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1. 发明授权

US08786841B2 Thin film temperature measurement using optical absorption edge wavelength 有权
标题翻译：使用光吸收边缘波长的薄膜温度测量
公开(公告)号：US08786841B2
公开(公告)日：2014-07-22
申请号：US13378788
申请日：2010-06-21
申请人： Darryl Barlett , Charles A. Taylor, II , Barry D. Wissman
发明人： Darryl Barlett , Charles A. Taylor, II , Barry D. Wissman
IPC分类号： G01N21/00 , G01N21/47
CPC分类号： H01L21/67248 , H01L22/12
摘要： A technique for determining the temperature of a sample including a semiconductor film 20 having a measurable optical absorption edge deposited on a transparent substrate 22 of material having no measurable optical absorption edge, such as a GaN film 20 deposited on an Al2O3 substrate 22 for blue and white LEDs. The temperature is determined in realtime as the film 20 grows and increases in thickness. A spectra based on the diffusely scattered light from the film 20 is produced at each incremental thickness. A reference division is performed on each spectra to correct for equipment artifacts. The thickness of the film 20 and an optical absorption edge wavelength value are determined from the spectra. The temperature of the film 20 is determined as a function of the optical absorption edge wavelength and the thickness of the film 20 using the spectra, a thickness calibration table, and a temperature calibration table.
摘要翻译：一种用于确定样品的温度的技术，其包括具有沉积在不具有可测量的光吸收边缘的材料的透明基板22上的可测量的光吸收边缘的半导体膜20，例如沉积在用于蓝色的Al 2 O 3衬底22上的GaN膜20，以及白色LED。当膜20生长并且厚度增加时，温度是实时测定的。在每个增量厚度下产生基于来自膜20的漫散射光的光谱。在每个光谱上执行参考分区以校正设备伪像。从光谱确定膜20的厚度和光吸收边缘波长值。使用光谱，厚度校准表和温度校准表，确定膜20的温度作为光吸收边缘波长和膜20的厚度的函数。

2. 发明申请

US20120133934A1 THIN FILM TEMPERATURE MEASUREMENT USING OPTICAL ABSORPTION EDGE WAVELENGTH 有权
标题翻译：使用光学吸收边缘波长的薄膜温度测量
公开(公告)号：US20120133934A1
公开(公告)日：2012-05-31
申请号：US13378788
申请日：2010-06-21
申请人： Darryl Barlett , Charles A. Taylor, II , Barry D. Wissman
发明人： Darryl Barlett , Charles A. Taylor, II , Barry D. Wissman
IPC分类号： G01J3/28 , G01J5/00
CPC分类号： H01L21/67248 , H01L22/12
摘要： A technique for determining the temperature of a sample including a semiconductor film 20 having a measurable optical absorption edge deposited on a transparent substrate 22 of material having no measurable optical absorption edge, such as a GaN film 20 deposited on an Al2O3 substrate 20 for blue and white LEDs. The temperature is determined in real-time as the film 20 grows and increases in thickness. A spectra based on the diffusely scattered light from the film 20 is produced at each incremental thickness. A reference division is performed on each spectra to correct for equipment artifacts. The thickness of the film 20 and an optical absorption edge wavelength value are determined from the spectra. The temperature of the film 20 is determined as a function of the optical absorption edge wavelength and the thickness of the film 20 using the spectra, a thickness calibration table, and a temperature calibration table.
摘要翻译：一种用于确定样品的温度的技术，包括沉积在不具有可测量的光吸收边缘的材料的透明基板22上的可测量的光吸收边缘的半导体膜20，例如沉积在用于蓝色的Al 2 O 3衬底20上的GaN膜20，以及白色LED。随着膜20的生长和厚度的增加，实时测定温度。在每个增量厚度下产生基于来自膜20的漫散射光的光谱。在每个光谱上执行参考分区以校正设备伪像。从光谱确定膜20的厚度和光吸收边缘波长值。使用光谱，厚度校准表和温度校准表，确定膜20的温度作为光吸收边缘波长和膜20的厚度的函数。

3. 发明授权

US07391523B1 Curvature/tilt metrology tool with closed loop feedback control 有权
标题翻译：具有闭环反馈控制的曲率/倾斜计量工具
公开(公告)号：US07391523B1
公开(公告)日：2008-06-24
申请号：US10858358
申请日：2004-06-01
申请人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke
发明人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke
IPC分类号： G01B11/24
CPC分类号： G01B11/2522
摘要： Apparatus for quantitatively measuring the curvature and/or relative tilt of large surfaces wherein a small array of parallel laser beams, each separated by a known distance, reflect from the surface of a sample and fall upon a feedback controlled front-surface steering mirror to a detector that measures both the change in separation of the reflected beams and the spatial translation of the entire array on the detector. The sample surface is translated beneath or in front of the fixed laser array by means of a computer controlled stage or other apparatus to create a 1-dimensional line scan or 2-dimensional map of both bow and relative tilt of the sample surface. A computer-driven, feedback-controlled steering mirror compensates for varying sample tilt by precisely realigning the reflected laser array onto the detector as the sample is translated. The apparatus also utilizes a laser with intensity feedback control to continuously optimize the reflected laser power for varying surface reflectivity as the sample is translated. This combination provides a means to quantitatively measure curvature and relative tilt of sample areas much larger than the actual laser beam array size.
摘要翻译：用于定量测量大表面的曲率和/或相对倾斜度的装置，其中每一个分开一段已知距离的平行激光束阵列从样品的表面反射并落在反馈控制的前表面导向镜上，检测器测量反射光束的分离变化和检测器上整个阵列的空间平移。样品表面借助于计算机控制级或其它装置在固定激光器阵列下方或前方平移，以产生样品表面的弓形和相对倾斜的一维线扫描或二维图。计算机驱动的反馈控制的转向镜通过在反射样本被翻译时将反射的激光器阵列精确地重新配置到检测器上来补偿不同的样品倾斜。该设备还利用具有强度反馈控制的激光器来连续优化反射激光功率，以在样品平移时改变表面反射率。该组合提供了一种用于定量测量样品区域的曲率和相对倾斜度的方法，该样品区域远大于实际的激光束阵列尺寸。

4. 发明授权

US07837383B2 Apparatus and method for real time measurement of substrate temperatures for use in semiconductor growth and wafer processing 有权
标题翻译：用于半导体生长和晶片处理的衬底温度的实时测量的装置和方法
公开(公告)号：US07837383B2
公开(公告)日：2010-11-23
申请号：US12104938
申请日：2008-04-17
申请人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
发明人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
IPC分类号： G01J5/58 , G01R31/265
CPC分类号： G01J5/0003 , C23C16/46 , C23C16/52 , G01J3/024 , G01J3/0286 , G01J3/0291 , G01J3/10 , G01J5/0007 , G01J5/0821 , G01J5/60
摘要： The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.
摘要翻译：本发明是用于在薄膜生长和晶片处理期间实时测量半导体衬底的温度的光学方法和装置。利用带间光吸收边缘对温度的近似线性依赖性，本方法和装置实时地实现了对扩散反射和透射几何形状的吸收边的高度精确测量，具有足够的精度和灵敏度以实现闭环温度控制的薄膜生长和加工中的晶片。该装置在涵盖普通半导体衬底的所有范围的宽范围的温度范围内工作。

5. 发明授权

US09239265B2 Apparatus and method for real time measurement of substrate temperatures for use in semiconductor growth and wafer processing 有权
标题翻译：用于半导体生长和晶片处理的衬底温度的实时测量的装置和方法
公开(公告)号：US09239265B2
公开(公告)日：2016-01-19
申请号：US12830810
申请日：2010-07-06
申请人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
发明人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
IPC分类号： G01J3/00 , G01J3/40 , G01J3/42 , G01J5/00 , G01J5/58 , C23C16/46 , C23C16/52 , G01J3/10 , G01J5/60 , G01J3/02 , G01J5/08
CPC分类号： G01J5/0003 , C23C16/46 , C23C16/52 , G01J3/024 , G01J3/0286 , G01J3/0291 , G01J3/10 , G01J5/0007 , G01J5/0821 , G01J5/60
摘要： The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.
摘要翻译：本发明是用于在薄膜生长和晶片处理期间实时测量半导体衬底的温度的光学方法和装置。利用带间光吸收边缘对温度的近似线性依赖性，本方法和装置实时地实现了对扩散反射和透射几何形状的吸收边的高度精确测量，具有足够的精度和灵敏度以实现闭环温度控制的薄膜生长和加工中的晶片。该装置在涵盖普通半导体衬底的所有范围的宽范围的温度范围内工作。

6. 发明申请

US20130321805A1 REAL-TIME TEMPERATURE, OPTICAL BAND GAP, FILM THICKNESS, AND SURFACE ROUGHNESS MEASUREMENT FOR THIN FILMS APPLIED TO TRANSPARENT SUBSTRATES 审中-公开
标题翻译：实时温度，光学带隙，薄膜厚度和表面粗糙度测量适用于透明基板的薄膜
公开(公告)号：US20130321805A1
公开(公告)日：2013-12-05
申请号：US13881194
申请日：2011-07-11
申请人： Darryl Barlett , Barry D. Wissman , Charles A Taylor, II
发明人： Darryl Barlett , Barry D. Wissman , Charles A Taylor, II
IPC分类号： G01B11/30 , G01B11/06
CPC分类号： G01B11/0625 , G01B11/0616 , G01B11/303 , G01N21/47 , G01N21/8422
摘要： A method and apparatus (20) used in connection with the manufacture of thin film semiconductor materials (26) deposited on generally transparent substrates (28), such as photovoltaic cells, for monitoring a property of the thin film (26), such as its temperature, surface roughness, thickness and/or optical absorption properties. A spectral curve (44) derived from diffusely scattered light (34, 34′) emanating from the film (26) reveals a characteristic optical absorption (Urbach) edge. Among other things, the absorption edge is useful to assess relative surface roughness conditions between discrete material samples (22) or different locations within the same material sample (22). By comparing the absorption edge qualities of two or more spectral curves, a qualitative assessment can be made to determine whether the surface roughness of the film (26) may be considered of good or poor quality.
摘要翻译：用于制造薄膜半导体材料（26）的方法和装置（20），该薄膜半导体材料沉积在诸如光伏电池的大体透明的基板（28）上，用于监测薄膜（26）的性质，例如其温度，表面粗糙度，厚度和/或光学吸收性能。衍射自从薄膜（26）发出的漫散射光（34,34'）的光谱曲线（44）显示特征光学吸收（Urbach）边缘。除其他之外，吸收边缘可用于评估在相同材料样品（22）内的离散材料样品（22）或不同位置之间的相对表面粗糙度条件。通过比较两个或更多个光谱曲线的吸收边缘质量，可以进行定性评估，以确定膜（26）的表面粗糙度是否可以被认为是好的或差的质量。

7. 发明申请

US20100274523A1 APPARATUS AND METHOD FOR REAL TIME MEASUREMENT OF SUBSTRATE TEMPERATURES FOR USE IN SEMICONDUCTOR GROWTH AND WAFER PROCESSING 有权
标题翻译：用于半导体生长和波浪加工的基板温度实时测量的装置和方法
公开(公告)号：US20100274523A1
公开(公告)日：2010-10-28
申请号：US12830810
申请日：2010-07-06
申请人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
发明人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
IPC分类号： G06F15/00 , G01K11/00
CPC分类号： G01J5/0003 , C23C16/46 , C23C16/52 , G01J3/024 , G01J3/0286 , G01J3/0291 , G01J3/10 , G01J5/0007 , G01J5/0821 , G01J5/60
摘要： The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.
摘要翻译：本发明是用于在薄膜生长和晶片处理期间实时测量半导体衬底的温度的光学方法和装置。利用带间光吸收边缘对温度的近似线性依赖性，本方法和装置实时地实现了对扩散反射和透射几何形状的吸收边的高度精确测量，具有足够的精度和灵敏度以实现闭环温度控制的薄膜生长和加工中的晶片。该装置在涵盖普通半导体衬底的所有范围的宽范围的温度范围内工作。

8. 发明申请

US20100246631A1 BLACKBODY FITTING FOR TEMPERATURE DETERMINATION 有权
标题翻译：用于温度测定的黑色配件
公开(公告)号：US20100246631A1
公开(公告)日：2010-09-30
申请号：US12730432
申请日：2010-03-24
申请人： Darryl Barlett , Barry D. Wissman , Charles A. Taylor, II
发明人： Darryl Barlett , Barry D. Wissman , Charles A. Taylor, II
IPC分类号： G01K15/00 , G06F19/00
CPC分类号： G01J5/522 , G01J5/02 , G01J5/026 , G01J5/60 , G01J2003/2866
摘要： A temperature monitoring technique for collecting radiation intensity (blackbody emission) across a broad wavelength range. A solid state spectrometer (26) acquires spectra from a sample (10) in real time and resolves the spectra to a radiation intensity (I) versus wavelength (λ) curve. This curve is fitted to Planck's equation using a non-linear least squares fitting analysis. The system can be configured to self-calibrate and then lock in an amplitude value (A) which is used in subsequent temperature measurements by fitting to the blackbody emission curve. Preferably, the spectrometer (26) is flat field corrected (36) in an initial step to counteract variations in the spectrometer response with wavelength.
摘要翻译：一种用于在宽波长范围内收集辐射强度（黑体发射）的温度监测技术。固态光谱仪（26）实时获取样品（10）的光谱，并将光谱解析为辐射强度（I）对波长（λ）曲线。该曲线使用非线性最小二乘拟合分析拟合到普朗克方程。该系统可以配置为自校准，然后锁定在随后的温度测量中使用的幅度值（A），通过拟合到黑体发射曲线。优选地，在初始步骤中，光谱仪（26）被平场校正（36），以抵消光谱仪响应波长的变化。

9. 发明申请

US20090177432A1 APPARATUS AND METHOD FOR REAL TIME MEASUREMENT OF SUBSTRATE TEMPERATURES FOR USE IN SEMICONDUCTOR GROWTH AND WAFER PROCESSING 有权
标题翻译：用于半导体生长和波浪加工的基板温度实时测量的装置和方法
公开(公告)号：US20090177432A1
公开(公告)日：2009-07-09
申请号：US12104938
申请日：2008-04-17
申请人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
发明人： Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
IPC分类号： G06F15/00 , G01J3/30
CPC分类号： G01J5/0003 , C23C16/46 , C23C16/52 , G01J3/024 , G01J3/0286 , G01J3/0291 , G01J3/10 , G01J5/0007 , G01J5/0821 , G01J5/60
摘要： The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.
摘要翻译：本发明是用于在薄膜生长和晶片处理期间实时测量半导体衬底的温度的光学方法和装置。利用带间光吸收边缘对温度的近似线性依赖性，本方法和装置实时地实现了对漫反射和透射几何形状的吸收边的高精度测量，具有足够的精度和灵敏度来实现闭环温度控制的薄膜生长和加工中的晶片。该装置在涵盖普通半导体衬底的所有范围的宽范围的温度范围内工作。

10. 发明授权

US08282273B2 Blackbody fitting for temperature determination 有权
标题翻译：黑体适合温度测定
公开(公告)号：US08282273B2
公开(公告)日：2012-10-09
申请号：US12730432
申请日：2010-03-24
申请人： Darryl Barlett , Barry D. Wissman , Charles A. Taylor, II
发明人： Darryl Barlett , Barry D. Wissman , Charles A. Taylor, II
IPC分类号： G01K15/00 , G01J5/00
CPC分类号： G01J5/522 , G01J5/02 , G01J5/026 , G01J5/60 , G01J2003/2866
摘要： A temperature monitoring technique for collecting radiation intensity (blackbody emission) across a broad wavelength range. A solid state spectrometer (26) acquires spectra from a sample (10) in real time and resolves the spectra to a radiation intensity (I) versus wavelength (λ) curve. This curve is fitted to Planck's equation using a non-linear least squares fitting analysis. The system can be configured to self-calibrate and then lock in an amplitude value (A) which is used in subsequent temperature measurements by fitting to the blackbody emission curve. Preferably, the spectrometer (26) is flat field corrected (36) in an initial step to counteract variations in the spectrometer response with wavelength.
摘要翻译：一种用于在宽波长范围内收集辐射强度（黑体发射）的温度监测技术。固态光谱仪（26）实时获取样品（10）的光谱，并将光谱解析为辐射强度（I）对波长（λ）曲线。该曲线使用非线性最小二乘拟合分析拟合到普朗克方程。该系统可以配置为自校准，然后锁定在随后的温度测量中使用的幅度值（A），通过拟合到黑体发射曲线。优选地，在初始步骤中，光谱仪（26）被平场校正（36），以抵消光谱仪响应波长的变化。

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