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1. 发明授权

US08786841B2 Thin film temperature measurement using optical absorption edge wavelength 有权
标题翻译：使用光吸收边缘波长的薄膜温度测量
公开(公告)号：US08786841B2
公开(公告)日：2014-07-22
申请号：US13378788
申请日：2010-06-21
申请人： Darryl Barlett , Charles A. Taylor, II , Barry D. Wissman
发明人： Darryl Barlett , Charles A. Taylor, II , Barry D. Wissman
IPC分类号： G01N21/00 , G01N21/47
CPC分类号： H01L21/67248 , H01L22/12
摘要： A technique for determining the temperature of a sample including a semiconductor film 20 having a measurable optical absorption edge deposited on a transparent substrate 22 of material having no measurable optical absorption edge, such as a GaN film 20 deposited on an Al2O3 substrate 22 for blue and white LEDs. The temperature is determined in realtime as the film 20 grows and increases in thickness. A spectra based on the diffusely scattered light from the film 20 is produced at each incremental thickness. A reference division is performed on each spectra to correct for equipment artifacts. The thickness of the film 20 and an optical absorption edge wavelength value are determined from the spectra. The temperature of the film 20 is determined as a function of the optical absorption edge wavelength and the thickness of the film 20 using the spectra, a thickness calibration table, and a temperature calibration table.
摘要翻译：一种用于确定样品的温度的技术，其包括具有沉积在不具有可测量的光吸收边缘的材料的透明基板22上的可测量的光吸收边缘的半导体膜20，例如沉积在用于蓝色的Al 2 O 3衬底22上的GaN膜20，以及白色LED。当膜20生长并且厚度增加时，温度是实时测定的。在每个增量厚度下产生基于来自膜20的漫散射光的光谱。在每个光谱上执行参考分区以校正设备伪像。从光谱确定膜20的厚度和光吸收边缘波长值。使用光谱，厚度校准表和温度校准表，确定膜20的温度作为光吸收边缘波长和膜20的厚度的函数。

2. 发明申请

US20120133934A1 THIN FILM TEMPERATURE MEASUREMENT USING OPTICAL ABSORPTION EDGE WAVELENGTH 有权
标题翻译：使用光学吸收边缘波长的薄膜温度测量
公开(公告)号：US20120133934A1
公开(公告)日：2012-05-31
申请号：US13378788
申请日：2010-06-21
申请人： Darryl Barlett , Charles A. Taylor, II , Barry D. Wissman
发明人： Darryl Barlett , Charles A. Taylor, II , Barry D. Wissman
IPC分类号： G01J3/28 , G01J5/00
CPC分类号： H01L21/67248 , H01L22/12
摘要： A technique for determining the temperature of a sample including a semiconductor film 20 having a measurable optical absorption edge deposited on a transparent substrate 22 of material having no measurable optical absorption edge, such as a GaN film 20 deposited on an Al2O3 substrate 20 for blue and white LEDs. The temperature is determined in real-time as the film 20 grows and increases in thickness. A spectra based on the diffusely scattered light from the film 20 is produced at each incremental thickness. A reference division is performed on each spectra to correct for equipment artifacts. The thickness of the film 20 and an optical absorption edge wavelength value are determined from the spectra. The temperature of the film 20 is determined as a function of the optical absorption edge wavelength and the thickness of the film 20 using the spectra, a thickness calibration table, and a temperature calibration table.
摘要翻译：一种用于确定样品的温度的技术，包括沉积在不具有可测量的光吸收边缘的材料的透明基板22上的可测量的光吸收边缘的半导体膜20，例如沉积在用于蓝色的Al 2 O 3衬底20上的GaN膜20，以及白色LED。随着膜20的生长和厚度的增加，实时测定温度。在每个增量厚度下产生基于来自膜20的漫散射光的光谱。在每个光谱上执行参考分区以校正设备伪像。从光谱确定膜20的厚度和光吸收边缘波长值。使用光谱，厚度校准表和温度校准表，确定膜20的温度作为光吸收边缘波长和膜20的厚度的函数。

3. 发明授权

US08282273B2 Blackbody fitting for temperature determination 有权
标题翻译：黑体适合温度测定
公开(公告)号：US08282273B2
公开(公告)日：2012-10-09
申请号：US12730432
申请日：2010-03-24
申请人： Darryl Barlett , Barry D. Wissman , Charles A. Taylor, II
发明人： Darryl Barlett , Barry D. Wissman , Charles A. Taylor, II
IPC分类号： G01K15/00 , G01J5/00
CPC分类号： G01J5/522 , G01J5/02 , G01J5/026 , G01J5/60 , G01J2003/2866
摘要： A temperature monitoring technique for collecting radiation intensity (blackbody emission) across a broad wavelength range. A solid state spectrometer (26) acquires spectra from a sample (10) in real time and resolves the spectra to a radiation intensity (I) versus wavelength (λ) curve. This curve is fitted to Planck's equation using a non-linear least squares fitting analysis. The system can be configured to self-calibrate and then lock in an amplitude value (A) which is used in subsequent temperature measurements by fitting to the blackbody emission curve. Preferably, the spectrometer (26) is flat field corrected (36) in an initial step to counteract variations in the spectrometer response with wavelength.
摘要翻译：一种用于在宽波长范围内收集辐射强度（黑体发射）的温度监测技术。固态光谱仪（26）实时获取样品（10）的光谱，并将光谱解析为辐射强度（I）对波长（λ）曲线。该曲线使用非线性最小二乘拟合分析拟合到普朗克方程。该系统可以配置为自校准，然后锁定在随后的温度测量中使用的幅度值（A），通过拟合到黑体发射曲线。优选地，在初始步骤中，光谱仪（26）被平场校正（36），以抵消光谱仪响应波长的变化。

4. 发明申请

US20130321805A1 REAL-TIME TEMPERATURE, OPTICAL BAND GAP, FILM THICKNESS, AND SURFACE ROUGHNESS MEASUREMENT FOR THIN FILMS APPLIED TO TRANSPARENT SUBSTRATES 审中-公开
标题翻译：实时温度，光学带隙，薄膜厚度和表面粗糙度测量适用于透明基板的薄膜
公开(公告)号：US20130321805A1
公开(公告)日：2013-12-05
申请号：US13881194
申请日：2011-07-11
申请人： Darryl Barlett , Barry D. Wissman , Charles A Taylor, II
发明人： Darryl Barlett , Barry D. Wissman , Charles A Taylor, II
IPC分类号： G01B11/30 , G01B11/06
CPC分类号： G01B11/0625 , G01B11/0616 , G01B11/303 , G01N21/47 , G01N21/8422
摘要： A method and apparatus (20) used in connection with the manufacture of thin film semiconductor materials (26) deposited on generally transparent substrates (28), such as photovoltaic cells, for monitoring a property of the thin film (26), such as its temperature, surface roughness, thickness and/or optical absorption properties. A spectral curve (44) derived from diffusely scattered light (34, 34′) emanating from the film (26) reveals a characteristic optical absorption (Urbach) edge. Among other things, the absorption edge is useful to assess relative surface roughness conditions between discrete material samples (22) or different locations within the same material sample (22). By comparing the absorption edge qualities of two or more spectral curves, a qualitative assessment can be made to determine whether the surface roughness of the film (26) may be considered of good or poor quality.
摘要翻译：用于制造薄膜半导体材料（26）的方法和装置（20），该薄膜半导体材料沉积在诸如光伏电池的大体透明的基板（28）上，用于监测薄膜（26）的性质，例如其温度，表面粗糙度，厚度和/或光学吸收性能。衍射自从薄膜（26）发出的漫散射光（34,34'）的光谱曲线（44）显示特征光学吸收（Urbach）边缘。除其他之外，吸收边缘可用于评估在相同材料样品（22）内的离散材料样品（22）或不同位置之间的相对表面粗糙度条件。通过比较两个或更多个光谱曲线的吸收边缘质量，可以进行定性评估，以确定膜（26）的表面粗糙度是否可以被认为是好的或差的质量。

5. 发明申请

US20100246631A1 BLACKBODY FITTING FOR TEMPERATURE DETERMINATION 有权
标题翻译：用于温度测定的黑色配件
公开(公告)号：US20100246631A1
公开(公告)日：2010-09-30
申请号：US12730432
申请日：2010-03-24
申请人： Darryl Barlett , Barry D. Wissman , Charles A. Taylor, II
发明人： Darryl Barlett , Barry D. Wissman , Charles A. Taylor, II
IPC分类号： G01K15/00 , G06F19/00
CPC分类号： G01J5/522 , G01J5/02 , G01J5/026 , G01J5/60 , G01J2003/2866
摘要： A temperature monitoring technique for collecting radiation intensity (blackbody emission) across a broad wavelength range. A solid state spectrometer (26) acquires spectra from a sample (10) in real time and resolves the spectra to a radiation intensity (I) versus wavelength (λ) curve. This curve is fitted to Planck's equation using a non-linear least squares fitting analysis. The system can be configured to self-calibrate and then lock in an amplitude value (A) which is used in subsequent temperature measurements by fitting to the blackbody emission curve. Preferably, the spectrometer (26) is flat field corrected (36) in an initial step to counteract variations in the spectrometer response with wavelength.
摘要翻译：一种用于在宽波长范围内收集辐射强度（黑体发射）的温度监测技术。固态光谱仪（26）实时获取样品（10）的光谱，并将光谱解析为辐射强度（I）对波长（λ）曲线。该曲线使用非线性最小二乘拟合分析拟合到普朗克方程。该系统可以配置为自校准，然后锁定在随后的温度测量中使用的幅度值（A），通过拟合到黑体发射曲线。优选地，在初始步骤中，光谱仪（26）被平场校正（36），以抵消光谱仪响应波长的变化。

6. 发明授权

US06362939B1 Balanced microactuator suspension 有权
标题翻译：平衡微致动器悬架
公开(公告)号：US06362939B1
公开(公告)日：2002-03-26
申请号：US09306581
申请日：1999-05-06
申请人： Peter Crane , Wayne A. Bonin , Barry D. Wissman , Barbara J. Ihlow-Mahrer
发明人： Peter Crane , Wayne A. Bonin , Barry D. Wissman , Barbara J. Ihlow-Mahrer
IPC分类号： G11B5596
CPC分类号： G11B5/5552
摘要： A microactuator suspension supports a slider. The microactuator suspension has at least a first resilient support extending from a slider attachment pad to a suspension arm attachment pad. The slider attachment pad forms a clip which contacts the slider on side faces of the slider, and the microactuator adds little or nothing to the vertical thickness of the head gimbal assembly. The suspension arm attachment pad attaches to the gimbal with an attachment bridge which is longitudinally balanced relative to the gimbal point and relative to the air bearing centroid of the slider. The resilient supports may be beams having ends which are longitudinally spaced relative to the gimbal point, to the air bearing centroid, and to the attachment bridge to minimize moments and localized stresses on the beams. Dual beam and multiple beam arrangements are provided.
摘要翻译：微型致动器悬架支撑滑块。微型致动器悬架至少具有从滑块附接垫延伸到悬挂臂附接垫的第一弹性支撑件。滑块附件垫形成一个与滑动件的滑动件接触的夹子，微型致动器对头部万向节组件的垂直厚度几乎没有补充。悬架臂附接垫通过连接桥连接到万向节，该连接桥相对于万向节并相对于滑块的空气轴承重心纵向平衡。弹性支撑件可以是具有相对于万向节，空气轴承重心纵向间隔开的端部以及连接桥，以最小化梁上的力矩和局部应力的梁。提供双光束和多光束布置。

7. 发明授权

US06733681B1 Laterally supported handle wafer for through-wafer reactive-ion etch micromachining 失效
标题翻译：用于通过晶片反应离子蚀刻微加工的侧面支撑的处理晶片
公开(公告)号：US06733681B1
公开(公告)日：2004-05-11
申请号：US09707698
申请日：2000-11-07
申请人： Roger L. Hipwell, Jr. , Lee Walter , Wayne A. Bonin , Barry D. Wissman , Zine-Eddine Boutaghou , Barbara J. Ihlow-Mahrer
发明人： Roger L. Hipwell, Jr. , Lee Walter , Wayne A. Bonin , Barry D. Wissman , Zine-Eddine Boutaghou , Barbara J. Ihlow-Mahrer
IPC分类号： B81C100
CPC分类号： B81C1/00357 , B81C2201/019 , Y10T29/49025
摘要： A method of handling a wafer for through-wafer plasma etching includes lateral support provided between a handle wafer and a product wafer without wafer bonding or an adhesive film using mating mechanical structures. The product wafer is easily separated from the handle wafer following etching without stripping or cleaning. Because the connection between the wafers is mechanical, not from an adhesive layer/bonded layer, a wafer can be etched, inspected, and subsequently continue to be etched without the hindrance of repeated bonding, separation, and cleaning. A non-bonded support for released devices following a through-etch process is also provided.
摘要翻译：用于晶圆等离子体蚀刻处理晶片的方法包括在晶片接合之间提供的手柄晶片和产品晶片之间的侧向支撑，或者使用配合机械结构的粘合膜。在没有剥离或清洁的情况下，产品晶片在蚀刻之后容易地与处理晶片分离。因为晶片之间的连接是机械的，而不是粘合层/接合层，所以可以蚀刻，检查晶片并且随后继续蚀刻晶片，而不会重复地进行接合，分离和清洁。还提供了在通过蚀刻工艺之后的释放器件的非接合支撑。

8. 发明授权

US08633552B1 ESD protection for MEMS resonator devices 有权
标题翻译： MEMS谐振器器件的ESD保护
公开(公告)号：US08633552B1
公开(公告)日：2014-01-21
申请号：US12041552
申请日：2008-03-03
申请人： Barry D. Wissman , Andrew R. Brown , John R. Clark
发明人： Barry D. Wissman , Andrew R. Brown , John R. Clark
IPC分类号： H01L29/84
CPC分类号： B81C1/00341 , H03H3/0072 , H03H9/02433
摘要： Disclosed herein are MEMS resonator device designs and fabrication techniques that provide protection against electrostatic charge imbalances. In one aspect, a MEMS resonator device includes a substrate, an electrode including a first microstructure supported by the substrate, a resonant element including a second microstructure spaced from the first microstructure by a gap for resonant displacement of the second microstructure within the gap during operation, and a disabled shunt coupled to the electrode or the resonant element. The disabled shunt is disabled to enable the resonant displacement but otherwise configured to protect against damage from an electrostatic charge imbalance before the operation of the MEMS resonator device.
摘要翻译：这里公开了提供防止静电电荷不平衡的保护的MEMS谐振器装置设计和制造技术。一方面，MEMS谐振器装置包括基板，包括由基板支撑的第一微结构的电极，包括与第一微结构间隔开的第二微结构的谐振元件，用于在操作期间间隙内的第二微结构在间隙内的共振位移以及耦合到电极或谐振元件的受阻分流。禁用的分路被禁止以启用谐振位移，但是另外被配置为在MEMS谐振器装置的操作之前防止静电电荷不平衡的损坏。

9. 发明授权

US06643099B1 Transducer formed on a sacrificial metal substrate 失效
标题翻译：传感器形成在牺牲金属基板上
公开(公告)号：US06643099B1
公开(公告)日：2003-11-04
申请号：US09728778
申请日：2000-12-01
申请人： Wayne A. Bonin , Zine-Eddine Boutaghou , Roger L. Hipwell, Jr. , Barry D. Wissman , Lee Walter
发明人： Wayne A. Bonin , Zine-Eddine Boutaghou , Roger L. Hipwell, Jr. , Barry D. Wissman , Lee Walter
IPC分类号： G11B560
CPC分类号： G11B5/6005 , G11B5/102 , G11B5/105 , G11B5/11 , G11B5/3103 , G11B5/3146 , G11B5/48 , H05K3/205 , H05K3/4007 , H05K2201/0367
摘要： A transducer assembly in which an electric current is passed through plating solution in recesses of a metal substrate to plate electrical contact bumps having bump fronts in the recesses and exposed bump backs. The transducer is partially formed on the substrate, sealing the exposed bump backs. One or more vacuum processes are performed to complete formation of the transducer. At least a portion of the metal substrate is etched away to expose the bump fronts of the electrical contact bumps.
摘要翻译：一种换能器组件，其中电流通过电镀溶液在金属基底的凹槽中，以在具有凸起前部的凹部和暴露的凸起背面中电镀接触凸块。传感器部分地形成在基板上，密封暴露的凸起背。执行一个或多个真空处理以完成换能器的形成。金属基板的至少一部分被蚀刻掉以露出电接触凸块的凸块前端。

10. 发明授权

US06387778B1 Breakable tethers for microelectromechanical system devices utilizing reactive ion etching lag 有权
标题翻译：用于使用反应离子蚀刻滞后的微机电系统装置的可破坏的系绳
公开(公告)号：US06387778B1
公开(公告)日：2002-05-14
申请号：US09649536
申请日：2000-08-28
申请人： Wayne A. Bonin , Zine-Eddine Boutaghou , Roger L. Hipwell, Jr. , Barry D. Wissman , Lee Walter , Barbara J. Ihlow-Mahrer
发明人： Wayne A. Bonin , Zine-Eddine Boutaghou , Roger L. Hipwell, Jr. , Barry D. Wissman , Lee Walter , Barbara J. Ihlow-Mahrer
IPC分类号： H01L21301
CPC分类号： B81C1/00873 , B81C2201/0132
摘要： Utilizing reactive ion etching (RIE) lag, tethers are fabricated that reliably hold devices in place during processing and storage, yet are easily broken to remove the parts from the wafer as desired, without requiring excessive force that could damage the devices. The tethers are fabricated by slightly narrowing the periphery etch feature at several places. By adjusting the ratio of the main periphery width to the necked width at the tethers, the final thickness of the tether can be controlled to a small fraction of the wafer thickness, so that tethers defined by readily achievable feature sizes will reliably hold the parts in place until removal is desired. Since the tethers are now only a fraction of the wafer thickness, they will reliably break to release the part at a force level that will not damage the part.
摘要翻译：利用反应离子蚀刻（RIE）滞后，制造了在加工和存储期间可靠地将装置保持在适当位置的系链，但是容易断裂以根据需要从晶片中除去部件，而不需要可能损坏装置的过大的力。系绳是通过在几个地方略微缩小周边蚀刻特征来制造的。通过调节主臂周边宽度与系绳颈缩宽度的比例，可以将系绳的最终厚度控制在晶片厚度的一小部分，从而可以容易地达到的特征尺寸所限定的系绳将可靠地保持在地方，直到需要去除。由于系绳现在只是晶片厚度的一部分，它们将可靠地断裂，以不会损坏零件的力水平释放零件。

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