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1. 发明申请

US20130163342A1 PROGRAM TEMPERATURE DEPENDENT READ 有权
标题翻译：程序温度依赖阅读
公开(公告)号：US20130163342A1
公开(公告)日：2013-06-27
申请号：US13335524
申请日：2011-12-22
申请人： Deepanshu Dutta
发明人： Deepanshu Dutta
IPC分类号： G11C16/26
CPC分类号： G11C16/26 , G11C7/04 , G11C11/5628 , G11C16/3459
摘要： Methods and non-volatile storage systems are provided for using compensation that depends on the temperature at which the memory cells were programmed. Note that the read level compensation may have a component that is not dependent on the memory cells' Tco. That is, the component is not necessarily based on the temperature dependence of the Vth of the memory cells. The compensation may have a component that is dependent on the difference in width of individual Vth distributions of the different states across different temperatures of program verify. This compensation may be used for both verify and read, although a different amount of compensation may be used during read than during verify.
摘要翻译：提供了方法和非易失性存储系统，用于使用取决于存储器单元被编程的温度的补偿。请注意，读取电平补偿可能具有不依赖于存储单元“Tco”的组件。也就是说，组分不一定基于存储器单元的Vth的温度依赖性。补偿可以具有取决于程序验证的不同温度下不同状态的各个Vth分布的宽度差异的分量。该补偿可以用于验证和读取，尽管在读取期间可以使用与验证不同的补偿量。

2. 发明授权

US08248850B2 Data recovery for non-volatile memory based on count of data state-specific fails 有权
标题翻译：基于数据状态特定数据的非易失性存储器的数据恢复失败
公开(公告)号：US08248850B2
公开(公告)日：2012-08-21
申请号：US12695918
申请日：2010-01-28
申请人： Deepanshu Dutta , Jeffrey W. Lutze , Yan Li
发明人： Deepanshu Dutta , Jeffrey W. Lutze , Yan Li
IPC分类号： G11C16/06 , G11C7/10
CPC分类号： G11C11/5628 , G11C16/3418 , G11C29/00 , G11C2211/5621 , G11C2211/5642
摘要： An error detection and data recovery operation for a non-volatile memory system. Even after a programming operation for a set of storage elements is successfully completed, the data of some storage elements may be corrupted. For example, erased state storage element may be disturbed by programming of other storage elements. To allow recovery of data in such situations, associated data latches can be configured to allow the erased state storage elements to be distinguished from other data states once programming is completed. Furthermore, a single read operation can be performed after programming is completed. Logical operations are performed using results from the read operation, and values in the data latches, to identify erased state storage elements which have strayed to another data state. If the number of errors exceeds a threshold, a full recovery operation is initiated in which read operations are performed for the remaining states.
摘要翻译：用于非易失性存储器系统的错误检测和数据恢复操作。即使在一组存储元件的编程操作成功完成之后，一些存储元件的数据也可能被破坏。例如，擦除状态存储元件可能受到其他存储元件的编程的干扰。为了允许在这种情况下恢复数据，相关联的数据锁存器可以被配置为允许擦除状态存储元件在编程完成之后与其他数据状态区分开来。此外，可以在编程完成之后执行单个读取操作。使用读取操作的结果和数据锁存器中的值执行逻辑运算，以识别已经偏移到另一数据状态的擦除状态存储元件。如果错误数量超过阈值，则启动完全恢复操作，在其中执行剩余状态的读取操作。

3. 发明申请

US20120081963A1 MULTI-STEP CHANNEL BOOSTING TO REDUCE CHANNEL TO FLOATING GATE COUPLING IN MEMORY 有权
标题翻译：多通道通道升压以减少通道在存储器中浮动闸门耦合
公开(公告)号：US20120081963A1
公开(公告)日：2012-04-05
申请号：US12894889
申请日：2010-09-30
申请人： Deepanshu Dutta , Jeffrey W. Lutze , Henry Chin
发明人： Deepanshu Dutta , Jeffrey W. Lutze , Henry Chin
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/3418 , G11C7/02 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3427 , G11C16/3454 , G11C2211/5621
摘要： In a programming operation, selected storage elements which reach a lockout condition are subject to reduced channel boosting in a program portion of the next program-verify iteration, to reduce coupling effects on the storage elements which continue to be programmed. In subsequent program-verify iterations, the locked out storage elements are subject to full channel boosting. Or, the boosting can be stepped up over multiple program-verify iterations after lockout. The amount of channel boosting can be set by adjusting the timing of a channel pre-charge operation and by stepping up pass voltages which are applied to unselected word lines. The reduced channel boosting can be implemented for a range of program-verify iterations where the lockout condition is most likely to be first reached, for one or more target data states.
摘要翻译：在编程操作中，达到锁定状态的所选择的存储元件在下一个程序验证迭代的程序部分中经历减少的信道增强，以减少对继续被编程的存储元件的耦合效应。在随后的程序验证迭代中，锁定的存储元件进行全通道升压。或者，在锁定之后，可以通过多次程序验证迭代来加强升压。可以通过调整通道预充电操作的定时和通过加压施加到未选字线的通过电压来设置通道升压量。对于一个或多个目标数据状态，减少的信道增强可以针对最可能首先达到锁定条件的一系列程序验证迭代来实现。

4. 发明授权

US08081514B2 Partial speed and full speed programming for non-volatile memory using floating bit lines 有权
标题翻译：使用浮动位线对非易失性存储器进行部分速度和全速编程
公开(公告)号：US08081514B2
公开(公告)日：2011-12-20
申请号：US12547449
申请日：2009-08-25
申请人： Man Mui , Yingda Dong , Binh Lee , Deepanshu Dutta
发明人： Man Mui , Yingda Dong , Binh Lee , Deepanshu Dutta
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3418 , G11C16/3427
摘要： Partial speed and full speed programming are achieved for a non-volatile memory system. During a program operation, in a first time period, bit lines of storage elements to be inhibited are pre-charged, while bit line of storage elements to be programmed at a partial speed and bit lines of storage elements to be programmed at a full speed are fixed. In a second time period, the bit lines of storage elements to be programmed at the partial speed are driven higher, while the bit lines of storage elements to be inhibited are floated and the bit line of storage elements to be programmed remain fixed. In a third time period, the bit lines of storage elements to be inhibited are driven higher while the bit lines of the storage elements to be programmed at the partial speed or the full speed are floated so that they couple higher.
摘要翻译：非易失性存储器系统实现了部分速度和全速编程。在编程操作期间，在第一时间段中，要禁止的存储元件的位线被预充电，而要以部分速度编程的存储元件的位线和要全速编程的存储元件的位线是固定的在第二时间段中，以部分速度编程的存储元件的位线被驱动得较高，而待禁止的存储元件的位线被浮置，并且待编程的存储元件的位线保持固定。在第三时间段中，待被禁止的存储元件的位线被驱动得较高，而以部分速度或全速编程的存储元件的位线被浮动，使得它们耦合得更高。

5. 发明授权

US07800956B2 Programming algorithm to reduce disturb with minimal extra time penalty 有权
标题翻译：编程算法以最小的额外时间损失来减少干扰
公开(公告)号：US07800956B2
公开(公告)日：2010-09-21
申请号：US12163073
申请日：2008-06-27
申请人： Dana Lee , Deepanshu Dutta , Yingda Dong
发明人： Dana Lee , Deepanshu Dutta , Yingda Dong
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C2211/5621
摘要： Programming time is reduced in a non-volatile memory in a multi-pass programming process. In a first programming pass, high state cells are programmed by a sequence of program pulses to identify fast and slow high state cells, while lower state cells are locked out from programming. Once identified, the fast high state cells are temporarily locked out from programming while the slow high state cells continue being programmed to their final intended state. Further, the program pulses are sharply stepped up to program the slow high state cells. In a second programming pass, the fast high state cells are programmed along with the other, lower state cells, until they all reach their respective intended states. A time savings is realized compared to approaches in which all high state cells are programmed in the first programming pass.
摘要翻译：在多遍编程过程中，非易失性存储器中的编程时间会减少。在第一编程通道中，高状态单元通过一系列编程脉冲进行编程，以识别快速和慢速的高状态单元，而较低状态单元被从编程中锁定。一旦识别，快速高状态单元暂时被禁止编程，而缓慢的高状态单元继续被编程到其最终预期状态。此外，编程脉冲急剧地升高以对慢速高状态单元进行编程。在第二个编程过程中，快速高状态单元与其他较低状态单元一起编程，直到它们都达到各自的预期状态。与在第一编程通路中编程所有高状态单元的方法相比，实现了时间节省。

6. 发明授权

US08611148B2 Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory 有权
公开(公告)号：US08611148B2
公开(公告)日：2013-12-17
申请号：US13428305
申请日：2012-03-23
申请人： Deepanshu Dutta , Jeffrey W Lutze , Grishma Shah
发明人： Deepanshu Dutta , Jeffrey W Lutze , Grishma Shah
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3427
摘要： In a programming operation, selected storage elements on a selected word line are programmed while unselected storage elements on the selected word line are inhibited from programming by channel boosting. To provide a sufficient but not excessive level of boosting, the amount of boosting can be set based on a data state of the unselected storage element. A greater amount of boosting can be provided for a lower data state which represents a lower threshold voltage and hence is more vulnerable to program disturb. A common boosting scheme can be used for groups of multiple data states. The amount of boosting can be set by adjusting the timing and magnitude of voltages used for a channel pre-charge operation and for pass voltages which are applied to word lines. In one approach, stepped pass voltages on unselected word lines can be used to adjust boosting for channels with selected data states.

7. 发明申请

US20130301351A1 Channel Boosting Using Secondary Neighbor Channel Coupling In Non-Volatile Memory 有权
标题翻译：在非易失性存储器中使用次邻居信道耦合的信道增强
公开(公告)号：US20130301351A1
公开(公告)日：2013-11-14
申请号：US13467289
申请日：2012-05-09
申请人： Deepanshu Dutta , Shinji Sato , Fumiko Yano
发明人： Deepanshu Dutta , Shinji Sato , Fumiko Yano
IPC分类号： G11C16/04 , G11C16/12
CPC分类号： G11C16/3418 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3427
摘要： In a non-volatile storage system, a programming portion of a program-verify iteration has multiple programming pulses, and storage elements along a word line are selected for programming according to a pattern. Unselected storage elements are grouped to benefit from channel-to-channel capacitive coupling from both primary and secondary neighbor storage elements. The coupling is helpful to boost channel regions of the unselected storage elements to a higher channel potential to prevent program disturb. Each selected storage element has a different relative position within its set. For example, during a first programming pulse, first, second and third storage elements are selected in first, second and third sets, respectively. During a second programming pulse, second, third and first storage elements are selected in the first, second and third sets, respectively. During a third programming pulse, third, first and second storage elements are selected in the first, second and third sets, respectively.
摘要翻译：在非易失性存储系统中，程序验证迭代的编程部分具有多个编程脉冲，并且根据模式选择沿字线的存储元件进行编程。未选择的存储元件被分组以从主要和次要邻居存储元件的通道到通道的电容耦合受益。耦合有助于将未选择的存储元件的通道区域升高到更高的通道电位，以防止程序干扰。每个选定的存储元件在其集合内具有不同的相对位置。例如，在第一编程脉冲期间，分别在第一，第二和第三组中选择第一，第二和第三存储元件。在第二编程脉冲期间，分别在第一，第二和第三组中选择第二，第三和第一存储元件。在第三编程脉冲期间，分别在第一，第二和第三组中选择第三，第一和第二存储元件。

8. 发明申请

US20130250690A1 SELECTED WORD LINE DEPENDENT SELECT GATE VOLTAGE DURING PROGRAM 有权
标题翻译：在程序期间选择的字线相关选择门电压
公开(公告)号：US20130250690A1
公开(公告)日：2013-09-26
申请号：US13430502
申请日：2012-03-26
申请人： Chun-Hung Lai , Deepanshu Dutta , Shinji Sato , Gerrit Jan Hemink
发明人： Chun-Hung Lai , Deepanshu Dutta , Shinji Sato , Gerrit Jan Hemink
IPC分类号： G11C16/10
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/10
摘要： Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.
摘要翻译：公开了用于操作非易失性存储器的方法和装置。一个或多个编程条件取决于选择用于编程的字线的位置，这可以减少或消除程序干扰。施加到NAND串的选择晶体管的栅极的电压可以取决于所选字线的位置。这可以是源极侧或漏极侧选择晶体管。这可能会阻止或减少由于DIBL而导致的程序干扰。这也可以防止或减少由于GIDL可能导致的程序干扰。当编程至少一些字线时，负偏压可以施加到源极侧选择晶体管的栅极。在一个实施例中，当编程逐渐增加的字线时，逐渐降低的电压用于漏极侧选择晶体管的栅极。

9. 发明授权

US08406053B1 On chip dynamic read for non-volatile storage 有权
标题翻译：用于非易失性存储的片上动态读取
公开(公告)号：US08406053B1
公开(公告)日：2013-03-26
申请号：US13239194
申请日：2011-09-21
申请人： Deepanshu Dutta , Dana Lee , Jeffrey Lutze
发明人： Deepanshu Dutta , Dana Lee , Jeffrey Lutze
IPC分类号： G11C11/34 , G11C16/04 , G11C16/06
CPC分类号： G11C16/04 , G11C11/5642 , G11C16/26 , G11C16/3418 , G11C16/3495 , G11C2211/5644
摘要： Dynamically determining read levels on chip (e.g., memory die) is disclosed herein. One method comprises reading a group of non-volatile storage elements on a memory die at a first set of read levels. Results of the two most recent of the read levels are stored on the memory die. A count of how many of the non-volatile storage elements in the group showed a different result between the reads for the two most recent read levels is determined. The determining is performed on the memory die using the results stored on the memory die. A dynamic read level is determined for distinguishing between a first pair of adjacent data states of the plurality of data states based on the read level when the count reaches a pre-determined criterion. Note that the read level may be dynamically determined on the memory die.
摘要翻译：本文公开了动态地确定芯片上的读取电平（例如，存储器管芯）。一种方法包括以第一组读取级别在存储器管芯上读取一组非易失性存储元件。两个最新的读取电平的结果存储在存储器管芯上。确定组中有多少非易失性存储元件在两个最新读取级别的读取之间显示不同的结果。使用存储在存储器管芯上的结果在存储器管芯上进行确定。当计数达到预定标准时，基于读取级别来确定动态读取级别以区分多个数据状态的第一对相邻数据状态。注意，读取电平可以在存储器管芯上动态地确定。

10. 发明申请

US20130070531A1 SUBSTRATE BIAS DURING PROGRAM OF NON-VOLATILE STORAGE 有权
标题翻译：非挥发性储存程序期间的基板偏差
公开(公告)号：US20130070531A1
公开(公告)日：2013-03-21
申请号：US13234539
申请日：2011-09-16
申请人： Dengtao Zhao , Guirong Liang , Deepanshu Dutta
发明人： Dengtao Zhao , Guirong Liang , Deepanshu Dutta
IPC分类号： G11C16/10
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/3427 , G11C2211/5644 , G11C2211/565
摘要： A programming technique which reduces program disturb in a non-volatile storage system is disclosed. A positive voltage may be applied to a substrate (e.g., p-well) during programming. Biasing the substrate may improve boosting of channels of unselected NAND strings, which may reduce program disturb. The substrate may be charged up during the programming operation, and discharged after programming. Therefore, for operations such as verify and read, the substrate may be grounded. In one embodiment, the substrate is charged just prior to applying a program pulse, then discharged prior to a program verify operation. In one embodiment, the substrate is charged while unselected word lines are ramped up to a pass voltage. The substrate bias may depend on program voltage, temperature, and/or hot count.
摘要翻译：公开了一种降低非易失性存储系统中的程序干扰的编程技术。在编程期间可以将正电压施加到衬底（例如，p阱）。偏置衬底可以提高未选择的NAND串的通道的升高，这可能减少程序干扰。在编程操作期间可以对衬底进行充电，并在编程之后放电。因此，对于诸如验证和读取的操作，衬底可以接地。在一个实施例中，在施加编程脉冲之前对衬底进行充电，然后在程序验证操作之前被放电。在一个实施例中，在未选择的字线斜坡上升到通过电压的同时对衬底进行充电。衬底偏置可取决于程序电压，温度和/或热计数。

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