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1. 发明授权

US10043992B2 Photodiode 有权
公开(公告)号：US10043992B2
公开(公告)日：2018-08-07
申请号：US13354980
申请日：2012-01-20
申请人： Kyung Bae Park , Kyu Sik Kim , Yong Wan Jin , Kwang Hee Lee , Dong-Seok Leem , Seon-Jeong Lim
发明人： Kyung Bae Park , Kyu Sik Kim , Yong Wan Jin , Kwang Hee Lee , Dong-Seok Leem , Seon-Jeong Lim
IPC分类号： H01L51/46 , H01L51/42
摘要： A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

2. 发明授权

US07205576B2 Light emitting device and method of manufacturing the same 有权
公开(公告)号：US07205576B2
公开(公告)日：2007-04-17
申请号：US10930915
申请日：2004-09-01
申请人： June-o Song , Dong-seok Leem , Tae-yeon Seong
发明人： June-o Song , Dong-seok Leem , Tae-yeon Seong
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2933/0016
摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

3. 发明授权

US07180094B2 Nitride-based light emitting device and method of manufacturing the same 有权
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US07180094B2
公开(公告)日：2007-02-20
申请号：US10957704
申请日：2004-10-05
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L29/04
CPC分类号： H01L33/42 , H01L33/32 , H01L33/405 , H01L2933/0016
摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
摘要翻译：提供一种氮化物系发光器件及其制造方法。氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

4. 发明授权

US09287509B2 Quinacridone derivative, and photoactive layer and photoelectric conversion device including same 有权
标题翻译：喹吖啶酮衍生物，光活性层和包含其的光电转换装置
公开(公告)号：US09287509B2
公开(公告)日：2016-03-15
申请号：US13531724
申请日：2012-06-25
申请人： Seon-Jeong Lim , Kyu Sik Kim , Kwang Hee Lee , Dong-Seok Leem , Kyung Bae Park
发明人： Seon-Jeong Lim , Kyu Sik Kim , Kwang Hee Lee , Dong-Seok Leem , Kyung Bae Park
IPC分类号： H01L51/54 , C09K11/06 , C07D471/04 , H01L51/00 , C07D471/06 , C07D487/06 , H01L51/42
CPC分类号： H01L51/0062 , C07D471/06 , C07D487/06 , H01L51/424 , Y02E10/549
摘要： A quinacridone derivative may be represented by Chemical Formula 1, and a photoactive layer may include the same. A photoelectric conversion device may include a first electrode, a second electrode spaced apart from and configured to face the first electrode, and the photoactive layer including the quinacridone derivative between the first electrode and the second electrode.
摘要翻译：喹吖啶酮衍生物可以由化学式1表示，光活性层可以包括它们。光电转换装置可以包括第一电极，与第一电极间隔开并配置为面对第一电极的第二电极，以及在第一电极和第二电极之间包含喹吖啶酮衍生物的光敏层。

5. 发明申请

US20130105768A1 PHOTODIODE 有权
标题翻译：光电
公开(公告)号：US20130105768A1
公开(公告)日：2013-05-02
申请号：US13461250
申请日：2012-05-01
申请人： Dong-Seok LEEM , Kyu Sik KIM , Kyung Bae PARK , Kwang Hee LEE , Seon-Jeong LIM
发明人： Dong-Seok LEEM , Kyu Sik KIM , Kyung Bae PARK , Kwang Hee LEE , Seon-Jeong LIM
IPC分类号： H01L51/46
CPC分类号： H01L51/4246 , H01L51/4273 , Y02E10/549
摘要： A photodiode may include an anode, a cathode, a photoelectric conversion layer between the anode and the cathode, and a buffer layer between the photoelectric conversion layer and the anode. The buffer layer may have a dual-layered structure including an organic layer and an inorganic layer.
摘要翻译：光电二极管可以包括阳极，阴极，阳极和阴极之间的光电转换层，以及光电转换层和阳极之间的缓冲层。缓冲层可以具有包括有机层和无机层的双层结构。

6. 发明授权

US08405109B2 Low resistance electrode and compound semiconductor light emitting device including the same 失效
标题翻译：低电阻电极和包括其的化合物半导体发光器件
公开(公告)号：US08405109B2
公开(公告)日：2013-03-26
申请号：US13095487
申请日：2011-04-27
申请人： Joon Seop Kwak , Tae Yeon Seong , Jae Hee Cho , June-o Song , Dong Seok Leem , Hyun Soo Kim
发明人： Joon Seop Kwak , Tae Yeon Seong , Jae Hee Cho , June-o Song , Dong Seok Leem , Hyun Soo Kim
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L23/40 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/44
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

7. 发明授权

US08227283B2 Top-emitting N-based light emitting device and method of manufacturing the same 有权
标题翻译：顶级发射型N型发光器件及其制造方法
公开(公告)号：US08227283B2
公开(公告)日：2012-07-24
申请号：US11812305
申请日：2007-06-18
申请人： Tae-yeon Seong , Tak-hee Lee , Dong-seok Leem
发明人： Tae-yeon Seong , Tak-hee Lee , Dong-seok Leem
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/42
摘要： Provided is a top-emitting N-based light emitting device and a method of manufacturing the same. The N-based light emitting device may include an n-type clad layer, an active layer, a p-type clad layer, and a transparent conductive thin film which may be sequentially stacked on a substrate. The transparent conductive thin film may have a surface nano-scale patterned by wet-etching and then annealing without using a mask for improving the light extraction rate. A light emitting device having a higher brightness may be prepared by increasing or maximizing the light extraction rate by employing the transparent conductive thin film having the surface patterned by wet-etching and then annealing.
摘要翻译：提供了一种顶发射型N型发光器件及其制造方法。该N系发光元件可以包括可依次层叠在基板上的n型覆盖层，有源层，p型覆盖层和透明导电性薄膜。透明导电薄膜可以具有通过湿蚀刻然后退火而不使用掩模来提高光提取速率的图案化的表面纳米级。具有较高亮度的发光器件可以通过使用具有通过湿蚀刻图形化然后退火的表面的透明导电薄膜来增加或最大化光提取率来制备。

8. 发明授权

US07687908B2 Thin film electrode for high-quality GaN optical devices 有权
标题翻译：用于高品质GaN光学器件的薄膜电极
公开(公告)号：US07687908B2
公开(公告)日：2010-03-30
申请号：US10886686
申请日：2004-07-09
申请人： Dong-seok Leem , June-o Song , Sang-ho Kim , Tae-yeon Seong
发明人： Dong-seok Leem , June-o Song , Sang-ho Kim , Tae-yeon Seong
IPC分类号： H01L23/48
CPC分类号： H01L33/42 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.
摘要翻译：用于p型GaN半导体的欧姆接触的薄膜电极包括顺序堆叠在p型GaN层上的第一和第二电极层。第一电极层可以包括Ni基合金，Cu基合金，Co基合金或能够形成p型热电氧化物的固溶体，或者可以包括至少掺杂有氧化镍的Ni氧化物一个选自Al，Ga和In。第二电极层可以包括选自Au，Pd，Pt，Ru，Re，Sc，Mg，Zn，V，Hf，Ta，Rh，Ir，W，Ti，Ag，Cr，Mo中的至少一种，Nb，Ca，Na，Sb，Li，In，Sn，Al，Ni，Cu和Co。此外，提供了制造薄膜电极的方法。

9. 发明授权

US07541207B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07541207B2
公开(公告)日：2009-06-02
申请号：US11714843
申请日：2007-03-07
申请人： June-o Song , Dong-seok Leem , Tae-yeon Seong
发明人： June-o Song , Dong-seok Leem , Tae-yeon Seong
IPC分类号： H01L21/285 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2933/0016
摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.
摘要翻译：提供一种发光器件及其制造方法。发光器件具有依次层叠基板，n型覆盖层，发光层，p型覆盖层，欧姆接触层和反射层的结构。通过向氧化铟中加入附加元素来形成欧姆接触层。根据发光器件及其制造方法，提高了与p型覆盖层的欧姆接触的特性，从而提高了包装FCLEDS期间引线接合的效率和产率。此外，由于低的非接触电阻和优异的电流和电压特性，可以提高发光器件的发光效率和寿命。

10. 发明授权

US07358541B2 Flip-chip light emitting diode and method of manufacturing the same 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US07358541B2
公开(公告)日：2008-04-15
申请号：US11002797
申请日：2004-12-03
申请人： Tae-yeon Seong , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , June-o Song , Dong-seok Leem
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0095
摘要： Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The reflective layer is formed of the alloy of silver to which a solute element is added. According to the provided FCLED and the method of manufacturing the same, a thermal stability is improved to improve an ohmic contact characteristic to a p-type cladding layer, thus a wire bonding efficiency and a yield are improved when packaging the provided FCLED. In addition, the light emitting efficiency and the lifespan of the provided FCLED are improved due to a low specific-contact resistance and an excellent current-voltage characteristic.
摘要翻译：提供了一种倒装芯片发光二极管（FCLED）及其制造方法。所提供的FCLED通过在衬底上依次沉积n型包覆层，有源层，p型包覆层和反射层而形成。反射层由添加溶质元素的银合金形成。根据提供的FCLED及其制造方法，改善了热稳定性以提高p型包覆层的欧姆接触特性，从而在包装所提供的FCLED时提高了引线接合效率和收率。此外，由于具有低的比接触电阻和优异的电流 - 电压特性，提供的FCLED的发光效率和寿命得到改善。

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