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    • 6. 发明授权
    • Vertical outgassing channels
    • 垂直除气通道
    • US08129257B2
    • 2012-03-06
    • US12353798
    • 2009-01-14
    • Di Liang
    • Di Liang
    • H01L21/30
    • H01L29/06H01L21/2007H01L21/76251
    • InP epitaxial material is directly bonded onto a Silicon-On-Insulator (SOI) wafer having Vertical Outgassing Channels (VOCs) between the bonding surface and the insulator (buried oxide, or BOX) layer. H2O and other molecules near the bonding surface migrate to the closest VOC and are quenched in the buried oxide (BOX) layer quickly by combining with bridging oxygen ions and forming pairs of stable nonbridging hydroxyl groups (Si—OH). Various sizes and spacings of channels are envisioned for various devices.
    • InP外延材料直接接合到在接合表面和绝缘体(掩埋氧化物或BOX)层之间具有垂直除气通道(VOC)的绝缘体上硅绝缘体(SOI)晶片上。 H 2 O和接合表面附近的其他分子迁移到最接近的VOC,并通过与桥连氧离子和形成一对稳定的非桥连羟基(Si-OH)而快速地在掩埋氧化物(BOX)层中淬火。 各种设备可以设想各种尺寸和间距的通道。