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    • 2. 发明授权
    • Thin-film forming apparatus and thin-film forming method
    • 薄膜形成装置和薄膜形成方法
    • US06723660B1
    • 2004-04-20
    • US09528452
    • 2000-03-17
    • Arichika Ishida
    • Arichika Ishida
    • H01L2131
    • C23C16/509C23C16/45557
    • A thin-film forming apparatus of the present invention is capable of reducing variation of film formation rate and forming thin films of a stable thickness. The thin-film forming apparatus can prevent decrease of the film formation rate due to raise of temperatures of an RF electrode and an inner wall of a reaction chamber, by supplying a pressure control gas of a predetermined pressure into the reaction chamber also in non-film formation time to keep a gas pressure in the reaction chamber constant. Thereby, thickness of a film grown on a substrate can be controlled to a constant thickness. Further, by heating the pressure control gas to raise its temperature to a value approximately equal to a temperature of a material gas, variation of the pressure of the gas in the reaction chamber is controlled and the temperatures of the inner wall of the reaction chamber and the RF electrode are kept constant. Thereby, since the film formation rate on the inner wall of the reaction chamber and a surface of the RF electrode are kept constant, the quantity of the material gas substantially supplied to the surface of the substrate is kept constant. Thereby, the film formation rate on the surface of the substrate can be kept constant.
    • 本发明的薄膜形成装置能够减小成膜速度的变化并形成稳定厚度的薄膜。 薄膜形成装置可以通过在非反应室中将预定压力的压力控制气体供应到反应室中来防止由于RF电极和反应室的内壁的温度升高引起的膜形成速率的降低, 保持反应室中的气体压力恒定的成膜时间。 由此,可以将在基板上生长的膜的厚度控制为一定的厚度。 此外,通过加热压力控制气体将其温度升高到大致等于原料气体的温度的值,控制反应室中的气体压力的变化,并且反应室的内壁和 RF电极保持恒定。 因此,由于反应室的内壁和RF电极的表面的成膜速度保持恒定,所以基本上供给到基板表面的原料气体的量保持恒定。 由此,能够使基板表面的成膜速度保持恒定。