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1. 发明授权

US08085355B2 Structure of thin film transistors and liquid crystal display device having the same 有权
标题翻译：薄膜晶体管的结构和具有该薄膜晶体管的液晶显示装置
公开(公告)号：US08085355B2
公开(公告)日：2011-12-27
申请号：US12547340
申请日：2009-08-25
申请人： Hajime Watakabe , Masato Hiramatsu , Toshiya Kiyota , Mikio Murata , Masaki Kado , Arichika Ishida , Yoshiaki Nakazaki
发明人： Hajime Watakabe , Masato Hiramatsu , Toshiya Kiyota , Mikio Murata , Masaki Kado , Arichika Ishida , Yoshiaki Nakazaki
IPC分类号： G02F1/136
CPC分类号： H01L27/124 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L29/42384
摘要： A structure of a plurality of thin film transistors wherein a peripheral circuit on a glass substrate of a liquid crystal display panel; and each of polycrystalline silicon thin film 13 of the thin film transistor is formed on the glass substrate; and each of gate electrode 15 is formed on a gate insulation layer, and each of the gate electrode 15 is overhead corresponding to the polycrystalline silicon thin film 13 for a channel; wherein the gate electrode 15 is comprised a pair of projection part 15A and a gate-channel 15B; and wherein the pair of projection part 15A is formed the both sides of the gate-channel 15B in which the side is for along the channel-direction, and wherein the pair of projection part 15A is enlarged for across the channel-direction.
摘要翻译：多个薄膜晶体管的结构，其中液晶显示面板的玻璃基板上的外围电路; 并且在玻璃基板上形成薄膜晶体管的多晶硅薄膜13; 并且每个栅电极15形成在栅极绝缘层上，并且每个栅电极15对应于用于沟道的多晶硅薄膜13的顶部; 其中栅电极15包括一对突出部分15A和栅极通道15B; 并且其中所述一对突出部分15A形成在所述侧壁用于沿着所述通道方向的所述栅极通道15B的两侧，并且其中所述一对突出部分15A在所述通道方向上被扩大。

2. 发明授权

US09001291B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US09001291B2
公开(公告)日：2015-04-07
申请号：US13357196
申请日：2012-01-24
申请人： Hajime Watakabe , Arichika Ishida , Masato Hiramatsu
发明人： Hajime Watakabe , Arichika Ishida , Masato Hiramatsu
IPC分类号： G02F1/1335 , G02F1/1362
CPC分类号： G09G5/02 , G02F1/133514 , G02F1/136209 , G02F2001/133521 , G02F2001/136222 , G02F2201/346 , G02F2202/104 , G09G3/3607
摘要： According to one embodiment, a liquid crystal display device includes an array substrate including a first color filter configured to transmit light in a first wavelength range, a second color filter configured to transmit light in a second wavelength range of greater wavelengths than the first wavelength range, a first switching element disposed above the second color filter, a second switching element disposed above the second color filter, a first pixel electrode which is electrically connected to the first switching element and is located above the first color filter, and a second pixel electrode which is electrically connected to the second switching element and is located above the second color filter.
摘要翻译：根据一个实施例，液晶显示装置包括阵列基板，该阵列基板包括被配置为透射第一波长范围的光的第一滤色器，配置成透射比第一波长范围更大波长的第二波长范围的光的第二滤色器设置在第二滤色器上方的第一开关元件，设置在第二滤色器上方的第二开关元件，与第一开关元件电连接并位于第一滤色器上方的第一像素电极，以及第二像素电极其电连接到第二开关元件并且位于第二滤色器的上方。

3. 发明申请

US20130021550A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
公开(公告)号：US20130021550A1
公开(公告)日：2013-01-24
申请号：US13357196
申请日：2012-01-24
申请人： Hajime Watakabe , Arichika Ishida , Masato Hiramatsu
发明人： Hajime Watakabe , Arichika Ishida , Masato Hiramatsu
IPC分类号： G02F1/1335 , G02F1/13357 , G02F1/1368
CPC分类号： G09G5/02 , G02F1/133514 , G02F1/136209 , G02F2001/133521 , G02F2001/136222 , G02F2201/346 , G02F2202/104 , G09G3/3607
摘要： According to one embodiment, a liquid crystal display device includes an array substrate including a first color filter configured to transmit light in a first wavelength range, a second color filter configured to transmit light in a second wavelength range of greater wavelengths than the first wavelength range, a first switching element disposed above the second color filter, a second switching element disposed above the second color filter, a first pixel electrode which is electrically connected to the first switching element and is located above the first color filter, and a second pixel electrode which is electrically connected to the second switching element and is located above the second color filter.

4. 发明申请

US20120199827A1 THIN-FILM TRANSISTOR CIRCUIT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管电路基板及其制造方法
公开(公告)号：US20120199827A1
公开(公告)日：2012-08-09
申请号：US13329545
申请日：2011-12-19
申请人： Tetsuya Shibata , Hajime Watakabe , Atsushi Sasaki , Yuki Matsuura , Muneharu Akiyoshi , Hiroyuki Watanabe
发明人： Tetsuya Shibata , Hajime Watakabe , Atsushi Sasaki , Yuki Matsuura , Muneharu Akiyoshi , Hiroyuki Watanabe
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode.
摘要翻译：根据一个实施例，制造薄膜晶体管电路衬底的方法包括在绝缘衬底上形成氧化物半导体薄膜，形成栅极绝缘膜和栅电极，所述栅极绝缘膜和栅电极层叠在氧化物半导体薄膜的第一区域上并且从所述栅极绝缘膜暴露所述氧化物半导体薄膜的第二区域和第三区域，所述第二区域和所述第三区域位于所述氧化物半导体薄膜的所述第一区域的两侧，形成层间绝缘膜包括硅的悬挂键，覆盖第二区域的层间绝缘膜和氧化物半导体薄膜的第三区域，栅极绝缘膜和栅电极，以及形成源电极和漏电极。

5. 发明申请

US20080018323A1 Apparatus for Measuring Electric Characteristics of Semiconductor 失效
标题翻译：用于测量半导体电气特性的装置
公开(公告)号：US20080018323A1
公开(公告)日：2008-01-24
申请号：US11661219
申请日：2005-08-25
申请人： Toshiyuki Samejima , Hajime Watakabe
发明人： Toshiyuki Samejima , Hajime Watakabe
IPC分类号： G01R31/26
CPC分类号： G01R31/2648 , H02S50/10
摘要： An apparatus for measuring electric characteristics of a semiconductor includes a light irradiating means for irradiating light to a characteristic measured semiconductor, an alternating-current voltage source, an electric potential measuring means and an impedance regulator wherein impedance is regulated by an impedance regulator in such a manner that electric potential at an electric potential measuring point of the characteristic measured semiconductor may become zero electric potential in the state in which light is not irradiated on the characteristic measured semiconductor by the light irradiating means. Electric characteristics of the characteristic measured semiconductor are measured based on measurement of electric potential obtained with or without irradiation of light onto the characteristic measured semiconductor. With this arrangement, semiconductor electric characteristics can be measured with high accuracy by a simple arrangement.
摘要翻译：用于测量半导体的电特性的装置包括用于将光照射到特性测量半导体的光照射装置，交流电压源，电位测量装置和阻抗调节器，其中阻抗由这样的阻抗调节器在光照射装置不对特征测量半导体照射光的状态下，特性测量半导体的电位测量点的电位可能变为零电位。基于特性测量半导体的光照射光电位的测定，测定特性测量半导体的电特性。利用这种布置，可以通过简单的布置以高精度测量半导体电特性。

6. 发明授权

US08710498B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08710498B2
公开(公告)日：2014-04-29
申请号：US13329545
申请日：2011-12-19
申请人： Tetsuya Shibata , Hajime Watakabe , Atsushi Sasaki , Yuki Matsuura , Muneharu Akiyoshi , Hiroyuki Watanabe
发明人： Tetsuya Shibata , Hajime Watakabe , Atsushi Sasaki , Yuki Matsuura , Muneharu Akiyoshi , Hiroyuki Watanabe
IPC分类号： H01L29/72
CPC分类号： H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode.
摘要翻译：根据一个实施例，制造薄膜晶体管电路衬底的方法包括在绝缘衬底上形成氧化物半导体薄膜，形成栅极绝缘膜和栅电极，所述栅极绝缘膜和栅电极层叠在氧化物半导体薄膜的第一区域上并且从所述栅极绝缘膜暴露所述氧化物半导体薄膜的第二区域和第三区域，所述第二区域和所述第三区域位于所述氧化物半导体薄膜的所述第一区域的两侧，形成层间绝缘膜包括硅的悬挂键，覆盖第二区域的层间绝缘膜和氧化物半导体薄膜的第三区域，栅极绝缘膜和栅电极，以及形成源电极和漏电极。

7. 发明授权

US07573271B2 Apparatus for measuring electric characteristics of semiconductor 失效
标题翻译：用于测量半导体电气特性的装置
公开(公告)号：US07573271B2
公开(公告)日：2009-08-11
申请号：US11661219
申请日：2005-08-25
申请人： Toshiyuki Samejima , Hajime Watakabe
发明人： Toshiyuki Samejima , Hajime Watakabe
IPC分类号： G01R31/00 , G01R31/302
CPC分类号： G01R31/2648 , H02S50/10
摘要： An apparatus for measuring electric characteristics of a semiconductor includes a light irradiating means for irradiating light to a characteristic measured semiconductor, an alternating-current voltage source, an electric potential measuring means and an impedance regulator wherein impedance is regulated by an impedance regulator in such a manner that electric potential at an electric potential measuring point of the characteristic measured semiconductor may become zero electric potential in the state in which light is not irradiated on the characteristic measured semiconductor by the light irradiating means. Electric characteristics of the characteristic measured semiconductor are measured based on measurement of electric potential obtained with or without irradiation of light onto the characteristic measured semiconductor. With this arrangement, semiconductor electric characteristics can be measured with high accuracy by a simple arrangement.
摘要翻译：用于测量半导体的电特性的装置包括用于将光照射到特性测量半导体的光照射装置，交流电压源，电位测量装置和阻抗调节器，其中阻抗由这样的阻抗调节器调节在光照射装置不对特征测量半导体照射光的状态下，特性测量半导体的电位测量点的电位可能变为零电位。基于特性测量半导体的光照射光电位的测定，测定特性测量半导体的电特性。利用这种布置，可以通过简单的布置以高精度测量半导体电特性。

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