20130059440A1 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN 失效
标题翻译：选择性抑制含有硅和氮的材料的干燥速率
公开(公告)号：US20130059440A1
公开(公告)日：2013-03-07
申请号：US13449441
申请日：2012-04-18
申请人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
发明人： Yunyu Wang , Anchuan Wang , Jingchun Zhang , Nitin K. Ingle , Young S. Lee
IPC分类号： H01L21/311
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

10. 发明申请

US20120211462A1 REMOTELY-EXCITED FLUORINE AND WATER VAPOR ETCH 有权
标题翻译：远程激光和水蒸气蚀刻
公开(公告)号：US20120211462A1
公开(公告)日：2012-08-23
申请号：US13232079
申请日：2011-09-14
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle
IPC分类号： C23F1/02
CPC分类号： H01L21/31116 , H01J37/32357 , H01L28/91
摘要： A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform.
摘要翻译：描述了在图案化异质结构上蚀刻暴露的氧化硅的方法，并且包括由含氟前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与水蒸汽结合。由组合产生的化学反应产生反应物，其蚀刻图案化的异质结构，以在实施方案中产生几乎没有变形的薄的残余结构。这些方法可以用于保守地修整氧化硅，同时去除很少或没有硅，多晶硅，氮化硅，钛或氮化钛。在示例性实施例中，已经发现本文所述的蚀刻工艺是在薄的圆柱形导电结构周围除去模制氧化物，而不会导致圆柱形结构显着变形。

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