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1. 发明申请

US20070063228A1 Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，半导体器件，显示器，结晶方法和制造薄膜晶体管的方法
公开(公告)号：US20070063228A1
公开(公告)日：2007-03-22
申请号：US11432387
申请日：2006-05-12
申请人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
发明人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
IPC分类号： H01L27/148 , H01L29/768 , H01L29/74
CPC分类号： H01L29/78621 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.
摘要翻译：本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

2. 发明申请

US20070001949A1 Protective circuit for a thin film transistor and a liquid crystal display device 审中-公开
标题翻译：薄膜晶体管和液晶显示装置的保护电路
公开(公告)号：US20070001949A1
公开(公告)日：2007-01-04
申请号：US11514759
申请日：2006-09-01
申请人： Yoshiaki Nakazaki
发明人： Yoshiaki Nakazaki
IPC分类号： G09G3/36
CPC分类号： H01L27/1214 , G02F1/136204 , G09G5/006 , H01L2924/0002 , H01L2924/00
摘要： An input-output (I/O) protective circuit having more stable I/O protective function for use in the liquid crystal display device and including in one embodiment a resistance provided between an I/O terminal pad and an I/O primary stage thin film transistor, a wiring connecting the I/O terminal pad with the resistance, and two I/O protective thin film transistors connected in series between a ground terminal and a power source terminal. The above wiring is connected with each joint portion of the two I/O protective thin film transistors and, each of the two I/O protective thin film transistors has p-type substrate potential fixing terminals and n-type substrate potential fixing terminals, which are connected with each of the channel layers of the I/O protective thin film transistors, and p-type substrate potential fixing terminals and n-type substrate potential fixing terminals are connected with the ground terminals.
摘要翻译：一种输入输出（I / O）保护电路，其具有用于液晶显示装置的更稳定的I / O保护功能，并且在一个实施例中包括在I / O端子焊盘和I / O初级薄层之间提供的电阻薄膜晶体管，将I / O端子焊盘与电阻连接的布线以及串联在接地端子和电源端子之间的两个I / O保护薄膜晶体管。上述布线与两个I / O保护薄膜晶体管的每个接合部分连接，并且两个I / O保护薄膜晶体管中的每一个具有p型衬底电位固定端子和n型衬底电势固定端子，其中与I / O保护薄膜晶体管的每个沟道层连接，p型衬底电位固定端子和n型衬底电位固定端子与接地端子连接。

3. 发明授权

US07485505B2 Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors 失效
标题翻译：薄膜晶体管，薄膜晶体管的制造方法以及使用薄膜晶体管的显示器
公开(公告)号：US07485505B2
公开(公告)日：2009-02-03
申请号：US11855755
申请日：2007-09-14
申请人： Yoshiaki Nakazaki , Genshiro Kawachi , Terunori Warabisako , Masakiyo Matsumura
发明人： Yoshiaki Nakazaki , Genshiro Kawachi , Terunori Warabisako , Masakiyo Matsumura
IPC分类号： H01L21/84
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.
摘要翻译：本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

4. 发明申请

US20050212063A1 Thin-film transistor formed on insulating substrate 失效
标题翻译：绝缘基板上形成薄膜晶体管
公开(公告)号：US20050212063A1
公开(公告)日：2005-09-29
申请号：US11085111
申请日：2005-03-22
申请人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
发明人： Fumiki Nakano , Genshiro Kawachi , Yoshiaki Nakazaki , Shinzo Tsuboi , Takahiko Endo , Tomoya Kato
IPC分类号： H01L21/336 , H01L21/77 , H01L21/8236 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L27/1296 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78696
摘要： There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要翻译：提供一种薄膜晶体管，其形成在绝缘基板上，能够进行高速运转，器件之间的不均匀性较小，几乎不易受高电压造成的器件破坏，并且不受影响形成在Si岛的边缘部分的寄生晶体管。薄膜半导体器件使用设置在绝缘基板上的薄膜半导体形成，并且包括用于形成漏极电流流过的沟道区域的栅极区域。栅极区域在绝缘基板上具有平面的环形形状。高浓度杂质掺杂区被分割地设置在环形栅极区域的内部和外部，并且沟道区域由多个扇形半导体单晶部分形成。

5. 发明授权

US07742015B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US07742015B2
公开(公告)日：2010-06-22
申请号：US11544563
申请日：2006-10-10
申请人： Masahiro Tada , Yoshiaki Nakazaki , Akihiko Saitoh , Hiroyuki Kimura , Shinichi Hirota
发明人： Masahiro Tada , Yoshiaki Nakazaki , Akihiko Saitoh , Hiroyuki Kimura , Shinichi Hirota
IPC分类号： G09G3/18
CPC分类号： G09G3/3696 , G09G2300/0809 , G09G2320/0223
摘要： In order to prevent a gradation shift due to variations in the thickness of a film used to form an auxiliary capacitor, a detection capacitor having a layer structure similar to that of the auxiliary capacitor placed for each pixel is provided on an array substrate. Furthermore, the capacitor value of the detection capacitor as a representative of the plurality of auxiliary capacitors is detected, and the potential amplitude ΔVcs of a power supply line connected to the auxiliary capacitor is adjusted based on this detected value.
摘要翻译：为了防止由于用于形成辅助电容器的膜的厚度的变化引起的灰度偏移，具有与为每个像素设置的辅助电容器类似的层结构的检测电容器设置在阵列基板上。此外，检测作为多个辅助电容器的代表的检测电容器的电容器值，并且基于该检测值来调整连接到辅助电容器的电源线的电位振幅＆Dgr; Vcs。

6. 发明授权

US07335910B2 Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor 有权
标题翻译：薄膜晶体管，半导体器件，显示器，结晶方法和制造薄膜晶体管的方法
公开(公告)号：US07335910B2
公开(公告)日：2008-02-26
申请号：US11432387
申请日：2006-05-12
申请人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
发明人： Tomoya Kato , Masakiyo Matsumura , Yoshiaki Nakazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L29/00
CPC分类号： H01L29/78621 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.
摘要翻译：本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

7. 发明申请

US20070026619A1 THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR, AND DISPLAY USING THIN-FILM TRANSISTORS 失效
标题翻译：薄膜晶体管，制造薄膜晶体管的方法和使用薄膜晶体管的显示
公开(公告)号：US20070026619A1
公开(公告)日：2007-02-01
申请号：US11428477
申请日：2006-07-03
申请人： Yoshiaki NAKAZAKI , Genshiro KAWACHI , Terunori WARABISAKO , Masakiyo MATSUMURA
发明人： Yoshiaki NAKAZAKI , Genshiro KAWACHI , Terunori WARABISAKO , Masakiyo MATSUMURA
IPC分类号： H01L21/336 , H01L21/00 , H01L21/84
CPC分类号： H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675 , H01L29/78696
摘要： The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.
摘要翻译：本发明提供了提供更高电子（或空穴）迁移率的薄膜晶体管，薄膜晶体管的制造方法和使用该薄膜晶体管的显示器。本发明提供一种具有在水平方向上生长的晶体的半导体薄膜中的源极区，沟道区和漏极区的薄膜晶体管，该薄膜晶体管具有栅极绝缘膜和栅电极在沟道区域上形成漏极区的与沟道区相邻的漏极边缘在晶体生长终点附近。

8. 发明授权

US07138987B2 Protection circuit for input and output of liquid crystal display 失效
标题翻译：液晶显示器输入输出保护电路
公开(公告)号：US07138987B2
公开(公告)日：2006-11-21
申请号：US10401311
申请日：2003-03-26
申请人： Yoshiaki Nakazaki
发明人： Yoshiaki Nakazaki
IPC分类号： H01L23/62
CPC分类号： H01L27/1214 , G02F1/136204 , G09G5/006 , H01L2924/0002 , H01L2924/00
摘要： There is provided an input-output (I/O) protective circuit having more stable I/O protective function for use in the liquid crystal display device.An IO protective circuit includes: a resistance 13 provided between an I/O terminal pad 11 and an I/O primary stage thin film transistor 12, a wiring connecting the I/O terminal pad 11 with the resistance 13, and two I/O protective thin film transistors 14 connected in series between a ground terminal 20 and a power source terminal 21. The above wiring is connected with each joint portion of the two I/O protective thin film transistors 14 and 15, each of the two I/O protective thin film transistors 14, 15 has p-type substrate potential fixing terminals 16, 18 and n-type substrate potential fixing terminals 17, 19, which are connected with each of the channel layers of the I/O protective thin film transistors 14, 15, and p-type substrate potential fixing terminals 16, 18 and n-type substrate potential fixing terminals 17, 19 are connected with the ground terminals 20.
摘要翻译：提供了一种具有更稳定的I / O保护功能的输入输出（I / O）保护电路，用于液晶显示装置。 IO保护电路包括：设置在I / O端子焊盘11和I / O初级级薄膜晶体管12之间的电阻13，将I / O端子焊盘11与电阻13连接的布线和两个I / O 保护薄膜晶体管14串联连接在接地端子20和电源端子21之间。上述布线与两个I / O保护薄膜晶体管14和15的每个接合部分连接，两个I / O保护薄膜晶体管14,15中的每一个具有p型衬底电位固定端子16,18和n I型衬底电位固定端子17,19与I / O保护薄膜晶体管14,15的各个沟道层和p型衬底电位固定端子16,18连接，n型衬底电位固定端子17,19与接地端子20连接。

9. 发明授权

US08085355B2 Structure of thin film transistors and liquid crystal display device having the same 有权
标题翻译：薄膜晶体管的结构和具有该薄膜晶体管的液晶显示装置
公开(公告)号：US08085355B2
公开(公告)日：2011-12-27
申请号：US12547340
申请日：2009-08-25
申请人： Hajime Watakabe , Masato Hiramatsu , Toshiya Kiyota , Mikio Murata , Masaki Kado , Arichika Ishida , Yoshiaki Nakazaki
发明人： Hajime Watakabe , Masato Hiramatsu , Toshiya Kiyota , Mikio Murata , Masaki Kado , Arichika Ishida , Yoshiaki Nakazaki
IPC分类号： G02F1/136
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L29/42384
摘要： A structure of a plurality of thin film transistors wherein a peripheral circuit on a glass substrate of a liquid crystal display panel; and each of polycrystalline silicon thin film 13 of the thin film transistor is formed on the glass substrate; and each of gate electrode 15 is formed on a gate insulation layer, and each of the gate electrode 15 is overhead corresponding to the polycrystalline silicon thin film 13 for a channel; wherein the gate electrode 15 is comprised a pair of projection part 15A and a gate-channel 15B; and wherein the pair of projection part 15A is formed the both sides of the gate-channel 15B in which the side is for along the channel-direction, and wherein the pair of projection part 15A is enlarged for across the channel-direction.
摘要翻译：多个薄膜晶体管的结构，其中液晶显示面板的玻璃基板上的外围电路; 并且在玻璃基板上形成薄膜晶体管的多晶硅薄膜13; 并且每个栅电极15形成在栅极绝缘层上，并且每个栅电极15对应于用于沟道的多晶硅薄膜13的顶部; 其中栅电极15包括一对突出部分15A和栅极通道15B; 并且其中所述一对突出部分15A形成在所述侧壁用于沿着所述通道方向的所述栅极通道15B的两侧，并且其中所述一对突出部分15A在所述通道方向上被扩大。

10. 发明申请

US20100110322A1 STRUCTURE OF THIN FILM TRANSISTORS AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME 有权
标题翻译：薄膜晶体管和液晶显示器件的结构
公开(公告)号：US20100110322A1
公开(公告)日：2010-05-06
申请号：US12547340
申请日：2009-08-25
申请人： Hajime WATAKABE , Masato Hiramatsu , Toshiya Kiyota , Mikio Murata , Masaki Kado , Arichika Ishida , Yoshiaki Nakazaki
发明人： Hajime WATAKABE , Masato Hiramatsu , Toshiya Kiyota , Mikio Murata , Masaki Kado , Arichika Ishida , Yoshiaki Nakazaki
IPC分类号： G02F1/1368 , H01L27/085 , H01L27/15
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L29/42384
摘要： A structure of a plurality of thin film transistors wherein a peripheral circuit on a glass substrate of a liquid crystal display panel; and each of polycrystalline silicon thin film 13 of the thin film transistor is formed on the glass substrate; and each of gate electrode 15 is formed on a gate insulation layer, and each of the gate electrode 15 is overhead corresponding to the polycrystalline silicon thin film 13 for a channel; wherein the gate electrode 15 is comprised a pair of projection part 15A and a gate-channel 15B; and wherein the pair of projection part 15A is formed the both sides of the gate-channel 15B in which the side is for along the channel-direction, and wherein the pair of projection part 15A is enlarged for across the channel-direction.
摘要翻译：多个薄膜晶体管的结构，其中液晶显示面板的玻璃基板上的外围电路; 并且在玻璃基板上形成薄膜晶体管的多晶硅薄膜13; 并且每个栅电极15形成在栅极绝缘层上，并且每个栅电极15对应于用于沟道的多晶硅薄膜13的顶部; 其中栅电极15包括一对突出部分15A和栅极通道15B; 并且其中所述一对突出部分15A形成在所述侧壁用于沿着所述通道方向的所述栅极通道15B的两侧，并且其中所述一对突出部分15A在所述通道方向上被扩大。

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