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1. 发明授权

US09231158B2 Light-emitting diode structure with electrode pads of similar surface roughness and method for manufacturing the same 有权
标题翻译：具有类似表面粗糙度的电极焊盘的发光二极管结构及其制造方法
公开(公告)号：US09231158B2
公开(公告)日：2016-01-05
申请号：US13221908
申请日：2011-08-31
申请人： Cheng-Ta Kuo , Kuo-Hui Yu , Chao-Hsing Chen , Tsun-Kai Ko , Chi-Ming Huang , Shih-Wei Yen , Chien-Kai Chung
发明人： Cheng-Ta Kuo , Kuo-Hui Yu , Chao-Hsing Chen , Tsun-Kai Ko , Chi-Ming Huang , Shih-Wei Yen , Chien-Kai Chung
IPC分类号： H01L21/00 , H01L33/38 , H01L33/20
CPC分类号： H01L33/38 , H01L33/20 , H01L33/382 , H01L2933/0016
摘要： A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.
摘要翻译：公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题从第一和第二电极焊盘。

2. 发明授权

US08823039B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08823039B2
公开(公告)日：2014-09-02
申请号：US13459342
申请日：2012-04-30
申请人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.
摘要翻译：本公开公开了一种发光装置。发光装置包括：具有上表面和下表面的发光叠层; 布置在所述上表面上的垫，包括：第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。第一电极，第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

3. 发明授权

US08487317B2 GaN semiconductor device 有权
公开(公告)号：US08487317B2
公开(公告)日：2013-07-16
申请号：US12382955
申请日：2009-03-27
申请人： Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
发明人： Yi-Chieh Lin , Cheng-Ta Kuo , Yu-Pin Hsu , Chi-Ming Tsai
IPC分类号： H01L33/00 , H01L29/20
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/007
摘要： This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.

4. 发明申请

US20120211794A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120211794A1
公开(公告)日：2012-08-23
申请号：US13459342
申请日：2012-04-30
申请人： Chien-Fu SHEN , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu SHEN , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.
摘要翻译：本公开公开了一种发光装置。发光装置包括：具有上表面和下表面的发光叠层; 布置在所述上表面上的垫，包括：第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。第一电极，第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

5. 发明授权

US08076686B2 Light emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08076686B2
公开(公告)日：2011-12-13
申请号：US12073736
申请日：2008-03-10
申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/46 , H01L2933/0083 , H01L2933/0091
摘要： A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
摘要翻译：公开了一种发光二极管及其制造方法。该制造方法包括以下步骤：在永久性基板上依次形成接合层，几何图案层，反射层，外延结构和第一电极，其中几何图案层具有周期性结构; 以及在所述永久基板的一侧上形成第二电极。

6. 发明申请

US20100258818A1 LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光二极管芯片及其制造方法
公开(公告)号：US20100258818A1
公开(公告)日：2010-10-14
申请号：US12464859
申请日：2009-05-12
申请人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
发明人： Chia-En Lee , Cheng-Ta Kuo , Der-Ling Hsia
IPC分类号： H01L33/00 , H01L21/78
CPC分类号： H01L33/0095 , H01L21/78 , H01L33/20 , H01L33/44
摘要： The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer.
摘要翻译：本发明提供一种LED芯片的制造方法。首先，在生长衬底上形成器件层，其中器件层具有连接到生长衬底的第一表面和第二表面。接下来，在器件层的第二表面上形成多个第一沟槽。然后，在第一沟槽的侧壁上形成保护层。之后，将第二表面与支撑基板接合，然后将器件层与生长衬底分离。此外，在器件层中形成对应于第一沟槽的多个第二沟槽以形成多个LED，其中第二沟槽从第一沟槽的第一表面延伸到底部。此外，在器件层的第一表面上形成多个电极。

7. 发明授权

US08188505B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08188505B2
公开(公告)日：2012-05-29
申请号：US12292593
申请日：2008-11-21
申请人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
发明人： Chien-Fu Shen , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104μm2 and 6.2×104 μm2.
摘要翻译：发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中沟槽，并且在第二半导体层上形成第二导电结构。第一导电结构包括彼此电接触的第一电极和第一焊盘。第二导电结构包括彼此电接触的第二电极和第二焊盘。此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×104μm2和6.2×104μm2之间。

8. 发明授权

US08012777B2 Packaging process of light emitting diode 有权
标题翻译：发光二极管封装工艺
公开(公告)号：US08012777B2
公开(公告)日：2011-09-06
申请号：US12496644
申请日：2009-07-02
申请人： Wen-Sung Chang , Cheng-Ta Kuo
发明人： Wen-Sung Chang , Cheng-Ta Kuo
IPC分类号： H01L21/56
CPC分类号： H01L33/52 , H01L2924/0002 , H01L2933/005 , H01L2924/00
摘要： A packaging process of a light emitting diode (LED) is provided. First, an LED chip is bonded with a carrier to electrically connect to each other. After that, the carrier is heated to raise the temperature thereof. Next, an encapsulant is formed on the heated carrier by a dispensing process to encapsulate the LED chip, wherein the viscosity of the encapsulant before contacting the carrier is lower than that of the encapsulant after contacting the carrier. Thereafter, the encapsulant is cured.
摘要翻译：提供了一种发光二极管（LED）的封装工艺。首先，将LED芯片与载体接合以彼此电连接。之后，载体被加热以升高其温度。接下来，通过分配工艺在加热的载体上形成密封剂以封装LED芯片，其中在与载体接触之前，密封剂在与载体接触之前的粘度低于封装剂的粘度。此后，密封剂固化。

9. 发明授权

US07821026B2 Light emitting diode device and manufacturing method therof 有权
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US07821026B2
公开(公告)日：2010-10-26
申请号：US12230887
申请日：2008-09-08
申请人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
发明人： Kuo-Hui Yu , Yu-Cheng Yang , Cheng-Ta Kuo
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/32
摘要： A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a second type conductivity semiconductor layer, a transparent conductive oxide stack structure, a first electrode, and a second electrode. The first semiconductor layer on the substrate has a first portion and a second portion. The active layer and the second semiconductor layer are subsequently set on the first portion. The transparent conductive oxide stack structure on the second semiconductor layer has at least two resistant interfaces. The first electrode is above the second portion, and the second electrode is above the transparent conductive oxide stack structure.
摘要翻译：提供了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，第一类型导电半导体层，有源层，第二类型导电半导体层，透明导电氧化物堆叠结构，第一电极和第二电极。衬底上的第一半导体层具有第一部分和第二部分。有源层和第二半导体层随后设置在第一部分上。第二半导体层上的透明导电氧化物堆叠结构具有至少两个电阻接口。第一电极在第二部分之上，第二电极在透明导电氧化物堆叠结构之上。

10. 发明申请

US20100261299A1 PACKAGING PROCESS OF LIGHT EMITTING DIODE 有权
标题翻译：发光二极管的包装工艺
公开(公告)号：US20100261299A1
公开(公告)日：2010-10-14
申请号：US12496644
申请日：2009-07-02
申请人： Wen-Sung Chang , Cheng-Ta Kuo
发明人： Wen-Sung Chang , Cheng-Ta Kuo
IPC分类号： H01L21/56 , H01L33/00
CPC分类号： H01L33/52 , H01L2924/0002 , H01L2933/005 , H01L2924/00
摘要： A packaging process of a light emitting diode (LED) is provided. First, an LED chip is bonded with a carrier to electrically connect to each other. After that, the carrier is heated to raise the temperature thereof. Next, an encapsulant is formed on the heated carrier by a dispensing process to encapsulate the LED chip, wherein the viscosity of the encapsulant before contacting the carrier is lower than that of the encapsulant after contacting the carrier. Thereafter, the encapsulant is cured.
摘要翻译：提供了一种发光二极管（LED）的封装工艺。首先，将LED芯片与载体接合以彼此电连接。之后，载体被加热以升高其温度。接下来，通过分配工艺在加热的载体上形成密封剂以封装LED芯片，其中在与载体接触之前，密封剂在与载体接触之前的粘度低于封装剂的粘度。此后，密封剂固化。

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