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    • 2. 发明授权
    • Thin film transistor with metal silicide layer
    • 具有金属硅化物层的薄膜晶体管
    • US08664722B2
    • 2014-03-04
    • US13288999
    • 2011-11-04
    • Takashi ShinguDaisuke OhgaraneYurika Sato
    • Takashi ShinguDaisuke OhgaraneYurika Sato
    • H01L27/12H01L29/786
    • H01L29/66621H01L29/458H01L29/66757
    • In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the metal silicide layer and the semiconductor film are etched to form a recessed portion; and a layer which is not doped with the impurity element and is located at the bottom of the recessed portion of the semiconductor film is thinned to make a channel formation region. Further, a gate electrode is formed in the recessed portion over the thinned non impurity doped layer, with an insulating film interposed therebetween.
    • 在制造半导体器件的方法中,形成在绝缘体上的半导体膜掺杂有杂质元素,其深度小于半导体膜的厚度,从而形成杂质掺杂层; 在杂质掺杂层上形成金属硅化物层; 蚀刻金属硅化物层和半导体膜以形成凹部; 并且不掺杂杂质元素并且位于半导体膜的凹部的底部的层被薄化以形成沟道形成区域。 此外,在稀薄的非杂质掺杂层上的凹部中形成有栅电极,其间插入有绝缘膜。
    • 5. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08048749B2
    • 2011-11-01
    • US12178356
    • 2008-07-23
    • Tomokazu YokoiAtsuo IsobeMotomu KurataTakeshi ShichiDaisuke OhgaraneTakashi Shingu
    • Tomokazu YokoiAtsuo IsobeMotomu KurataTakeshi ShichiDaisuke OhgaraneTakashi Shingu
    • H01L21/336
    • H01L29/66765
    • A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process. An island-like conductive film is formed over a surface of an insulating substrate in a portion corresponding to a channel forming region, and is covered with an insulating film to form a projection portion. After an amorphous semiconductor film is deposited to cover the projection portion, the amorphous semiconductor film is irradiated with laser light so as to be melted and crystallized. Part of the melted semiconductor over the projection portion flows into regions adjacent to both sides of the projection portion, which results in reduction in thickness of the semiconductor film over the projection portion (channel forming region).
    • 一种制造半导体器件的方法,通过该方法可以以简单的方法制造具有改善的S值的底栅极薄膜晶体管和具有比源极区和漏极区更小的厚度的沟道形成区。 在对应于沟道形成区域的部分的绝缘基板的表面上形成岛状导电膜,并且被绝缘膜覆盖以形成突出部。 在沉积非晶半导体膜以覆盖突出部分之后,用激光照射非晶半导体膜以使其熔化并结晶。 突出部分上的熔融半导体的一部分流入与突出部分的两侧相邻的区域,这导致半导体膜在突出部分(沟道形成区域)上的厚度减小。
    • 6. 发明申请
    • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20090029514A1
    • 2009-01-29
    • US12178356
    • 2008-07-23
    • Tomokazu YOKOIAtsuo ISOBEMotomu KURATATakeshi SHICHIDaisuke OHGARANETakashi SHINGU
    • Tomokazu YOKOIAtsuo ISOBEMotomu KURATATakeshi SHICHIDaisuke OHGARANETakashi SHINGU
    • H01L21/336
    • H01L29/66765
    • A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process. An island-like conductive film is formed over a surface of an insulating substrate in a portion corresponding to a channel forming region, and is covered with an insulating film to form a projection portion. After an amorphous semiconductor film is deposited to cover the projection portion, the amorphous semiconductor film is irradiated with laser light so as to be melted and crystallized. Part of the melted semiconductor over the projection portion flows into regions adjacent to both sides of the projection portion, which results in reduction in thickness of the semiconductor film over the projection portion (channel forming region).
    • 一种制造半导体器件的方法,通过该方法可以以简单的方法制造具有改善的S值的底栅极薄膜晶体管和具有比源极区和漏极区更小的厚度的沟道形成区。 在对应于沟道形成区域的部分的绝缘基板的表面上形成岛状导电膜,并且被绝缘膜覆盖以形成突出部。 在沉积非晶半导体膜以覆盖突出部分之后,用激光照射非晶半导体膜以使其熔化并结晶。 突出部分上的熔融半导体的一部分流入与突出部分的两侧相邻的区域,这导致半导体膜在突出部分(沟道形成区域)上的厚度减小。